Terahertz dual-wavelength quantum cascade laser based on GaN active region

In this paper a novel terahertz (THz) quantum cascade laser (QCL) based on GaN/AlGaN quantum wells has been proposed, which emits at two widely separated wavelengths 33 and 52 μm simultaneously in a single active region. The large LO-phonon energy (～90 meV), the ultrafast resonant phonon depopulation of the lower radiative levels, suppression of the electrons that escape to the continuum states and selective carrier injection and extraction all together lead to a considerable enhancement in the operating temperature of the structure. All calculations have been done at a temperature of 265 K. Moreover, similar behavior of the output optical powers is another remarkable feature, which makes both wavelengths useful for special applications.     

Ternary effects on the optical interface phonons in onion-like GaN/AlxGa1 − xN quantum dots

The interface optical phonons and its ternary effects in onion-like quantum dots are studied by using dielectric continuum model and the modified random-element isodisplacement model. The dispersion relations, the electron–phonon interactions and ternary effects on the interface optical phonons are calculated in the GaN/Al_xGa_1 − xN onion-like quantum dots. The results show that aluminium concentration has important influence on the interface optical phonons and electron–phonon interactions in GaN/Al_xGa_1 − xN onion-like quantum dots. The frequencies of interface optical phonons and electron–phonon coupling strengths change linearly with increase of aluminium concentration in high frequency range, and do not change linearly with increasing aluminium concentration in low frequency range.     

The static and dynamic screening of power loss of a two-dimensional electron gas

Experimental results concerning the well-width dependence of the acoustic-phonon-assisted energy relaxation of a two-dimensional electron gas in GaAs/Ga_1 − xAl_xAs quantum-well structures are compared with theoretical models that involve piezoelectric and deformation-potential scattering and the effects of static and dynamic screening of the electron–acoustic phonon interaction. It is shown that screening only slightly modifies the predictions of the approximate calculations.     

Raman scattering from confined phonons in GaAs/AlGaAs quantum wires

We report on photoluminescence and Raman scattering performed at low temperature (T =  10 K) on GaAs/Al_0.3Ga_0.7As quantum-well wires with effective wire widths ofL =  100.0 and 10.9 nm prepared by molecular beam epitaxial growth followed by holographic patterning, reactive ion etching, and anodic thinning. We find evidence for the existence of longitudinal optical phonon modes confined to the GaAs quantum wire. The observed frequency at ο_L10 =  285.6 cm⁻¹forL =  11.0 nm is in good agreement with that calculated on the basis of the dispersive dielectric continuum theory of Enderleinas applied to the GaAs/Al_0.3Ga_0.7As system. Our results indicate the high crystalline quality of the quantum-well wires fabricated using these techniques.     

Si-delta doping and spacer thickness effects on the electronic properties in Si-delta-doped AlGaAs/GaAs HEMT structures

In this work, we investigate the effect of the δ-Si doping on the barrier and the spacer thickness on the electronic properties of AlGaAs/GaAs HEMTs structures grown by molecular beam epitaxy on (1 0 0) oriented GaAs substrates. Photoluminescence measurements as function of the temperature are used to determine the relaxation processes of the electron and the hole in the channel. The photoluminescence characterizations of Si-delta-doped AlGaAs/GaAs HEMTs structures have been studied in the 10–300 K temperature range. Low temperature PL spectra show the optical transition (E_e–h) that occurs between the fundamental states of electrons to holes in the GaAs channel. Increase of the Si-δ-doping density and decrease of the spacer width improve the two-dimensional electron gas confinement and decrease defects densities in the canal. The band structure of Si-delta-doped AlGaAs/GaAs HEMTs structures at T = 10 K has been studied theoretically using the finite differences method to self-consistently and simultaneously solve Schrödinger and Poisson equations written within the Hartree approximation.     

