MOCVD外延Hg1-xCdxTe/Cd1-yZnyTe薄膜的光致发光

利用Raman显微镜系统对两块用MOCVD方法在Cd_0.96Zn_0.04Te衬底上生长的Hg_0.8Cd_0.2Te外延薄膜样品在光谱范围50～5000cm^-1进行了测量,在其中的一块样品上首次发现了143eV至193eV范围内出现的具有周期结构的光致发光峰,该发光峰对应的能带中心位于Hg_0.8Cd_0.2Te外延层导带底上方173eV,在另外一块外延薄膜样品中仅观察到四个Raman散射峰,没有周期结构的发光峰。为了分析上述光致发光的起因,对两块样品进行了X射线的双晶回摆曲线样品结构分析,得出样品在143eV至193eV范围的光致发光峰是由于改进MOCVD生长工艺提高了样品的结构质量所致,通过分析指出该光致发光峰是来源于Hg_0.8Cd_0.2Te外延层中的阴性离子空位的共振能级。     

大气中长期存放与长时间热氧化后多孔硅光致发光峰能量的会聚

改变阳极氧化的工艺条件,制备出光致发光峰能量位于1.4—2.0eV范围内的大量多孔硅样品,其中45块样品在大气中存放一年,102块样品在200℃下热氧化(累计达200小时).在上述两种情况下,光致发光峰能量在氧化后都会聚到1.70—1.75eV能量范围.假设在充分氧化的多孔硅中包裹纳米硅的氧化层中,存在发光能量处于～1.70—1.75eV的发光中心,上述实验结果可以用量子限制/发光中心模型解释. 关键词：     

Bi2Sr2CaCu2-xLixOy体系的光电子能谱研究

采用X射线光电子能谱对Bi₂Sr₂CaCu_2-xLi_xO_y体系在真空中获得的清洁表面进行了研究。结果表明:Li的掺入对Bi和Sr的化学键性质几乎没有影响,而Ca,Cu,O的化学键性质有较大的变化,其结合能随着Li含量x的增加向高能方向移动。同时对真空中获得的清洁表面和普通表面样品O1s进行了比较,结果发现真空中获得的清洁样品O1s有一个峰(528.4eV),而普通表面样品O1s有两个峰(528.4eV)和(531eV),这表明O1s的高能峰是由污染产生的。 关键词：     

ZnO/p-Si异质结的深能级及其对发光的影响

利用深能级瞬态谱(DLTS)和光致发光谱(PL),研究了ZnO/pSi异质结的两种不同温度(850℃,1000℃)退火下的深能级中心。发现850℃退火的样品存在3个明显的深中心,分别为E₁=E_v+0.21eV,E₂=E_v+0.44eV,E₃=E_v+071eV;而1000℃退火样品仅存在一个E₁=E_v+021eV的中心,且其隙态密度要比850℃退火的大。同时,测量了两个样品的PL谱。发现1000℃退火可消除一些影响发光强度的深能级,对改善晶格结构,提高样品的发光强度有利。     

非晶Fe82Si5B13合金的磁导率驰豫

在0—300℃范围内考查了非晶Fe₈₂Si₅B₁₃合金的磁导率等温弛豫动力学行为,给出了等时弛豫谱,观察到四个弛豫峰。测量表明,总的磁导率弛豫由两种弛豫过程组成,即对于退磁可逆的普通减落和对于退磁不可逆的磁导率连续衰减。计算了弛豫时间和激活能的分布,表明弛豫时间和激活能有宽的分布。普通减落和磁导率衰减过程的最可几激活能分别为1.0eV和1.4eV。对退火的样品,观察到磁导率先是增大而后是衰减的广义cross-over效应。 关键词：     

