Origin of the generally defined absorption edge of non-stoichiometric lithium niobate crystals

The ultraviolet absorption edges of LiNbO₃ crystals with different Li₂O contents and MgO doping concentrations were investigated. The generally defined absorption edges at absorption coefficient α=15 or 20 cm⁻¹ of all these crystals fit the Urbach rule perfectly. The origin of this absorption edges in non-stoichiometric LiNbO₃ crystals is attributed to the presence of Li vacancies.     

Structural and electronic properties of boron-doped double-walled silicon carbide nanotubes

The effects of boron doping on the structural and electronic properties of (6,0)@(14,0) double-walled silicon carbide nanotube (DWSiCNT) are investigated by using spin-polarized density functional theory. It is found that boron atom could be more easily doped in the inner tube. Our calculations indicate that a Si site is favorable for B under C-rich condition and a C site is favorable under Si-rich condition. Additionally, B-substitution at either single carbon or silicon atom site in DWSiCNT could induce spontaneous magnetization.     

Atom Capture by Nanotube and Scaling Anomaly

The existence of bound state of the polarizable neutral atom in the inverse square potential created by the electric field of a single walled charged carbon nanotube (SWNT) is shown to be theoretically possible. The consideration of inequivalent boundary conditions due to self-adjoint extensions lead to this nontrivial bound state solution. It is also shown that the scaling anomaly is responsible for the existence of such bound state. Binding of the polarizable atoms in the coupling constant interval η ²∈[0,1) may be responsible for the smearing of the edge of steps in quantized conductance, which has not been considered so far in the literature.     

Ab initio study of the diffusion mechanisms of gallium in a silicon matrix

We present the results of a study into the diffusion mechanisms of Ga defects in crystalline Si using ab initio techniques. Five stable neutral configurations for single and multi-atom defects are identified by density-functional theory (DFT) calculations within the local density approximation and using a localized basis set as implemented in the SIESTA package. Formation energy (E _F ) calculations on these stable structures show the most likely neutral single-atom defect to be the Ga substitutional, with an E _F of 0.7 eV in good agreement with previous work. Charge state studies show the Ga tetrahedral interstitial defect to be in a + 1 state for most doping conditions. They also indicate the possibility for a gallium substitutional-tetrahedral interstitial complex to act as a deactivating center for the Ga dopants except in n-doped regime, where the complex adopts a − 1 charge state. Migration pathway calculations using SIESTA coupled with the activation relaxation technique (ART nouveau) allow us to determine possible migration paths from the stable configurations found, under various charge states. In general, diffusion barriers decrease as the charge state becomes more negative, suggesting that the presence of Si self-interstitials can enhance diffusion through the kicking out of substitutional Si and by adding negative charge carriers to the system. An overall picture of a possible Ga diffusion and complex formation mechanism is presented based on these results.     

Sol-gel synthesis and dilute magnetism of nano MgO powder doped with Fe

Mg oxides doped with 1 % ⁵⁷Fe were prepared by a sol-gel method, and annealed at various temperatures. Nano-size Mg oxides were characterized by Mössbauer spectrometry, magnetization and XRD measurements. The crystalline size of MgO increases with increase of annealing temperature. Samples annealed at 600 °C and 800 °C gave only doublet peaks of paramagnetic Fe³⁺ in Mössbauer spectra although Fe³⁺ doping into MgO induced a distorted structure and showed weak ferromagnetism. It is considered that the magnetic property is due to defect induced magnetism by doping Fe³⁺ into MgO. For a sample heated at 1000 °C, it is found from low temperature Mössbauer spectra that Fe³⁺ species are located at the core and shell of fine MgFe₂O₄ grains and diluted in MgO matrix.     

Nitrogen and Boron substitutional doped zigzag silicene nanoribbons: Ab initio investigation

We performed a spin polarized density-function theory study of the stabilities, electronic and magnetic properties of zigzag silicene nanoribbons (ZSiNRs) substitutionally doped with a single N or B atom located at various sites ranging from edge to center of the ribbon. From minimization of the formation energy, it is found that the substitutional doping is favorable at edge of the ribbon. A single N or B atom substitution one edge Si atom of ZSiNRs can greatly suppress the spin-polarizations of the impurity atom site and its vicinity region, and leads to a transition from antiferromagnetic (AFM) state to ferromagnetic (FM) state, which is attributed to the splitting of the original spin degenerate edge bands. A single N atom doped ZSiNRs still keep semiconductor property but a single B atom doped ZSiNRs exhibit a half-metallic character. Our results reveal that substitution doped ZSiNRs have potential applications in Si-based nanoelectronics, such as field effect transisitors (FETs), negative differential resistance (NDR) and spin filter (SF) devices.     

