Structural,optical and electrical properties of undoped and Si-doped AlxGa1−xN thin films on Si (1 1 1) substrate grown by PA-MBE

We have studied the structural properties of undoped and Si-doped Al_xGa_1?xN/GaN/AlN on Si (1 1 1) substrate prepared by plasma-assisted molecular beam epitaxy (PA-MBE) using high-resolution X-ray diffraction (HR-XRD) and atomic force microscopy (AFM). In comparison with undoped AlGaN, the roughness and dislocation density on the surface of the AlGaN layer decrease with Si doping. Full width half maximum (FWHM) of the undoped and Si-doped samples were equal to 0.69° and 0.52°, respectively. This indicates that the Si doping improves the crystalline quality of the Al_xGa_1?xN layer compared with the undoped one. Raman scattering measurement reveals that the optical phonon modes of A₁(LO) and E₂(H) of the AlGaN show a one-mode and two-modes behavior, respectively. The Fourier-transform infrared reflectance (FTIR) investigation confirms the one-mode (two-mode) behavior of the LO (TO) phonon in our samples. This is in good agreement with Raman measurement. Finally, the barrier height (Φ_B) of undoped and Si-doped Al_xGa_1?xN samples was found to be 0.86 and 0.74 eV, respectively.     

Optical investigation of vacuum evaporated Se80−xTe20Sbx (x = 0, 6, 12) amorphous thin films

Amorphous thin films of Se_80−xTe₂₀Sb_x (x = 0, 6, 12) chalcogenide glasses has been deposited onto pre-cleaned glass substrate using thermal evaporation technique under a vacuum of 10⁻⁵ Torr. The absorption and transmission spectra of these thin films have been recorded using UV spectrophotometer in the spectral range 400–2500 nm at room temperature. Swanepoel envelope method has been employed to obtain film thickness and optical constants such as refractive index, extinction coefficient and dielectric constant. The optical band gap of the samples has been calculated using Tauc relation. The study reveals that optical band gap decreases on increase in Sb content. This is due to decrease in average single bond energy calculated using chemical bond approach. The values of urbach energy has also been computed to support the above observation. Variation of refractive index has also been studies in terms of wavelength and energy using WDD model and values of single oscillator energy and dispersion energy has been obtained.     

Impedance study of SrTi1−xFexO3−δ (x = 0.05 to 0.80) mixed ionic-electronic conducting model cathode

SrTi_1?xFe_xO_3?δ (STF) model cathodes, with compositions of x = 0.05 to 0.80 were deposited onto single crystal yttria stabilized zirconia by pulsed layer deposition as dense films with well defined area and thickness and studied by electrochemical impedance spectroscopy as a function of electrode geometry, temperature and pO₂. The STF cathode was observed to exhibit typical mixed ionic-electronic behavior with the electrode reaction occurring over the full electrode surface area rather than being limited to the triple phase boundary. The electrode impedance was observed to be independent of electrode thickness and to the introduction of CGO interlayers and inversely proportional to the square of the electrode diameter, pointing to surface exchange limited kinetics. Values for the surface exchange coefficient, k, were calculated and found to be comparable in magnitude to those exhibited by other popular mixed ionic-electronic conductors such as (La,Sr)(Co,Fe)O₃, thereby, confirming the suitability of STF as a model mixed conducting cathode material. The surface exchange coefficient, k, was also found to be insensitive to orders of magnitude change in both bulk electronic and ionic conductivities.     

H adsorption at Ag/Si interfaces in epitaxially grown Ag(1 1 1) films on Si(1 1 1)7 × 7 substrates

The interaction of atomic H with Ag(1 1 1)/Si(1 1 1)7 × 7 surfaces was studied by thermal desorption (TD) spectroscopy and scanning tunneling microscopy (STM) at room temperature. TD spectroscopy revealed an intense peak from mono H–Si bonds, even though the Si surface was covered by the Ag atoms. This peak was not observed from Ag-coated SiO₂/Si substrates. STM observation showed no clear change of the Ag surface morphology resulting from H exposure. All these results indicate that the atomic H adsorbs at neither the Ag surfaces nor Ag bulk sites, but at the Ag/Si interface by diffusing through the Ag film.     

