The effect of electric field strength on electroplex emission at the interface of NPB/PBD organic light-emitting diodes

Organic light-emitting diode (OLED) based on two kinds of blue emission materials N,N′-bis(1-naphthyl)-N,N′-diphenyl-l,l′-diphenyl-4,4′-diamine (NPB) and 2-(4-biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole (PBD) was fabricated. There is only one emission peak in photoluminescence (PL) spectrum which originates from NPB exciton emission. And the electroluminescence (EL) emission peaks have an apparent red-shift with the increase of driving voltage. The red-shift emission from exciplex emission could be ruled out. Thus, by the method of Gaussian fitting it should be ascribed to the overlap of exciton emission and electroplex emission which occurs at the interface between NPB and PBD. The formation of the electroplex emission under high electric field is analyzed.     

Reduction of driving voltage in organic light-emitting diodes with molybdenum trioxide in CuPc/NPB interface

A novel structure of organic light-emitting diode was fabricated by inserting a molybdenum trioxide (MoO₃) layer into the interface of hole injection layer copper phthalocyanine (CuPc) and hole transport layer N,N′-diphenyl-N,N′-bis(1-napthyl-phenyl)-1,1′-biphenyl-4,4′-diamine (NPB). It has the configuration of ITO/CuPc(10 nm)/MoO₃(3 nm)/NPB(30 nm)/ tris-(8-hydroxyquinoline) aluminum (Alq₃)(60 nm)/LiF(0.5 nm)/Al. The current density-voltage-luminance (J-V-L) performances show that this structure is beneficial to the reduction of driving voltage and the enhancement of luminance. The highest luminance increased by more than 40% compared to the device without hole injection layer. And the driving voltage was decreased obviously. The improvement is ascribed to the step barrier theory, which comes from the tunnel theory. The power efficiency was also enhanced with this novel device structure. Finally, “hole-only” devices were fabricated to verify the enhancement of hole injection and transport properties of this structure.     

利用NPB/MoO3/NpB作为空穴传输层的低驱动电压的有机发光器件

通过引入(NPB/MoO3)x/NPB作为空穴传输层,获得了低驱动电压的有机电致发光器件(OLEDs),(NPB/MoO3)x为多层结构(x为0,1和2).通过对比发现,在相同亮度下,x=1对应的器件具有最低的工作电压.这是由于在NPB和MoO3之间产生了电荷转移复合物(charge transfer,CT),这将会降低器件的空穴注入势垒,从而降低其工作电压,文中所研究器件为基于8-羟基喹啉铝(tris(8-hydroxyquino-line)aluminum,Alq3)的绿光器件.与x=0时的普通器件相比,在亮度为1 000 cd·m-2时,x=1时的工作电压降低了 0.8 V.     

White organic light-emitting diodes based on electroplex from polyvinyl carbazole and carbazole oligomers blends

White organic light-emitting diodes with a blue emitting material fluorene-centred ethylene-liked carbazole oligomer (Cz6F) doped into polyvinyl carbazole (PVK) as the single light-emitting layer are reported. The optical properties of Cz6F, PVK, and PVK:Cz6F blends are studied. Single and double layer devices are fabricated by using PVK: Cz6F blends, and the device with the configuration of indium tin oxide (ITO)/PVK:Cz6F/ tris(8-hydroxyquinolinate)aluminium (Alq₃)/LiF/Al exhibits white light emission with Commission Internationale de l'éclairage chromaticity coordinates of (0.30, 0.33) and a brightness of 402~cd/m². The investigation reveals that the white light is composed of a blue--green emission originating from the excimer of Cz6F molecules and a red emission from an electroplex from the PVK:Cz6F blend films.     

