A mid-infrared tunable filter in a semiconductor-dielectric photonic crystal containing doped semiconductor defect

In this work, we theoretically analyze tunable filtering properties in a semiconductor-dielectric photonic crystal (SDPC) containing doped semiconductor defect in the mid-infrared frequency region. We consider two possible configurations of filter structures, the symmetric and asymmetric ones. With a defect of the doped n-type semiconductor, n-Si, the resonant transmission peak can be tuned by varying the doping concentration, that is, the peak wavelength will be shifted to the position of lower wavelength for both structures. Additionally, by increasing the defect thickness, it is also possible to have a filter with multiple resonant peaks, leading to a multichannel filter. The results provide another type of tunable filter in the defective SDPC that could be of technical use for semiconductor applications in optical electronics.     

色散负折射特异介质的1维光子晶体缺陷态

在1维光子晶体中引入色散负折射特异介质,分析了其介电常数和磁导率在微波区（1～10 GHz）与频率的关系。分别对以色散负折射介质为缺陷的正折射率介质光子晶体及以正折射率介质为缺陷的正负折射率介质光子晶体进行了数值仿真,得出了均匀平面电磁波在正入射和斜入射时的透射谱。结果表明:在介电常数和磁导率均为负值的不同禁带中,分别出现了单、双缺陷模。利用透射谱的这一特点,可实现单、双通道滤波。     

色散负折射特异介质的1维光子晶体缺陷态

在1维光子晶体中引入色散负折射特异介质,分析了其介电常数和磁导率在微波区（1～10 GHz）与频率的关系。分别对以色散负折射介质为缺陷的正折射率介质光子晶体及以正折射率介质为缺陷的正负折射率介质光子晶体进行了数值仿真,得出了均匀平面电磁波在正入射和斜入射时的透射谱。结果表明：在介电常数和磁导率均为负值的不同禁带中,分别出现了单、双缺陷模。利用透射谱的这一特点,可实现单、双通道滤波。     

光子晶体多通道可调谐滤波器的理论研究

为了实现光子晶体的多通道滤波,对设计出的一维掺杂光子晶体进行了数值计算和理论分析。结果表明：多通道透射峰的波长与空气膜厚度呈线性变化,不同厚度的空气膜可以截到数目不同的透射峰,多通道透射峰的半高宽随光子晶体折射率n₂的增加而减小。以此为基础,设计出滤波通道波长的可调范围达60nm,滤波通道半高宽的可调范围为1nm～5nm,滤波通道透射峰值大于0.98的一维光子晶体三通道可调谐滤波器。     

Spatial and frequency domain effects of defects in 1D photonic crystal

The aim of this paper is to present the analysis of influence of defects in 1D photonic crystal (PC) on the density of states and simultaneously spontaneous emission, in both spatial and frequency domains. In our investigations we use an analytic model of 1D PC with defects. Our analysis reveals how presence of a defect causes a defect mode to appear. We show that a defect in 1D PC has local character, being negligible in regions of PC situated far from the defected elementary cell. We also analyze the effect of multiple defects, which lead to photonic band gap splitting.     

Photonic band gap in a one-dimensional periodic structure with semiconductor metamaterial in the near infrared

We construct a one-dimensional photonic crystal (1DPC) by use of semiconductor metamaterial in the near infrared which is composed of Al-doped ZnO (AZO) and ZnO and dielectric material. The expressions of transmittance and field distribution are deduced by transfer matrix method, and the dispersion curves of anisotropic permittivity of semiconductor metamaterial are analyzed at different ratio of AZO and ZnO. At last simulation results are given to analyze the influence of thickness of dielectric material and incident angle on the transmittance of the proposed PC.     

Analysis of defect mode in a dielectric photonic crystal containing ITO defect

In this work, based on the use of ITO as a defect, we study the infrared defect mode in defective photonic crystal made of SiO₂ and InP. Due to the dispersion in the dielectric function of ITO, it is found that the defect mode is sensitive to the ITO thickness. The defect frequency is shown to be blue-shifted as the thickness of ITO decreases. In the angular dependence of defect mode, it is seen that the defect frequency is also blue-shifted when the angle of incidence increases for both TE and TM polarizations. However, the shifting feature is appeared to be nearly polarization-independent. The shift in the defect frequency enables us to employ ITO as a tunable agent in order to design a tunable photonic crystal filter in the infrared region.     

