Band gap tuning of defective silicon carbide nanotubes under external electric field: Density functional theory

We have theoretically investigated the effect of applying longitudinal and transverse electric field on silicon carbide nanotubes with different orientations of Stone Wales defects. We found that each type of Stone Wales defects maintained different formation energy. We have also successfully proved that the orientation of Stone Wales defects in silicon carbide nanotubes response quite differently upon applying external electric field, whereas, two important and interesting phenomena were observed. First, the semiconductor-metal phase transition occurred in silicon carbide nanotubes as well as the three types of Stone Wales defects. However, clear band gap variations were observed in all silicon carbide nanotubes under study. Second, the band gap variations in pristine silicon carbide nanotubes and nanotubes with different orientations of Stone Wales defects have the same trend, even though all silicon carbide nanotubes have clear band gap values under different strengths of the applied external electric field. However, band gap tuning under longitudinal electric field is less significant compared to band gap tuning under the transverse electric field.     

Dependence of electronic and optical properties of multilayer SiC and GeC on stacking sequence and external electric field

The electronic and optical properties of different stacked multilayer SiC and GeC are investigated with and without external electric field (EEF). The band gaps of multilayer SiC and GeC are found smaller than that of monolayer SiC and GeC due to the interlayer coupling effect. When EEF is applied, the direct band gaps (ΔK–M) of multilayer SiC and direct band gaps (ΔK–K) of multilayer GeC all turn to indirect band gaps (ΔK–G) as the band at the G point drops dramatically toward zero. The imaginary part ε₂(ω)s of multilayer SiC and GeC show that new absorption peaks between 2–5 eV appear when the polarized direction is perpendicular to the layer plane, and new absorption peaks in infrared region appear as the EEF is higher than a certain point when the polarized direction is parallel to the layer plane. Our calculations reveal that different stacking sequences and EEF can provide a wide tunable band structures and optical properties for multilayer SiC and GeC.     

Tunable electronic and optical properties of SnC/BAs heterostructure by external electric field and vertical strain

Based on the first-principles method, we investigate the electronic structure of SnC/BAs van der Waals (vdW) heterostructure and find that it has an intrinsic type-II band alignment with a direct band gap of 0.22 eV, which favors the separation of photogenerated electron–hole pairs. The band gap can be effectively modulated by applying vertical strain and external electric field, displaying a large alteration of band gap via the strain and experiencing an indirect-to-direct band gap transition. Moreover, the band gap of the heterostructure varies almost linearly with external electric field, and the semiconductor-to-metal transition can be realized in the presence of a strong electric field. The calculated band alignment and the optical absorption reveal that the SnC/BAs heterostructure could present an excellent light-harvesting performance. Our designed heterostructure is expected to have great potential applications in nanoelectronic devices and photovoltaics and optical properties.     

Structural and electronic properties of the TiC nanotubes: Density functional-based tight binding calculations

Atomic models of the hypothetical single- and multi-walled cylindrical- and prismatic-like TiC nanotubes have been constructed and their structural and electronic properties have been studied by means of density functional-based tight binding (DFTB) method. The electronic bands, densities of states and binding energies are analyzed as a function of the TiC tubes sizes. Our calculations showed that TiC nanotubes are semiconducting, in contrary to the metallic-like crystalline TiC, and the band gaps tend to vanish as the number of tube walls increase.     

外电场下L-茶氨酸分子的结构特征与光谱性质

L-茶氨酸(N-乙基-L-谷氨酰胺)是一类具有降压、抗氧化的非蛋白氨基酸,研究外场下它的结构和光谱特征有助于人们更好地认识L-茶氨酸分子的性质.基于密度泛函理论,利用B3LYP方法,在6-311g(d,p)基组水平上对L-茶氨酸分子进行几何构型优化,在此基础上计算L-茶氨酸分子在不同外电场下(0～0.0125 a.u.)的分子各键长与振动频率,得到对应的红外光谱.同时,在相同的基组下采用含时密度泛函方法(TD-DFT)计算外电场对分子的激发态、前线轨道和能隙的影响.结果表明:分子结构及其紫外、红外光谱都随外电场强度发生变化.随外电场的增加,伸缩振动频率红移,弯曲振动频率蓝移;最高占据轨道的能量(E_(HOMO))与最低空轨道的能量(E_(LUMO))发生改变,前线轨道能隙先小幅增加后随电场减小,分子活性先减小后增强;紫外吸收光谱先蓝移后红移.本研究对L-茶氨酸分子的检测、合成及其生物活性的研究可提供理论依据.     