MOCVD外延Hg_(1-x)Cd_xTe/Cd_(1-y)Zn_yTe薄膜的光致发光

利用Raman显微镜系统对两块用MOCVD方法在Cd0 96Zn0 0 4 Te衬底上生长的Hg0 8Cd0 2 Te外延薄膜样品在光谱范围 5 0～ 5 0 0 0cm-1进行了测量 ,在其中的一块样品上首次发现了 1 4 3eV至 1 93eV范围内出现的具有周期结构的光致发光峰 ,该发光峰对应的能带中心位于Hg0 8Cd0 2 Te外延层导带底上方 1 73eV ,在另外一块外延薄膜样品中仅观察到四个Raman散射峰 ,没有周期结构的发光峰。为了分析上述光致发光的起因 ,对两块样品进行了X射线的双晶回摆曲线样品结构分析 ,得出样品在 1 4 3eV至 1 93eV范围的光致发光峰是由于改进MOCVD生长工艺提高了样品的结构质量所致 ,通过分析指出该光致发光峰是来源于Hg0 8Cd0 2 Te外延层中的阴性离子空位的共振能级。     

高温退火后非掺杂磷化铟材料的电子辐照缺陷

对不同气氛下高温退火非掺杂磷化铟(InP)材料的电子辐照缺陷进行了研究. 除铁受主外，磷化铁(FeP₂)气氛下退火后的InP中辐照前没有深能级缺陷，而辐照后样品的热激电流谱(TSC)中出现了5个较为明显的缺陷峰，对应的激活能分别为0.23 eV, 0.26 eV, 0.31 eV, 0.37 eV和0.46 eV. 磷(P)气氛下退火后InP中的热生缺陷较多，电子辐照后形成的缺陷具有复合体特征. 与辐照前相比，辐照后样品的载流子浓度和迁移率产生显著变化. 在同样的条件下，经FeP₂ 气氛下高温退火后的InP样品的辐照缺陷恢复速度较快. 根据这些现象分析了缺陷的属性、快速恢复机理和缺陷对材料电学性质的影响. 关键词： 磷化铟 电子辐照 缺陷     

Co-Zr非晶薄膜的磁感生各向异性

利用射频溅射法制得的Co₉₁Zr₉和Co₈₆Zr₁₄两种成分的样品,对其感生各向异性在等温退火时的再取向作了详细研究。发现其热稳定性随含Zr量的增加而提高,求得其激活能分别为1.7eV和2.5eV。并对其感生各向异性随含非磁性金属原子的增加而下降的现象给出一个新解释。 关键词：     

纳米锗颗粒镶嵌薄膜的荧光特性研究

研究了不同颗粒尺寸的纳米Ge-SiO₂镶嵌薄膜的室温荧光光谱以及不同激发光能量对荧光峰的影响．实验结果表明，沉积态Ge-SiO₂薄膜样品在可见光区域不发光．退火后的样品（平均锗颗粒尺寸为3.2—6.0nm）在380—520nm波长范围内有明显的蓝光发射现象．当用λ=300nm的光激发，观测到中心波长为420nm（2.95eV）的光致荧光峰；而用633nm波长的光激发，谱图上出现中心波长分别为420和470nm的两个荧光峰．随着纳米锗颗粒尺寸的增加，光致荧光峰的相 关键词：     

快冷Fe71Al29合金中的两个内耗峰

用一个计算机控制的倒扭摆研究了快冷Fe71Al29合金中的两个内耗峰.在快冷的Fe71Al29样品中分别在180℃(P1)，340 ℃(P2)和510℃(P3)出现了内耗峰，而在慢冷的Fe71Al29样品中只发现了P3峰.快冷样品中的P1和P2峰在从650℃冷却下来的测量过程中或在350℃经过较长时间的时效后消失，其峰高随时效时间的增加 而下降，直至消失.P1和P2峰都有弛豫特征，它们的激活能分别为：H1=1．03±0．08eV(P1峰)；H2=1．64±0．05eV(P2峰).P1峰被认为是无序合金中Al原子在四面体点阵内的最近邻运动所引起，P2峰则是无序合金中Al原子在四面体点阵内的次近邻运动所引起. 关键词： Fe-Al合金 内耗     

Characteristic energy losses on carbon contaminated layers correlated with secondary electron,auger electron emission and contrasts in scanning microscope

