Experimental and theoretical positron annihilation studies on bulk nickel silicides

Bulk nickel silicides (NiSi and NiSi₂) have been studied using the experimental positron lifetime and depth-resolved positron beam measurements. Ab-initio calculations of positron lifetime for the silicides have also been carried out using the atomic superposition method. For NiSi phase, it is found that the theoretically computed positron lifetime compares favourably with the experimentally deduced value indicating that NiSi is defect free. However, for NiSi₂, the experimental positron lifetime does not compare well with the theoretical value suggesting that NiSi₂ contains vacancy defects. This is further supported by the positron diffusion lengths deduced from the VEPFIT analysis of the positron beam results.     

Theoretical study on the Rocksalt structured positron annihilation in magnesium oxide

Based on the atomic superposition approximation （ATSUP） and first-principles pseudopotential plane-wave methods, the bulk and Mg mono-vacancy positron lifetime of magnesium oxide were calculated using Arponen-Pajamme and Borofiski-Nieminen positron-annihilation-rate interpolation formula respectively. The calculated values are in good agreement with experimental values and the first-principles method gives more convincing results. The positron annihilation density spectra analysis reveals that positrons mainly annihilate with valence electrons of oxygen atoms when the magnesium-vacancy appears within magnesium oxide.     

Theoretical study on the positron annihilation in Rocksalt structured magnesium oxide

Based on the atomic superposition approximation(ATSUP) and first-principles pseudopotential plane-wave methods,the bulk and Mg mono-vacancy positron lifetime of magnesium oxide were calculated using Arponen-Pajamme and Boron’ski-Nieminen positron-annihilation-rate interpolation formula respectively.The calculated values are in good agreement with experimental values and the first-principles method gives more convincing results.The positron annihilation density spectra analysis reveals that positrons mainly annihilate with valence electrons of oxygen atoms when the magnesium-vacancy appears within magnesium oxide.     

Self-implantation of Cz-Si: Clustering and annealing of defects

Observations of vacancy clusters formed in Czochralski (Cz) Si after high energy ion implantation are reported. Vacancy clusters were created by 2 MeV Si ion implantation of 1 × 10¹⁵ ions/cm² and after annealing between 600 and 650 °C. Doppler broadening measurements using a slow positron beam have been performed on the self-implanted Si samples, both as-implanted and after annealing between 200 and 700 °C for time intervals ranging from 15 to 120 min. No change in the S parameter was noted after the thermal treatment up to 500 °C. However, the divacancies (V₂) created as a consequence of the implantation were found to start agglomerating at 600 °C, forming vacancy clusters in two distinct layers below the surface; the first layer is up to 0.5 μm and the second layer is up to 2 μm. The S-W plots of the data suggest that clusters of the size of hexavacancies (V₆) could be formed in both layers after annealing for up to an hour at 600 °C or half an hour at 650 °C. After annealing for longer times, it is expected that vacancies are a mixture of V₆ and V₂, with V₆ most probably dominating in the first layer. Further annealing for longer times or higher temperatures breaks up the vacancy clusters or anneals them away.     

Free-volume defects investigation of GeS2-Ga2S3-CsI chalcogenide glasses by positron annihilation spectroscopy

The transformation behavior of free-volume defect in (80GeS₂-20Ga₂S₃)_100-x (CsI)_x (x = 0, 5, 10, 15 mol%) chalcogenide glasses was studied by employing positron annihilation spectroscopic technique, which could reveal valuable information for in-depth understanding of nano-structural defects in glassy matrix. The results indicate that the structural changes caused by CsI additives can be adequately described by positron trapping modes determined with two-state model. The initial addition of CsI (x = 5 mol%) led to a void contraction, whereas, the void agglomeration occurred with the increase of CsI and the free-volume defects of the glasses were obviously reduced. The atomic density ρ is inversely proportional to the number of these defects. Meanwhile, the UV cut-off edge shifts toward short-wavelength with increasing of CsI. This study provides the valuable information of defects evolution in GeS₂-Ga₂S₃-CsI glasses.     

Correlation between ferromagnetism and defects in MgO nanocrystals studied by positron annihilation

High purity MgO nanopowders were pressed into pellets and annealed in air from 100 to 1400 °C. Variation of the microstructures was investigated by X-ray diffraction and positron annihilation spectroscopy. Annealing induces an increase in the MgO grain size from 27 to 60 nm with temperature increasing up to 1400 °C. Positron annihilation measurements reveal vacancy defects including Mg vacancies, vacancy clusters, microvoids and large pores in the grain boundary region. Rapid recovery of Mg monovacancies and vacancy clusters was observed after annealing above 1200 °C. Room temperature ferromagnetism was observed for MgO nanocrystals annealed at 100, 700, and 1000 °C. However, after 1400 °C annealing, MgO nanocrystals turn into diamagnetic. Our results suggest that the room temperature ferromagnetism in MgO nanocrystals might originate from the interfacial defects.     

