Preparation of SiC nanowires with fins by chemical vapor deposition

SiC nanowires with fins have been prepared by chemical vapor deposition in a vertical vacuum furnace by using a powder mixture of milled Si and SiO₂ and gaseous CH₄ as the raw materials. The products were characterized by field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD). These investigations confirm that the nanowires with fins are cubic β-SiC. The diameter of the fins is about 100–120 nm and the diameter of the inner core stems is about 60–70 nm. The formation process of the β-SiC nanowires with fins is analyzed and discussed briefly.     

Formation of Si nanowires by the electrochemical reduction of porous Ni/SiO2 blocks in molten CaCl2

Silicon nanowires (SiNWs) were prepared by the electrochemical reduction of solid Ni/SiO₂ blocks in molten CaCl₂ at 1173 K. The SiNWs have diameter distributions ranging from 80 to 350 nm, and the nickel–silicon droplets are found on the tips of the nanowires. The growth mechanism of SiNWs was investigated, which confirmed that the nano-sized nickel–silicon droplets formed at the Ni/SiO₂/CaCl₂ three-phase interline. The droplets lead to the oriented growth of SiNWs. Formation of nano-sized nickel–silicon droplets suggests that this method could be a potential way to produce nano-sized metal silicides.     

Spectroscopic studies of the structural properties of Ni substituted spinel LiMn2O4

Microstructure and local structure of spinel LiNi_xMn_2 − xO₄ (x = 0, 0.1 and 0.2) were studied using X-ray diffraction (XRD) and a combination of X-ray photoelectron spectroscopy (XPS), X-ray absorption near edge spectroscopy (XANES) and Raman scattering with the aim of getting a clear picture of the local structure of the materials responsible for the structural stability of LiNi_xMn_2 − xO₄. XRD study showed that Ni substitution caused the changes of the materials’ microstructure from the view of the lattice parameter, mean crystallite size, and microstrain. XPS and XANES studies showed the Ni oxidation state in LiNi_xMn_2 − xO₄ was larger than + 2, and the Mn oxidation state increased with Ni substitution. The decrease of the intensity of the 1s → 4p_z shakedown transition on the XANES spectra indicated that Ni substitution suppressed the tetragonal distortion of the [MnO₆] octahedron. The Mn(Ni)–O bond in LiNi_xMn_2 − xO₄, which is stronger than the Mn–O bond in LiMn₂O₄ was responsible for the blue shift of the A_1g Raman mode and could enhance the structural stability of the [Mn(Ni)O₆] octahedron.     

Structural and magnetic properties of HCP-CoCrPt–SiO2 granular media

Granular HCP-(CoCrPt)_100−x(SiO₂)_x thin films with Cr underlayers have been fabricated by sputtering multilayers followed by post-deposition annealing. Magnetic and structural properties of the films for potential applications in magnetic recording media have been investigated in detail. In as-deposited films coercivities exceeding 2.5 kOe have been obtained with SiO₂ varying from 8 to 16 vol%; high coercivity of 5.6 kOe and anisotropy of 4.6×10⁶ erg/cm³ have been achieved at low M_rt value (about 0.4 memu/cm²) in the post-annealed films. VSM measurements showed that the magnetic moment lies well in the film plane under proper preparation conditions. Grain isolation in the magnetic layer was improved by segregating SiO₂ into grain boundaries and further enhanced by post-deposition annealing. The rapid increase of the coercivity upon annealing is most likely due to the significant decrease in intergranular exchange coupling, as shown by the δM measurement in which the peak value of δM curves changed from a positive value to a negative value upon annealing. Magnetic reversal properties of the films have also been systematically studied. These results show that the HCP-CoCrPt–SiO₂ granular film is a promising candidate for ultra-high-density recording media up to 100 Gbit/in² or beyond because of its low Pt content and desirable properties.     

Sonochemical preparation of SbS1−xSexI nanowires

A sonochemical method for direct preparation of nanowires of SbS_1?xSe_xI solid solution has been established. The SbS_1?xSe_xI gel was synthesized using elemental Sb, S, Se and I in the presence of ethanol under ultrasonic irradiation (35 kHz, 2 W/cm²) at 50 °C for 2 h. The product was characterized by using techniques such as powder X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, energy dispersive X-ray analysis, selected area electron diffraction, and optical diffuse reflection spectroscopy. The SEM and HRTEM investigations exhibit that the as-prepared samples are made up of large quantity nanowires with lateral dimensions of about 10–50 nm and lengths reaching up to several micrometers and single-crystalline in nature. The increase of molar composition of Se affects linear decrease of the indirect forbidden optical energy gap as well as the distance between (121) planes of the SbS_1?xSe_xI nanowires.     

