Well-crystallized zinc oxide quantum dots with narrow size distribution

In this study, pulsed laser ablation, online annealing, and following size classification using a differential mobility analyzer (DMA) were employed to fabricate quantum dots (QDs) of zinc oxide (ZnO). The irregularly shaped ZnO particles were obtained at annealing temperature less than 873 K, which gradually transformed into spherical QDs with increasing the annealing temperature. Finally, ZnO QDs with narrow size distribution having spherical shapes were successfully obtained at temperatures above 1173 K under the DMA classification at a nominal size of 10 nm. TEM observation demonstrated that the ZnO QDs obtained by this process were well-crystallized single crystallites with a wurtzite structure. Further, ZnO QDs with average sizes in the range of 4.8–8.1 nm were successfully fabricated by reducing the specified sizes of DMA. These features of the fabricated ZnO QDs are favorable for investigation of intrinsic quantum size effect in ZnO.     

Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots

The properties of ZnO quantum dots (QDs) synthesized by the sol-gel process are reported. The primary focus is on investigating the origin of the visible emission from ZnO QDs by the annealing process. The X-ray diffraction results show that ZnO QDs have hexagonal wurtzite structure and the QD diameter estimated from Debye-Scherrer formula is 8.9 nm, which has a good agreement with the results from transmission electron microscopy images and the theoretical calculation based on the Potential Morphing Method. The room-temperature photoluminescence spectra reveal that the ultraviolet excitation band has a red shift. Meanwhile, the main band of the visible emission shifts to the green luminescence band from the yellow luminescence one with the increase of the annealing temperature. A lot of oxygen atoms enter into Zn vacancies and form oxygen antisites with increasing temperature. That is probably the reason for the change of the visible emission band.     

Effect of thermal annealing in the microstructural and the optical properties of uncapped InAs quantum dots grown on GaAs buffer layers

The effect of thermal annealing on self-assembled uncapped InAs/GaAs quantum dots (QDs) has been investigated using transmission electron microscopy (TEM) and photoluminescence (PL) measurements. The TEM images showed that the lateral sizes and densities of the InAs QDs were not changed significantly up to 650 °C. When the InAs/GaAs QDs were annealed at 700 °C, while the lateral size of the InAs QDs increased, their density decreased. The InAs QDs disappeared at 800 °C. PL spectra showed that the peaks corresponding to the interband transitions of the InAs QDs shifted slightly toward the high-energy side, and the PL intensity decreased with increasing annealing temperature. These results indicate that the microstructural and the optical properties of self-assembled uncapped InAs/GaAs can be modified due to postgrowth thermal annealing.     

A sol-gel method for preparing ZnO quantum dots with strong blue emission

ZnO quantum dots (QDs) with strong blue emission have been successfully synthesized by sol-gel method, and their crystal structures, sizes, and photoluminescence properties were characterized by X-ray diffractometer, scanning electron microscope, and ultraviolet-visible spectroscopy. It has been found that ZnO QDs had a hexagonal wurtzite crystal structure, and their average diameter was about 16.0-32.2 nm. Both the reaction time and temperature were found to have a strong influence on the average size and photoluminescence properties of ZnO QDs. Longer reaction time and higher reaction temperature resulted in larger average size for ZnO QDs. It has been shown that at reaction temperature 60 °C the emission intensity for ZnO QDs increased first with reaction time before 7 h and then decreased after 7 h. For the same reaction time 7 h, ZnO QDs synthesized at 60 °C showed the strongest emission intensity. It was found that annealing in nitrogen, vacuum, and air all resulted in an increase of the size of ZnO QDs and a reduction in their photoluminescence. The dependence of the size and properties of ZnO QDs on the reaction parameters as well as the annealing conditions has been discussed.     