外场作用下吡咯分子的物理性质研究

吡咯分子是重要的有机半导体材料,适用于微电子和光电等多个领域,成功地引领了一场新的技术革命.本文基于密度泛函理论,使用B3LYP/6-311++g (d,p)方法研究了在0-0.03 a.u.的电场强度作用下,吡咯分子的物理特性变化规律.发现随着电场的增大,分子逐渐沿x轴方向被压缩,分子的偶极矩在减小,总能量在减小.分子的最高占据分子轨道能量基本保持不变,最低未占据分子轨道能量在不断地下降,致使分子的能带隙不断减小,无法保证能带隙的稳定性,从而降低了半导体材料的使用寿命.通过含时密度泛函计算可以发现:在不同的电场下,吡咯分子均出现两个紫外吸收峰,其中两个C=C双键的π-π^*跃迁占主要贡献.但随着电场强度的增大,其在跃迁中的占比越来越小.考察在0.02 a.u.的电场下,紫外吸收峰主要由第6、11、13、15等激发态决定.这为更好地研究和设计半导体材料提供了良好的理论依据.     

外电场下C_4F_7N分子的结构与特性

C_4F_7N作为优质的SF_6环保型替代气体而备受关注.为了研究外电场对C_4F_7N分子结构和性能的影响,本文采用密度泛函明尼苏达M06-2X方法分别在6-311g(d,p)基组和aug-cc-pVTZ基组水平上对C_4F_7N分子进行优化,分析了不同外电场(0-0.040 a.u., 1a.u.=5.142×10~(11) V/m)作用下分子的结构和能量变化,外电场对分子红外光谱、ADCH电荷、偶极矩以及极化率的影响.研究结果表明:随着电场的增强,分子各键长均发生变化,其中R(1,4)、R(4,5)、R(1,12)、R(2,7)变化明显,R(1,4)、R(4,5)键长逐渐伸长,R(1,12)、R(2,7)键长逐渐缩短,分子总能量降低,偶极矩和极化率升高,C_4F_7N分子稳定性随着电场的增强而降低;分子红外光谱高频区吸收峰较为密集,且既有红移也有蓝移;ADCH原子电荷发生显著变化.     

外电场对对硝基氯苯分子结构与电子光谱影响的研究

为达到降解有机污染物硝基氯苯的目的, 采用外加平行电场的方法, 研究电场对硝基氯苯化合物的分子结构和电子光谱等的影响. 以对硝基氯苯分子为研究对象, 采用密度泛函B3LYP方法在6-311+g(d, p) 基组水平上优化并计算了不同外电场作用下pCNB的基态分子结构、电偶极矩和分子总能量, 在此基础上采用含时密度泛函研究了该分子的前六个激发态的波长、振子强度受外电场的影响规律.结果表明: C–Cl, C–N键长随电场增加而快速增大, 即键能快速减小, 同时苯环上的C–C, C–H键长的变化很小, 且有增有减, 说明分子的降解可能是C–Cl, C–N键断裂而苯环则相对稳定. 同时分子总能量随电场先增大后变小, 电偶极矩刚好相反.另外, 最大吸收波长λ_max 随电场先缓慢减小, 后快速增大, 导致电子跃迁相对容易, 而振子强度随电场变化则相对比较复杂. 关键词： 对硝基氯苯 外电场 密度泛函 含时密度泛函     

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.     

外电场作用下FO分子的特性研究

采用密度泛函的B3P86方法,以6-311+G(3df)为基函数优化得到不同外电场下FO基态分子的稳定几何结构、键长、总能量、HOMO能级、LUMO能级、费米能级、能隙、红外光谱和谐振频率.结果表明,分子结构与外电场有着强烈的依赖关系,且对电场方向的依赖呈现出不对称性;随着正向电场的增大,HOMO能级、LUMO能级和费米能级是减小的,能隙是先增大后减小;红外光谱和谐振频率是增大的,而频率间隔是不断减小的.     

Effect of electric field on the electronic properties of functionalized germanane by organic molecular adsorption

Modulating the doping effect and charge transfer in germanane is very important for germanane-based electronic or optoelectronic devices with reproducible electrical characteristics. In this letter, we investigate the effect of electric field on the electronic properties of functionalized germanane by tetrathiafulvalene (TTF) molecular adsorption through first-principles calculations. It is found that the nondestructive n-type doping effect induced by tetrathiafulvalene (TTF) molecular adsorption could be linearly tuned by external electric field ranged from −0.3 V/Å to 0.3 V/Å. Especially under the electric field of −0.3 V/Å, an excellent n-type doping in germanane can be realized where the energy difference between the filled band maximum of dopant and the conduction band minimum of germanane for electron excitation is only 0.085 eV. More interestingly, once the external electric field exceeds 0.15 V/Å, the typical electron donor molecule TTF would even overturn to accept the electrons from germanane substrate.     

