Optical properties of Cr/Fe(t)/MgO (0 0 1) thin films

In this work we report on the optical properties of single-crystalline iron thin films. For this, Cr-capped Fe films with thickness, t, in the range 30–300 Å were prepared on MgO (0 0 1) by DC magnetron sputtering, and then studied by optical absorption technique within the range from 1.0 to 3.6 eV. All measurements were carried out at room temperature using a fiber optics spectrophotometer. The intensity of the transmitted light decreases with increasing film thickness. The optical constants of the films are deduced from a model that considers the transmission of light by two absorbing films on an absorbing substrate. The absorption coefficient of the Fe films is also calculated from the transmission data. The absorption spectra show the following characteristics: (i) two large absorption peaks centered at about 1.20 and 2.65 eV; and (ii) a sharp step near 1.40 eV. These structures are associated with conventional interband transitions of the iron film.     

Influence of argon ambience on the structural,morphological and optical properties of pulsed laser ablated zinc sulfide thin films

Nanostructured zinc suplhide thin films are successfully deposited on quartz substrates using pulsed laser deposition (PLD) under different argon pressures (0, 5, 10, 15 and 20 Pa). The influence of argon ambience on the microstructural, optical and luminescence properties of zinc sulfide (ZnS) thin films is systematically investigated. The GIXRD data suggests rhombohedral structure for ZnS films prepared under different argon ambience. Self-assembly of grains into well-defined patterns along the y direction is observed in the AFM image of the film deposited under argon pressure 20 Pa. All the films show a blue shift in optical band gap. This can be due to the quantum confinement effect and less widening of conduction and valence band for the films with less thickness and smaller grain size. The PL spectra of the different films are recorded at excitation wavelengths 250 nm and 325 nm and the spectra are interpreted. The PL spectra of the films recorded at excitation wavelength 325 nm show intense yellow emission. The film deposited under an argon pressure of 15 Pa shows the highest PL intensity for excitation wavelength 325 nm. For the PL spectra (excitation at 250 nm), the highest PL intensity is observed for the film prepared under argon free ambience. In our study, 15 Pa is the optimum argon pressure for better crystallinity and intense yellow emission when excited at 325 nm.     

Optical properties of nanostructured InSe thin films

Thin films of InSe were prepared by thermal evaporation technique. The as-deposited films have nano-scale crystalline nature and the annealing enhanced the degree of crystallinity. The optical properties of nanocrystalline thin films of InSe were studied using spectrophotometric measurements of transmittance, T, and reflectance, R, at normal incidence of light in the wavelength range 200–2500 nm. The optical constants (refractive index, n, and absorption index, k) were calculated using a computer program based on Murmann's exact equations. The calculated optical constants are independent of the film thickness. The optical dispersion parameters have been analysed by single oscillator model. The type of transition in InSe films is indirect allowed with a value of energy gap equals to 1.10 eV, which increased to 1.23 eV upon annealing.     

Structural and optical properties of chromotrope 2R thin films of different thicknesses

Chromotrope 2R (CHR) films of different thicknesses have been prepared using spin coater. The material has been characterized using FT-IR, DTA and X-ray diffraction. The XRD of the material in powder and thin film forms showed polycrystalline structure with triclinic phase. Preferred orientation at the (1 1 4) plane is observed for the deposited films. Initial indexing of the XRD pattern was performed using “Crystalfire” computer program. Miller indices, h k l, values for each diffraction line in X-ray diffraction (XRD) spectrum were calculated and indexed for the first time. The DTA thermograms of CHR powder have been recorded in the temperature range 25–350 °C with different heating rates. The spectra of the infra-red absorption allow characterization of vibration modes for the powder and thin film. The effect of film thickness on the optical properties has been studied in the UV-visible-NIR regions. The films show high transmittance exceeding 0.90 in the NIR region λ > 800 nm. The intensity of the absorption peaks for λ < 800 nm are enhanced as the film thickness increase. The absorption bands are attributed to the (π–π*) and (n–π*) molecular transitions. The optical properties have been analyzed according to the single-oscillator model and the dispersion energy parameters as well as the free charge carrier concentration have been determined. The optical energy gap as well as the oscillator strength and electric dipole strength have been calculated.     

Influence of growth temperature and deposition duration on the structure,surface morphology and optical properties of InN/YSZ (1 0 0)

InN films with the wurtzite structure have been grown directly on YSZ (1 0 0) substrate by the RF-magnetron sputtering technique. Strongly (0 0 2) oriented films with smooth surfaces (0.7–2.9 nm surface roughness depending on substrate temperature), were grown within 30 min. Films deposited for 60 min developed three-dimensional (3D) pyramidal islands on top of their surfaces, which diminished the residual elastic strain. The optical absorption edge and PL peak energy around 1.7 eV were found to redshift with increasing film thickness and substrate temperature.     

