Characterisation of atomic-scale defects in ODS ferritic alloys by positron annihilation

The vacancy-type defects and their local chemical environment in different ODS alloys produced in the USA (14YWT), China (K5) and Russia (ODS EP-450) are studied. The Angular Correlation of Annihilation Radiation (ACAR), which is one of the positron annihilation spectroscopy method, was used. It was shown that in all alloys, except 14YWT, the dominant type of positron traps are vacancy-like defects, localised in matrix or associated with dislocations and/or interfaces of the incoherent particles. In the case of 14YWT alloy, which contains Y–Ti–O nanoclusters of a high density, the positrons confine and annihilate at O-vacancy pairs or complexes within nanoclusters. It is testified by enhanced electron density in annihilation sites and neighbourhood of Ti and Y atoms. These results, obtained by the ACAR method, indicate that the vacancies play an essential role in the formation of nanoclusters in ODS 14YWT alloy as it was theoretical predicted by first-principle calculations.     

Effect of vacancies on incipient plasticity during contact loading

Atomistic simulations and experimental nanoindentation tests were used to examine the effect of vacancies on the inception of plastic deformation in Ni. Molecular dynamics have shown the effect of vacancy position on the yield load and demonstrate a variety of mechanisms which are responsible for the inception of plastic deformation during indentation. In cases where the vacancy position is close to regions of high shear stresses the nucleation of dislocations is related to the location of a vacancy; however, homogeneous nucleation of dislocations is also observed for vacancy-containing crystals. Complementary experiments have been used to demonstrate the effect of indenter size on the onset of yielding in the presence of vacancies. Both the simulations and experiments show that larger indenter tips increase the chance of weakening the material in the presence of vacancies.     

Ordering of defects in metal systems exposed to high-energy particles

A diffusion model for pore nucleation and growth in metal systems exposed to high-energy particles is proposed. The pore nucleation is seen as coagulation of excess vacancies. Our rough estimates correlate with experiment. A mechanism of radiation-induced pore formation and spatial ordering in metal systems is suggested. Altai State Technical University. Translated from Izvestiya Vysshikh Uchebnykh, Zevedenii, Fizika, No. 4, pp. 82–86, May, 2000.     

Contribution of Surface Defects to the Interface Conductivity of SrTiO_3/LaAlO_3

Based on the first-principles method,the structural stability and the contribution of point defects such as O,Sr or Ti vacancies on two-dimensional electron gas of n-and p-type LaAlO_3/SrTiO_3 interfaces are investigated.The results show that O vacancies at p-type interfaces have much lower formation energies,and Sr or Ti vacancies at n-type interfaces are more stable than the ones at p-type interfaces under O-rich conditions.The calculated densities of states indicate that O vacancies act as donors and give a significant compensation to hole carriers,resulting in insulating behavior at p-type interfaces.In contrast,Sr or Ti vacancies tend to trap electrons and behave as acceptors.Sr vacancies are the most stable defects at high oxygen partial pressures,and the Sr vacancies rather than Ti vacancies are responsible for the insulator-metal transition of n-type interface.The calculated results can be helpful to understand the tuned electronic properties of LaAlO_2/SrTiO_3 heterointerfaces.     

Ti/HfO2/Pt阻变存储单元中的氧空位聚簇分布

为了研究阻变存储器导电细丝的形成位置和分布规律, 使用X射线光电子能谱研究了Ti/HfO₂/Pt阻变存储器件单元中Hf 4f的空间分布, 得到了阻变层的微结构信息. 通过I-V测试, 得到该器件单元具有典型的阻变特性; 通过针对Hf 4f的不同深度测试, 发现处于低阻态时, 随着深度的增加, Hf⁴⁺化学组分单调地减小; 而处于高阻态和未施加电压前, 该组分呈现波动分布; 通过Hf⁴⁺在高阻态和低阻态下组分含量以及电子能损失谱分析, 得到高阻态下Hf⁴⁺组分的平均含量要高于低阻态; 另外, 高阻态和低阻态下的O 1s谱随深度的演变也验证了Hf⁴⁺的变化规律. 根据实验结果, 提出了局域分布的氧空位聚簇可能是造成这一现象的原因. 空位簇间的链接和断裂决定了导电细丝的形成和消失. 由于导电细丝容易在氧空位缺陷聚簇的地方首先形成, 这一研究为导电细丝的发生位置提供了参考.     