Structural and optical properties of a catalyst-free GaAs/AlGaAs core–shell nano/microwire grown on (1 1 1)Si substrate

Heterostructure in the catalyst-free GaAs nanowire grown on the Si substrate was studied for the application of optical devices in the next generation. We fabricated AlGaAs/GaAs/AlGaAs quantum well (QW) structure on the side facet of the catalyst-free GaAs nanowire grown by molecular beam epitaxy (MBE). The cathode luminescence (CL) measurement showed that the uniform GaAs quantum well was formed between AlGaAs shell layers. On the basis of this structure, we also grew the thick AlGaAs shell layers (∼700 nm) on GaAs nanowires, and observed whispering gallery mode (WGM) resonant in the thick AlGaAs hexagonal structure.     

Raman scattering study of IrxRu1−xO2 mixed metal oxide nanowires (0 ≤ x ≤ 1)

Recent interests in mixed metal oxide nanostructured materials especially Ir_xRu_1−xO₂ compounds have been mainly driven by the technological application as electrocatalyst and electrode materials. We present room temperature Raman scattering results of single crystalline Ir_xRu_1−xO₂ (0 ≤ x ≤ 1) nanowires grown by atmospheric pressure chemical vapor deposition. We observed that the E_g, the A_1g, and the B_2g phonon modes of a single Ir_xRu_1−xO₂ nanowire are blue-shifted linearly with respect to the Ir contents from which we could get stoichiometry information. We also observed that the asymmetric lineshape and the broadening of the full width at half maximum of the E_g mode that involves the out-of-plane oxygen vibration. The unusual asymmetric broadening of the E_g phonon can be explained by the activation of the non-zone-center phonons due to substitutional disorder present in the system. We also found that there is a mixed mode of the A_1g and the B_2g phonons due to the substitutional disorder, in the range of 630–750 cm⁻¹.     

Structural and electrochemical properties of LiNi0.5Mn0.5 − xAlxO2 (x = 0, 0.02, 0.05, 0.08, and 0.1) cathode materials for lithium-ion batteries

Layered LiNi_0.5Mn_0.5 ? xAl_xO₂ (x = 0, 0.02, 0.05, 0.08, and 0.1) series cathode materials for lithium-ion batteries were synthesized by a combination technique of co-precipitation and solid-state reaction, and the structural, morphological, and electrochemical properties were examined by XRD, FT-IR, XPS, SEM, CV, EIS, and charge–discharge tests. It is proven that the aliovalent substitution of Al for Mn promoted the formation of LiNi_0.5Mn_0.5 ? xAl_xO₂ structures and induced an increase in the average oxidation number of Ni, thereby leading to the shrinkage of the lattice volume. Among the LiNi_0.5Mn_0.5 ? xAl_xO₂ materials, the material with x = 0.05 shows the best cyclability and rate ability, with discharge capacities of 219, 169, 155, and 129 mAh g^? 1 at 10, 100, 200, and 400 mA g^? 1 current density respectively. Cycled under 40 mA g^? 1 in 2.8–4.6 V, LiNi_{0. 5}Mn_0.45Al_0.05O₂ shows the highest discharge capacity of about 199 mAh g^? 1 for the first cycle, and 179 mAh g^? 1 after 40 cycles, with a capacity retention of 90%. EIS analyses of the electrode materials at pristine state and state after first charge to 4.6 V indicate that the observed higher current rate capability of LiNi_{0. 5}Mn_0.45Al_0.05O₂ can be understood due to the better charge transfer kinetics.     