Characterization of luminescent chromophore obtained from silica spheres

Blue light emitting chromophores have been separated from silica spheres by soaking them into acetone for 120 days. The luminescent chromophores were not obtained from other solvents, including ether, methanol, ethanol, 2-propanol, chloroform and tetrahydrofuran. According to the Fourier transform infrared spectrum, the luminescent material is composed of C–OH, –CH₂, –CH₃, C=O, and Si–O–Si. UV–visible absorption peak of the chromophore is at 5.17 eV (240 nm). Field emission scanning electron microscope images show small cracks on the surface of aged spheres. The luminescence peak was at 2.81 eV (441 nm) for excitation energy between 3.88 and 3.35 eV and slightly shifted toward lower energy for excitation energy lower than 3.35 eV. The deconvoluted luminescent spectrum shows two emission bands at 3.08 and 2.74 eV, which are well-matched the oxygen deficient center model. Compared to the absorption peak (5.17 eV) and the emission peak (2.81 eV), large Stokes shift (2.36 eV) is observed.     

Optical absorption and dispersion characterizations of CuGaSe2 thin films prepared by flash evaporation technique

Thin films of CuGaSe₂ have been prepared by flash evaporation technique. The optical properties of the prepared films were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence of light in the wavelength range from 400 to 2500 nm. The optical constants as refractive index, n, and absorption index, k, were calculated and found to be independent of film thickness in the range of the film thickness 132–423 nm. The analysis of the photon energy against the absorption coefficient showed three direct optical transitions (one of them is allowed while the others are forbidden). This direct transition was ascribed to the crystal field and spin orbital splitting of the upper most valence band. The crystal field and spin orbital splitting of CuGaSe₂ were found to be ? 0.15 eV and 0.45 eV, respectively. The dispersion of the refractive index is discussed in terms of the single oscillator Wemple–DiDomenico (WD) model. The single oscillator energy (E_o), the dispersion energy (E_d), the high frequency dielectric constant (ε_∞), the lattice dielectric constant (ε_L) and the ratio of free charge carrier concentration to the effective mass (N / m*) were estimated. The capacitance–voltage measurements of CuGaSe₂/p-Si heterojunction showed that the diode is abrupt junction diode. The carrier concentration and the built-in voltage were estimated. The current–voltage characteristics of the device under illumination were investigated and photovoltaic properties of the device were evaluated.     

Influence of γ-irradiation on the optical parameters of 4-tricyanovinyl-N,N-diethylaniline thin films

Thin films of 4-tricyanovinyl-N,N-diethylaniline (TCVA) were prepared by thermal evaporation technique. The spectral and the optical parameters have been investigated by using the spectrophotometric measurements of both transmittance and reflectance at normal incidence of light in the wavelength range 200–2500 nm. The effect of γ-irradiation on the optical parameters was investigated. It was observed that the increase in γ-irradiation dose caused an increase in the value of absorption index and a shift in the spectrum towards higher wavelengths. Therefore, the value of the optical band gap has decreased from 1.45 eV for as-deposited film to 1.39 eV for film exposed to γ-ray dose of 150 kGy and Urbach tail increased. On the other hand, the dispersion parameters of TCVA films were increased with the increase of the irradiation dose.     

Spectroscopic characterizations of individual single-crystalline GaN nanowires in visible/ultra-violet regime

Spectroscopic investigations of individual single-crystalline GaN nanowires with a lateral dimensions of ～30–90 nm were performed using the spatially resolved technique of electron energy-loss spectroscopy in conjunction with scanning transmission electron microscope showing a 2-Å electron probe. Positioning the electron probe upon transmission impact and at aloof setup with respect to the nanomaterials, we explored two types of surface modes intrinsic to GaN, surface exciton polaritons at ～8.3 eV (～150 nm) and surface guided modes at 3.88 eV (～320 nm), which are in visible/ultra-violet spectral regime above GaN bandgap of ～3.3 eV (～375 nm) and difficult to access by conventional optical spectroscopies. The explorations of these electromagnetic resonances might expand the current technical interests in GaN nanomaterials from the visible/UV range below ～3.5 eV to the spectral regime further beyond.     

Photo-induced effects on structural and optical properties of Ga15Se81Ag4 chalcogenide thin films

Thin films with thickness of 400 nm have been obtained from the Ga₁₅Se₈₁Ag₄ ternary chalcogenide glass prepared by the melt quenching technique. The behavior of several optical constants has been studied from absorption and reflection spectra as a function of photon energy in the wavelength region 400–1200 nm. The amorphous nature of the sample was examined by X-ray diffraction and non-isothermal DSC measurements. Thin films were illuminated by shining white light using 1500 W tungsten lamp with different exposure time. The ambient temperature during the illumination process was controlled and kept at 348 K, selected by DSC thermogram. Analysis of the optical absorption data shows that the rule of non-direct transition predominates. It is found that the optical band gap decreases by increasing the illumination time. It has also been observed that the value of absorption and extinction coefficients increases while the refractive index decreases by increasing the illumination time from 0 to 150 min. The decrease in optical band gap is explained on the basis of the change in nature of the films, from amorphous to crystalline state, with increase of the illumination time.     

