Formation of high density TiN nanocrystals and its application in non-volatile memories

Non-volatile memory based on TiN nanocrystal （TiN-NC） charge storage nodes embedded in SiO2 has been fabricated and its electrical properties have been measured. It was found that the density and size distribution of TiN-NCs can be controlled by annealing temperature. The formation of well separated crystalline TiN nano-dots with an average size of 5 nm is confirmed by transmission electron microscopy and x-ray diffraction, x-ray photoelectron spectroscopy confirms the existence of a transition layer of TiNxOy/SiON oxide between TiN-NC and SiO2, which reduces the barrier height of tunnel oxide and thereby enhances programming/erasing speed. The memory device shows a memory window of 2.5V and an endurance cycle throughout 10^5. Its charging mechanism, which is interpreted from the analysis of programming speed （dVth/dt） and the gate leakage versus voltage characteristics （Ig vs Vg）, has been explained by direct tunnelling for tunnel oxide and Fowler Nordheim tunnelling for control oxide at programming voltages lower than 9V, and by Fowler-Nordheim tunnelling for both the oxides at programming voltages higher than 9V.     

Synthesis of crystalline TiN and Si particles by laser ablation in liquid nitrogen

Laser ablation of titanium and silicon targets immersed in liquid nitrogen was carried out using a YAG laser at 1.06 μm. Synthesized particles were collected and were characterized by TEM, SEM, EDS, XRD, and XPS. In the case of a titanium target, the synthesized particles had an atomic ratio of N/Ti=0.4 and a polycrystalline structure with many XRD peaks of TiN. This result indicates the usefulness of laser ablation in liquid nitrogen for synthesizing nitrides. On the other hand, in the case of a silicon target, the nitridation of the synthesized particles was negligible, and the synthesized particles had a polycrystalline structure of pure cubic silicon. This means that the oxygen-free environment realized by liquid nitrogen is useful for synthesizing particles with negligible oxidation.     

直流磁控溅射制备超导TiN薄膜

采用直流磁控溅射法在高阻硅上室温生长TiN超导薄膜.制备了不同溅射功率、溅射气压以及N2/Ar比份条件下的样品.综合物性测量系统(PPMS)测出了样品的超导临界温度Tc在3.2~4.0K之间,给出了Tc与制备条件的关系.X射线衍射(XRD)分析测量了样品的(111)TiN衍射峰半高宽(FWHM)、晶格常数.原子力显微镜(AFM)测量得到表面粗糙度(RES)最好为1.716nm,且给出较高溅射功率有利于降低表面粗糙度.     

Isostructural Phase Transition of TiN under High Pressure

In situ high-pressure energy dispersive x-ray diffraction experiments on polycrystalline powder TiN with NaCltype structure have been conducted with the pressure up to 30.1 GPa by using a diamond anvil cell instrument with synchrotron radiation at room temperature. The experimental results suggest that an isostructural phase transition might exist at about 7 GPa as revealed by the discontinuity of V/Vo with pressure.     

不锈钢管道低温溅射镀TiN薄膜技术

 设计了一套适用于加速器细长管道真空室的低温溅射镀TiN薄膜装置。利用该装置，对86 mm×2 000 mm的不锈钢管道真空室进行溅射镀TiN膜实验，并对镀膜实验结果进行分析，得到了适用于加速器管道真空室内壁溅射镀TiN膜的表面处理参数。样品测试结果表明：在压强为80～90 Pa、基体温度为160~180 ℃的镀膜参数下，不锈钢管道内壁获得的TiN薄膜最佳，薄膜沉积速率为0.145 nm/s。镀膜后真空室的二次电子产额明显降低。     

Toughening through multilayering in TiN–AlTiN films

The damage response of columnar multilayers of TiN and AlTiN to Vickers indentation is studied through focused ion beam machining and elastic modelling. Multilayers display an enhanced resistance, which increases with layer refinement, to the multiple fracture modes that appear at high loads in these materials, including edge (nested) cracks and inclined shear cracks. Measurements of layer thickness reveal that multilayers display additional modes of plastic deformation that lead to permanent compression and bending of the film. An elastic model of contact deformation in a bilayer where plasticity is mimicked by greatly enhanced elastic compliance of the film is used to rationalize the trends in crack resistance. It is shown that the enhanced toughness is not due to any increase in the strain capacity (hardness/modulus) of the film material, brought about by multilayering.     

TiN镀层的一级和二级Raman散射

我们观测到了TiN镀层的一级和二级Raman散射,初步研究了TiN镀层的沉积参数和镀层性质对Raman谱的影响。结果表明TiN镀层的Raman散射不同于体材料氮化钛的Raman散射,特别是在二级Raman散射部分。     

TaN/TiN和NbN/TiN纳米结构多层膜超硬效应及超硬机理研究

采用射频磁控溅射方法制备单层TaN,NbN和TiN薄膜和不同调制周期的TaN/TiN和NbN/TiN纳米多层膜.薄膜采用X射线衍射仪、高分辨率透射电子显微镜和显微硬度仪进行表征.结果表明TaN/TiN和NbN/TiN纳米多层膜在一定的调制周期范围内均呈共格界面,相应地均出现了超硬效应,且最大硬度值接近.分析了TaN/TiN与NbN/TiN纳米多层膜的超硬机理,TaN/TiN的晶格错配度与NbN/TiN的接近,但TaN/TiN的弹性模量差与NbN/TiN的有一定的差别,表明由于晶格错配使共格外延生长在界面处 关键词： TaN/TiN纳米多层膜 NbN/TiN纳米多层膜 外延生长 超硬效应     

等离子体化学气相沉积TiN中参数的研究

一、引言 等离子体化学气相沉积(PCVD)薄膜是广泛应用的新技术。它沉积温度低,可沉积薄膜种类多,包括各种作为功能材料和结构材料的无机非金属薄膜。刘大明等对PCVD的动力学过程进行过研究。PCVD设备及工艺较简单,绕镀能力强,并且利用非平衡电离     

Nanocomposite Ni–TiN coatings prepared by ultrasonic electrodeposition

Nanocomposite Ni–TiN coatings were prepared by ultrasonic electrodeposition and the effects of ultrasonication on the coatings were studied. X-ray diffraction analysis was utilized to detect the crystalline and amorphous characteristics of the composite coatings. The surface morphology and metallurgical structure were observed by scanning electron microscopy, high-resolution transmission electron microscopy and scanning probe microscopy. The results showed that ultrasonication had great effects on TiN nanoparticles in composite coatings. The moderate ultrasonication conduced to homogeneous dispersion of TiN particles in the coatings. Moreover, the TiN nanoparticles that entered and homogeneously dispersed in the composite coating led to an increase in the number of nuclei for nucleation of nickel grains and inhibition of grain growth. Therefore, the introduction of ultrasonication and TiN nanoparticles resulted in the formation of smaller nickel grains. The average grain diameter of TiN particles was ∼33 nm, while Ni grains measured approximately 53 nm.