Strained c(4 × 2) CoO(1 0 0)-like monolayer on Pd(1 0 0): Experiment and theory

We report on an interface-stabilized strained c(4 × 2) phase formed by cobalt oxide on Pd(1 0 0). The structural details and electronic properties of this oxide monolayer are elucidated by combination of scanning tunneling microscopy data, high resolution electron energy loss spectroscopy measurements and density functional theory. The c(4 × 2) periodicity is shown to arise from a rhombic array of Co vacancies, which form in a pseudomorphic CoO(1 0 0) monolayer to partially compensate for the compressive strain associated with the large lattice mismatch (～9.5%) between cobalt monoxide and the substrate. Deviation from the perfect 1:1 stoichiometry thus appears to offer a common and stable mechanism for strain release in Pd(1 0 0) supported monolayers of transition metal rocksalt monoxides of the first transition series, as very similar metal-deficient c(4 × 2) structures have been previously found for nickel and manganese oxides on the same substrate.     

Theoretical investigation of electronic structure and optical response in relation to the transport properties of Ga1−xInxN (x = 0, 0.25, 0.50, 0.75)

The state-of-the-art all-electron FLPAW method and the BoltzTrap software package based on semi-classical theory were adopted to explore the electronic structure and the optical and thermoelectric properties of Ga_1−xIn_xN. Ga_1−xIn_xN is predicted to be a direct band gap material for all values of x. Moreover, the band gap varies between 2.99 eV and 1.95 eV as x changes. Optical parameters such as the dielectric constant, absorption coefficient, reflectivity and refractive index are calculated and discussed in detail. The doping of In plays an important role in the modulation of the optical constants. The static dielectric constant ɛ(0) of Ga_1−xIn_xN was calculated as 3.95, 3.99, 3.99 and 4.03 at x = 0.00, 0.25, 0.50 and 0.75, respectively. The static refractive index is 2.0 for pure Ga_1−xIn_xN at x = 0.00. The thermal properties varied greatly as x fluctuated. The ternary alloy has large values for the Seebeck coefficient and figure of merit at high temperatures and is thus suitable for thermoelectric applications. Pure Ga_1−xIn_xN at x = 0 exhibited ZT = 0.80 at room temperature, and at higher temperatures, the thermal conductivity decreased with increased In doping.     

Defect chemistry and oxygen transport of (La0.6Sr0.4 − xMx)0.99Co0.2Fe0.8O3 − δ, M = Ca (x = 0.05, 0.1), Ba (x = 0.1, 0.2), Sr: Part II: Oxygen transport

This paper is the second part of a two part series, where the effects of varying the A-site dopant on the defect chemistry and transport properties of the materials (La_0.6Sr_0.4 ? xM_x)_0.99Co_0.2Fe_0.8O_3 ? δ, M = Sr, Ca (x = 0.05, 0.1), Ba (x = 0.1, 0.2) (LSMFC) have been investigated. In part I, the findings on the defect chemistry were reported, while the oxygen transport properties are reported here in part II. In the investigated material series, the amount of divalent dopant has been kept constant, while Sr ions have been substituted with Ca ions (smaller ionic radius) or Ba ions (larger ionic radius). The size difference induces different strains into the crystal structure in each composition. The possibility of simple relationships between various crystal strain parameters and the transport properties were analyzed. Oxygen pump controlled permeation experiments and a surface sensitive electrolyte probe were used to extract the permeability and surface resistance, r_s. The highest permeability was found for (La_0.6Sr_0.3Ca_0.1)_0.99Co_0.2Fe_0.8O_3 ? δ. The apparent activation energy of the permeability was 78 kJ/mol. The inverse surface resistance, r_s^? 1, also had an activated behavior with an activation energy close to 180 kJ/mol for most of the materials. A reversible transition to an abnormally low r_s was found in (La_0.6Sr_0.3Ca_0.1)_0.99Co_0.2Fe_0.8O_3 ? δ at T > 1223 K.     