Growth temperature dependent evolutions of microstructural, optical and magnetic properties of Zn0.75Co0.25O films

Zn0.75Co0.25O films are fabricated via reactive electron beam evaporation. The influence of growth temperature on the microstructural, optical and magnetic properties of Zn0.75Co0.25O films is investigated by using x-ray diffraction, selected area electron diffraction, field emission scanning electron microscope, high resolution transmitting electron microscope, photoluminescence （PL）, field dependent and temperature dependent DC magnetization, and x-ray photoelectron spectroscopy （XPS）. It is shown that Zn0.75Co0.25O films grown at low temperatures （250-350℃） are of single-phase wurtzite structure. Films synthesized at 300 or 350℃ reveal room temperature （RT） ferromagnetism （FM）, while su for 250℃ fabricated films is found above 56 K. PL and XPS investigations show favour towards the perspective that the O-vacancy induced spin-split impurity band mechanism is responsible for the formation of RT FM of Zn0.75Co0.25O film, while the superparamagnetism of 250℃ fabricated film is attributed to the small size effect of nanoparticles in Zn0.75Co0.25O film.     

Atomistic sliding mechanisms of the Σ=5 symmetric tilt grain boundary in bcc iron

Atomistic computer simulations were performed to investigate the mechanisms of grain-boundary sliding in bcc Fe using molecular statics and molecular dynamics with embedded-atom method interatomic potentials. For this study we have chosen the Σ?=?5, (310)[001] symmetrical tilt boundary with tilt angle θ?=?36.9°. Sliding was determined to be governed by grain-boundary dislocation activity with Burgers vectors belonging to the displacement shift complete lattice. The sliding process was found to occur through the nucleation and glide of partial grain-boundary dislocations, with a secondary grain-boundary structure playing an important role in the sliding process. Interstitial impurities and vacancies were introduced into the grain boundary to study their role as nucleation sites for the grain-boundary dislocations. While vacancies and H interstitials act as preferred nucleation sites, C interstitials to not.     

Evidence of cobalt-vacancy complexes in Zn(1-x)Co(x)O dilute magnetic semiconductors

We investigate the local structure of ferromagnetic Zn(1-x)Co(x)O epilayers by coupling polarization-dependent x-ray absorption spectroscopy and ab initio calculations of selected defect structures. We give clear evidence of the presence of oxygen vacancies, located close to the Co atoms in a specific complex configuration. We also establish the upper concentration limit of metallic parasitic nanophases and their contribution to magnetism. Our results lead to the conclusion that oxygen vacancies play an important role in originating the high temperature ferromagnetism of Zn(1-x)Co(x)O.     

Solid-state NMR studies of 17O-enriched pyrophosphates

For the first time, 17O NMR studies were performed on 17O-enriched crystalline pyrophosphates (magnesium-, sodium- and barium-pyrophosphate) by means of triple-quantum magic-angle spinning (3QMAS) and double-rotation (DOR) in the high external field of 17.6 T. Oxygen atoms in bridging positions (P-OB-P) exhibit a significant higher quadrupole coupling constant compared to oxygen atoms in terminal positions (P-OT). With increasing cationic radius a higher value of the chemical shift of the terminal oxygen atoms is observed.     

Inverse growth kinetics on InSb(110)

Using He atom scattering, layer-by-layer erosion of InSb(110) by low energy ion bombardment has been observed to proceed via nucleation of vacancy islands, island growth and coalescence. The mechanism is in full agreement with theoretical models developed for crystal growth, with diffusing adatoms substituted by diffusing vacancies. In particular it has been observed that coalescence of the vacancy islands sets in after the removal of small fractions of a monolayer and that the average terrace width increases with increasing number of sputtered monolayers.     

Effects of oxygen concentration and irradiation defects on the oxidation corrosion of body-centered-cubic iron surfaces: A first-principles study

Oxidation corrosion of steels usually occurs in contact with the oxygen-contained environment, which is accelerated by high oxygen concentration and irradiation. The oxidation mechanism of steels is investigated by the adsorption/solution of oxygen atoms on/under body-centered-cubic (bcc) iron surfaces, and diffusion of oxygen atoms on the surface and in the near-surface region. Energetic results indicate that oxygen atoms prefer to adsorb at hollow and long-bridge positions on the Fe(100) and (110) surfaces, respectively. As the coverage of oxygen atoms increases, oxygen atoms would repel each other and gradually dissolve in the near-surface and bulk region. As vacancies exist, oxygen atoms are attracted by vacancies, especially in the near-surface and bulk region. Dynamic results indicate that the diffusion of O atoms on surfaces is easier than that into near-surface, which is affected by oxygen coverage and vacancies. Moreover, the effects of oxygen concentration and irradiation on oxygen density in the near-surface and bulk region are estimated by the McLean's model with a simple hypothesis.     