Spatially varying effective mass effects on energy level populations in semiconductor quantum devices

For the analysis and design of semiconductor intersubband devices, accurate values for the Fermi energy and the subband electron population are needed. The effect of the position-dependent electron effective massm ^*  (z) is commonly neglected in the determination of these two intersubband device parameters. This approach is nearly valid for single-well devices in the GaAs/Al _xGa_1 − x As material system. However, in multiple-coupled-well devices, the variable nature of the effective mass must be taken into account. In material systems other than the ones based on GaAs, failure to include the position-dependence of the electron mass may give rise to significant errors in the values of the Fermi energy and other device parameters such as the intersubband absorption coefficient. In this paper, the effects ofm ^*  (z) on the Fermi level and the intersubband charge distribution are explored and quantified.Theoretical formulation for the intersubband Fermi energy and the subband electron distribution, with the inclusion of position-dependent electron mass, is presented. The eigenenergies of the intersubband structures are obtained by solving the single-band effective-mass Schroedinger equation using the argument principle method. The electron distribution and the Fermi energy are calculated using both the approximate method ( m₀ ^* ) and the rigorous formulation [ m ^* (z)], and the relative differences in the corresponding values are presented. It is demonstrated that these differences are small in the GaAs/Al _xGa_1 − x As material system, but can become very significant in other materials. In addition, the variable nature of carrier effective mass plays an important role in other types of devices such as interband quantum well photodetectors and lasers that employ optical transitions between the valence and the conduction bands. Electronic devices such as the resonant tunneling diode are also affected by the position-dependence of carrier mass and thus the results are applicable to both optoelectronic and electronic quantum devices.     

Optical nutation in a magnetized semiconductor quantum well structure

Using the semiclassical coherent radiation—semiconductor interaction model, optical nutation has been analysed in aGaAs / Al_xGa_1 − xAs quantum well structure (QWS) assumed to be immersed in a moderately strong magnetic field and irradiated by a not-too-strong near band gap resonant femtosecond pulsed Ti–sapphire laser. The finite potential well depth of the QWS and the Wannier–Mott excitonic structure of the crystal absorption edge is taken into account. The excitation intensity is assumed to be below the Mott transition where the various many-body effects have been neglected with adequate reasoning. Numerical analysis made for a GaAs quantum well of thickness  ∼  100 Åand the confining layers ofAl_xGa_1 − xAs withx =  0.3 at intensity I ≤  5  ×  10⁶Wcm ^− 2reveals that the real and imaginary parts of the transient complex-induced polarization are enhanced with an increase in the magnetic field and their ringing behaviour confirms the occurrence of optical nutation in the QWS.     

IR-induced features of AgGaGeS4 crystalline semiconductors

Complex investigations of the photoconductivity and photoinduced absorption together with the piezoelectric features were performed for the AgGaGeS₄ semiconducting single crystals under the influence of 3.5 μs CO₂ (80 mJ) pulsed laser emitting at 10.6 μm. These crystals are transparent in the wide spectral range 0.4–17 μm, which allows operating due to their properties in the spectral range covering the excitation of the phonons and electron subsystem. The piezoelectric properties show substantial increment during illumination by microsecond CO₂ laser and irreversible relaxation after swathing off the laser excitation. The temperature dependent studies of absorption and photoconductivity confirm the main role of intrinsic defects forming the tails of electronic states below the bottom of conduction band gap. Principal role of IR-induced electron–phonon interactions in the observed changes of the piezoelectricity is demonstrated.     

Investigation of carrier scattering mechanisms in n-Cd1−xMgxSe single crystals using Fourier Transform Infrared Spectroscopy

This paper presents results of investigations of carrier scattering mechanisms in n-Cd_1−xMg_xSe mixed crystals with magnesium content varying from x = 0 to x = 0.33. Experimental results obtained by means of the Fourier Transform Infrared Spectroscopy (FT-IR) and Hall measurements are discussed in the frame of the Drude and the quantum theories. The character of the wavelength dependence of the optical absorption coefficient in investigated crystals was found to be of the type ∼λ^p, where 2 < p < 3.5. The p = 2 is expected from the Drude theory and the relaxation time approximation. The obtained experimental values of p parameter suggest that the optical phonon and impurity scattering mechanisms are dominating scattering mechanisms in these crystals. The calculated carrier concentration from optical absorption spectrum for a n-CdSe crystal is in a good agreement with this obtained from Hall measurement.     

