Structural and thermoelectric properties in (Sb<Subscript>1-x</Subscript>Bi<Subscript>x</Subscript>)<Subscript>2</Subscript>Te<Subscript>3</Subscript> thin films

We have investigated the structural and thermoelectric properties of (Sb_1-xBi_x)₂Te₃ thin films on CdTe(111)B. Analysis of X-ray diffraction patterns (–2 scans and rocking curves) of the films shows that they are of high quality and that they are well aligned with their (00.1) axis normal to the substrates. Measurements of the temperature-dependent thermoelectric power, resistivity, and Hall coefficient of the films were performed with respect to the binary composition, x. For the samples in the range 0.2<x<0.3, the room-temperature thermopower values were in the range 159–184 V/K, the room-temperature carrier concentrations were 3.93–5.13×10¹⁹ cm^-3, and the room-temperature mobilities were 24.6–64.0 cm²V^-1s^-1. PACS 72.20.Pa; 72.80.Jc; 73.6l.Le     

Influence of Ir substitution on the thermoelectric properties of Ba0.3(IrxCo1-x)4Sb12 solid solutions

Polycrystalline skutterudite solid solutions, Ba_0.3 (Ir_xCo_1-x)₄Sb₁₂ (x from 0 to 0.11), have been synthesized by a two-step solid state reaction method and sintered by a spark plasma sintering (SPS) technique. The influence of Ir substitution on electrical and thermal transport properties has been investigated in the temperature range of 300–850 K. Through Ir substitution, the lattice thermal conductivity was depressed due to the phonon scattering by point defects. The thermopower and thermoelectric power factor increased because of the enhancement of carrier acoustic lattice scattering especially at lower temperatures. Both the dimensionless figure of merit (ZT) and the thermoelectric compatibility factor (C_F), which play very important roles for applications, were improved over the whole temperature region. PACS 72.15.Eb; 72.15.Jf; 72.20.Pa; 63.20.Mt; 74.25.Fy An erratum to this article can be found at     

Investigations of dielectric enhancement in (Ta<Subscript>2</Subscript>O<Subscript>5</Subscript>)<Subscript>1-x</Subscript>(TiO<Subscript>2</Subscript>)<Subscript>x</Subscript> ceramics prepared by laser-sintering technique

The maximum dielectric permittivity of Ti-doped Ta₂O₅ ceramics may reach 450 by a laser-sintering technique. The aim of this study is to investigate the mechanisms of the dielectric enhancement based on the unique structural and morphological properties of the laser-sintered ceramics. The reason for the dielectric enhancement is due to the crystal structure distortion in the high-temperature phase, the oriented grain growth taking place in a direction deviating from [001] in the laser-sintered ceramics. The concurrent nature of quenching effects, a sharp temperature gradient and mass transfer in liquid phase originated from laser high energy irradiation with strict directivity leads to the structural and morphological properties. PACS 81.40.Tv; 61.80.Ba; 77.22.-d; 77.22.Ch     

Effect of conditions of preparation on the thermoelectric properties of solid solutions of Bi<Subscript>0.5</Subscript>Sb<Subscript>1.5</Subscript>Te<Subscript>3</Subscript>

The effect the conditions of preparing thermoelectric solid solutions of Bi_0.5Sb_1.5Te₃ + 0.06 wt % Pb by hardening from the liquid state with subsequent hot pressing have on their thermoelectric properties is studied. It is found that the optimum thermoelectric quality factors are achieved at a 2200–2800 rpm rate of copper disc rotation.     

Effect of Ba-substitution on the structure and properties of Pb<Subscript>0.8</Subscript>Ba<Subscript>0.2</Subscript>[(In<Subscript>1/2</Subscript>Nb<Subscript>1/2</Subscript>)<Subscript>1-x</Subscript>Ti<Subscript>x</Subscript>]O<Subscript>3</Subscript> ceramics

