Quantitative depth profiling by laser-ionization sputtered neutral mass spectrometry

Depth profiling by laser-ionization sputtered neutral mass spectrometry (SNMS) is reviewed. The matrix effects, including surface and interface effects, in laser-ionization SNMS and secondary ion mass spectrometry (SIMS) are compared with each other and discussed. Laser-ionization SNMS can provide depth profiles with much smaller matrix effects than conventional SIMS. Depth resolution can effectively be improved by using grazing incidence for the primary ion beam with little interfacial effect. The quantification method in laser-ionization SNMS is also mentioned.     

A simple erosion dynamics model of molecular sputter depth profiling

A simple model which describes the essential features commonly observed in a molecular sputter depth profile is presented. General predictions of the dependence of measured molecular ion signals on the primary ion fluence are derived for the specific case where a mass spectrometric technique such as SIMS or secondary neutral mass spectrometry (SNMS) is used to analyze the momentary surface. The results are compared with recent experimental data on molecular depth profiles obtained by cluster‐ion‐initiated SIMS of organic overlayers. Copyright © 2008 John Wiley & Sons, Ltd.     

Enhanced surface sensitivity in secondary ion mass spectrometric analysis of organic thin films using size‐selected Ar gas‐cluster ion projectiles

A size‐selected argon (Ar) gas‐cluster ion beam (GCIB) was applied to the secondary ion mass spectrometry (SIMS) of a 1,4‐didodecylbenzene (DDB) thin film. The samples were also analyzed by SIMS using an atomic Ar⁺ ion projectile and X‐ray photoelectron spectroscopy (XPS). Compared with those in the atomic‐Ar⁺ SIMS spectrum, the fragment species, including siloxane contaminants present on the sample surface, were enhanced several hundred times in the Ar gas‐cluster SIMS spectrum. XPS spectra during beam irradiation indicate that the Ar GCIB sputters contaminants on the surface more effectively than the atomic Ar⁺ ion beam. These results indicate that a large gas‐cluster projectile can sputter a much shallower volume of organic material than small projectiles, resulting in an extremely surface‐sensitive analysis of organic thin films. Copyright © 2010 John Wiley & Sons, Ltd.     

Depth profile analysis of thin film solar cells using SNMS and SIMS

SNMS (sputtered neutrals mass spectrometry) and SIMS (secondary ion mass spectrometry) are used for the depth profile analysis of thin film solar cells based on amorphous silicon. In order to enhance depth resolution, model systems are analyzed only representing parts of the layered system. Results concerning the TCO (transparent conducting oxide)/p interface and the n/i interface are presented. To minimize matrix effects, SNMS is used when the sample consists of layers with different matrices. Examples are the TCO/p interface (where the transition lengths of the depth profiles are found to be sharper when ZnO is used as TCO compared to SnO₂) and SnO₂/ZnO interfaces in coated TCO layers (where a Sn contamination inside the ZnO layer is found depending on the plasma pressure during the ZnO deposition). SIMS is used when the limits of detection reached by SNMS are not sufficient. Examples are H depth profiles in ZnO layers or P depth profiles near the n/i-interface.     

Atom probe mass spectrometry

Round-robin characterization is reported on the sputter depth profiling of CrN/AlN multilayer thin-film coatings on nickel alloy by secondary ion mass spectrometry (SIMS) and glow-discharge optical emission spectrometry (GD-OES). It is demonstrated that a CAMECA SIMS 4550 Depth Profiler operated with 3 keV O₂⁺ primary ions provides the best depth resolution and sensitivity. The key factor is sample rotation, which suppresses the negative influence of the surface topography (initial and ion-induced) on the depth profile characteristics.     

Operation and application of a new time-of-flight e-gas secondary neutral mass spectrometer (ToF–SNMS)

The low-pressure rf plasma of a secondary neutral mass spectrometer (e-gas SNMS) was connected with a time-of-flight (ToF) mass spectrometer for the first time. As opposed to ToF–SIMS in e-gas SNMS, the primary ion pulse cannot be used for triggering the flight time measurement. Therefore, an extraction pulse is used which at a defined time loads an ion package from the beam of the post-ionised particles into the ToF spectrometer. The newly developed ToF–SNMS system is described, and first experimental results are presented.     