Investigation of thermal sensitivity and radiation resistance of SiOx〈Ti〉 metal-dielectric films

In this investigation the composite SiO_x〈Ti〉 films were prepared by the thermal evaporation of a mixture of silicon oxide (SiO₂) and Тi powders. The optical transmission of the films in the IR spectral range and their temperature-sensitive properties are studied. By varying the contents of the metal in vaporizer and time of evaporation it is possible to obtain SiO_x〈Ti〉 layers with resistance (for monopixel of 0.8 × 1 mm) from tens kOhms to MOhms and a value of the temperature coefficient of resistance (TCR) is equal to −2.22% K⁻¹. IR spectrum of SiO_x〈Ti〉 film is characterized by a broad absorption band in the range of 8–12 μm which is associated with the Si–O–Si stretching mode.Investigations of the effect of gamma irradiation on SiO_x〈Ti〉 films have shown that their temperature-sensitive properties, in particular TCR does not change up to a dose of 10⁶ Gy.These results suggest that SiO_x〈Ti〉 films can be used as materials for production of radiation-resistant thermosensitive detectors operated in radiation fields of γ-radiation and combining functions of IR-absorption and formation of an electric signal.     

Surface modification of Ni and Co metal nanowires through MeV high energy ion irradiation

Nickel (Ni) and cobalt (Co) metal nanowires were fabricated by using an electrochemical deposition method based on an anodic alumina oxide (Al₂O₃) nanoporous template. The electrolyte consisted of NiSO₄ · 6H₂O and H₃BO₃ in distilled water for the fabrication of Ni nanowires, and of CoSO₄ · 7H₂O with H₃BO₃ in distilled water for the fabrication of the Co ones. From SEM and TEM images, the diameter and length of both the Ni and Co nanowires were measured to be ∼ 200 nm and 5–10 μm, respectively. We observed the oxidation layers in nanometer scale on the surface of the Ni and Co nanowires through HR–TEM images. The 3 MeV Cl²⁺ ions were irradiated onto the Ni and Co nanowires with a dose of 1 × 10¹⁵ ions/cm². The surface morphologies of the pristine and the 3 MeV Cl²⁺ ion-irradiated Ni and Co nanowires were compared by means of SEM, AFM, and HR–TEM experiments. The atomic concentrations of the pristine and the 3 MeV Cl²⁺ ion-irradiated Ni and Co nanowires were investigated through XPS experiments. From the results of the HR–TEM and XPS experiments, we observed that the oxidation layers on the surface of the Ni and Co nanowires were reduced through 3 MeV Cl²⁺ ion irradiation.     

Effect of Eu3+ concentration on microstructure and photoluminescence of Sr2SiO4:Eu3+ phosphors prepared by microwave assisted sintering

In this paper, effect of Eu³⁺ doping concentrations on microstructure and photoluminescence of Sr₂SiO₄ phosphors was investigated. The Sr_2?xSiO₄:xEu³⁺ phosphors with x=0.05, 0.1, 0.2, 0.3 were synthesized by microwave assisted sintering at 1200 °C for 60 min in air. X-ray powder diffraction analysis confirmed the formation of pure Sr₂SiO₄ phase without second phase or phases of starting materials irrespective of the adding amount of Eu³⁺. From scanning electron microscopy image, it is found that with more Eu³⁺ ions introduced to Sr₂SiO₄, the shape of the particles is not much different from each other, but the particle size decreases significantly from 1 to 2 μm (when x=0.05) to less than 500 nm (when x=0.3). The emission spectrum was located obviously at 617 nm as the excitation spectrum at λ_ex=395 nm, and it had best emission intensity when x=0.1.     

Effect of Fe doping on the room temperature ferromagnetism in chemically synthesized (In1−xFex)2O3 (0 ⩽ x ⩽ 0.07) magnetic semiconductors

Observation of room temperature ferromagnetism in Fe doped In₂O₃ samples (In_1−xFe_x)₂O₃ (0 ⩽ x ⩽ 0.07) prepared by co-precipitation technique is reported. Lattice parameter obtained from powder X software shows distinct shrinkage of the lattice constant indicating an actual incorporation of Fe ions into the In₂O₃ lattice. X-ray diffraction data measurements show that the entire sample exhibits single phase polycrystalline behavior. SEM micrographs showed the prepared powder was in the range 25–36 nm. SEM EDS mapping showed the presence of Fe and In ions in the Fe doped In₂O₃ sample. The highest remanence magnetization moment (6.624 × 10⁻⁴ emu/g) is reached in the sample with x = 0.03.     