Single channel tunable wavelength demultiplexer using nonlinear one dimensional defect mode photonic crystal

Transmission characteristics of nonlinear one dimensional photonic crystal with a defect have been studied. GaAs/Si multilayer structure with a single defect has been simulated using transfer matrix method. In this study refractive indices of both layers have been taken to be dependent on intensity and wavelength simultaneously. It is found that central wavelength of defect mode change with intensity of wave. Average change in central wavelength of defect mode is 0.02 nm/(1 GW/cm²). This property can be exploited in the design of a single channel tunable wavelength division demultiplexer for optical communication.     

Properties of defect modes in one-dimensional photonic crystals containing two nonlinear defects

Transmission properties of one-dimensional photonic crystal with two nonlinear defects were investigated based on the nonlinear transfer matrix method. From the inspection of the optical bistabilities around different defect modes, it was found that the threshold of bistability for the bonding mode is always lower than that for the anti-bonding mode. When intensity of the incident wave increases bistability could happen at any wavelength larger than the resonance wavelength of the linear anti-bonding mode in the gap. The threshold of bistability increases initially with the wavelength, then decreases sharply in reaching the resonance wavelength of the linear bonding mode. The coupling behavior of the two defects was also discussed, and it was found that the threshold of bistability increases with the distance between the two defects. A flat spectrum similar to that formed in the photonic crystal molecules was obtained under certain incident intensity.     

一种紧凑的、可调的、基于缺陷共振的光开关

采用平面波展开法(PWM)和时域有限差分(FDTD)法,研究光在含点缺陷的光子晶体波导中的传输特性.计算结果表明,通过引入两共振腔(点缺陷),处于共振频率附近的光波将被完全反射回光子晶体波导.由于共振频率随点缺陷的折射率的变化而改变,这种现象可用来设计可调光开关. 关键词： 光子晶体波导 缺陷共振 光开关 透射率     

Investigation of defect modes in a defective photonic crystal with a semiconductor metamaterial defect

In this work, we theoretically investigate the properties of defect modes in a defective photonic crystal containing a semiconductor metamaterial defect. We consider the structure, (LH)^N/D^P/(LH)^N, where N and P are respectively the stack numbers, L is SiO₂, H is InP, and defect layer D is a semiconductor metamaterial composed of Al-doped ZnO (AZO) and ZnO. It is found that, within the photonic band gap, the number of defect modes (transmission peaks) will decrease as the defect thickness increases, in sharp contrast to the case of using usual dielectric defect. The peak height and position can be changed by the variation in the thickness of defect layer. In the angle-dependent defect mode, its position is shown to be blue-shifted as the angle of incidence increases for both TE and TM waves. The analysis of defect mode provides useful information for the design of tunable transmission filter in semiconductor optoelectronics.     

含双负缺陷的一维光子晶体耦合腔的杂质带特性

利用转移矩阵方法研究了含双负缺陷的一维光子晶体耦合腔的透射谱.计算结果表明，如果改变缺陷的折射率，缺陷模之间的耦合作用将发生改变，使得能隙中的杂质带也随之改变.若这个折射率取适当值，则可以在禁带中同时出现几个尖锐的透射峰和较宽的通带，这种结构可同时用于多通道窄带滤波和宽带滤波. 关键词： 光子晶体 缺陷模 杂质带 滤波     

一维多缺陷光子晶体的缺陷模

设计了一个多缺陷的一维光子晶体,并利用传输理论研究其透射谱.利用泰勒展式的一级近似,得到了缺陷模频率的解析表达式,进而得到紧束缚理论中的耦合因子.这些结论与实验结果或数值模拟相符合,可以很好地描述缺陷模的有关规律,对多通道滤波器的设计具有指导意义. 关键词： 光子晶体 缺陷模 紧束缚方法 耦合因子     