A comprehensive study of the effect of <Emphasis Type="Italic">in situ</Emphasis> annealing at high growth temperature on the morphological and optical properties of self-assembled InAs/GaAs QDs

We investigate the effect of in situ annealing during growth pause on the morphological and optical properties of self-assembled InAs/GaAs quantum dots (QDs). The islands were grown at different growth rates and having different monolayer coverage. The results were explained on the basis of atomic force microscopy (AFM) and photo-luminescence (PL) measurements. The studies show the occurrence of ripening-like phenomenon, observed in strained semiconductor system. Agglomeration of the self-assembled QDs takes place during dot pause leading to an equilibrium size distribution. The PL properties of the QDs are affected by the Indium desorption from the surface of the QDs during dot pause annealing at high growth temperature (520°C) subsiding the effect of the narrowing of the dot size distribution with growth pause. The samples having high monolayer coverage (3.4 ML) and grown at a slower growth rate (0.032 ML s⁻¹) manifested two different QD families. Among the islands the smaller are coherent defect-free in nature, whereas the larger dots are plastically relaxed and hence optically inactive. Indium desorption from the island surface during the in situ annealing and inhomogeneous morphology as the dots agglomerate during the growth pause, also affects the PL emission from these dot assemblies.     

Density controllable growth of ZnO quantum dots by MOCVD

High quality self-assemble ZnO quantum dots (QDs) have been successfully grown on the Si(111) substrates by metalorganic chemical vapor deposition (MOCVD). The diameter of ZnO QDs is about 10 nm in average, and the densities and the sizes of ZnO QDs can be well controlled by adjusting the growth temperature, which were evident in the SEM images. The properties and stress involved in ZnO QDs are studied by X-ray diffraction. In addition, room temperature photoluminescence spectra reveal that the ZnO QDs exhibit a band gap blue shift because of the quantum confinement effects.     

Synthesis of ZnO quantum dots and their agglomeration mechanisms along with emission spectra based on ageing time and temperature

The ZnO quantum dots (QDs) were synthesized with improved chemical solution method. The size of the ZnO QDs is exceedingly uniform with a diameter of approximately 4.8 nm, which are homogeneously dispersed in ethanol. The optical absorption edge shifts from 370 nm of bulk material to 359 nm of QD materials due to the quantum size effect, while the photoluminescence peak shifts from 375 nm to 387 nm with the increase of the density of ZnO QDs. The stability of ZnO QDs was studied with different dispersion degrees at 0 ℃ and at room temperature of 25 ℃. The agglomeration mechanisms and their relationship with the emission spectra were uncovered for the first time. With the ageing of ZnO QDs, the agglomeration is aggravated and the surface defects increase, which leads to the defect emission.     

Effect of GaAs(1 0 0) 2° surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots

The influence of GaAs(1 0 0) 2° substrate misorientation on the formation and optical properties of InAs quantum dots (QDs) has been studied in compare with dots on exact GaAs(1 0 0) substrates. It is shown that, while QDs on exact substrates have only one dominant size, dots on misoriented substrates are formed in lines with a clear bimodal size distribution. Room temperature photoluminescence measurements show that QDs on misoriented substrates have narrower FWHM, longer emission wavelength and much larger PL intensity relative to those of dots on exact substrates. However, our rapid thermal annealing (RTA) experiments indicate that annealing shows a stronger effect on dots with misoriented substrates by greatly accelerating the degradation of material quality.     

ZnO@GQDs核壳结构量子点的制备及性能研究

采用原位聚合法制备了以ZnO量子点为核、石墨烯量子点（GQDs）为壳的ZnO@ GQDs核壳结构量子点。通过TEM和HR-TEM对量子点进行形貌和结构的分析表征。结果表明,合成的ZnO@ GQDs核壳结构量子点为球形,粒径为～7 nm,且尺寸均匀。PL光谱研究表明,新型量子点的发射峰位于369 nm,发光峰窄、强度高;相对于ZnO的本征发射峰,GQDs的引入使得ZnO@GQDs核壳量子点的荧光发射峰出现蓝移、强度变高,从而使复合量子点的荧光具有较纯的色度和较高的强度,说明GQDs的引入具有协同优化效应。该量子点有望应用于LED显示器件。     

Quantum rings formed in InAs QDs annealing process

InAs quantum dots (QDs) were grown by molecular beam epitaxy in the Stranski-Krastanow growth mode. The samples were placed between two undoped GaAs slices and annealed in nitrogen ambient at different temperature. Effect of annealing temperature on the evolution of QDs morphology is investigated by the AFM. This behavior can be attributed to the mechanisms of QDs ripening, intermixing and segregation in the annealing process. A number of QDs have evoluted into the uniform distribution quantum rings (QRs) when the sample was annealed at the temperature of 800 °C. The results indicated that high density and uniform QRs can be obtained by the post-growth technique.     