A comparative study of different concentrations of pure Zn powder effects on synthesis,structure, magnetic and microwave-absorbing properties in mechanically-alloyed Ni–Zn ferrite

In this study, a powder mixture of Zn, Fe₂O₃ and NiO was used to produce different compositions of Ni_1−xZn_xFe₂O₄ (x=0.36, 0.5 and 0.64) nanopowders. High-energy ball milling with a subsequent heat treatment method was carried out. The XRD results indicated that for the content of Zn, x=0.64 a single phase of Ni–Zn ferrite was produced after 30 h milling while for the contents of Zn, x=0.36 and 0.5, the desired ferrite was formed after sintering the 30 h-milled powders at 500 °C. The average crystallite size decreased with increase in the Zn content. A DC electrical resistivity of the Ni–Zn ferrite, however, decreased with increase in the Zn content, its value was much higher than those samples prepared by the conventional ceramic route by using ZnO instead of Zn. This is attributed to smaller grains size which were obtained by using Zn. The FT-IR results suggested two absorption bands for octahedral and tetrahedral sites in the range of 350–700 cm⁻¹. The VSM results revealed that by increasing the Zn content from 0.36 to 0.5, a saturation magnetization reached its maximum value; afterwards, a decrease was observed for Zn with x=0.64. Finally, magnetic permeability and dielectric permittivity were studied by using vector network analyzer to explore microwave-absorbing properties in X-band frequency. The minimum reflection loss value obtained for Ni_0.5Zn_0.5Fe₂O₄ samples, about −34 dB at 9.7 GHz, making them the best candidates for high frequency applications.     

Magnetic behaviour of arrays of Ni nanowires by electrodeposition into self-aligned titania nanotubes

Arrays of Ni nanowires electrodeposited into self-aligned and randomly disordered titania nanotube arrays grown by anodization process are investigated by X-ray diffraction, SEM, rf-GDOES and VSM magnetometry. The titania nanotube outer diameter is about 160 nm, wall thickness ranging from 60 to 70 nm and 300 nm in depth. The so-obtained Ni nanowires reach above 100 nm diameter and 240 nm length, giving rise to coercive fields of 98 and 200 Oe in the perpendicular or parallel to the nanowires axis hysteresis loops, respectively. The formation of magnetic vortex domain states is also discussed.     

Transport and magnetic properties of bulk polycrystalline (YBa2Cu3O7)1−x(Nd0.7Sr0.3MnO3)x nanocomposites

We have prepared a series of bulk polycrystalline samples with the nominal compositions (YBa₂Cu₃O₇)_1?x(Nd_0.7Sr_0.3MnO₃)_x (x = 0–1) by a conventional solid-state reaction method using the larger difference in sintering temperature of the two constituent oxides and a well conceived sintering sequence. XRD patterns show that the samples are composites consisting of YBa₂Cu₃O₇ and Nd_0.7Sr_0.3MnO₃ particles with average grain size of ～65 nm. For x ? 0.55, with increasing x, the zero-resistance superconducting transition temperature, T_C0, measured at zero magnetic field decreases and the normal state resistivity increases rapidly. The T_C0 for the sample with x ～ 0.48 is estimated to be 0 K. The M–H hysteresis loops indicate the coexistence of ferromagnetism and superconductivity in the samples. The depression of T_C0 can be attributed to the proximity effect between ferromagnetism and superconductivity.     

Exploring the role of samarium in the modification of rhodium catalysts through surface science approach