Electroplex emission at PVK/Bphen interface for application in white organic light-emitting diodes

White organic light-emitting diode (WOLED) with a structure of ITO/poly(N-vinylcarbazole) (PVK)/4,7-diphenyl-1, 10-phenanthroline (Bphen)/tris(8-hydroxyquinoline)aluminum (Alq₃)/LiF/Al has been fabricated via the thermal evaporation technique. The electroluminescence (EL) spectrum of the as-fabricated WOLED covers from 380 to 700 nm of the visible light region with a wide blue emission from PVK and an interesting new red emission. The red emission at 613 nm in EL spectra of the WOLED was attributed to electroplex emission at PVK/Bphen interface since it was not observed in photoluminescence spectra. The WOLED showed a Commission International De l'Eclairage coordinate of (0.31, 0.32), which is very close to the standard white coordinate (0.33, 0.33).     

Excited states structure and processes: Understanding organic light-emitting diodes at the molecular level

Photo- or electro-excited states in polyatomic molecules, aggregates, and conjugated polymers are at the center of organic light-emitting diodes (OLEDs). These can decay radiatively or non-radiatively, determining the luminescence quantum efficiency of molecular materials. According to Kasha’s rule, light-emission is dictated by the lowest-lying excited state. For conjugated polymers, the electron correlation effect can lead the lowest-lying excited state to the even-parity 2A_g state which is non-emissive. To understand the nature of the low-lying excited state structure, we developed the density matrix renormalization group (DMRG) theory and its symmetrization scheme for quantum chemistry applied to calculate the excited states structure. We found there are three types of 1B_u/2A_g crossover behaviors: with electron correlation strength U$U$, with bond length alternation, and with conjugation length. These directly influence the light-emitting property.     

量子阱结构对有机电致发光器件效率的影响

实验中共制备了五种有机量子阱结构电致发光器件,分别对这五种量子阱结构器件的电致发光特性进行了研究,分析了量子阱结构的周期数和势垒层的厚度对器件电学性能的影响.实验结果表明适当周期数的量子阱结构器件的亮度和电流效率比传统的三层结构器件的要大,主要原因是量子阱结构对电子和空穴的限制作用,这种限制作用提高了电子和空穴在发光层中形成激子和复合的概率,从而提高了发光的亮度和效率.当改变阱结构器件中势阱层的厚度时,也会对器件的亮度和效率产生影响,采用适当的势阱层厚度能够提高器件的亮度和效率. 关键词： 量子阱结构 电致发光 电流效率 光谱     

有机层界面对双层有机发光二极管复合效率的影响

建立了双层有机发光二极管中载流子在有机层界面复合的无序跳跃理论模型.由于有机分子材料的空间及能带结构的无序性，采用刚体模型处理有机层界面问题是不恰当的，而采用无序跳跃模型比较合理.复合效率及复合电流由载流子跳跃距离、有机层界面的有效势垒高度及该界面处的电场强度分布所决定：在双层器件ITO/α-NPD/Alq₃/Al中，当所加电压小于19.5V时，复合效率随着载流子跳跃距离的增加而增加，而大于19.5V时，复合效率随着其距离的增加而减少；复合效率随着有机层界面有效势垒高度的增加而增加； 关键词： 有机层界面 双层有机发光二极管 复合效率 有效势垒高度 无序跳跃模型     

Influence of heterojunction interface on exciplex emission from organic light-emitting diodes under electric fields

In this paper, electroluminescence from organic light-emitting diodes based on 2-(4^′-biphenyl)-5-(4^′′-tert-butylphenyl)-1,3,4-oxadiazole (PBD) and N,N^′-diphenyl-N,N^′-bis(3-methylphenyl)-(1,1^′-biphenyl)-4,4^′-diamine (TPD) is reported. Based on the exciplex emission from the TPD/PBD interface under high electric fields, the influence of the TPD/PBD interface on exciplex emission was investigated by increasing the number of TPD/PBD interfaces while keeping both the total thickness of the TPD layer and the PBD layer constant in the multiple quantum-wells (MQW) device ITO/TPD/[PBD/TPD]_n/PBD/Al (n is the well number that was varied from 0 to 3). Our experimental data shows that exciplex emission can be enhanced by suitably increasing the well number of this kind of MQW-like device. PACS 78.60.Fi; 78.55.Kz; 73.61.Ph     