Multilayer thin-film coatings based on chromium nitride and aluminum nitride: Comparative depth profiling by secondary ion mass spectrometry and glow-discharge optical emission spectrometry

Round-robin characterization is reported on the sputter depth profiling of CrN/AlN multilayer thin-film coatings on nickel alloy by secondary ion mass spectrometry (SIMS) and glow-discharge optical emission spectrometry (GD-OES). It is demonstrated that a CAMECA SIMS 4550 Depth Profiler operated with 3 keV O ₂ ⁺ primary ions provides the best depth resolution and sensitivity. The key factor is sample rotation, which suppresses the negative influence of the surface topography (initial and ion-induced) on the depth profile characteristics.     

Characterization of high explosive particles using cluster secondary ion mass spectrometry

The use of secondary ion mass spectrometry (SIMS) for the detection and spatially resolved analysis of individual high explosive particles is described. A C(8) (-) carbon cluster primary ion beam was used in a commercial SIMS instrument to analyze samples of high explosives dispersed as particles on silicon substrates. In comparison with monatomic primary ion bombardment, the carbon cluster primary ion beam was found to greatly enhance characteristic secondary ion signals from the explosive compounds while causing minimal beam-induced degradation. The resistance of these compounds to degradation under ion bombardment allows explosive particles to be analyzed under high primary ion dose bombardment (dynamic SIMS) conditions, facilitating the rapid acquisition of spatially resolved molecular information. The use of cluster SIMS combined with computer control of the sample stage position allows for the automated identification and counting of explosive particle distributions on silicon surfaces. This will be useful for characterizing the efficiency of transfer of particulates in trace explosive detection portal collectors and/or swipes utilized for ion mobility spectrometry applications.     

Examinations regarding the correctness of quantitative surface analysis using SNMS

Summary For the assessment of the correctness of depth profile analyses with non-ideal technical metal surfaces using secondary neutral particle mass spectrometry (SNMS), the roughness of the sample surface was examined for the transition width of the signal. It is shown that with elements with low sputter rates (Al Mn), similar to that of the substrate element (Fe), there is no significant influence of the roughness. However, clear dependencies are observed for tin and zinc, elements with high sputter rates. Whereas tin gave acceptable results when the roughness was significant, cone formation was observed with zinc which caused abnormal sputter behaviour. The use of high-frequency sputter processes eliminates this cone formation and leads to constant signals, even with thick zinc layers. This method is therefore not only suitable for use with non-conductors, as originally planned, but also offers considerable advantages in the analysis of metal coatings.     

Ion-beam analysis of CuInSe<Subscript>2</Subscript> solar cells deposited on polyimide foil

CuInSe₂ (CIS) solar cells deposited on polyimide foil by the Solarion company in a web-coater-based process using sputter and evaporation techniques were investigated in the ion beam laboratory LIPSION of the University of Leipzig by means of Rutherford backscattering spectrometry (RBS) and particle-induced X-ray emission (PIXE) using high-energy broad ion beams and microbeams. From these measurements the composition of the absorber and the lateral homogeneity and film thicknesses of the individual layers could be determined on the basis of some reasonable assumptions. For the first time, quantitative depth profiling of the individual elements was performed by microPIXE measurements on a beveled section prepared by ion-beam etching of a CIS solar cell. Within the CIS absorber layer no significant concentration–depth gradients were found for Cu, In, and Se, in contrast with results from secondary neutral mass spectrometry (SNMS) depth profiling, which was applied to the same samples for comparison. Furthermore, both PIXE and SNMS showed the presence of a remarkable amount of Cd from the CdS buffer layer in the underlying absorber.     

Comparative studies of MCs+-SIMS and e?-beam SNMS for quantitative analysis of bulk materials and layered structures

For the quantification of heterostructure depth profiles the knowledge of relative sensitivity factors (RSF) and the influence of matrix effects on the measured profiles is necessary. Matrix dependencies of the measured ion intensities have been investigated for sputtered neutral mass spectrometry (SNMS) and MCs⁺-SIMS. The use of Cs as primary ions for SNMS is advantageous compared to Ar because the depth resolution is improved without changing RSFs determined under Ar bombardment. No significant amount of molecules has been found in the SNMS spectra under Cs bombardment. Using MCs⁺-SIMS the RSFs are matrix dependent. An improvement of depth resolution can be achieved by biasing the sample against the primary ion beam for SNMS due to a reduction of the net energy of the primary ions and a resulting more gracing impact angle.     

