Structural,elastic, electronic,andoptical properties of layered TiNX (X = F,Cl, Br,I) compounds: a density functional theory study

ABSTRACT

Titanium nitride halides, TiNX (X = F, Cl, Br, I) in the α-phase (orthorhombic) are exciting quasi two-dimensional (2D) electronic systems exhibiting a fascinating series of electronic ground states. Pristine TiNX are semiconductors with varying energy gaps and possess attractive properties for potential applications in optoelectronics, photovoltaics, and thermoelectrics. Alkali metal intercalated TiNCl becomes superconducting at reasonably high temperature. We have revisited the electronic band structure of TiNX using density functional theory (DFT) based calculations. The atomic orbital resolved partial electronic energy densities of states are calculated together with the total density of states (TDOS). The structural and elastic properties have been investigated in details for the first time. The elastic anisotropy has been explored. The optical properties of TiNX are studied for the first time. The Debye temperatures have been calculated and the related thermal and phonon parameters are discussed. The calculated physical parameters are compared with existing theoretical and experimental results and showed fair agreement. TiNX are found to reflect electromagnetic radiation strongly in the mid ultraviolet region. The elastic properties show high degree of anisotropy. The effect of halogen atoms on various structural, elastic, electronic, and thermal properties in TiNX are also discussed in detail.     

Sc3N and Sc2C2 encapsulated B40: Smarter than its carbon analogue

A detailed comparative investigation on the recently synthesised B₄₀ and C₄₀ along with their metal nitride (Sc₃N)and carbide (Sc₂C₂) encapsulated endohedral fullerenes, is performed under density functional theory for the first time. The structures, electronic, thermodynamic and magnetic properties of all the considered compounds are explored in detail. The present study identifies borospherene (B₄₀) and its encapsulated nitride (Sc₃N@B₄₀) and carbide (Sc₂C₂@B₄₀) endohedral borofullerenes as the better candidates for future novel nano-applications compared to their carbon bucky ball analogues.     

Fe,Co,Ni掺杂石墨烯表面吸附C_2H_4的第一性原理研究

基于密度泛函理论(DFT)的广义梯度近似(GGA),本文对本征石墨烯以及掺杂Fe,Co,Ni石墨烯的几何结构和电子性质进行了优化计算,并计算了C_2H_4在本征石墨烯以及掺杂石墨烯表面的吸附过程,讨论了体系的吸附能、稳定性、DOS及掺杂对键长的影响.结果表明C_2H_4在本征石墨烯B位的吸附和掺杂石墨烯的吸附为化学吸附,在本征石墨烯T和H位的吸附为物理吸附;掺杂后石墨烯的比表面积增大,与本征石墨烯相比,掺杂使费米能级附近的态密度积分显著提高,表明掺杂石墨烯的电导性会发生变化,从而影响对C_2H_4的气敏度..C_2H_4在Fe、Co、Ni分别掺石墨烯的最佳吸附位为T位、H位和B位;掺杂Fe,Ni后体系的吸附能力显著提高,且掺杂Ni时体系的吸附能力最好.     

Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature.     

First-principles study on the magnetic properties of transition-metal atoms doped (ZnS)12 cluster

A first-principles density functional investigation has been performed to evaluate the structural, electronic, and magnetic properties of (ZnS)₁₂ doped with one or two transition-metal (TM) atoms (Fe, Co, and Ni). Substitutional- and interstitial-doping are considered. The substitutional isomers are found to be most favorable for Fe-doped clusters, while the interstitial isomers are found to be most favorable for Co- and Ni-doped clusters. Magnetic coupling between the TM atoms at the nearest neighbor position is mainly governed by the competition between direct ferromagnetic and antiferromagnetic interactions between two TM atoms via the S atom due to strong p-d hybridization. The coupling is short-ranged. Most importantly, we demonstrate that the Fe and Ni endohedral bi-doped (ZnS)₁₂ clusters favor the ferromagnetic state, which has potential applications in nanoscale quantum devices.     

First-principles study of electrical structures and optical properties of Ag or Au doped MgF2 crystal

The geometric structure, electronic and optical properties of MgF₂ crystal mixed with Ag, Au are obtained by adopting the first-principles calculation of plane wave ultra-soft pseudo-potential technology based upon the density function theory (DFT). The calculation results show that the doping of Ag and Au diminishes of the MgF₂ system and the occurrence of half-metallic properties with a greater influence of Au than Ag. In addition, the refractive index and absorption coefficient of the MgF₂ system are enhanced because of the doping. The modulation action on the refractive index of MgF₂ indicates potential application of the forbidden bandwidth doping in optical devices.     