Band-gap bowing and p-type doping of (Zn,Mg, Be)O wide-gap semiconductor alloys: a first-principles study

Using a first-principles band-structure method and a special quasirandom structure (SQS) approach, we systematically calculate the band gap bowing parameters and p-type doping properties of (Zn, Mg, Be)O related random ternary and quaternary alloys. We show that the bowing parameters for ZnBeO and MgBeO alloys are large and dependent on composition. This is due to the size difference and chemical mismatch between Be and Zn(Mg) atoms. We also demonstrate that adding a small amount of Be into MgO reduces the band gap indicating that the bowing parameter is larger than the band-gap difference. We select an ideal N atom with lower p atomic energy level as dopant to perform p-type doping of ZnBeO and ZnMgBeO alloys. For N doped in ZnBeO alloy, we show that the acceptor transition energies become shallower as the number of the nearest neighbor Be atoms increases. This is thought to be because of the reduction of p-d repulsion. The N_O acceptor transition energies are deep in the ZnMgBeO quaternary alloy lattice-matched to GaN substrate due to the lower valence band maximum. These decrease slightly as there are more nearest neighbor Mg atoms surrounding the N dopant. The important natural valence band alignment between ZnO, MgO, BeO, ZnBeO, and ZnMgBeO quaternary alloy is also investigated.     

Adsorption of SO2 on Li atoms deposited on MgO (1 0 0) surface: DFT calculations

The adsorption of sulfur dioxide molecule (SO₂) on Li atom deposited on the surfaces of metal oxide MgO (1 0 0) on both anionic and defect (F_s-center) sites located on various geometrical defects (terrace, edge and corner) has been studied using density functional theory (DFT) in combination with embedded cluster model. The adsorption energy (E_ads) of SO₂ molecule (S-atom down as well as O-atom down) in different positions on both of O⁻² and F_s sites is considered. The spin density (SD) distribution due to the presence of Li atom is discussed. The geometrical optimizations have been done for the additive materials and MgO substrate surfaces (terrace, edge and corner). The oxygen vacancy formation energies have been evaluated for MgO substrate surfaces. The ionization potential (IP) for defect free and defect containing of the MgO surfaces has been calculated. The adsorption properties of SO₂ are analyzed in terms of the E_ads, the electron donation (basicity), the elongation of S-O bond length and the atomic charges on adsorbed materials. The presence of the Li atom increases the catalytic effect of the anionic O⁻² site of MgO substrate surfaces (converted from physisorption to chemisorption). On the other hand, the presence of the Li atom decreases the catalytic effect of the F_s-site of MgO substrate surfaces. Generally, the SO₂ molecule is strongly adsorbed (chemisorption) on the MgO substrate surfaces containing F_s-center.     

Electronic structure of BN nanotubes with intrinsic defects NB and BN and isoelectronic substitutional impurities PN, AsN, SbN, InB, GaB, and AlB

The effect of intrinsic defects and isoelectronic substitutional impurities on the electronic structure of boron-nitride (BN) nanotubes is investigated using a linearized augmented cylindrical wave method and the local density functional and muffin-tin approximations for the electron potential. In this method, the electronic spectrum of a system is governed by a free movement of electrons in the interatomic space between cylindrical barriers and by a scattering of electrons from the atomic centers. Nanotubes with extended defects of substitution N_B of a boron atom by a nitrogen atom and, vice versa, nitrogen by boron B_N with one defect per one, two, and three unit cells are considered. It is shown that the presence of such defects significantly affects the band structure of the BN nanotubes. A defect band π(B, N) is formed in the optical gap, which reduces the width of the gap. The presence of impurities also affects the valence band: the widths of s, sp, and p_π bands change and the gap between s and sp bands is partially filled. A partial substitution of the N by P atoms leads to a decrease in the energy gap, to a separation of the Ds(P) band from the high-energy region of the s(B, N) band, as well as to the formation of the impurity Dπ(P) and Dπ*(P) bands, which form the valence-band top and conduction-band bottom in the doped system. The influence of partial substitution of N atoms by the As atom on the electronic structure of BN nanotubes is qualitatively similar to the case of phosphorus, but the optical gap becomes smaller. The optical gap of the BN tubule is virtually closed due to the effect of one Sb atom impurity per translational unit cell, in contrast to the weak indium-induced perturbation of the band structure of the BN nanotube. Introduction of the one In, Ga or Al atom per three unit cells of the (5, 5) BN nanotube results in 0.6 eV increase of the optical gap. The above effects can be detected by optical and photoelectron spectroscopy methods, as well as by measuring electrical properties of the pure and doped BN nanotubes. They can be used to design electronic devices based on BN nanotubes.     