In this paper we review the preparation and reaction properties of ordered SmRh surface alloys and SmO_x/Rh(1 0 0) model catalyst which have been systematically investigated by low energy electron diffraction (LEED), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), high-resolution electron energy loss spectroscopy (HREELS) and temperature desorption spectroscopy (TDS). The growth of Sm on Rh(1 0 0) at room temperature follows the Stranski-Krastanov mode. Thermal treatment of the Sm films on Rh(1 0 0) leads to the formation of ordered SmRh surface alloys. An “inverse” SmO_x/Rh(1 0 0) model catalyst is produced under controlled oxidation of the SmRh surface alloy. CO adsorption on the SmRh alloy and SmO_x/Rh(1 0 0) surfaces gives rise to five TDS characteristic features originating from different adsorption sites. Both the site blocking of SmO_x and the electron transfer between SmO_x and Rh substrate significantly affect the CO adsorption. Acetate decomposition on both Rh(1 0 0) and the SmO_x/Rh(1 0 0) surfaces are found to undergo two competitive pathways that yields either (i) CO(a) and O(a) or (ii) CO₂(g) and H₂(g) at high temperature. The reactive desorption of acetic acid on SmO_x/Rh(1 0 0) is dramatically different from that on Rh(1 0 0). A rapid decomposition of acetic acid to produce CO(g) and CO₂(g) can be observed only on SmO_x/Rh(1 0 0), where CO(g) becomes the predominant product at 225 K, indicating a strong promotional effect of SmO_x in the selective decomposition of acetate. Finally, we briefly describe the future outlook of research on rare earth oxide/metal model catalysts.     

Microwave-induced combustion synthesis of Ni–Zn ferrite powder and its characterization

Ni–Zn ferrite powders were successfully synthesized by microwave-induced combustion process. The process takes only a few minutes to obtain calcined Ni–Zn ferrite powders. The resultant powders were investigated by XRD, SEM, VSM, TG/DTA and surface area measurements. The as-received product shows the formation of cubic ferrite with saturation magnetization (M_s)≈23 emu/g, whereas upon annealing at 850°C for 4 h, the saturation magnetization (M_s) increased to ≈52 emu/g.     

Effects of Ni and Co doping on the physical properties of tetragonal FeSe0.5Te0.5 superconductor

Isoelectronic Tellurium (Te) substitution for Selenium (Se) in the tetragonal phase of FeSe (β-FeSe) increases the superconducting transition temperature (T_c) by applying a negative pressure on the lattice. However, the normal state resistivity increases and shows semi-metallic behavior for samples with higher Te concentration. With increasing Te concentration, the T_c increases and reaches a maximum for FeSe_0.5Te_0.5 and then decreases with further increase of Te. We have investigated the effect of Cobalt (Co) and Nickel (Ni) doping in FeSe_0.5Te_0.5 in the nominal composition range Fe_1?xTM_xSe_0.5Te_0.5 (TM = Co (x = 0.05, 0.1, 0.15, 0.2) and Ni (x = 0.05, 0.1)). Both Co and Ni doping suppress T_c and drives the system to metal–insulator transition. The in-plane (‘a’) and out-of-plane (‘c’) lattice constants decrease with increasing dopant concentration.     

Radiation-stimulated modification of C60 films on Si-oxide surfaces

The electronic structure of C₆₀/SiO_x/Si(1 0 0) interface was studied by photoemission (valence-bands, C 1s, and Si 2p core levels) and near-edge X-ray absorption fine structure (C 1s threshold) spectroscopies. It was concluded that the SiO_x/Si surface is non-reactive with respect to the interaction with C₆₀. The exposure of the C₆₀/SiO_x/Si system under non-monochromatic synchrotron radiation causes modification of the electronic structure of this system. It is explained by polymerization of the C₆₀ molecules and arising a strong ionic-like interaction of the polymerized C₆₀ with the SiO_x surface. Annealing of this system up to temperatures of 550–625 °C leads to complete desorption of the C₆₀ molecules from the non-irradiated sample areas while the modified by radiation fullerenes remain attached to the substrate.     

Growth mode of Pt1−xNix films biased dc-sputter-deposited on MgO(0 0 1)

A study is made by TEM, XRD and by measuring electrical/magnetic properties, of growth mode and properties of Pt_1−xNi_x alloy films deposited on MgO(0 0 1) at 250°C by dc-sputtering at 2.5–2.7 kV in Ar. A bias voltage V_s≤−160 V was applied to the substrate during deposition. It was confirmed that the Pt film was polycrystalline with the texture of Pt(1 1 1)/MgO(0 0 1) while the films of Pt_0.14Ni_0.86 and Pt_0.19Ni_0.81 were epitaxially grown with Pt–Ni(0 0 1)[1 0 0]/MgO(0 0 1)[1 0 0] similarly to the case of Ni/MgO(0 0 1). Thus the growth mode transformation between Pt–Ni(1 1 1)/MgO(0 0 1) and Pt–Ni(0 0 1)/MgO(0 0 1) may be induced at x less than 0.81 for Pt_1−xNi_x alloy films. The temperature coefficient of resistance TCR from 100 to 300 K of Pt_0.14Ni_0.86 films was estimated to be 0.0044–0.0053 K⁻¹ and saturation magnetization at 300 K to be 1.7–3.2 kG, respectively, while TCR of Pt films was estimated to be 0.0035–0.0048 K⁻¹.     

