弥散边缘型分形金薄膜的临界特性

研究了沉积在分形基底上的弥散边缘型分形金薄膜的边缘对三次谐波系数以及临界电流的影响。结果表明，该薄膜系统的三次谐波系数、电阻率以及临界电流之间仍存在指数式临界关系。但由于边缘的影响，其临界指数与其它薄膜系统的相应值之间在着较大差别。还对这些临界进修生普适问题进行了讨论。．     

高温超导薄膜临界电流密度的无损测量研究

临界电流密度Jc是超导薄膜的一个重要参量,它可以衡量超导薄膜的功率承载能力。大面积高温超导薄膜制成后,其Jc需要被无损精确测量。文中提出了一种新的交流磁场下的高温超导薄膜临界态模型:(1)基于此模型对薄膜的临界电流密度进行了精确无损测量;(2)并将实验测量的三次谐波电压曲线进行拟合研究。首先,根据麦克斯韦方程和伦敦方程,计算外加直流磁场超导薄膜Meissner态下电流和磁场在薄膜内的分布;然后分析薄膜进入临界态后内部电流的变化,在考虑顶扎力作用的情况下,提出了临界态电流和磁场非均匀分布模型;最后根据其模型,推导出三次谐波电压的表达式。为了验证该理论,分别对四片超导薄膜在不同频率下进行了三次谐波和临界电流密度测量。实验结果表明:三次谐波电压的理论与实验曲线一致;与四点传输法的测量结果相比较,该方法测量超导薄膜临界电流密度的误差在5%左右,具有高精度、无损伤、方便快捷等优点。     

轴向加速管的数值模拟

 用二维全电磁数值模拟方法研究了轴向加速管，虽然没有实现理想群聚，但通过加一个中间腔, 大大提高了前两阶谐波电流分量，其中一阶谐波电流调制系数达到了140%，二阶谐波电流调制系数达到了68%。通过对提取腔的设计，可以选择地输出不同的频率，其中一次谐波频率为2.2GHz,输出功率1.25GW，效率9.33%；二次谐波频率为4.4GHz，输出功率0.48GW,效率3.6%。     

一种高温超导薄膜临界电流密度感应法无损测量装置

临界电流密度(Jc)是超导薄膜、块材、带材等材料的基本性能参数,决定了超导器件及设备的性能和稳定性,简易、准确的无损Jc测量方法对超导材料特性研究及超导器件的性能保障具有重要意义。本文介绍一种基于三次谐波测量的高温超导薄膜局部临界电流密度测量方法和测量装置。研究显示,在一定幅值的初级线圈交流磁场激励下,Ⅱ型超导体会产生非线性响应,通过分析次级线圈中三次谐波分量的幅值变化,可以推算超导体的局部临界电流密度。我们搭建了一套基于此原理、适用于液氮条件的测量装置。通过对比实验,对测量的准确性进行了验证,尤其针对微弱的微纳伏量级被测信号,采取了必要的噪声抑制措施,并通过对测量数据的校正,提高了测量的准确度。实验研究显示,基于三次谐波测量的方法对于超导薄膜的临界电流密度的测量准确度较高,进行误差修正后,测量装置的误差小于10%。超导薄膜感应法测量装置的搭建十分方便,而且应用灵活,对于大面积超导薄膜的临界电流密度分布测量具有十分显著的优势。     

量子点量子阱中的三阶非线性光学特性的研究

利用紧致密度矩阵近似方法，研究了一个特殊量子点量子阱中的三阶非线性光学特性(三次谐波产生)，得到了量子点量子阱系统的三次谐波产生系数的解析表达式，而且考虑了量子点量子阱系统中的两种电子束缚态-壳层阱内与阱外两种束缚态。对CdS/HgS构成的典型的量子点量子阱进行了数值计算，得到了10^-15(m／v)^2量级的三次谐波产生系数，并且绘出了三次谐波产生系数作为量子点量子阱的尺寸和泵浦光子能量的函数曲线，最后对曲线的特征及其形成的原因进行了解析。     