The secondary electron (SE) spectrum (0 < E < 50 eV) has been analysed by means of a CMA. Samples were clean aluminum, aluminum becoming carbon contaminated, sintered graphite powder, electro chemically deposited polymer on platinum and monocrystals of silicon carbon contaminated. When the clean Al surface is becoming carbon contaminated a quick decrease of surface plasmon and bulk plasmon losses is observed whereas a main characteristic energy loss peak (ELS) at 20 eV and a secondary electron peak at 20 eV appear simultaneously. Both peaks are very sensitive general features of carbon contaminated surfaces. The main loss peak is attributed to the excitation of the carbon-carbon bounds (σ → σ¹) as already proposed in the transmission ELS. The few eV change of the loss peak energy of various carbon compounds may correspond to slightly different carbon-carbon distances. The 20 eV secondary electrons could be produced by the relaxation of the excited state (σ¹ → σ transition) via an Auger process. The cross section for molecular electronic excitation is higher than that of atomic ionization for inner level. The loss peak is as intense as the SE peak and higher by more than two orders of magnitude than the C KLL Auger peak. The modification of secondary emission under carbon contamination has been observed on a silicon sample by Scanning Electron Microscopy (SEM) in the Secondary Electron Image (SEI) mode.     

Effect of cascade gamma-radiation summation processes on the precision of calculating the probability of three-photon annihilation of positronium

The processes of cascade gamma-quanta summation, disregarded when measuring the energy spectrum of ²²Na in samples by a one-detector spectrometer, are studied, along with the effect of these processes on the change in the area bounded by the 511-keV annihilation line in the calculation of the probability P _3γ of three-photon annihilation of positronium. An increase in the number of annihilation quanta in “positronium-forming” samples and their redistribution to the low-energy spectral region are responsible for the difference between the areas of the photopeak of the accompanying nuclear quantum, with respect to which the spectra are normalized, and of the corresponding peak in the aluminum standard. The departure of the real value of P _3γ from its value, determined without taking into account the summation processes on a highly effective scintillation NaI(T1) detector and a semiconducting Ge detector, amounts to 56 and 25%, respectively, for a distance of 3 cm between the positronium source and the detector surface.     

Determination of the vacancy formation energy for different sublattices of ordered β-CuZn alloy by positron annihilation method

The temperature dependence of positron annihilation has been investigated for samples of the ordered β-CuZn alloy with different crystallographic orientations. The results obtained have been interpreted on the basis of the extended trapping model. Analysis of the temperature dependence of the peak coincidence count gives the values of the free energy of formation for vacant sites, left by Cu- and Zn atoms equal 0.58±0.02 eV and 0.77±0.04 eV, respectively. The dependence of the vacancy formation energy on the long-range order parameter has not been observed.     

UV cathodoluminescence of crystalline α-quartz at low temperatures

Two luminescence bands in the UV range were detected in crystalline α-quartz under electron beam excitation (6 kV, 3-5 μA). One band is situated at 5 eV and could be observed in pure samples. Its intensity increases with cooling below 100 K and undergoes saturation below 40 K alongside a slow growth with the time of irradiation at 9 K. The decay curve of the band at 5 eV contains two components, a fast (<10 ns) and a slow one in the range of 200 μs. The photoluminescence band at 5 eV with a similar temperature dependence was found in previously neutron-irradiated crystalline α-quartz. Therefore, the band at 5 eV was attributed to host material defects in both irradiation cases. The creation mechanism of such defects by electrons, the energy of which is lower than the threshold for a knock-out mechanism of defect creation, is discussed. Another band at 6 eV, containing subbands in different samples, appears in the samples containing aluminum, lithium and sodium ions. This luminescence is ascribed to a tunnel radiative transition in an association of (alkali atom)⁰-[AlO₄]⁺ that is formed after the trapping of an electron and a hole by Li⁺ (or Na⁺) and AlO₄.     