Modified Lanthanum Zirconium Oxide buffer layers for low-cost,high performance YBCO coated conductors

The pyrochlore Lanthanum Zirconium Oxide, La₂Zr₂O₇ (LZO), has been developed as a potential replacement barrier layer in the standard RABiTS three-layer architecture of physical vapor deposited CeO₂ cap/YSZ barrier/Y₂O₃ seed on Ni–5%W metal tape. The main focus of this research is to ascertain whether: (i) we can further improve the barrier properties of LZO; (ii) we can modify the LZO cation ratio and still achieve a high level of performance; and (iii) it is possible to reduce the number of buffer layers. We report a systematic investigation of the LZO film growth with varying compositions of La:Zr ratio in the La₂O₃–ZrO₂ system. Using a metal–organic deposition (MOD) process, we have grown smooth, crack-free, epitaxial thin films of La_xZr_1?xO_y (x = 0.2–0.6) on standard Y₂O₃ buffered Ni–5W substrates in short lengths. Detailed XRD studies indicate that a single epitaxial LZO phase with only (0 0 1) texture can be achieved in a broad compositional range of x = 0.2–0.6 in La_xZr_1?xO_y. Both CeO₂ cap layers and MOD–YBCO films were grown epitaxially on these modified LZO barriers. High critical currents per unit width, I_c of 274–292 A/cm at 77 K and self-field were achieved for MOD–YBCO films grown on La_xZr_1?xO_y (x = 0.4–0.6) films. These results indicate that LZO films can be grown with a broad compositional range and still support high performance YBCO coated conductors. In addition, epitaxial MOD La_xZr_1?xO_y (x = 0.25) films were grown directly on biaxially textured Ni–3W substrates. About 3 μm thick YBCO films grown on a single MOD–LZO buffered Ni–3W substrates using pulsed laser deposition show a critical current density, J_c, of 0.55 MA/cm² (I_c of 169 A/cm) at 77 K and 0.01 T. This work holds promise for a route for producing simplified buffer architecture for RABiTS based YBCO coated conductors.     

Structure,optical, and magnetic properties of rutile Sn1−xMnxO2 thin films

Sn_1?xMn_xO₂ (x ≤ 0.11) thin films were fabricated by sol–gel and spin-coated method on Si (1 1 1) substrate. X-ray diffraction revealed that single-phase rutile polycrystalline structure was obtained for x up to about 0.078. Evolution of the lattice parameters and X-ray photoelectron spectroscopy studies confirmed the incorporation of Mn³⁺ cations into rutile SnO₂ lattice. Optical transmission studies show that the band gap energy (E_g) broadens with the increasing of Mn content. Magnetic measurements revealed that all samples exhibit room temperature ferromagnetism (RTFM), which is identified as an intrinsic characteristic. Interestingly, the magnetic moment per Mn atom decreases with the increasing Mn content. The origin of RTFM can be interpreted in terms of the bound magnetic polaron model.     

Anomalous Zn- and Ni-substitution effects on superconductivity in the superconducting weak ferromagnets RuSr2RCu2O8 (R = Gd,Eu)

The effect of magnetic Ni and non-magnetic Zn impurities on superconducting transition temperature T_c in RuSr₂R(Cu_1?x(Ni, Zn)_x)₂O₈ with R = Gd or Eu (Ni- and Zn-substituted Ru1212Gd(Eu)) was extensively studied. It is found that the suppression rate dT_c/dx of RuSr₂R(Cu_1?x(Ni, Zn)_x)₂O₈ is comparable to that of underdoped YBa₂(Cu_1?x(Ni, Zn)_x)₃O_7?δ. The suppression of superconductivity in Ni-substituted Ru1212Eu samples is more significant than that in Zn-substituted ones, indicative of Ni being a more effective pair-breaker than Zn. In strong contrast, the magnetic Ni impurity atoms have a weaker effect on superconductivity than non-magnetic Zn atoms in Ru1212Gd, similar to what was observed in the high-T_c cuprates. These intriguing findings strongly suggest that the impurity-induced local disturbance of the 3d-spin correlation at Cu sites around Ni/Zn is distinctly different between Ru1212Gd and Ru1212Eu.