Effect of Al-doping on optical and electrical properties of spray pyrolytic nano-crystalline CdO thin films

CdO and Al-doped CdO nano-crystalline thin films have been prepared on glass at 300 °C substrate temperature by spray pyrolysis. The films are highly crystalline with grain size (18–32 nm) and found to be cubic structure with lattice constant averaged to 0.46877 nm. Al-doping increased the optical transmission of the film substantially. Direct band gap energy of CdO is 2.49 eV which decreased with increasing Al-doping. The refractive index and dielectric constant varies with photon energy and concentration of Al as well. The conductivity of un-doped CdO film shows metallic behavior at lower temperature region. This behavior dies out completely with doping of Al and exhibits semiconducting behavior for whole measured temperature range. Un-doped and Al-doped CdO is an n-type semiconductor having carrier concentration is of the order of ∼10²¹ cm⁻³, confirmed by Hall voltage and thermo-power measurements.     

Synthesis of CdS nanostructures using template-assisted ammonia-free chemical bath deposition

CdS micro- and nano-structures (micro/nanotubes and nanostructured films) were obtained by ammonia-free chemical bath deposition using polymer templates (ion track-etched polycarbonate membranes and poly(styrene-hydroxyethyl methacrylate) nanosphere arrays). The semiconductor structures were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), optical absorption, photoluminescence and electrical measurements. The diameters of CdS tubes are between 300 nm and few microns and the lengths are up to tens of micrometers. The SEM images prove that the CdS films are nanostructured due to the deposition on the polymer nanosphere arrays. For both CdS structures (tubes and films) the XRD patterns show a hexagonal phase. The optical studies reveal a band gap value of about 2.5?2.6 eV and a red luminescence at ～1.77 eV. A higher increase of conductivity is observed for illuminating the CdS nanostructured film when compared to the simple semiconductor film. This is a consequence of the periodic patterning induced by the polymer nanosphere array.     

The influence of Au thickness on the structural,optical and electrical properties of ZnO/Au/ZnO multilayer films

Transparent and conductive ZnO/Au/ZnO (ZAZ) multilayer films were deposited on glass substrates by magnetron sputtering without intentional substrate heating. The thickness of Au interlayer was set at 1, 2 and 3 nm.The observed structural, optical and electrical properties were dependent on the thickness of the Au interlayer. For all of the ZAZ films, the diffraction peaks in the XRD pattern were identified as the (002) and (103) planes of a ZnO films and the (111) plane of an Au interlayer. The ZAZ films with a 2 nm thick Au interlayer showed a higher figure of merit than the other ZAZ films prepared in this study, and they also demonstrated the relatively high work function of 5.13 eV.From these results, we concluded that a ZAZ film with a 2 nm thick Au interlayer is an alternative candidate for use as a transparent electrode in OLEDs and various flat panel displays.     

Preparation of cadmium stannate films by spray pyrolysis technique

Cadmium stannate thin films were prepared by spray pyrolysis technique using cadmium acetate and tin(II) chloride precursors at substrate temperatures 450 °C and 500 °C. XRD pattern confirms the formation of orthorhombic (1 1 1) cadmium stannate phase for the film prepared at substrate temperature of 500 °C, whereas, films prepared at 450 °C are amorphous. Film formation does not occur at substrate temperature from 300 to 375 °C. SEM images reveal that the surface of the prepared Cd₂SnO₄ film is smooth. The average optical transmittance of ∼86% is obtained for the film prepared at substrate temperature of 500 °C with the film thickness of 400 nm. The optical band gap value of the films varies from 2.7 to 2.94 eV. The film prepared at 500 °C shows a minimum resistivity of 35.6 × 10⁻⁴ Ω cm.     

Photoluminescence due to exciton–exciton scattering in a GaAs/AlAs multiple quantum well

We have investigated photoluminescence (PL) properties of a GaAs (20 nm)/AlAs (20 nm) multiple quantum well at 10 K under intense excitation conditions. It has been found that a PL band due to exciton–exciton scattering, the so-called P emission, is observed in addition to the biexciton PL under an excitation energy higher than the fundamental heavy-hole exciton by the energy of the longitudinal optical phonon. On the other hand, the P band could never be observed at an excitation energy much higher than the exciton energy, where a band-filling phenomenon appears in the PL spectrum. Furthermore, we confirmed the existence of optical gain leading to stimulated emission in the energy region of the P band using a variable-stripe-length method.     