Positron annihilation studies of mesoporous silica films using a slow positron beam

Positron annihilation lifetime spectra were measured for mesoporous silica films, which were synthesized using triblock copolymer (EO₁₀₆PO₇₀EO₁₀₆) as a structure-directing agent. Different positron lifetime spectra for the deposited and calcined films indicated the formation of meso-structure after calcination, which was confirmed by Fourier transform infrared (FTIR) spectra and field emission-scanning electron microscopy (FE-SEM) observation. Open porosity or pore interconnectivity of a silica film might be evaluated by a two-dimensional positron annihilation lifetime spectrum of an uncapped film. Pore sizes and their distributions in the silica films were found to be affected by thermal treatments.     

The use of positron annihilation Doppler broadening spectroscopy in the characterization of radiochromic dosimetry films

The positron annihilation Doppler broadening (PADB) spectroscopy has been employed to probe the defects and structural changes of various types of materials. In this work, an investigation was carried out for the first time to use PADB spectroscopy in probing the γ irradiated radiochromic films. The GafChromic MD–55 and HD–V2 radiochromic films irradiated with absorbed doses ranges of 0–80 and 0–2000 Gy, respectively, were subjected to Doppler broadening measurements employing a HPGe γ–ray spectrometer. The Doppler broadening line–shape parameters (S and W) of 511 keV annihilation radiations were discussed in terms of the polymerization degree of the active components of these dosimetry films. The S- and W-parameters were found to be dependent on the active component structures of both films. A reasonable correlation was also found between the values of the S–parameter and the optical density of these radiochromic films. In addition, the Doppler broadening line–shape parameters were successfully used to provide explanation of the observed nonlinearity of these films at the end of their dynamic dose ranges. The results demonstrate the applicability of the PADB technique to probe the physical and chemical changes occurred in the active layer of the studied radiochromic films during the solid–state polymerization reaction caused by γ irradiation of different absorbed doses.     

Computer calculation of positron diffusion and annihilation in atomic hydrogen

We have performed a computer-aided analysis of position behaviour in atomic hydrogen. Effect of electric, magnetic and temperature fields on the diffusion and annihilation of positrons has been studied. Electric field is varied over a wide range of 0–200 V cm⁻¹ amagat⁻¹, magnetic field over 0–30 kG while the temperature range considered is 300–10,000°K. The position decay rate decreases with electric and temperature fields but increases with magnetic fields. However, the effect of these fields is reversed on the diffusion coefficient.     

Microstructure characterization of porous silicon as studied by positron annihilation measurements at low temperatures and high vacuum

Atomic scale properties of thin porous silicon (PSi) layers, characterized by the formation of positronium, are investigated using positron annihilation lifetime spectroscopy in the temperature range 20-300 K under 10⁻⁷ Torr vacuum. The longest orthopositronium as well as the shortest parapositronium components are found to have quite low intensities in the thin layer at room temperature. It is also found that at temperatures ≤240 K, these two components do not show up in the spectrum. The reason for this absence of the longest lifetime component is suggested.     

Defect characterization of slow-cooled and quenched samples of calcium-copper-titanate through positron annihilation spectroscopy

Abstract

Positron annihilation lifetime and Doppler-broadened gamma-ray spectra have been analyzed for slow-cooled and thermally quenched polycrystalline samples of calcium-copper-titanate. Two positron lifetimes revealing the characteristic defects in the respective samples were carefully analyzed to compare and contrast the significance of their origin and implication. A third component arising from positronium formation at the powdered particle surfaces has been considered in the analysis although its significance is lost in its very small intensity (～ 1.1–1.2%). In the quenched sample, the defect-specific long positron lifetime (τ₂) is found to larger and the mean lifetime smaller while its intensity I₂ is found drastically smaller and the concentration of defects less by an order of magnitude as compared to the slow-cooled sample. The observed changes in electrical parameters of slow-cooled and quenched samples were found to have correlations with the positron annihilation lifetime and Doppler-broadened lineshape parameters.     

Isochronal annealing studies of deformed FeSi alloys using positron annihilation spectroscopy

A series of FeSi samples were deformed to a thickness reduction of 16%. They were isochronally annealed for one hour at different temperatures and characterized by the Doppler broadening of the annihilation radiation (DBAR) measured at room temperature. Optical microscopy (OM) is used to investigate the microstructure of the deformed samples before and after annealing. The S parameter data show a decrease with the increase of the annealing temperature. At 973 K a significant decrease sets in. The microstructures of the alloys, investigated by OM, show that recrystallization is completed at 1173 K.     