Cd、Sr掺杂Mg2Ge电子结构和光学性质的第一性原理研究

此文用基于密度泛函理论(DFT)的第一性原理计算方法,分别研究了本征、掺Cd、掺Sr的Mg₂Ge的能带结构、电子态密度和光学性质.研究结果表明,本征Mg₂Ge是一种间接带隙半导体,带隙值为0.228eV.Sr的掺入使其变成带隙为0.591 eV的直接带隙半导体,Cd掺杂Mg₂Ge后表现出半金属性质.掺杂后的主要吸收峰减小,吸收谱范围增加.在可见光能量范围内,掺杂的Mg₂Ge有更低的反射率,对可见光的利用率增强.此外,掺杂还提高了高能区的光电导率.     

Electronic and optical properties of vacancy and B,N, O and F doped graphene: DFT study

Structural and optical properties of graphene with a vacancy and B, N, O and F doped graphene have been investigated computationally using density functional theory (DFT). We find that B is a p-type while N, O and F doped graphene layers, as well as graphene with a vacancy are n-type semiconductors. Optical properties for both cases of in plane $\left(E\perp c\right)$ and out of plane $\left(E6c\right)$ polarization of light are investigated. It is observed that with the increase in the number of electrons entering the supercell, the amount of absorption of the system decreases and the absorption peaks are transferred to higher energies (blue shift).     

Investigation of Physical and electrochemical properties of Ni doped CeO2 Thin films: DFT calculation

Undoped and Ni-doped thin films of cerium dioxide have been deposited by spray pyrolysis technique on the glass substrate at the optimized temperature (450 ± 5) °C. Thin films Ce_1-xNi_xO₂ doped by different concentrations of Ni was characterized by X-ray diffraction. Raman analysis showed a peak at 461 ± 1 cm⁻¹ position for the undoped film, which corresponds to the active mode (F_2g mode) of the cubic fluorite structure. SEM images showed that the particles have a uniform spherical shape. EDS data have confirmed all elements (Ce, Ni and O) existence. Optical properties of samples show a decrease in band gap energy with increasing the nickel rate. Cyclic voltammetry indicates that the storage capacity of samples increases as the Ni rate increases. The EIS of CeO₂/ITO electrodes displays a small semicircular at high frequency. The theoretical results obtained using WIEN2k match well with the experimental ones.     

FeO+催化N2O与CO反应的密度泛函理论研究

本文采用密度泛函理论DFT-B3LYP方法6-311+G(2d) 的基组, 计算研究了气相中六重态和四重态FeO+离子催化N2O和CO生成N2和 CO2反应的微观机理, 通过计算两种重态金属离子亲氧性（OA）, 从热力学方面说明了主题反应的可行性。分析反应过程的热力学性质和动力学因素得到FeO+与N2O复合生成反应复合物, 之后继续与CO复合成中间体是能量有利反应路径,所得结果与实验观测相符.     

FeO~+催化N_2O与CO反应的密度泛函理论研究

本文采用密度泛函理论DFT-B3LYP方法6-311+G(2d)的基组,计算研究了气相中六重态和四重态FeO+离子催化N2O和CO生成N2和CO2反应的微观机理,通过计算两种重态金属离子亲氧性(OA),从热力学方面说明了主题反应的可行性.分析反应过程的热力学性质和动力学因素得到FeO+与N2O复合生成反应复合物,之后继续与CO复合成中间体是能量有利反应路径,所得结果与实验观测相符.     

缺陷碳纳米管限域金属Ti原子的理论研究

基于密度泛函第一性原理研究了金属原子Ti在原始、单空位缺陷(SV)、Stone-Wales(SW)缺陷碳纳米管内外的吸附情况.我们的计算结果表明金属Ti原子在缺陷碳纳米管内外结合能的排列顺序为:SVSW-zSW-xpristine(外吸附),SVSW-xSW-zpristine(内吸附).同时,我们通过吸附结构、电子密度和态密度等分析了Ti原子与碳纳米管的作用机制.其中,SV缺陷碳纳米管由于失去一个碳原子而形成了的三个悬键具有很强的结合能力,金属原子Ti在SV缺陷碳纳米管内外的吸附能力都是最强的.对于SW缺陷的碳纳米管,由于缺陷的位置不同,对于金属原子Ti内外吸附的能力也是不同的.因此,缺陷的存在能调节碳纳米管载体对Ti原子的吸附性能.     