Photoluminescence studies of ZnO thin films on R-plane sapphire substrates grown by sol–gel method

Zinc oxide (ZnO) thin films on R-plane sapphire substrates were grown by the sol–gel spin-coating method. The optical properties of the ZnO thin films were investigated using photoluminescence. In the UV range, the asymmetric near-band-edge emission was observed at 300 K, which consisted of two emissions at 3.338 and 3.279 eV. Eight peaks at 3.418, 3.402, 3.360, 3.288, 3.216, 3.145, 3.074, and 3.004 eV, which respectively correspond to the free exciton (FX), bound exciton, transverse optical (TO) phonon replica of FX recombination, and first-order longitudinal optical phonon replica of FX and the TO (1LO+TO), 2LO+TO, 3LO+TO, 4LO+TO, and 5LO+TO, were obtained at 12 K. From the temperature-dependent PL, it was found that the emission peaks at 3.338 and 3.279 eV corresponded to the FX and TO, respectively. The activation energy of the FX and TO emission peaks was found to be about 39.3 and 28.9 meV, respectively. The values of the fitting parameters of Varshni's empirical equation were α=4×10^?3 eV/K and β=4.9×10³ K, and the S factor of the ZnO thin films was 0.658. With increasing temperature, the exciton radiative lifetime of the FX and TO emissions increased. The temperature-dependent variation of the exciton radiative lifetime for the TO emission was slightly higher than that for the FX emission.     

Manganese doping influence on the plasmon energy of nickel films

Manganese doping in nickel films capped with copper have been prepared by evaporation in vacuum. The films are composed of grains with an average diameter of ~ 20 nm from scanning electron microscope scans. Optical absorption is measured over a wavelength range of 190–450 nm. Two plasmon peaks are observed at 3.30 eV and 4.45 eV for a range of concentrations of films. The 4.45 eV peak is a bulk plasmon peak that is enhanced by increasing the manganese in nickel. The 3.30 eV peak is a surface plasmon peak that increases in width or strength of plasmon resonance with increasing concentration of manganese. This may be a combination effect of charge carrier concentration and dielectric screening from the reformed electronic band structure caused by manganese doping. By adding manganese into nickel, the ferromagnetic order is further destroyed as a transition into a spin glass occurs. This spin glass behavior is seen in a coercivity measurement at 4 K where the coercivity drops precipitously as the doping concentration increases.     

Transparent CdO/n-GaN(0001) heterojunction for optoelectronic applications

Undoped CdO films were prepared by sol–gel method. Transparent heterojunction diodes were fabricated by depositing n-type CdO films on the n-type GaN (0001) substrate. Current–voltage (I–V) measurements of the device were evaluated, and the results indicated a non-ideal rectifying characteristic with I_F/I_R value as high as 1.17×10³ at 2 V, low leakage current of 4.88×10⁻⁶ A and a turn-on voltage of about 0.7 V. From the optical data, the optical band gaps for the CdO film and GaN were calculated to be 2.30 eV and 3.309 eV, respectively. It is evaluated that interband transition in the film is provided by the direct allowed transition. The n-GaN (0001)/CdO heterojunction device has an optical transmission of 50–70% from 500 nm to 800 nm wavelength range.     

Decay of orientational grating of weakly confined excitons in GaAs thin films

We report the dynamical properties of the exciton orientation in GaAs thin films using the orientational grating (OG) technique. From the results of excitation-power dependence of OG signal, we confirmed that the OG signal comes from the optical nonlinearity of weakly confined excitons. In addition, the OG-decay time decreases with an increase of excitation power due to exciton–exciton interaction, and the shortest decay time is below 1 ps. Our results may imply the potential application of optical nonlinearity of weakly confined exciton to ultrafast switching devices operating at 1 Tbit/s.     

High intensity photoluminescence of microcrystalline CsPbBr3 films: Evidence for enhanced stimulated emission at room temperature

Photoluminescence of microcrystalline CsPbBr₃ films grown from the amorphous phase shows stimulated emission not only at cryogenic temperature but also at room temperature, in great contrast to the case for bulk CsPbBr₃ single crystals, where no stimulated emission occurs even at 4.2 K. This is the first demonstration of room temperature stimulated emission from metal halide compounds.The stimulated emission is so strong that single-path-light-amplification stimulated emission across the film thickness is observed at relatively low threshold excitation intensities of ∼50 kW cm⁻² at 77 K and ∼100 kW cm⁻² at 295 K suggesting a large optical gain. The physical origin of the stimulated emission is assigned as due to free exciton-free exciton inelastic collision. The large-gain mechanism is attributable to giant oscillator strength effect characteristic of excitonic superradiance recently reported in this issue.