Co-sensitized quantum dot solar cell based on ZnO nanowire

An efficient photoelectrode is fabricated by sequentially assembled CdS and CdSe quantum dots (QDs) onto a ZnO-nanowire film. As revealed by UV-vis absorption spectrum and scanning electron microscopy (SEM), CdS and CdSe QDs can be effectively adsorbed on ZnO-nanowire array. Electrochemical impedance spectroscopy (EIS) measured demonstrates that the electron lifetime for ZnO/CdS/CdSe (13.8 ms) is calculated longer than that of ZnO/CdS device (6.2 ms), which indicates that interface charge recombination rate is reduced by sensitizing CdSe QDs. With broader light absorption range and longer electron lifetime, a power conversion efficiency of 1.42% is achieved for ZnO based CdS/CdSe co-sensitized solar cell under the illumination of one Sun (AM 1.5G, 100 mW cm⁻²).     

Photoluminescence from Zinc Oxide Quantum Dots Embedded in Silicon Dioxide Matrices

ABSTRACT

ZnO quantum dots (QDs) embedded in SiO₂ matrix are fabricated by ion implantation and annealing treatment methods. When the Zn-doping dose is (2, 3, 5, and 7) × 10¹⁶ cm^?2, the size of quantum dots is in the range of ～4–10 nm in diameter according to the XRD and HR-TEM results. Ultraviolet and green light emissions from the specimen are obtained at room temperature. With the increase of the Zn-doping dose, the PL peak in the ultraviolet region red shifts from 3.32 to 3.10 eV. This PL peak is related to the size of ZnO QDs, which is ascribed to the free exciton recombination in QDs. The green light emissions centered at 2.43 and 2.25 eV are independent of the Zn-doping dose and annealing temperature, which are attributed to the deep-level defect and the small peroxy radical (SPR) defect, respectively.     

Effects of thermal annealing on the interband transitions of single and vertically stacked InAs/GaAs self-assembled quantum dots

Photoluminescence (PL) measurements have been carried out to investigate the annealing effects in one-period and three-periods of InAs/GaAs self-assembled quantum dots (QDs) grown on GaAs substrates by using molecular beam epitaxy. After annealing, the PL spectra for the annealed InAs/GaAs QDs showed dramatic blue shifts and significant linewidth narrowing of the PL peaks compared with the as-grown samples. The variations in the PL peak position and the full width at half-maximum of the PL peak are attributed to changes in the composition of the InAs QDs resulting from the interdiffusion between the InAs QDs and the GaAs barrier and to the size homogeneity of the QDs. These results indicate that the optical properties and the crystal qualities of InAs/GaAs QDs are dramatically changed by thermal treatment.     

Mechanism for coarsening of P-mediated Ge quantum dots during in-situ annealing

The coarsening of phosphorus-mediated Ge quantum dots (QDs) on Si(0 0 1) during in-situ annealing at 550 °C is studied. In-situ annealing makes the as-grown sample morphology be remarkably changed: the larger dots are formed and the dot density is greatly reduced. The results of chemical etching and Raman spectra reveal that the incorporation of Ge atoms which originate from the diminishing dots, rather than substrate Si atom incorporation is responsible for the dot coarsening at the incipient stage of in-situ annealing. Besides, Raman spectra suggest that the larger dots formed during in-situ annealing are dislocated, which was confirmed by cross-sectional high-resolution electron microscopy observation. Through the generation of dislocations, the strain in the dots is relaxed by about 50%.     

Fluorescence Property of ZnO Nanoparticles and the Interaction with Bromothymol Blue

We synthesized ZnO quantum dots (QDs) simply in alcoholic solution, and investigated the interaction between ZnO QDs and bromothymol blue. The structural, morphological, size and spectral properties of ZnO QDs were studied. It was found that ZnO QDs were spherical nanoparticles in the crystal structure, and the average diameter of ZnO QDs was about 4.8 nm. The excitation and emission peaks were located at 346 nm and 520 nm, respectively, which were obtained on a common fluorophotometer. The quantum yield of ZnO QDs was obtained by using quinine sulfate as a reference reagent. In addition, the fluorescence of ZnO QDs can be quenched by bromothymol blue, and the quenching mechanism was proposed in a dynamic quenching mode.     