Tailoring electron–phonon interaction in nanostructures

Efficient design of optoelectronic devices based on electron intersubband transitions depends critically on the knowledge of the intersubband relaxation times which in turn, depends on electron scattering with LO and acoustic phonons. In this article the intersubband scattering time associated with electron–acoustic-phonon interaction has been discussed in terms of phonon mode quantization and phonon confinement with describing the acoustic phonon dispersion relation in detail by introducing the cut-off frequency for each mode. It has been shown that the quantization of acoustic phonon modes lead to an enhancement in electron–phonon scattering time in AlGaAs quantum well structures. Based on the presented model, a new tailoring method has presented to adjust the electron–phonon scattering time in intersubband-transition-based structures while keeping the electronic properties unaltered. Also, we illustrated that for a quantum well with subband energy separation of ∼30 meV, the intersubband scattering time with acoustic-phonon-assisted transitions could be tailored from ∼120 ps to increased value of ∼400 ps or reduced value of ∼45 ps by inserting a 1 nm-thickacoustically soft or hard layers, respectively, while keeping the same the initial energy separation.     

Ultrafast relaxation of hot optical phonons in monolayer and multilayer graphene on different substrates

Hot carrier cooling in few-layer and multilayer epitaxial graphene on SiC, and chemical vapor deposition (CVD) grown graphene transferred onto a glass substrate was investigated by transient absorption spectroscopy and imaging. Coupling to the substrate was found to play a critical role in charge carrier cooling. For both multilayer epitaxial graphene and monolayer CVD graphene, charge carriers transfer heat predominantly to intrinsic in-plane optical phonons of graphene. At high pump intensity, a significant number of optical phonons are accumulated, and the optical phonon lifetime presents a bottleneck for charge carrier cooling. This hot phonon effect did not occur in few-layer epitaxial graphene because of strong coupling to the substrate, which provided additional cooling channels. The limiting charge carrier lifetimes at high excitation densities were 1.8 ± 0.1 ps and 1.4 ± 0.1 ps for multilayer epitaxial graphene and monolayer CVD graphene, respectively. These values represent lower limits on the optical phonon lifetime for the graphene samples.     

Theoretical ultraslow bright and dark optical solitons in cascade-type GaAs/AlGaAs multiple quantum wells

We show the formation of ultraslow bright and dark optical solitons in a cascade-type three-level system of GaAs/AlGaAs multiple quantum wells (MQWs) structure based on the biexciton coherence in the transient optical response, and study analytically and numerically with Maxwell–Schrödinger equations. The calculated velocity of bright and dark optical solitons are V_g = 2.7 × 10⁴ ms^? 1 and V_g = 8.91 × 10⁴ ms^? 1, respectively. Such investigation of ultraslow optical solitons in MQWs may provide practical applications such as high-fidelity optical delay lines and optical buffers in semiconductor quantum wells structure, because of its flexible design.     

Frequency dependent optical and dielectric properties of zinc sulfide in Terahertz regime

Frequency dependent optical and dielectric properties for several grades of chemical vapor deposited (CVD) zinc sulfide (standard, elemental, and multi-spectral) was performed using a terahertz time-domain spectroscopy (THz-TDS) system in the frequency range from 0.15 THz to 2.5 THz. Zinc sulfide exhibits low frequency vibrational modes characterized by the THz-TDS. Two low-frequency phonon resonance lines were revealed at 0.78 THz and 2.20 THz. These samples were also characterized in the GHz range using a backward wave oscillator (BWO) source quasi-optical spectrometer, and the data obtained by both approaches were compared. Experimental data were also compared with an undamped harmonic oscillator model. These results compare well with the literature values obtained using other methods.     

Cross-shaped metal–semiconductor–metal plasmonic crystal for terahertz modulator

The transmission and tuning properties of a cross-shaped plasmonic crystal based on periodic metal–semiconductor–metal (MSM) structures have been investigated in the terahertz (THz) regime. According to the mode analysis, we find that the different resonance modes in the plasmonic crystal show the different changes when this device is actively controlled by the carrier injection of the MSM structures. The longitudinal modes disappear, while the horizontal mode moves to a higher frequency. The former leads to an intensity modulation at 0.5 THz and 1.1 THz when the groove depth h = 60 μm, and the later leads to a band blue-shift from 1.325 THz to 1.38 THz. These results will be applied to THz modulation and tunable filtering.     

Binding energies of excitons in symmetric and asymmetric quantum wells in a magnetic field

The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga_1 − xAl_xAs quantum wells is calculated with the use of a variational approach. Results have been obtained as a function of the potential symmetry, and the size of the quantum well in the presence of an arbitrary magnetic field. The applied magnetic field is taken to be parallel to the axis of growth of the quantum well structure. The role of the asymmetric barriers, magnetic field, and well width in the excitonic binding is discussed as the tunability parameters of the GaAs/Ga_1 − xAl_xAs system.     