Ferroelectric ceramics with formula Pb_0.8Ba_0.2[(In_1/2Nb_1/2)_1-xTi_x]O₃ (PBINT) (x=0.0,0.1,0.2,0.3,0.4 and 0.5) were prepared via a two-step solid state reaction method. It was found that ceramics with compositions in the range of x=0.0∼0.3 showed a pseudo-cubic structure, whereas the ceramic with x=0.5 displayed a tetragonal structure. All compositions showed significant frequency dispersion in their dielectric properties. The remanent polarization P_r as well as the coercive field E_c, measured at room temperature, increases with the Ti content. The experimental results obtained in this system are summarized into a phase diagram, with the morphotropic phase boundary (MPB) located at x=0.4. Compared with the Pb[(In_1/2Nb_1/2)_1-xTi_x]O₃ solid solution system, incorporating Ba in the A-site leads to a significant decrease in the dielectric maximum temperature T_max, a suppression of the dielectric relaxation parameter γ, and a shift of the MPB composition to a higher Ti content. PACS 77.84.Dy; 77.80.Bh; 77.22.Ch     

Magnetic properties of DyFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript>

The magnetic properties of an easy-axis trigonal DyFe₃(BO₃)₄ antiferromagnetic crystal have been theoretically studied. On this basis, recent experimental data [1] on the field and temperature dependences of magnetization and the temperature dependence of the initial magnetic susceptibility for three crystallographic directions in this antiferromagnet have been interpreted. The characteristics of the trigonal crystal field for the rare earth ion and the parameters of the Fe-Fe and Fe-Dy exchange interactions are determined. Limitations imposed by features of the magnetic characteristics (anisotropic magnetization in the three crystallographic directions, Schottky-type anomalies in the magnetic susceptibility, etc.) on the possible splitting of the ground-state multiplet in the crystal field and the splitting of the lowest doublet due to the f-d interaction for Dy³⁺ ions are established.     

The effect of Zr content on electrical properties of Ba(Ti<Subscript>1-x</Subscript>Zr<Subscript>x</Subscript>)O<Subscript>3</Subscript> ceramics

The effect of Zr content on the crystal structure and electrical properties of barium zirconate titanate (Ba(Zr,Ti)O₃) was studied by X-ray diffraction and dielectric, ferroelectric and impedance spectroscopy. An increase of Zr content into BaTiO₃ leads to a reduction in its c-parameter and an increase in its a-parameter, resulting in a change from tetragonal to cubic symmetry of the BaTiO₃ unit cell. The Curie temperatures are lowered and the relative permittivity values are decreased with increasing Zr content. The presence of BaZrO₃ secondary phases has the affect of decreasing tanδ. A higher applied electric field is required during the polarization process because of the effect of domain-wall pinning caused by oxygen vacancies. Impedance spectroscopy studies of Ba(Ti_0.95Zr_0.05)O₃ ceramics show a decrease in the bulk resistance with increasing temperature, indicating a typical negative temperature coefficient of resistance. PACS 74.62.Bf; 74.62.Yb; 77.22.Ch; 77.80.Bh; 77.84.Dy     

The structural,electronic and optical properties of CuGa (Se<Subscript>x</Subscript>S<Subscript>1-x</Subscript>)<Subscript>2</Subscript> compounds from first-principle calculations

The structural, electronic and optical properties of theCuGa (Se _x S_1-x )₂alloy system have been performed systematic within generalized gradient approximation(GGA) of Perdew-Burke-Ernzerhof (PBE) implemented in the Cambridge serial total energypackage (CASTEP) code. We calculate the lattice parameters and axial ratio, which agreewith the experimental values quite well. The anion position parameters uare also predicted using the model of Abrahams and Bernstein and the results seem to betrustworthy as compared to the experimental and theoretical values. The total and partdensity of states are discussed which follow the common rule of the conventionalsemiconductors. The static dielectric tenser and refractive index are summarized comparedwith available experimental and theoretical values. Also the spectra of the dielectricfunctions, refractive index, reflectance, absorption coefficient and real parts ofphotoconductivity are discussed in details.     

Raman scattering and electrical properties of Tl<Subscript>x</Subscript>Cu<Subscript>1−x</Subscript>GaSe<Subscript>2</Subscript> solid solutions

The results of the study of Raman scattering and photo-emf in Tl _x Cu_1−x GaSe₂ single crystals are presented. The objective of this work was to reveal some features of optical and phonon spectra, to study regularities of their variation with composition and, on this basis, to create prerequisites to extend the possibilities of their practical applications.     