声子晶体材料的吸收对弹性波缺陷模的影响

为了研究声子晶体材料的吸收对缺陷模的影响,引入复波数,推导出一维掺杂声子晶体的转移矩阵,计算了衰减系数和周期数对透射波和反射波中缺陷模的影响。得出:当周期数一定时,衰减系数对一维掺杂声子晶体的透射波和反射波中的缺陷模都有显著的影响,缺陷模的峰值随衰减系数的增加而迅速减小,缺陷模的宽度随衰减系数的增加而增大。当衰减系数一定时,缺陷模的峰值和宽度都随周期数的增加而迅速减小。     

半导体量子阱材料微加工光子晶体的光学特性

利用聚焦离子束刻蚀方法和电子束制版结合干法刻蚀方法制备了二维近红外波段光子晶体，发现两种方法都可以制备出均匀的二维光子晶体，聚焦离子束方法操作简单，电子束制版结合干法刻蚀方法操作步骤复杂.光谱测试表明，利用聚焦离子束方法在有源材料上刻蚀的光子晶体不发光，而电子束制版结合干法刻蚀方法制备的小晶格常数光子晶体即使有些无序，其出光效率也提高到没有光子晶体时的两倍.对两种方法所加工的光子晶体不发光和提高出光效率的机理进行了分析. 关键词： 聚焦离子束 电子束制版 光子晶体 出光效率     

二维正方各向异性碲圆柱光子晶体完全禁带中缺陷模的FDTD计算分析和设计

用FDTD方法计算了二维正方晶胞各向异性碲圆柱光子晶体的点缺陷模.为了得到TE,TM模式在完全禁带中具有相同共振频率的缺陷模,对中心点缺陷半径Rd以及中心附近对称位置的点缺陷半径Rn做了一系列微调.计算表明,TM模对于Rn的变化不敏感,而TE模随着Rn的改变出现了明显的规则的移动趋势.通过计算分析,发现对应于f=0.4的背景(R=0.3568a),当Rd=0.55a,Rn=0.26a时在完全禁带中TE和TM的缺陷模具有相同的共振频率ω0=0.2466ωe(其中ωe=2πca,a为晶格常数) 关键词： 时域有限差分法 光子晶体 缺陷模 各向异性     

Low threshold laser cavities of two-dimensional photonic crystal line defect mode

Two-dimensional (2D) rod-type photonic crystal (PC) line defect waveguide (LDW) laser cavities based on three types of line defect modes with zero group velocity are studied by using finite-difference time-domain (FDTD) method. These laser cavities have high quality (Q) factor, better localization of light, non-uniform gain distribution and small overlap between gain medium and light field. Therefore, they have the advantages over conventional and air-bridge PC cavities with uniform gain, such as low threshold, single mode lasing and effectively avoiding thermal effect. From their comparison, one can find the mode at middle Brillouin zones (BZ) is the best one to be used as lasing mode. Its dynamic lasing process and lasing features are demonstrated by the numerical experiment where the FDTD method coupling Maxwell's equations with the rate equations of electronic population is used.     

矩形掺杂光子晶体中电磁波的模式和缺陷模

利用一维矩形掺杂光子晶体中电磁波横向受限的条件,推导出电磁波在其中各个模式满足的关系式,利用它研究了电磁波各模式的特性.利用特征法研究了电磁波的缺陷模随模式量子数和矩形边长的变化规律,得出了一维矩形掺杂光子晶体缺陷模的新结构.     

矩形掺杂光子晶体中电磁波的模式和缺陷模

利用一维矩形掺杂光子晶体中电磁波横向受限的条件,推导出电磁波在其中各个模式满足的关系式,利用它研究了电磁波各模式的特性.利用特征法研究了电磁波的缺陷模随模式量子数和矩形边长的变化规律,得出了一维矩形掺杂光子晶体缺陷模的新结构. 关键词： 矩形光子晶体 受限 模式 缺陷模