Wide-field imaging using a tunable terahertz free electron laser and a thermal image plate

The appearance of intense terahertz sources such as quantum cascade laser and free electron laser opens up new opportunities for 2D imaging. Though microbolometer and pyroelectric arrays are promising recorders, they are of small size and cannot be used when wide-field imaging in the longwave region is required. We applied for terahertz imaging 3″ × 3″ and 6″ × 6″ Macken Instruments Inc. “thermal image plates”, a set of thermal sensitive phosphor screens operating in a room temperature environment. The Novosibirsk free electron laser was used as a source of radiation. We have found that the response of thermal image plate is linear until the relative quenching is less than 60% of the initial luminescence intensity. The response curve follows the Seitz–Mott law. The threshold sensitivity was found to be 100 mW/cm² at 1.5 THz and 40 mW/cm² at 2.3 THz. Interferograms, holograms, and terahertz beam spatial distributions recorded in the spectral range of 1.2–2.5 THz are given as examples.     

Improvement of stability and pulse energy in a diode-pumped dual-loss-modulated QML Nd:Lu0.2Y0.8VO4 laser with EO modulator and GaAs

The Q-switched and mode-locked (QML) performance in a diode-pumped Nd:Lu_0.2Y_0.8VO₄ laser with electro-optic (EO) modulator and GaAs saturaber absorber is investigated. In comparison with the solely passively QML laser with GaAs, the dual-loss-modulated QML laser with EO and GaAs can generate pulses with higher stability and shorter pulse width of Q-switched envelope, as well as higher pulse energy. At the repetition rate 1 kHz of EO, the pulse width of Q-switched pulse envelope has a compression of 89% and the pulse energy has an improvement of 24 times. The QML laser characteristics such as the pulse width, pulse peak power etc. have been measured for different small-signal transmittance (T₀) of GaAs, different reflectivity (R) of output coupler and modulation frequencies of the EO modulator (f_e). The highest peak power and the shortest pulse width of mode-locked pulses are obtained at f_e = 1 kHz, R = 90% and T₀ = 92.6%. By considering the influences of EO modulator, a developed rate equation model for the dual-loss-modulated QML laser with EO modulator and GaAs is proposed. The numerical solutions of the equations are in good agreement with the experimental results.     

10 Gb/s optical carrier distributed network with W-band (0.1 THz) short-reach wireless communication system

Millimeter-wave (mm-wave) operated in W-band (75 GHz–0.11 THz) is of particular interests, since this frequency band can carry signals at much higher data rates. We demonstrate a 10 Gb/s optical carrier-distributed network with the wireless communication system. The mm-wave signal at carrier frequency of 0.1 THz is generated by a high speed near-ballistic uni-traveling carrier photodiode (NBUTC-PD) based transmitter (Tx), which is optically excited by optical short pulses. The optical pulse source is produced from a self-developed photonic mm-wave waveform generator (PMWG), which allows spectral line-by-line pulse shaping. Hence these optical pulses have high tolerance to fiber chromatic dispersion. The W-band 10 Gb/s wireless data is transmitted and received via a pair of horn antennas. The received 10 Gb/s data is envelope-detected and then used to drive an optical modulator at the remote antenna unit (RAU) to produce the upstream signal sending back to the central office (CO). 20 km single mode fiber (SMF) error free transmission is achieved. Analysis about the optimum repetition rate of the optical pulse source and the transmission performance of the upstream signal are also performed and discussed.     

Quantum dot p-i-n structure in an electric field

Time-resolved photoluminescence (PL), steady-state PL, and electroluminescence (EL) techniques have been used to characterize the carrier relaxation processes and carrier escape mechanisms in self-assembled InAs/GaAs quantum dot (SAQD) p-i-n structures under reverse bias. The measurements were performed between 5 K and room temperature on a ring mesa sample as a function of bias. At 100 K, the PL decay time originating from the n  =  1 SAQD decreases with increasing reverse bias from ∼3 ns under flat band condition to∼ 400 ps for a bias of −3 V. The data can be explained by a simple model based on electron recombination in the quantum dots (QDs) or escape out of the dots. The escape can occur by one of three possible routes: direct tunneling out of the distribution of excited electronic levels, thermally assisted tunneling of ground state electrons through the upper excited electronic states or thermionic emission to the wetting layer.