Intense blue luminescence of anodic aluminum oxide

The luminescence spectra of aluminum oxide with an ordered system of through pores have been studied. The diameter and density of pores were ≈ 50 nm and 1.2 × 10¹⁰ cm^?2, respectively. Amorphous aluminum oxide formed by anodization of aluminum foil in an oxalic acid electrolyte shows intense luminescence in the blue spectral region. Processing of spectra with the use of an oxalic acid approximation by Gaussian curves gives three bands peaking at ～ 382 (3.2 eV), 461 (2.7 eV), and 500 nm (2.5 eV), which correspond to different types of defects. The bands at 382 and 461 nm can be assigned to optical transitions involving F⁺ and F centers (vacancies of oxygen with one or two electrons), respectively. The lower-energy band near 500 nm can be presumably assigned to luminescence from F⁺⁺ centers (vacancy of oxygen without an electron). Analysis of the luminescence excitation spectra has revealed an inhomogeneous character of the distribution of the corresponding luminescence centers in the Al₂O₃ matrix.     

Photodesorption studies of adsorbate covered aluminum surfaces

Strong low photon energy photodesorption has been observed from aluminum samples exposed to CO and CO₂ and on aluminum oxide samples with carbon contamination. For these systems only CO₂ has been observed to photodesorb with similar energy thresholds (≈ 3.65 eV) and similar yields (≈ 5 × 10⁻⁵ molecules/photon) for all samples. The data does not support the band-gap mechanism for desorption from semiconductors/insulators.     

Electron emission from crystal surfaces of condensed aromatics under the impact of metastable rare gas atoms

Energy distributions of electrons ejected from polycrystalline surfaces of naphthacene, perylene and coronene by the impact of metastable He ^*, Ne ^* and Ar ^* atoms have been measured. Two types of peaks, which are similar to the “non-moving” and “moving” structures in photoelectron spectra, are observed in each spectrum. The non-moving structures (ca. 1 eV) for perylene and coronene are similar to those in the photoelectron spectra, whereas the relative intensities of the two non-moving structures for naphthacene (0.6 and 1.7 eV) are remarkably different from the corresponding structures in the photoelectron spectrum. The peak positions (but not necessarily their intensities and widths) for the moving structures for all the samples (> 2 eV) agree with those of the corresponding photoelectron spectra. The origin of these moving structures is ascribed to Penning ionization on the solid surface.     

Defect assisted intrinsic luminescence in Al2O3 crystals

Abstract

The origin of the luminescence bands at 7.5 eV anv 3.8 eV appearing additionaly to the luminescence of F- and F⁺- centres in pure Al₂O₃ are investigated. The time - resolved luminescence spectra, absorption and luminescence excitation spectra as well as trap spectroscopy data depending on deviation from the stochiometry of crystals are discussed in terms of self - trapping of excitons in two configurations. The role of defects due to annihilation of excitons is considered.     

Investigations of positronium formation and destruction using 3gamma/2gammaannihilation-ratio measurements

Positronium (Ps) produced by 4 to 40 eV positrons colliding with Ne, Ar, Kr, CO2, and O2 is investigated by measuring the ratio of signals of two gamma rays in coincidence resulting from (a) three gamma annihilation of ortho-Ps and (b) two annihilation gamma rays due to para-Ps decay and destruction of ortho-Ps at an aluminum scattering cell surface. These ratios provide evidence that relates to the kinetic energy dependence of ortho-Ps interactions with an aluminum surface, the Ps formation potential at this surface, and the fact that Ps is being formed with inner orbital electrons for CO2 and O2.     

Phase transformations and vacancy formation energies of transition metals by positron annihilation

The technique of the coincidence count rate at the peak of the angular correlation curve (CCR) in positron annihilation has been applied to the investigation of vacancy formation energies in thermal equilibrium in nickel, cobalt, and iron. The monovacancy formation energyE ^1v/F has been determined to (1.55±0.05) eV and (1.34±0.07) eV for nickel and cobalt, and (1.60±0.10) eV for α-iron, and (1.40±0.15) eV for γ-iron, respectively. The structural phase transformations in cobalt (693 K) and iron (1183 K, 1663 K) are exhibited by discontinuities of the CCR. In the case of cobalt the CCR follows exactly the change of the thermal expansion at the transition temperature. The temperature dependence of the CCR in the prevacancy region is found to be proportional to the thermal expansion for all metals investigated.