Effect of Fe doping on the room temperature ferromagnetism in chemically synthesized (In1−xFex)2O3 (0 ⩽ x ⩽ 0.07) magnetic semiconductors

Observation of room temperature ferromagnetism in Fe doped In₂O₃ samples (In_1−xFe_x)₂O₃ (0 ⩽ x ⩽ 0.07) prepared by co-precipitation technique is reported. Lattice parameter obtained from powder X software shows distinct shrinkage of the lattice constant indicating an actual incorporation of Fe ions into the In₂O₃ lattice. X-ray diffraction data measurements show that the entire sample exhibits single phase polycrystalline behavior. SEM micrographs showed the prepared powder was in the range 25–36 nm. SEM EDS mapping showed the presence of Fe and In ions in the Fe doped In₂O₃ sample. The highest remanence magnetization moment (6.624 × 10⁻⁴ emu/g) is reached in the sample with x = 0.03.     

Pressure and compositional dependence of electric conductivity in the (Mg1 − xFex)1 − δO (x = 0.01–0.40) solid-solution

(Mg_1 ? xFe_x)_1 ? δO (x = 0.01–0.43) single crystals (~ 8 mm in diameter) were made by a melt-growth method. Electrical conductivity measurements were carried out as functions of temperature and frequency by a complex impedance method under pressure (~ 43 GPa and ~ 673 K and at 0.1 MPa and ~ 1400 K). Our experimental results show a change in charge transport mechanism in the (Mg_1 ? xFe_x)_1 ? δO solid solution at high temperature. The temperature of inflection point of the slope in Arrhenius plots depend greatly on both composition and extrinsic factors of crystals. The low-temperature conduction mechanism in (Mg_1 ? xFe_x)_1 ? δO solid solution is small polaron. Pressure effect of the electric conductivity was observed and the conductivity increased to 0.5 at log scale of S/m with increasing pressure up to 43.4 GPa. The activation energy was decreased linearly with increasing pressure. Chemical composition and homogeneity of specimen rather than pressure greatly influence the electric conductivity. The activation energy of 2.37(4) eV for the (Mg_0.99Fe_0.01)_1 ? δO solid solution might correspond to a migration enthalpy of O ions through thermally formed defects. It is proposed that a possible dominant electrical conduction mechanism in ferropericlase under the lower mantle conditions, at least in the higher temperature region, is super ionic conduction.     

Annealing effects on the crystal structure and physical properties of FeSe1−xTex (0.6 ≦ x ≦ 1) single crystals

Annealing effects of FeSe_1?xTe_x (0.6 ≦ x ≦ 1) single crystals have been investigated from measurements of the powder X-ray diffraction and specific heat. Through the annealing, several peaks of powder X-ray diffraction have become sharp and a clean jump of the specific-heat at the superconducting (SC) transition temperature, T_c, has been observed for x = 0.6–0.9, indicating bulk superconductivity. For annealed single-crystals of x = 0.6–0.8, the SC condensation energy, U₀, and the SC gap, Δ₀, at 0 K have been estimated as ～1.8 J/mol and 2.3–2.5 meV, respectively. The value of 2Δ₀/k_BT_c is 3.9–4.5, indicating a little strong-coupling superconductivity. Both the electronic specific-heat coefficient in the normal state, γ_n, and the residual electronic specific-heat coefficient in the SC state, γ₀, have been found to show significant x dependence. The values of γ_n are much larger than those estimated from the band calculation.     

Growth and scintillation properties of (Lu1 − x Tmx)2SiO5 [x = 0.001, 0.01, 0.1, 1]

(Lu_1 − xTm_x)₂SiO₅ (x = 0.001, 0.01, 0.1, 1) single crystalline scintillators were grown by the μ-PD method. In transmittance measurement, absorption bands due to Tm³⁺ 4f–4f transitions were observed at 260, 292, 356, 463, 680 and 790 nm and they could be ascribed to the transition from the ³H₆ ground state to its excited states, ¹I₆, ³P₆,¹D₂, ¹G₄, ³F₃ and ³H₄, respectively. Strong emission peak due to ¹D₂ → ³F₄ transition of Tm³⁺ was shown at 453 nm under X-ray irradiation. Photoluminescence decay time constant caused by this transition were evaluated to be 11.9 μs. Tm 1% doped one exhibited the highest light yield of 3530 ± 200 photons/MeV when excited by ¹³⁷Cs gamma-ray exposure.     