Influence of different precursor surface layers on Cu(In<Subscript>1-x</Subscript>Ga<Subscript>x</Subscript>)Se<Subscript>2</Subscript> thin film solar cells

The properties of Cu(In_1-xGa_x)Se₂ (CIGS) thin films obtained by selenization of the precursors with different surface layers have been studied, and photovoltaic devices based on the absorbers were measured and analyzed. The devices constructed by the absorbers obtained by selenization of the precursors with CuGa-rich surface layers are improved, compared with those with In-rich surface layers. Through XRD, SEM, SIMS, illuminated J–V, QE and Raman spectra measurements, it was found that the increased Ga contents within the surface region of films and the graded Ga distribution can be realized in the selenized thin films fabricated by the precursors with the CuGa-rich surface layer. Consequently, the performances of the photovoltaic devices based on these thin films are further improved. PACS 61.72.Ss; 87.64.Jt; 68.60.Bs; 81.15.Cd; 84.60.Jt     

Magnetic and electrical investigations of Fe<Subscript>85-x</Subscript>Co<Subscript>x</Subscript>B<Subscript>15</Subscript> metallic glasses

The magnetic and electrical properties of metallic glasses with the general formula Fe_85-xCo_xB₁₅ were investigated over a large temperature range to study their concentration-dependent physical parameters. All of the samples investigated (x=17,21,30, and 40) were soft ferromagnets with coercive fields H_c1 Oe and high Curie temperatures slightly above 1200 K. The temperature-dependent magnetization behaved irregularly, and exhibited hysteresis during heating and subsequent cooling through the Curie temperature. The variation of the magnetization with temperature demonstrates that one or more phase transformations (crystallization) occurred in the course of the heating. The electrical resistivities exhibited positive temperature coefficients and minima at temperatures below 50 K. We did not observe a nonmonotonic variation of the magnetic and electrical properties with a monotonic change of the Fe_85-xCo_xB₁₅ composition that would correlate with the earlier proposed formation of strong nanoclusters in the vicinity of particular stoichiometrically close Fe:Co ratios. The good soft magnetic characteristics make the Fe_85-xCo_xB₁₅ metal glasses promising candidates for engineering materials in inductive applications. PACS 71.23.Cq; 75.75.+a     

Evidence of an intermediate phase in ternary Ge<Subscript>7</Subscript>Se<Subscript>93-x</Subscript>Sb<Subscript>x</Subscript> glasses

The compositional dependence of thermal properties, such as glass transition temperature (T_g), non-reversing enthalpy change (ΔH_NR) and the specific heat capacity change (ΔC_p) of melt quenched Ge₇Se_93-xSb_x (21 ≤ x ≤ 31) glasses, has been studied using alternating differential scanning calorimetry (ADSC) which is analogous to modulated differential scanning calorimetry (MDSC). The glass transition temperature, T_g, which is a measure of global connectivity of the glass, has been found to increase with the addition of Sb. In addition, a change in slope has been observed in the composition dependence of T_g at an average coordination 〈r〉 = 2.40. The experimentally observed compositional variation of glass transition temperature, has been compared with the theoretical predictions from the stochastic agglomeration theory (SAT) and has been found to be consistent. Further, a narrow thermally reversing window is seen in the compositional variation of the relaxation enthalpy (ΔH_NR), which is centered around 〈r〉 = 2.40. The change in specific heat capacity (ΔC_p) at T_g is also found to exhibit a distinct minima at 〈r〉 = 2.40, suggesting that the structural rearrangements for the liquid in the glass transition region are minimized around 〈r〉 = 2.4.     