Effects of rapid thermal annealing on the optical properties of InAs/(In)GaAs quantum dots with different areal density

The effects of rapid thermal annealing on the optical properties of InAs/(In)GaAs quantum dots (QDs) with different areal density were investigated by photoluminescence (PL) measurement. The annealing results in PL peak energy blue-shift which strongly depends on QD areal density and capping layer. It is noticeable that low-density QDs and/or InGaAs-capped QDs are more sensitive to the annealing. We attribute the larger energy blue-shift from these samples to enhanced strain-driven diffusion and/or defect-assisted diffusion.     

Photosensitization of multiwalled carbon nanotube scaffolds with ZnO quantum dots for photovoltaic applications

In this article, we have decorated multiwalled carbon nanotubes (MWCNTs) scaffold with ZnO quantum dots (QDs, size in the range of 2.9–4.5 nm) and investigated their prospects for photovoltaic applications. ZnO QDs, in the present study, work as photosensitizer instead of electron transporting media as used in recent conventional strategic solar cells. ZnO QDs/MWCNTs composite shows an increased visible absorbance and quenching of the broad visible emission at around ~560 nm, while only ZnO QDs exhibit a strong visible emission. An efficient electron–hole separation facilitates an increase in the short-circuit current. These results show a possibility of developing a nontoxic, ZnO QDs sensitized MWCNTs composite-based photovoltaic solar cell.     

The improvement of InAs/GaAs quantum dot properties capped by Graphene

InAs self‐assembled quantum dots (QDs) were grown by molecular beam epitaxy on (001) GaAs substrate. Uncapped and capped QDs with GaAs and graphene layers were studied using atomic force microscopy and Raman spectroscopy. Graphene multi‐layer was grown by chemical vapor deposition and transferred on InAs/GaAs QDs. It is well known that the presence of a cap layer modifies the size, shape, and density of the QDs. According to the atomic force microscopy study, in contrast to the GaAs capped sample, which induce a dramatic decrease of the density and height of dots, graphene cap layer sample presents a slight influence on the surface morphology and the density of the islands compared with the uncapped one. The difference shown in the Raman spectra of the samples is due to change of strain and alloy disorder effects on the QDs. Residuals strain and the relaxation coefficients have been investigated. All results confirm the best crystalline quality of the graphene cap layer dots sample relative to the GaAs capped one. So graphene can be used to replace GaAs in capping InAs/GaAs dots. To our knowledge, such study has not been carried out until now. Copyright © 2013 John Wiley & Sons, Ltd.     

Photoluminescence quenching of CdTe/CdS core-shell quantum dots in aqueous solution by ZnO nanocrystals

Photoluminescence (PL) properties of 3-mercaptopropionic acid (MPA) coated CdTe/CdS core-shell quantum dots (QDs) in aqueous solution in the presence of ZnO colloidal nanocrystals were studied by steady-state and time-resolved PL spectroscopy. The PL quenching of CdTe/CdS core-shell QDs with addition of purified ZnO nanocrystals resulted in a decrease in PL lifetime and a small red shift of the PL band. It was found that CdTe(1.5 nm)/CdS type II core-shell QDs exhibited higher efficiency of PL quenching than the CdTe(3.0 nm)/CdS type I core-shell QDs, indicating an electron transfer process from CdTe/CdS core-shell QDs to ZnO nanocrystals. The experimental results indicated that the efficient electron transfer process from CdTe/CdS core-shell QDs to ZnO nanocrystals could be controlled by changing the CdTe core size on the basis of the quantum confinement effect.     

近红外波段InAs量子点结构与光学特性

采用分子束外延技术,分别在480,520℃的生长温度下,制备了淀积厚度2.7ML的InAs/GaAs量子点。用原子力显微镜对样品进行形貌测试和统计分布。结果表明,在相应的生长温度下,量子点密度分别为8.0×10¹⁰,5.0×10⁹cm^-2,提高生长温度有利于获得大尺寸的量子点,并且量子点按高度呈双模分布。结合光致发光谱的分析,在480℃的生长条件下,最近邻量子点之间的合并导致了量子点尺寸的双模分布;而在525℃的生长温度下,In偏析和InAs解析是形成双模分布的主要原因。