Influence of V substitution for Fe on the transport and magnetic properties of Sr2FeMoO6

We have investigated the crystal structure, magnetization and magnetoresistance of the double perovskite compounds Sr₂(Fe_1−xV_x)MoO₆ (0≤x≤0.1). The lattice constants and the cation ordering decrease monotonously with the V content. The Curie temperature, saturation magnetization and low field magnetoresistance of the compounds decrease with increasing x due to the reduced degree of ordering. The resistivity of Sr₂FeMoO₆ and lightly doped samples shows semiconductive behavior, while the samples with higher doping levels exhibit a semiconductor-metal transition around 80 K.     

Structural,optical and magnetic study of (1−x)ZnO–xMgO composites prepared through solid state reaction method

We report the study of structural, optical and magnetic properties of (1−x)ZnO–xMgO (x=0.35, 0.40, 0.45 and 0.50) composites prepared by solid state reaction method. X-ray diffraction pattern confirms the presence of both the phases associated with ZnO (hexagonal) and MgO (cubic), which is revealed through the existence of (1 1 1) and (2 0 0) peaks in addition to ZnO peaks. The lattice parameter c as calculated using X-ray analysis undergoes shrinkage with increasing content of MgO. Microstructural analysis suggests that there is no variation in spherical elongated shape of grains with increasing concentration of MgO, where the average grain size is found to be ∼600 nm. The band gap as calculated from optical absorption spectra obtained by diffuse reflectance method recorded at room temperature is tuned from 3.16 to 3.55 eV. Photoluminescence spectra consist of near band edge UV emission (389 nm) and defect level emission (503 nm). The increase of MgO concentration leads to blue shift of UV emission peaks. The magnetic measurements conducted using SQUID at 5 K temperature reveals ferromagnetism along with paramagnetic and superparamagnetic components. Saturation magnetisation (M_s) is observed to be enhanced with MgO doping.     

Enhancement of initial permeability due to Mn substitution in polycrystalline Ni0.50−xMnxZn0.50Fe2O4

The structural and magnetic properties of Mn substituted Ni_0.50−xMn_xZn_0.50Fe₂O₄ (where x=0.00, 0.10 and 0.20) sintered at various temperatures have been investigated thoroughly. The lattice parameter, average grain size and initial permeability increase with Mn substitution. Both bulk density and initial permeability increase with increasing sintering temperature from 1250 to 1300 °C and above 1300 °C they decrease. The Ni_0.30Mn_0.20Zn_0.50Fe₂O₄ sintered at 1300 °C shows the highest relative quality factor and highest initial permeability among the studied samples. The initial permeability strongly depends on average grain size and intragranular porosity. From the magnetization as a function of applied magnetic field, M(H), it is clear that at room temperature all samples are in ferrimagnetic state. The number of Bohr magneton, n(μ_B), and Neel temperature, T_N, decrease with increasing Mn substitution. It is found that Mn substitution in Ni_0.50−xMn_xZn_0.50Fe₂O₄ (where x=0.20) decreases the Neel temperature by 25% but increases the initial permeability by 76%. Possible explanation for the observed characteristics of microstructure, initial permeability, DC magnetization and Neel temperature of the studied samples are discussed.     

p-type doping of GaInNAs quaternary alloys

Using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random Ga1−xInxN1−yAsy quaternary alloys. We show that the MgGa substitution is a better choice than ZnGa to realize the p-type doping because of the lower transition energy level and lower formation energy. The natural valence band alignment of GaAs and GaInNAs alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing In composition. Therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices.     

DFT study on the chemical sensitivity of C3N nanotubes toward acetone

Potential application of single-walled C₃N nanotubes was investigated as chemical sensors for acetone molecules based on the density functional theory calculations. It was found that the pristine nanotube weakly adsorbs an acetone molecule with the adsorption energy of − 9.7 kcal/mol, and its electronic properties are not sensitive to this molecule. By replacing a C atom with a Si atom, the nanotube becomes a p-type semiconductor. The adsorption energy of the acetone molecule on the Si-doped nanotube becomes much more negative (E_ad=−67.4 kcal/mol). The adsorption process leads to a sizable increase in the resistance of the Si-doped tube, thereby, it can show the presence of acetone molecule, creating an electronic signal. Also, the sensitivity of these devices can be controlled by the doping level of Si atoms. By increasing the number of dopant atoms from 1 to 4, the sensitivity is gradually increased.     

First principles study of Eu doped carbon nanotubes

The geometric and electronic structures of Eu doped single-walled carbon nanotubes (SWCNTs) have been studied using density functional theory. Three different doping configurations are considered. All of these configurations are stable upon relaxation, and Eu atom on the top of the inside hole site is the most favorable configuration for most nanotubes, except (3,3) CNT. The formation energies vary regularly with the same trend as in the Co and Fe doped cases. The electronic structures studies indicate that the charge transfer basically occurs between 5d6s of Eu and the antibonding orbital of the C6 ring of the SWCNT. Eu atom is monovalent for the exohedral and substitutional doping, and for the endohedral doping of large radius nanotubes; it is bivalent for endohedral doping of (3,3) tube. As the radius increases, the net charges on Eu atom steadily decrease for exohedral and endohedral doping. The magnetic moments of Eu atoms are preserved in all of the configurations, but they vary with the radius of nanotube and adsorbing sites.     