Hydrogen adsorption on SiC nanotube under transverse electric field

Using density functional theory, we present a model to illustrate that under a transverse electric field the overall amount of hydrogen storage can be increased on the SiC nanotube. Due to the cylindrical shape of the nanotube, an electric field does not have the similar effects on the different adsorption sites. Although it has the desired effects on some sites, the electric field may lead the binding energy to decrease on some other sites. We demonstrate that the binding energy decreases slightly just on the two small areas and increases significantly on the largest part of the nanotube surface.     

外场下SnS分子结构及其特性

对S原子采用6-311++G**基组,Sn原子采用SDB-cc-pVTZ基组,利用密度泛函(B3P86)方法对SnS分子进行了基态结构优化,并研究了外场作用下SnS基态分子键长、能量、能级分布、电荷布居分布、谐振频率和红外谱强度的影响规律.然后利用含时密度泛函(TD-B3P86)方法研究了SnS分子在外场下的激发特性.结果表明,在所加的电场范围内(-0.04 a.u.-0.04 a.u.),随着正向电场的增大,分子键长和红外谱强度均是先减小后增大;总能E,SnS基态分子的最高已占据轨道能量EH和谐振频率均是先增大后减小;分子的最低未占空轨道能量EL和能隙Eg均随正向电场的增大而减小.随着正向电场的增大,SnS分子由基态至前9个单重激发态跃迁的波长增大,激发能则减小.     

基于外电场作用氟氯碳酰的光谱特性和解离特性

采用密度泛函方法(DFT)在B3LYP/6-31G(d)水平上优化计算了在不同外电场作用下氟氯碳酰分子的物理性质,包括键长、键角、分子体系总能量、偶极矩、能隙、红外光谱、拉曼光谱以及解离特性.研究表明在外电场(-0.02—0.07 a.u.)作用下,氟氯碳酰分子结构有明显的变化,随着外电场的增强,分子C-O键长、C-Cl键长逐渐增大,C-F键长逐渐减小,分子体系总能量、能隙先增大后减小,偶极矩先减小后增大;分子红外光谱的O p-deform、CCl stretch(str)、CF str振动发生了蓝移,CO str振动发生了红移,CO deform振动先红移后蓝移,分子拉曼光谱的O p-deform、CCl str、CF str、CO str振动移动情况与红外光谱相同,当外电场强度为0.03 a.u.时,分子C-Cl势垒消失,分子发生解离,当外电场强度为-0.005 a.u.时,分子两个键断裂,发生逐步解离.研究工作为进一步研究氟氯碳酰分子的解离特性及臭氧层的保护提供理论依据.     

外场作用下蒽分子的激发特性研究

蒽(anthracene)具有良好的热稳定性以及较高的荧光量子产率的优点, 是最早用于研究有机发光器件(organic light-emitting device, OLED)的材料之一. 在本文中, 主要利用量子化学方法研究了不同外电场对蒽分子激发特性的影响规律. 首先采用密度泛函理论(density functional theory, DFT)在6-311G(d, p)基组水平上对蒽分子基态结构进行优化, 基于稳定基态结构, 利用含时密度泛函(time-dependent density functional theory, TDDFT)以及同一基组水平, 计算出蒽分子的前十个激发态的激发能、跃迁偶极矩、振子强度和紫外吸收光谱等数据. 然后以密度泛函B3P86方法优化出的不同外电场下蒽分子基态结构为基础, 使用TDDFT方法研究了不同外电场对蒽分子前线轨道能级和激发特性的影响规律. 结果显示, 无场时蒽分子在紫外区域234.50 nm处有一个较强的吸收峰, 对应基态电子跃迁至第5激发态吸收光子波长; 在外电场作用下, 蒽分子电子由基态跃迁到激发态的各项光谱参数均有显著变化, 加场后蒽分子的吸收光谱发生了红移, 由紫外波段移向了紫外–可见光波段, 与实验值相符合. 分子前线轨道的计算结果也表明蒽分子的最高占据轨道(highest occupied molecular orbital, HOMO)和最低未占据轨道(lowest unoccupied molecular orbital, LUMO)能量差值在不同电场下存在差异. 关键词： 蒽 外电场 激发特性     

几种硝基苯类炸药在外电场作用下的分子特性

采用密度泛函理论中的B3LYP方法,在6-31G*水平上研究了外电场对一些硝基苯类炸药分子的总能量、偶极矩、分子轨道能级和前线轨道能量差等分子特性的影响;考察了在外电场作用下分子前线轨道能量差与炸药的电火花感度之间的关系.结果表明,在外电场作用下分子总能量降低,偶极矩增大、前线轨道能量差减小;分子前线轨道能量差与炸药的电火花感度之间几乎线性相关,且外电场对这种线性相关性无明显影响.     