Preparation,surface state and band structure studies of SrTi(1 − x)Fe(x)O(3 − δ) (x = 0–1) perovskite-type nano structure by X-ray and ultraviolet photoelectron spectroscopy

In this report, SrTi_(1 ? x)Fe_(x)O_(3 ? δ) photocatalyst powder was synthesized by a high temperature solid state reaction method. The morphology, crystalline structures of obtained samples, was characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and transmission electron microscopy (TEM), respectively. The electronic properties and local structure of the perovskite STF_x (0 ≤ x ≤ 1) systems have been probed by extended X-ray absorption fine structure (EXAFS) spectroscopy. The effects of iron doping level x (x = 0–1) on the crystal structure and chemical state of the STF_x have been investigated by X-ray photoelectron spectroscopy and the valence band edges for electronic band gaps were obtained for STF_x by ultraviolet photoelectron spectroscopy (UPS). A single cubic perovskite phase of STF_x oxide was successfully obtained at 1200 °C for 24 h by the solid state reaction method. The XPS results showed that the iron present in the STF_x perovskite structure is composed of a mixture of Fe³⁺ and Fe⁴⁺ (SrTi_(1 ? x)[Fe³⁺, Fe⁴⁺]_(x)O_(3 ? δ)). When the content x of iron doping was increased, the amount of Fe³⁺ and Fe⁴⁺ increased significantly and the oxygen lattice decreased on the surface of STF_x oxide. The UPS data has confirmed that with more substitution of iron, the position of the valence band decreased.     

The effect of InxGa1−xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1−xN/GaN heterostructures (0.05 ≤ x ≤ 0.14)

Al_0.31Ga_0.69N/AlN/GaN/In_xGa_1?xN/GaN heterostructures grown with the metal-organic chemical vapor deposition (MOCVD) technique with different In_xGa_1?xN back-barriers with In mole fractions of 0.05 ≤ x ≤ 0.14 were investigated by using XRD measurements. Screw, edge, and total dislocations, In mole fraction of back-barriers, Al mole fraction, and the thicknesses of front-barriers and lattice parameters were calculated. Mixed state dislocations with both edge and screw type dislocations were observed. The effects of the In mole fraction difference in the back-barrier and the effect of the thickness of front-barrier on crystal quality are discussed. With the increasing In mole fraction, an increasing dislocation trend is observed that may be due to the growth temperature difference between ultrathin In_xGa_1?xN back-barrier and the surrounding layers.     

Atomic and nanostructures of monolayer c(2 × 2)NiN on Cu(0 0 1)

Structures of monolayer nickel nitride (NiN) on Cu(0 0 1) surface are studied by X-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED) and scanning tunneling microscopy (STM). Formations of Ni–N chemical bonds and NiN monolayer at the surface are confirmed by XPS on the N-adsorbed Cu(0 0 1) surfaces after Ni deposition and subsequent annealing to 670 K. A c(2 × 2) structure is always observed in the LEED patterns, which is a quite contrast to the (2 × 2)p4g structure observed usually at the N-adsorbed Ni(0 0 1) surface. Atomic images by STM indicate the mixture of Ni–N and Cu–N structures at the surface. Density of the trenches on the N-saturated surface decreases and the grid pattern on partially N-covered surfaces becomes disordered with increasing the Ni coverage. These results are attributed to the decrease of the surface compressive stress at the N-adsorbed Cu surface by mixing Ni atoms.