掺半花菁二氧化硅薄膜二阶光学非线性与薄膜结构的动态变化关系

用溶胶－凝胶技术制备的掺入半花菁染料的二氧化硅薄膜在不加电场极化条件下，由半花菁分子的自取向导致光学二次谐波产生，定量测得厚度为５０ｎｍ薄膜的二阶非线性系数ｘ（２）为６．６ｐｍ／Ｖ，着重研究了薄膜稳定前的溶剂挥发过程中，膜结构的变化以及相应二阶光学非线性的变化，在成膜后的四个小时中，质子化半花菁逐步转化为单体和聚集体态，同时，光学二次谐波信号也不断增大，还观察到在这一过程中出现了单体和聚集态半花菁     

锗薄膜透射光学二次谐波研究

本文采用固定入射角，改变入射光偏振方位角的方法从实验上了研究了锗薄膜的透射光学二次谐波产生及其变化规律，并从理论上推导了产生透射二次谐波的表达式，最后拟合求得描述面谐波电流的唯象参数ａ。     

低温制备微晶硅薄膜生长机制的研究

采用热丝化学气相沉积技术制备了一系列处于不同生长阶段的薄膜样品，用原子力显微镜系 统地研究生长在单晶硅衬底和玻璃衬底上薄膜表面形貌的演化.按照分形理论分析得到：在 玻璃衬底上的硅薄膜以零扩散随机生长模式生长；而在单晶硅衬底上，薄膜早期以有限扩散 生长模式生长，当膜厚超过某一临界厚度时转变为零扩散随机生长模式.岛面密度与膜厚的 依赖关系表明，在临界厚度时硅衬底和玻璃衬底上的岛面密度均出现了极大值.Raman谱的测 量证实，玻璃衬底上薄膜临界厚度与非晶/微晶相变之间存在密切的关系.不同的衬底材料直 接影响反应 关键词： 生长机制 微晶硅薄膜 表面形貌 热丝化学气相沉积     

多层纳米薄膜结构热物性重构

基于谐波探测技术测量材料导热系数和热扩散系数的基本原理,给出3ω法用于多层纳米薄膜结构热物性实验表征的方法.考虑了层间接触热阻的作用,在频域内定义了热阻抗的概念.理论分析了各层纳米薄膜的导热系数、热扩散系数等热参数对加热膜温度波动影响的敏感性.将敏感系数与实验数据处理相结合,利用三次谐波的实部和虚部分量测量了ZrO2/SiO2增透膜多层膜结构中各层的导热系数和热扩散系数.该方法可用来有效表征其他微纳米结构的热性能.     

SiO2-GeO2薄膜二次谐波产生的稳定性研究

利用溶胶－凝胶（ｓｏｌ－ｇｅｌ）方法制备了ＳｉＯ２－ＧｅＯ２薄膜,并测量了薄样品电场极化后光学二次谐波信号的相对大小和时间弛以豫特性,通过对汪同衬底材料及不同温度下电场极化薄膜样品二次谐波信号的时间弛豫特性比较,表明薄膜与衬底之间界面电荷的稳定性受衬底材料体电导率的影响,从而影响了薄薄膜样品二次谐波信号的稳定性。     

THIRD-HARMONIC COEFFICIENT IN A BILATERAL ROUGH GOLD FILM PERCOLATION SYSTEM

In this paper, the third-harmonic coefficient in a bilateral rough Au-film percolation system deposited on the self-affine substrates is studied. It is proved experimentally that both the critical current and the film resistivity an functions of the third-harmonic coefficient yield power law critical behaviors. However, compared with flat systems, the critical exponents are significantly changed. The discussion for the universality behavior in this special system is also presented.     

FRINGE EFFECT ON CRITICAL CURRENT OF A GOLD FILM PERCOLATION SYSTEM

In this paper, the fringe effect on critical current has been studied systematically by measuring the electric transport characteristics of a Au-film system with diffuse fringe structure. It is found experimentally that, when the fringe effect becomes obvious, the film will exhibit strange I-R charac-teristics, in which exist a balance current and a critical current. We find that the critical exponents are related lo the diffuse fringe structure of the Films. The detailed analysis shows that the character- biles result from the thermionic-activating conductive effect in the diffuse fringe film sytem.     