共轭高聚物中低浓度掺杂下的杂质分布研究

基于紧束缚近似,研究了一维共轭高聚物链在链呈电中性,以及链中带有正、负电荷等不同情况下低浓度掺杂对系统稳定性的影响,并采用绝热近似下的自洽计算方法得出了系统在掺杂前后发生的总能量改变。研究发现,掺杂位置对系统稳定性的影响非常明显。根据杂质分布的特点,一条共轭高聚物链一般可分为链端区、中心区和过渡区三个明显不同的区域。系统的稳定性不仅受掺杂位置,杂质势的强度及性质影响,而且还受到高聚物链的载荷状态的影响。在链端区及过渡区,杂质分布趋向于凝聚成畴,而在中心区域,杂质趋于均匀分布。该研究表明,通过对掺杂条件的控制,可以有效控制杂质在共轭高聚物中的分布状态。     

A wire trap for neutral atoms

We present new ways of trapping a neutral atom with static electric and magnetic fields. We discuss the interaction of a neutral atom with the magnetic field of a current carrying wire and the electric field of a charged wire. Atoms can be trapped by the 1/r magnetic field of a current-carrying wire in a two-dimensional trap. The atoms move in Kepler-like orbits around the wire and angular momentum prevents them from being absorbed at the wire. Trapping was demonstrated in an experiment by guiding atoms along a 1 m long current-carrying wire. Stable traps using the interaction of a polarizable atom with the electric field of a charged wire alone are not possible because of the 1/r ² form of the interaction potential. Nevertheless, we show that one can build a microscopic trap with a combination of a magnetic field generated by a current in a straight wire and the static electric field generated by a concentric charged ring which provides the longitudinal confinement. In all of these traps, the neutral atoms are trapped in a region of maximal field, in theirhigh-field seeking state.Dedicated to H. Walther on the occasion of his 60th birthday     

Optical properties of layered superconductor LixZrNCl

We investigated band-insulator-to-superconductor transition in Li_xZrNCl driven by carrier doping by means of magnetization, resistivity, and optical reflectivity measurements. The magnetization and the resistivity measurements showed that the transition occurs at around x=0.05. The pristine β-ZrNCl exhibited reflectivity and optical conductivity spectra typical of an insulator, whereas in the spectrum of Li_0.37ZrNCl, Drude-like high reflectance band and associated plasma edge are apparently observed. This is the direct spectroscopic evidence of insulator-to-metal transition of Li_xZrNCl.     

First-Principles Studies on Properties of Boron-Related Impurities in c-BN

We investigate, by first-principles calculations, the pressure dependence of formation enthalpies and defective geometry and bulk modulus of boron-related impurities （VB, Cs, NB, and OB） with different charged states in cubic boron nitride （c-BN） using a supercell approach. It is found that the nitrogen atoms surrounding the defect relax inward in the case of CB, while the nitrogen atoms relax outward in the other cases. These boron-related impurities become much more stable and have larger concentration with increasing pressure. The impurity CB^＋1 is found to have the lowest formation enthalpy, make the material exhibit semiconductor characters and have the bulk modulus higher than ideal c-BN and than those in the cases of other impurities. Our results suggest that the hardness of c-BN may be strengthened when a carbon atom substitutes at a B site.     

Structural, magnetic and electronic structure studies of Mn doped TiO2 thin films

We report structural, magnetic and electronic structure study of Mn doped TiO₂ thin films grown using pulsed laser deposition method. The films were characterized using X-ray diffraction (XRD), dc magnetization, X-ray magnetic circular dichroism (XMCD) and near edge X-ray absorption fine structure (NEXAFS) spectroscopy measurements. XRD results indicate that films exhibit single phase nature with rutile structure and exclude the secondary phase related to Mn metal cluster or any oxide phase of Mn. Magnetization studies reveal that both the films (3% and 5% Mn doped TiO₂) exhibit room temperature ferromagnetism and saturation magnetization increases with increase in concentration of Mn doping. The spectral features of XMCD at Mn L_3,2 edge show that Mn²⁺ ions contribute to the ferromagnetism. NEXAFS spectra measured at O K edge show a strong hybridization between Mn, Ti 3d and O 2p orbitals. NEXAFS spectra measured at Mn and Ti L_3,2 edge show that Mn exist in +2 valence state, whereas, Ti is in +4 state in Mn doped TiO₂ films.