Structural and electronic properties of a single C chain doped zigzag BN nanoribbons

The effects of single C-chain on the stability, structural and electronic properties of zigzag BN nanoribbons (ZBNNRs) were investigated by first-principles calculations. C-chain was expected to dope at B-edge for all the ribbon widths _Nz$N_z$ considered. The band gaps of C-chain doped _Nz$N_z$-ZBNNR are narrower than that of perfect ZBNNR due to new localized states induced by C-chain. The band gaps of _Nz$N_z$-ZBNNR-C(n  ) are direct except for the case of C-chain position n=2$n=2$. Band gaps of BN nanoribbons are tunable by C-chain and its position n, which may endow the potential applications of BNNR in electronics.     

四种耐热含能化合物电子结构的第一性原理研究

本文模拟计算了2,2’,4,4’,6,6’-六硝基联苯(HNBP)、2,2’,4,4’,6,6’-六硝基二苯乙烯(HNS)、2,5-二苦基-1,3,4-噁二唑(DPO)和5,5''-双(2,4,6-三硝基苯基)-2,2''-双(1,3,4-噁二唑)(TKX-55)四种耐热含能化合物的分子结构、Mulliken电荷布居、分子静电势(MEP)和Hirshfeld表面, 通过研究其分子特性、电子特性以及分子间相互作用, 以了解高耐热性含能化合物的耐热机理. 结果表明, 桥连接结构的复杂性以及分子间强氢键相互作用会增强含能化合物的稳定性. 此外, 本研究还发现中间基团的加入会对四种含能化合物分子两侧芳香环上碳原子的电荷分布以及分子表面正负静电势区域面积产生一定的影响.     

First-principles study on the structural and electronic properties of LiB and its hydrides (Li2BnHn, n=5, 8, 12, LiBH4)

Structural, electronic and vibrating properties of LiB and its hydrides (Li₂B_nH_n, n=5, 8, 12, LiBH₄) were calculated by the first-principles using density functional theory in its generalized gradient approximation. The calculated results are in good agreement with experimental studies. The deviation between theory and experimental results are also discussed. With the increasing of H atoms in range of 5-12, the band gap energy increases and the width of the conduction band decreases. Comparing with LiB, the band gap of LiBH₄ is broadened, which indicates the enhancement of Li-B and Li-H bond strength. Valence electrons mainly transfer from Li atoms to B and H atoms. As a result, Li atoms are thought to be partially ionized as Li⁺ cations. There is little contribution of Li orbital to the occupied states, resulting in Li-H and Li-B bond exhibiting an ionic nature, and B-H bond showing a covalent nature.     

Ab initio study of structural, electronic and optical properties of MnHg(SCN)4 and FeHg(SCN)4

 The structural, electronic and optical properties of MnHg(SCN)₄ and FeHg(SCN)₄ were studied by means of quantum-mechanical calculations based on the density-functional theory and pseudopotential method. The lattice constants can be compared with the experimental values when the effects of temperature are considered. The peaks of partial density of states of S, C, N and Hg of FeHg(SCN)₄ have a tendency of shifting to the higher energy levels relative to those of MnHg(SCN)₄. The distributions of the 3d electronic states in the transition metal atoms show quite large difference and decide different optical properties. We found that absorptional peaks of FeHg(SCN)₄ lag behind those of MnHg(SCN)₄ and the peak in the infrared range has a higher absorptional intensity, which are in accord with the experimental results. By analyzing the distributions and transitions of the 3d electronic states, we explained the different absorption phenomena.     

TDPAC and first-principles study of electronic and structural properties of a Pd-vacancy complex in undoped germanium

Pd is one of the metals suitable for inducing low-temperature crystallization in Ge. However, it is not clear how residual Pd atoms are integrated into the Ge lattice. Therefore, time-differential γ–γ perturbed angular correlations (TDPAC) technique using the ¹⁰⁰Pd(→¹⁰⁰Rh) nuclear probe produced by recoil implantation has been applied to study the hyperfine interactions of this probe in single-crystalline undoped Ge. A Pd-vacancy complex aligned along the <111> crystallographic direction with a unique interaction frequency of 8.4(5) Mrad/s has been identified. This complex was measured to have a maximum relative fraction of about 76(4)% following annealing at 350 ^°C. Further annealing at higher temperatures reduced this fraction, possibly via dissociation of the complex. Calculations suggest dissociation energy of 1.94(5) eV for the complex. DFT calculations performed in this work are in reasonable good agreement with the experimental values for the electric-field gradient of the defect complex in Ge and Si for comparison. The calculations predict a split-vacancy configuration with the Pd on a bond-centred interstitial site having a nearest-neighbour semi-vacancy on both sides (V-Pd_BI-V) in Ge and Si.