Slow positron annihilation studies of vacancy-type defects in the near-surface region of Cu and Nb before and after wear

Received: 22 June 1998 / Accepted: 9 November 1998     

Studying the recovery of as-received industrial Al alloys by positron annihilation spectroscopy

Positron annihilation lifetime (PAL) spectroscopy, Doppler broadening of annihilation radiation (DBAR) spectroscopy and Vickers microhardness (Hv) measurements were performed to study the micro- and macro-structure variations during isochronal annealing from room temperature (RT) to 500 °C of commercial pure Al (1 1 0 0), Al-Mn-Mg (3 0 0 4) and Al-Mg-Si (6 2 0 1) alloys. Three annealing stages of microstructures have been identified as recovery, partial recrystallization and complete recrystallization followed by grain growth. A positive correlation between the macroscopic mechanical properties (Hv) and positron annihilation parameters has been achieved for the three samples under investigation.     

Free volumes in bulk nanocrystalline metals studied by the complementary techniques of positron annihilation and dilatometry

Free-volume type defects, such as vacancies, vacancy-agglomerates, dislocations, and grain boundaries represent a key parameter in the properties of ultrafine-grained and nanocrystalline materials. Such free-volume type defects are introduced in high excess concentration during the processes of structural refinement by severe plastic deformation. The direct method of time-differential dilatometry is applied in the present work to determine the total amount and the kinetics of free volume by measuring the irreversible length change upon annealing of bulk nanocrystalline metals (Fe, Cu, Ni) prepared by high-pressure torsion (HPT). In the case of HPT-deformed Ni and Cu, distinct substages of the length change upon linear heating occur due to the loss of grain boundaries in the wake of crystallite growth. The data on dilatometric length change can be directly related to the fast annealing of free-volume type defects studied by in situ Doppler broadening measurements performed at the high-intensity positron beam of the FRM II (Garching, Munich, Germany).     

Assessment of the correlation between mechanical testing and positron annihilation outcomes for RPV model alloys

The correlation between recent PAS results and the outcomes from mechanical testing of RPV model alloys are presented, here significant changes due to different chemical composition and different irradiation levels are observed. The influence of alloying elements to the microstructure degradation process following irradiation was identified by analysis of the mean-lifetime parameter, since an interesting interdependency of this parameter with hardness was observed.     

Effect of V K centers on positron annihilation in KCl and Ag-doped KCl

Positron lifetime spectra have been measured at 77 K for KCl and Ag-doped KCl before and after x-irradiation at 77 K and after annealing at room temperature. Radiation at 77 K reduces the intensity of the intermediate lifetime (τ₂) component. Radiation-induced defects were monitored optically and by ESR. The experiment shows that the changes observed in the positron decay are associated with the presence ofV _K centers. Work support in part by the Research Corporation. Paper C1 presented at 3rd Internat'l Conf. Positron Annihilation, Otaniemi, Finland (August 1973).     

纳米Cu固体材料的X射线衍射与正电子湮没研究

 采用自悬浮-冷压法,在不同压力下制得纳米Cu固体材料并对其在不同温度和保温时间下进行退火,利用X射线衍射(XRD)和正电子湮没寿命谱(PAS)分析对材料的结构和微观缺陷进行了表征。XRD分析表明,压制而得的样品晶粒度为20 nm,低于300 ℃退火3 h后并未发现晶粒显著长大;PAS分析表明,压制后的样品缺陷主要为单空位和空位团,大空隙很少,随着退火温度的升高和退火时间的延长,单空位通过扩散结合成空位团,大空隙也在温度较高时分解为空位团,导致空位团的含量增加,而单空位和大空隙的含量降低。     

Evolution,migration and clustering of helium-vacancy complexes in RAFM steel- depth resolved positron annihilation Doppler broadening study

Indian Reduced Activation Ferritic Martensitic steel is implanted with 130 keV helium ions to a fluence of 5 × 10¹⁴ and 1 × 10¹⁶ ions/cm² and investigated using positron annihilation spectroscopy. The samples were characterised by defect sensitive S and W-parameters using depth resolved slow positron beam. A dose dependency is observed in the nucleation and growth of helium bubbles with annealing temperature. An experimental evidence for the migration of smaller helium-vacancy complexes is observed via the variation in thickness/width of irradiated layer with temperature. The S–W plot clearly shows the regions corresponding to defect annealing, bubble nucleation and growth.