Stability and electronic structure of single-walled InN nanotubes

Based on density functional theory calculations, we predict the stability and electronic structures of single-walled indium nitride (InN) nanotubes. Compared with other group III-nitride nanotubes with a similar diameter, strain energies of InN nanotubes relative to their graphitic sheet are the lowest, suggesting the possibility of the formation of InN nanotubes. Considering the stability of a graphitic InN sheet, InN nanotubes are in metastable states with the stability between GaN nanotubes and AlN nanotubes. Contrary to the case of carbon nanotubes and BN nanotubes, the bond-length of both horizontal and vertical In–N bonds in InN nanotubes decreases as the tube diameter increases. InN nanotubes are all semiconductors with an almost constant band gap of about 1 eV. The existence of a direct gap in zigzag InN nanotubes and the small band gap indicate that they may have potential applications in light emitting devices and solar cells.     

First-principles study of the structural, elastic, electronic and optical properties of the monoclinic BiScO3

The structural, elastic, electronic and optical properties of the monoclinic BiScO₃ are investigated in the framework of the density functional theory. The calculated structural parameters are in agreement with the experimental values. Moreover, the structural stability of BiScO₃ system has been confirmed by the calculated elastic constants. The band structure, density of states, charge transfers and bond populations are also given. The results indicate that BiScO₃ has a direct band gap of 3.36 eV between the occupied O 2p states and unoccupied Bi 6p states, and its bonding behavior is a combination of covalent and ionic nature. Finally, the absorption spectrum, refractive index, extinction coefficient, reflectivity, energy-loss function and dielectric function of the monoclinic BiScO₃ are calculated. In addition, the variation of the static dielectric constants ε₁(0) as a function of pressure for BiScO₃ is also discussed.     

基于密度泛函理论的外电场下盐交联聚乙烯分子的结构及其特性

交联聚乙烯是主要的高压电缆绝缘材料.为了研究外电场对盐交联分子结构的影响,本文对Zn原子使用def2-TZVP基组, C, H, O原子使用6-31G(d)基组,运用明尼苏达密度泛函(M06-2X)对交联聚乙烯分子进行优化得到了它的稳定结构.并研究了不同外电场(0—0.020 a.u., 1 a.u.=5.142×10~(11)V/m)作用下盐交联聚乙烯分子结构和能量变化,外电场对前线轨道的能级和成分的影响,原子之间的键级、断键和红光光谱的变化.研究结果表明:随着电场的增大,交联聚乙烯分子从空间网状结构逐渐变成线性结构,总能量降低,但势能增大,偶极矩和极化率升高,交联聚乙烯分子的稳定性随着电场的增大而降低;最高占据轨道能级持续增大,最低空轨道能级从0.011 a.u.电场开始持续降低,能隙持续降低,临界击穿场强为11.16 GV/m;沿电场方向聚乙烯链端表现出亲核反应活性,它的C—C键更容易断裂,形成甲基碳负离子,逆电场方向聚乙烯链端表现出亲电反应活性,它的C—H键更容易断裂形成H正离子;分子红外光谱高频区吸收峰明显红移,低频区吸收峰既有红移又有蓝移.     

Magnetic,electronic, optical,and photocatalytic properties of nonmetal- and halogen-doped anatase TiO2 nanotubes

The structure stability, magnetic, electronic, optical, and photocatalytic properties of nonmetal (B, C, N, P, and S), and halogen (F, Cl, Br, and I)-doped anatase TiO₂ nanotubes (TNTs) have been investigated using spin polarized density functional theory. The N- and F-doped TNTs are the most stable among other doped TNTs. It is found that the magnetic moment of doped TNT is the difference between the number of the valence electrons of the dopant and host anion. All dopants decrease the band gap of TNT. The decrease in the band gap of nonmetal (C, N, P, and S)-doped TNTs, in particular N and P, is larger than that of halogen-doped TNTs due to the created states of the nonmetal dopant in the band gap. There is a good agreement between the calculation results and the experimental observations. Even though C-, N-, and P-doped TNTs have the lowest band gap, they cannot be used as a photocatalysis for water splitting. The B-, S-, and I-doped TiO₂ nanotubes are of great potential as candidates for water splitting in the visible light range.