Development of B‐doped Si multiple delta‐layer reference materials for SIMS profiling

B‐doped Si multiple delta‐layers (MDL) were developed as certified reference materials (CRM) for secondary ion mass spectrometry (SIMS) depth profiling analysis. Two CRMs with different delta‐layer spacing were grown by ion beam sputter deposition (IBSD). The nominal spacing of the MDL for shallow junction analysis is 10 nm and that for high energy SIMS is 50 nm. The total thickness of the film was certified by high resolution transmission electron microscopy (HR‐TEM). The B‐doped Si MDLs can be used to evaluate SIMS depth resolution and to calibrate the depth scale. A consistency check of the calibration of stylus profilometers for measurement of sputter depth is another possible application. The crater depths measured by a stylus profilometer showed a good linear relationship with the thickness measured from SIMS profiling using the calibrated film thickness for depth scale calibration. The sputtering rate of the amorphous Si thin film grown by sputter deposition was found to be the same as that of the crystalline Si substrate, which means that the sputtering rate measured with these CRMs can be applied to a real analysis of crystalline Si. Copyright © 2005 John Wiley & Sons, Ltd.     

Comparative studies of MCs+-SIMS and e–-beam SNMS for quantitative analysis of bulk materials and layered structures

For the quantification of heterostructure depth profiles the knowledge of relative sensitivity factors (RSF) and the influence of matrix effects on the measured profiles is necessary. Matrix dependencies of the measured ion intensities have been investigated for sputtered neutral mass spectrometry (SNMS) and MCs(+)-SIMS. The use of Cs as primary ions for SNMS is advantageous compared to Ar because the depth resolution is improved without changing RSFs determined under Ar bombardment. No significant amount of molecules has been found in the SNMS spectra under Cs bombardment. Using MCs(+)-SIMS the RSFs are matrix dependent. An improvement of depth resolution can be achieved by biasing the sample against the primary ion beam for SNMS due to a reduction of the net energy of the primary ions and a resulting more gracing impact angle.     

SIMS investigation of CrN sputtercoatings

Chromium nitride layers produced by reactive sputtering with different process parameters were characterized with EPMA, SIMS depth profiling, and three-dimensional SIMS imaging. EPMA results are used to quantify the major components of the films while SIMS is used to gather information about the distribution of the elements chromium, silicon, nitrogen, and oxygen. For all measurements a Cs+ primary ion beam was applied to sputter the sample. Positive MCs+ (M represents the element to be analyzed) secondary ions were detected. SIMS depth profiling shows an even distribution of all major elements except oxygen, which shows significant differences in concentration and distribution depending on the process parameters. CrN layers produced at low sputter power have much higher concentration of oxygen than layers produced with high sputter power. Heating the silicon substrate during the process results in an enrichment of oxygen at the interface.     

一种新型二次离子质谱的一次离子源及其离子光学系统

本研究设计了一种新型用于二次离子质谱的一次离子源及其离子光学系统.通过此一次离子源,大气压下产生的一次离子可以被加速、聚焦并传输到位于真空条件下的样品表面并电离样品得到可供质谱仪分析的二次离子.通过理论模拟结合实验系统研究了此一次离子源的主要组成部分——离子光学系统的原理、结构和性能.以电喷雾电离源为例,成功地将大气压...     

Higher sensitivity secondary ion mass spectrometry of biological molecules for high resolution, chemically specific imaging

To expand the role of high spatial resolution secondary ion mass spectrometry (SIMS) in biological studies, numerous developments have been reported in recent years for enhancing the molecular ion yield of high mass molecules. These include both surface modification, including matrix-enhanced SIMS and metal-assisted SIMS, and polyatomic primary ions. Using rat brain tissue sections and a bismuth primary ion gun able to produce atomic and polyatomic primary ions, we report here how the sensitivity enhancements provided by these developments are additive. Combined surface modification and polyatomic primary ions provided approximately 15.8 times more signal than using atomic primary ions on the raw sample, whereas surface modification and polyatomic primary ions yield approximately 3.8 and approximately 8.4 times more signal. This higher sensitivity is used to generate chemically specific images of higher mass biomolecules using a single molecular ion peak.     