Effect of sintering conditions on the properties of sol-gel-derived Li<Subscript>1.3</Subscript>Al<Subscript>0.3</Subscript>Ti<Subscript>1.7</Subscript>(PO<Subscript>4</Subscript>)<Subscript>3</Subscript>

Solid electrolyte Li_1.3Al_0.3Ti_1.7(PO₄)₃ was prepared by sol-gel method under different sintering conditions. The structural identification, surface morphology, electrochemical window, ionic conductivity, and activation energy of the Li_1.3Al_0.3Ti_1.7(PO₄)₃ sintered pellets were investigated by X-ray diffraction, scanning electron microscopy, cyclic voltammetry, and electrochemical impedance spectroscopy. It is found that the sintering temperature and time have considerable effect on the properties of the Li_1.3Al_0.3Ti_1.7(PO₄)₃ sintered pellets. The Li_1.3Al_0.3Ti_1.7(PO₄)₃ pellet sintered at 900 °C for 2 h is denser than the pellets sintered at other conditions. Different sintering conditions result in the sintered pellet with different porosity. However, the sintering conditions have little effect on the electrochemical window of Li_1.3Al_0.3Ti_1.7(PO₄)₃. Among the Li_1.3Al_0.3Ti_1.7(PO₄)₃ pellets sintered at various conditions, the pellet sintered at 900 °C for 2 h shows the highest ionic conductivity of 3.46 × 10⁻⁴ S cm⁻¹ and the lowest activation energy of 0.2821 eV.     

Thermal sensors based on Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> and (Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>70</Subscript>(Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript>)<Subscript>30</Subscript> thin films

Thin films of Sb₂Te₃ and (Sb₂Te₃)₇₀(Bi₂Te₃)₃₀ alloy and have been deposited on precleaned glass substrate by thermal evaporation technique in a vacuum of 2?×?10^?6 Torr. The structural study was carried out by X-ray diffractometer, which shows that the films are polycrystalline in nature. The grain size, microstrain and dislocation density were determined. The Seebeck coefficient was determined as the ratio of the potential difference across the films to the temperature difference. The power factor for the (Sb₂Te₃)₇₀ (Bi₂Te₃)₃₀ and (Sb₂Te₃) is found to be 19.602 and 1.066 of the film of thickness 1,500 Å, respectively. The Van der-Pauw technique was used to measure the Hall coefficient at room temperature. The carrier concentration was calculated and the results were discussed.     

An investigation into ultra-thin pseudobinary oxide (TiO<Subscript>2</Subscript>)<Subscript>x</Subscript>(Al<Subscript>2</Subscript>O<Subscript>3</Subscript>)<Subscript>1-x</Subscript> films as high-<Emphasis Type="Italic">k</Emphasis> gate dielectrics

As potential gate dielectric materials, pseudobinary oxide (TiO₂)_x(Al₂O₃)_1-x (0.1≤x≤0.6) films (TAO) were deposited on Si (100) substrates by pulsed-laser deposition method and studied systematically via various measurements. By a special deposition process, including two separate steps, the TAO films were deposited in the form of two layers. The first layer was deposited at room temperature and the second layer was completed at the substrate temperature of 400 °C. Detailed data show that the properties of the TAO films are closely related to the ratio between TiO₂ and Al₂O₃. The existence of the first layer deposited at room temperature can effectively restrain the formation of the interfacial layer. And according to the results of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy performed on the films, no other information belonging to the silicon oxide could be observed. For the (TiO₂)_0.4(Al₂O₃)_0.6 film, the best result has been achieved among all samples and its dielectric constant is evaluated to be about 38. It is valuable for the amorphous TAO film as one of the promising dielectric materials for high-k gate dielectric applications. PACS 77.55.+f; 73.40.Qv; 81.15.Fg     

Magnetic and thermal properties of single-crystal NdFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript>

The neodymium ferroborate NdFe₃(BO₃)₄ undergoes an antiferromagnetic transition at T _N = 30 K, which manifests itself as a λ-type anomaly in the temperature dependence of the specific heat C and as inflection points in the temperature dependences of the magnetic susceptibility χ measured at various directions of an applied magnetic field with respect to the crystallographic axes of the sample. Magnetic ordering occurs only in the subsystem of Fe³⁺ ions, whereas the subsystem of Nd³⁺ ions remains polarized by the magnetic field of the iron subsystem. A change in the population of the levels of the ground Kramers doublet of neodymium ions manifests itself as Schottky-type anomalies in the C(T) and χ(T) dependences at low temperatures. At low temperatures, the magnetic properties of single-crystal NdFe₃(BO₃)₄ are substantially anisotropic, which is determined by the anisotropic contribution of the rare-earth subsystem to the magnetization. The experimental data obtained are used to propose a model for the magnetic structure of NdFe₃(BO₃)₄.     