A new model analysis of the third harmonic voltage in inductive measurement for critical current density of superconducting films

The critical current density J c is one of the most important parameters of high temperature superconducting films in superconducting applications,such as superconducting filter and superconducting Josephson devices.This paper presents a new model to describe inhomogeneous current distribution throughout the thickness of superconducting films applying magnetic field by solving the differential equation derived from Maxwell equation and the second London equation.Using this model,it accurately calculates the inductive third-harmonic voltage when the film applying magnetic field with the inductive measurement for J c.The theoretic curve is consistent with the experimental results about measuring superconducting film,especially when the third-harmonic voltage just exceeds zero.The J c value of superconducting films determined by the inductive method is also compared with results measured by four-probe transport method.The agreements between inductive method and transport method are very good.     

Specifics of third-harmonic generation in Bi–Sr–Ca–Cu–O superconductors in the region of superconducting transition temperatures

The specifics of third-harmonic generation in Bi–Sr–Ca–Cu–O two-phase superconductors are studied. It is shown that the emergence of a maximum in the temperature dependence of the third-harmonic voltage in the region of superconducting transition temperatures is associated with the redistribution of the eddy current in the bulk of the semiconductor between its regions with different superconducting parameters (critical current and critical temperature).     

Resonant frequency-domain interferometry via third-harmonic generation

A method for measuring resonances using a combination of third-harmonic generation and frequency-domain interferometry is described and demonstrated in an index-matched dielectric material. The phase of the third-harmonic spectrum of a pulse generated from a resonant NdAlO(3) thin film and a temporally displaced sapphire substrate pulse was measured by analyzing the spectral interference pattern. The appropriate combination of substrate and film signals was obtained by translating the sample through the laser focus while observing the third-harmonic intensity.     

Two-photon interaction of coherent radiation with a thin film of resonant atoms

The problem of the interaction of an ultrashort optical pulse and a thin film of resonant atoms under the conditions of two-photon absorption, third-harmonic generation, and the inverse effect of the latter on the pump pulse via Raman scattering is studied. The fact that the field acting on an atom differs from the macroscopic field in the film is also taken into consideration. It is shown that the polarization of the film undergoes dynamic relaxation even in the absence of irreversible relaxation, suppressing Rabi oscillations and establishing stationary values of the populations of the resonant energy levels and of the polarization of the film at the pump and the third-harmonic frequencies. Zh. éksp. Teor. Fiz. 115, 30–42 (January 1999)     

Quantum dynamics of formation of an unstable field state in the process of intracavity third-harmonic generation

The dynamics of the Wigner functions and quantum entropy of the fundamental and third-harmonic modes is studied for the process of intracavity third-harmonic generation. It is shown that quantum dynamics of the system strongly depends on the coupling coefficient of the interacting modes. The dynamics of the transition of the system from a stable to an unstable state is investigated.     

Enhanced performance of graphene by using gold film for transfer and masking process

In this study, we tried to reduce the organic contamination of graphene. This organic contamination most likely occurs during the graphene transfer and lithography steps, which in turn degrades the quality of the graphene. Inorganic Au film was applied for Au-assisted transfer instead of the conventional thin poly(methyl methacrylate), and a new fabrication process using the Au-film for the transfer and masking layer was designed in order to minimize the contamination of graphene from organic residues. As a result, we demonstrated that the overall qualities of the transferred graphene film and graphene transistors have been highly improved. These improvements include an enhancement of mobility, and a decrease of defects, unintentional doping, contact resistance, and sheet resistance.     

Resistive state of superconducting structures with fractal clusters of a normal phase

The effect of morphologic factors on magnetic flux trapping and critical currents in a superconducting structure, which presents a type II percolation superconductor with pinning centers, is considered. The role of pinning centers is played by fractal clusters of the normal phase. The properties of these clusters are analyzed in detail: their statistics is studied, the distribution of critical currents of depinning is found, and the depen-dences of the main statistical parameters on the fractal dimension are obtained. The effect of fractal clusters of the normal phase on the electric field caused by the motion of the magnetic flux after the vortices have been broken away from pinning centers is considered. The current-voltage characteristics of superconducting structures in a resistive state are obtained for an arbitrary fractal dimension. It is found that the fractality of the boundaries of normal-phase clusters forces magnetic flux trapping, thereby increasing the critical current.