Imaging of atomic and molecular species in tissue with laser‐SNMS for pharmaceutical studies

Successful anticancer therapies will have the ability to selectively deliver compounds to target cells while sparing normal tissue. Currently, methods to determine the distribution of compounds with very high sensitivity and subcellular resolution are still unavailable. Laser secondary neutral mass spectrometry (laser‐SNMS) and time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) are capable of detecting atoms and molecules with high sensitivity and a spatial resolution of up to 80 nm. The use of such methods requires special preparation techniques that preserve the morphological and chemical integrity of living cells. In this paper, the ability of laser‐SNMS to study transportation processes in animals of boron‐containing compounds for boron neutron capture therapy will be discussed. The data show that with laser‐SNMS it is possible to measure the distribution of these compounds in tissues with subcellular resolution, and that laser‐SNMS is a very powerful tool for locating anticancer drugs in tissues. Copyright © 2006 John Wiley & Sons, Ltd.     

Ga‐focused ion beam time‐of‐flight secondary ion mass spectrometer analysis of the grain boundary segregation/precipitation of boron in steel

Ga‐focused ion beam time‐of‐flight secondary ion mass spectrometry (FIB‐TOF‐SIMS) analysis was performed to investigate the grain boundary segregation/precipitation of boron in steel. To overcome the low secondary ion yield from the primary Ga⁺ source and the sensitivity using a high‐resolution Ga‐FIB source, a low energy oxygen ion beam was used prior to the Ga‐FIB‐TOF‐SIMS analysis. As a result, it was found that Ga‐FIB‐TOF‐SIMS is a very powerful tool for mapping boron segregation and/or precipitation in steel with a spatial resolution of ~200 nm. In addition, the results were strongly dependent on the surface composition. Copyright © 2014 John Wiley & Sons, Ltd.     

ToF-SIMS Depth Profiling of Trehalose: The Effect of Analysis Beam Dose on the Quality of Depth Profiles

In static secondary ion mass spectrometry (SIMS) experiments, an analysis dose of 10(12) ions/cm(2) typically produces optimum results. However, the same dose used in dual beam depth profiling can significantly degrade the signal. This is because during each analysis cycle a high-energy beam is rastered across the same x-y location on the sample. If a sufficient amount of sample is not removed during each sputter cycle, the subsequent analysis cycle will sample a volume degraded by the previous analysis cycles. The dimensionless parameter R' is used to relate the amount of damage accumulated in the sample to the amount of analysis beam dose used relative to the etching beam. Depth profiles from trehalose films spin-cast onto silicon wafers acquired using Bi(1) (+) and Bi(3) (+) analysis beams were compared. As R' increased, the depth profile and the depth resolution (interface width) both degraded. At R' values below 0.04 for both Bi(1) (+) and Bi(3) (+), the shape of the profile as well as the depth resolution (9 nm) indicated that dual beam analysis can be superior to C(60) single beam depth profiling.     

Extraction of hidden information of ToF‐SIMS data using different multivariate analyses

Time‐of‐flight secondary ion mass spectrometry (ToF‐SIMS) is a powerful tool for determining surface information of complex systems such as polymers and biological materials. However, the interpretation of ToF‐SIMS raw data is often difficult. Multivariate analysis has become effective methods for the interpretation of ToF‐SIMS data. Some of multivariate analysis methods such as principal component analysis and multivariate curve resolution are useful for simplifying ToF‐SIMS data consisting of many components to that explained by a smaller number of components. In this study, the ToF‐SIMS data of four layers of three polymers was analyzed using these analysis methods. The information acquired by using each method was compared in terms of the spatial distribution of the polymers and identification. Moreover, in order to investigate the influence of surface contamination, the ToF‐SIMS data before and after Ar cluster ion beam sputtering was compared. As a result, materials in the sample of multiple components, including unknown contaminants, were distinguished. Copyright © 2014 John Wiley & Sons, Ltd.