Interfacial electronic structure of molybdenum oxide on the fullerene layer,a potential hole-injecting layer in inverted top-emitting organic light-emitting diodes

The interfacial electronic structures of molybdenum oxide (MoO_x) deposited on fullerene (C₆₀) which could be used as a hole-injecting layer in inverted top-emitting organic light-emitting diodes (TE-OLEDs) were investigated by photoemission spectroscopy. The hole-injecting barrier height (Φ_B^h) at each interface investigated by an ultraviolet photoemission spectroscopy was reduced to from 1.4 to 0.1 eV as the thickness of MoO_x (Θ_MoOx) was increased from 0.1 to 5.0 nm on C₆₀. In these interface system, the sign of vacuum-level shift, highest occupied molecular orbital (HOMO)-level shift, and core-level shifts were all positive indicating that the interface mechanism is attributed to the work-function differences due to a band bending at these interfaces. Moreover, the near-edge X-ray absorption fine structure spectra at carbon K-edge did not show any structural modification as well as any chemical reaction at the MoO_x-on-C₆₀ interfaces when Θ_MoOx was changed on C₆₀. From these results, the inverted TE-OLED with C₆₀ (5.0 nm)/MoO_x (5.0 nm) showed the power efficiency of 1.7 lm/W at a luminance of about 1000 cd/m² and the maximum luminance of about 76.000 cd/m² at the bias voltage of 11.0 V. It exhibited the highest performance among the inverted TE-OLEDs fabricated as a function of MoO_x thickness from 0 to 5.0 nm.     

Luminescence properties of type-II quantum well light-emitting diodes formed with NPB and Alq3

The organic quantum well devices which are similar to the type-II quantum well of inorganic semiconductor have been fabricated. In the electroluminescence, the blue shift of spectrum with increasing applied voltage is observed, which is interpreted by exciton confinement effect and polarization effect, and the generation of exciton, including carrier injection and energy transfer, is discussed. This energy transfer from barrier to well is studied by photoluminescence and is interpreted in terms of Förster energy transfer. The electromodulation of photoluminescence demonstrates the quenching mainly comes from the dissociation of exciton in NPB and that in Alq₃ is very stable.     

Exciton dissociation in organic light emitting diodes at the donor-acceptor interface

Experimental in situ photoluminescence and transient photovoltage results show that the interface formed by N, N{'}-Bis(naphthalene-1-yl)-N, N{'}-bis(phenyl) benzidine (NPB) and tris(8-hydroxyquinoline) aluminum (Alq{3}) acts as an exciton dissociation site. Because of this dissociation effect, excitons formed in NPB at or within a diffusion length of the interface tend to dissociate before they radiatively decay to generate blue light. This suggests that the action of the "hole-blocking layer" used in indium tin oxide\NPB\hole-blocking layer\Alq{3}\aluminium to promote blue light emission from the NPB is more "exciton dissociation inhibition" than "hole blocking."     

Study on electroluminescence processes in dye-doped organic light-emitting diodes

Electroluminescence (EL) mechanism of dye-doped organic light-emitting diodes (OLEDs) was investigated by using three familiar fluorescent dyes, i.e., 5,12-Dihydro-5,12-dimethylquino [2,3-b]acridine-7,14-dione (DMQA), 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB), and 5,6,11,12-tetraphenylnaphthacene (Rubrene). EL spectra of the doped devices with structure of indium tin oxide (ITO)/N,N′-bis-(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′- diamine (NPB) (40 nm)/tris-(8-hydroxyquinolate)-aluminum (Alq₃) (x nm, x=0–40 nm)/dye: Alq₃ (weight ratio≈1%, 2 nm)/Alq₃ (48−x nm)/MgAg indicated that direct carrier trapping (DCT) process dominated light emission of devices. As a result, investigation of carrier-recombination site via doping, which is conventionally applied in OLEDs, is questionable since the doping site and the dopant itself may significantly influence the carrier-recombination process in the doped devices.     