Spectral properties of a Nd<Superscript>3+</Superscript>-doped Li<Subscript>3</Subscript>Ba<Subscript>2</Subscript>Gd<Subscript>3</Subscript>(MoO<Subscript>4</Subscript>)<Subscript>8</Subscript> crystal

The spectral properties of a promising laser material, ternary molybdate Li₃Ba₂Gd₃(MoO₄)₈:Nd³⁺, are studied (i.e., its optical absorption spectra, luminescence spectra, kinetic of luminescence decay, and temperature dependence of luminescence). Luminescence of the crystalline matrix is detected, and the temperature dependence of its intensity and reabsorption by neodymium are investigated.     

Relations between physical properties of the biferroic Pb(Fe<Subscript>1-x</Subscript>Nb<Subscript>x</Subscript>)O<Subscript>3</Subscript>ceramics and their composition change

The work shows basic features of ferromagnetic ceramics Pb(Fe_{1 - x}Nb_x)O₃ with various contents of Fe/Nb (x=1/3, 1/2, 2/3). The synthesis were carried out by powders sintering and calcination whereas densification by hot uniaxial pressing and conventional sintering methods. Optimum conditions of PFN obtention with various contents were based on X-ray, microstructural, dielectrical and conductivity tests together with increase of iron contents in Pb(Fe_{1 - x}Nb_x)O₃ usage parameters of those ceramics worsen. Optimum parameters are shown by the ceramics with contents Pb(Fe_{1 / 2}Nb_{1 / 2})O₃ synthetized using calcination method and densified by hot uniaxial pressing method.     

Phase transition and electrical properties of (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)(Nb<Subscript>1-x</Subscript>Ta<Subscript>x</Subscript>)O<Subscript>3</Subscript> lead-free piezoelectric ceramics

(K_0.5Na_0.5)(Nb_1-xTa_x)O₃ lead-free piezoelectric ceramics have been prepared by an ordinary sintering technique. The results of X-ray diffraction reveal that Ta⁵⁺ diffuses into the K_0.5Na_0.5NbO₃ lattices to form a solid solution with an orthorhombic perovskite structure. Because of the high melting temperature of KTaO₃, the (K_0.5Na_0.5)(Nb_1-xTa_x)O₃ ceramics can be sintered at higher temperatures. The partial substitution of Ta⁵⁺ for the B-site ion Nb⁵⁺ decreases both paraelectric/cubic–ferroelectric/tetragonal and ferroelectric/tetragonal–ferroelectric/orthorhombic phase transition temperatures, T_C and T_O-T. It also induces a relaxor phase transition and weakens the ferroelectricity of the ceramics. The ceramics become ‘softened’, leading to improvements in d₃₃, k_p, k_t and ε_r and a decease in E_c, Q_m and N_p. The ceramics with x=0.075–0.15 become optimum, having d₃₃=127–151 pC/N, k_p=0.43–0.44, k_t=0.43–0.44, ε_r=541–712, tanδ=1.75–2.48% and T_C=378–329 °C. PACS 77.65.-j; 77.84.Dy; 77.84.-s     

Magnetic properties of an easy-plane trigonal NdFe<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> antiferromagnet

The field and temperature dependences of magnetization and the temperature dependences of the initial magnetic susceptibility have been theoretically studied for three crystallographic directions in a trigonal NdFe₃(BO₃)₄ antiferromagnetic crystal. The calculations were performed using a molecular field approximation and a crystal field model for the rare-earth subsystem. The obtained theoretical expressions are applied to the interpretation of recent experimental data [1–4] on the magnetic properties of NdFe₃(BO₃)₄. The results of calculations show a good agreement with experiment. The proposed theory adequately describes (i) anomalies of the Schottky type in the temperature dependence of the magnetic susceptibility, (ii) nonlinear curves of magnetization in the basal plane in a magnetic field up to 1 T (showing evidence of the first-order phase transitions) and their evolution with the temperature, and (iii) the field and temperature dependences of magnetization in a magnetic field up to 9 T.