Analysis of undulated micro-cavity in organic light-emitting diodes

This paper investigates the internal physical mechanisms of undulated micro-cavity that controls the emission wavelength in organic light-emitting diodes (OLEDs). Finite-difference-time-domain method is applied to a previously manufactured OLED design featuring optical structure on a wavy over-coat layer. The emission spectrum of dipole oscillation is calculated with various amplitudes of undulation and emission angles. In addition, the guided mode of an undulated micro-cavity is analyzed compared with that of a flat micro-cavity.     

Influence of organic capping layers on the performance of transparent organic light-emitting diodes

We investigate a set of transparent organic LEDs (TOLEDs) with different organic capping layer (OC) thicknesses to understand the capping layer effect. We find that thickness variation of the OC strongly influences the emission properties of TOLEDs and exhibits different trends for top or bottom emission. The external quantum efficiency for the top side can be enhanced by a factor of 63%, but that of the bottom side only by 4% compared to a reference device without an OC. Additionally, we demonstrate that the introduction of the OC is an effective method to control the bottom-to-top emission ratio within a measured range from 2.87 to 6.05.     

Low driving voltage in organic light-emitting diode using MoO3/NPB multiple quantum well structure in hole transport layer

Driving voltage of organic light-emitting diode (OLED) is lowered by employing molybdenum trioxide (MoO₃)/N, N'-bis(naphthalene-1-yl)-N,N'-bis(phe-nyl)-benzidine (NPB) multiple quantum well (MQW) structure in hole transport layer. For the device with double quantum well (DQW) structure of ITO/ [MoO₃ (2.5 nm)/NPB (20 nm)]₂/Alq₃(50 nm)/LiF (0.8 nm)/Al (120 nm)], the turn-on voltage is reduced to 2.8 V, which is lowered by 0.4 V compared with that of the control device (without MQW structures), the driving voltage is 5.6 V, which is reduced by 1 V compared with that of the control device at the 1000 cd/m². In this work, the enhancement of the injection and transport ability for holes could reduce the driving voltage for the device with MQW structure, which is attributed not only to the reducing energy barrier between ITO and NPB, but also to the forming charge transfer complex between MoO₃ and NPB induced by the interfacial doping effect of MoO₃.     

Influence of capacitance effect on alternating-current organic light-emitting diodes

The capacitance effect on ITO/poly[2-methoxy-5-[(2′-ethylhexyl)oxy]-p-phenylenevinylene] (MEH-PPV)/Al is studied by impedance spectroscopy technology, and the electroluminescence (EL) mechanism of this device driven by a sinusoidal alternating-current (AC) bias is suggested. By calculating the RC time constant of the device, we find that it is in good agreement with the lag-time between the EL and applied AC bias. Also, the influence of operating frequency on the EL intensity of the device is presented and it is concluded that a low operating frequency is good for a high device performance.     

BEEM studies of the PtSi/Si(100) interface electronic structure

The aim of the present work is a comparative study by ballistic electron emission microscopy (BEEM) of PtSi/n-Si(100) interface electronic structures using the assumption of an energy-dependent transmission coefficient or an energy-independent transmission coefficient and the possible explanation of the standard deviation of the barrier height from the most probable barrier height. PtSi/n-Si(100) interfaces have been studied for PtSi layers with an average estimated thickness of 2–3 nm. Locally measured barrier heights show distributions with the most probable values of barrier heights between 0.734 eV and 0.829 eV and with standard deviations from these most probable values of barrier heights in the range 0.010–0.066 eV. The assumption of an energy-independent coefficient for transmission of electrons through the interface is more preferable since the treatment of experimental results using a square-law leads to a most probable value of the barrier height in accordance to other measurements. The standard deviations of barrier heights from the most probable barrier heights may be explained by the heterogeneity of the PtSi layer thickness. The experimental results show lower barrier height for a higher PtSi layer thickness. The decreasing barrier height is accompanied by an increasing amount of Pt interstitial atoms.