A first-principle prediction on the magnetism and electronic structure of Ti-doped CoO with two O vacancies

The electronic structure and magnetism in Co₁₄Ti₂O₁₄ systems are investigated by using the first-principles calculations. The system of 2 × 2 × 2 Co₁₄Ti₂O₁₆ supercell doped with Ti at 9 and 11 position shows a half-metallic character with a high spin polarization. Based on the above system, we remove two O atoms to form two O vacancies. The two O vacancies near Ti have a huge effect on the electronic structure and magnetic properties of Co₁₄Ti₂O₁₄ system. When O vacancies locate at 1 and 3 positions, the system shows a half-metallic character. For the O vacancies at 6 and 8 positions, the system shows a semiconducting character. The system with O vacancies at 9 and 11 positions is a typical spin gapless semiconductor.     

Vacancy trapping mechanism for multiple hydrogen and helium in beryllium: a first-principles study

The microscopic mechanism for H and He trapping by vacancy defects and bubble formation in a Be host lattice is investigated using first-principles calculations. A single He atom prefers to occupy a vacancy centre while H does not. He can segregate towards the vacancy from the interstitial site much more easily than H. Both H and He exhibit lower diffusion barriers from a remote interstitial to a vacancy with regard to their diffusion barriers inside a perfect Be solid. Up to five H or 12 He atoms can be accommodated into the monovacancy space, and the Be-He interaction is much weaker than Be-H. The physical origin for aggregation of multiple H or He atoms in a vacancy is further discussed. The strong tendency of H and He trapping at vacancies provides an explanation for why H and He bubbles were experimentally observed at vacancy defects in materials. We therefore argue that vacancies provide a primary nucleation site for bubbles of H and He gases inside Be materials.     

Effect of vacancies on nucleation of a new phase in copper-base alloys

The effect of hardening conditions on the decomposition of alloys Cu-Al-Co was investigated by studying the kinetics of the change of electrical resistance, measuring the paramagnetic susceptibility, and by transmission microscopy. The data obtained indicated a considerable effect of hardening vacancies on the process of nucleation of the stable phase (CoAl). It is shown that nucleation of phase CoAl occurs on vacancion clusters.     

Effects of hydrogen and impurities on void nucleation in copper: simulation point of view

The mechanisms of hydrogen influence on vacancy cluster formation in copper are studied using numerical simulations. Vacancy agglomeration in clusters larger than divacancies is found to be energetically favourable, but in pure copper the cluster creation is prevented by the lack of binding between single vacancies. Hydrogen dissolved in the lattice readily accumulates in vacancy-type defects, changing their properties. A single vacancy can accommodate up to six hydrogen atoms. Hydrogen stabilizes divacancies and promotes vacancy cluster nucleation. In larger vacancy clusters, accumulated hydrogen prevents cluster collapse into stacking fault tetrahedra. In small voids, hydrogen prefers to remain in atomic form at the void surface, but when voids become sufficiently large, hydrogen molecules in the void interior can also be formed. Some common impurities in copper (O, S, P and Ag) contribute to void formation by capturing vacancies in their vicinity. In contrast, substitutional Ni has little effect on vacancy clustering but tends to capture interstitial hydrogen.     

Fourier transform absorption spectra of H2O and H2O in the 3ν + δ and 4ν polyad region

Fourier transform absorption spectra of H₂¹⁸O-enriched and H₂¹⁷O-enriched water vapor in the 3ν + δ and 4ν polyad region have been analyzed. With the aid of theoretically calculated linelists, we have assigned 1014 lines attributed to H₂¹⁸O and 836 lines of 855 attributed to H₂¹⁷O. Seven new band origins are found for H₂¹⁷O and one for H₂¹⁸O.     

Fe-Cr合金辐照空洞微结构演化的相场法模拟

Fe-Cr合金作为包壳材料在高温高辐照强度等极端环境下服役,产生空位和间隙原子等辐照缺陷,辐照缺陷簇聚诱发空洞、位错环等缺陷团簇,引起辐照肿胀、晶格畸变,导致辐照硬化或软化致使材料失效.理解辐照缺陷簇聚和长大过程的组织演化,能更有效调控组织获得稳定服役性能.本文采用相场法研究Fe-Cr合金中空洞的演化,模型考虑了温度效应对点缺陷的影响以及空位和间隙的产生和复合.选择400—800 K温度区间、0—16 dpa辐照剂量范围的Fe-Cr体系为对象,研究在不同服役温度和辐照剂量下的空位扩散、复合和簇聚形成空洞的过程.在400—800 K温度区间,随着温度的升高,Fe-Cr合金空洞团簇形核率呈现出先升高后下降的趋势.考虑空位与间隙的重新组合受温度的影响可以很好地解释空洞率随温度变化时出现先升高后降低的现象.由于温度的变化将影响Fe-Cr合金中原子离位阀能,从而影响产生空位和间隙原子.同一温度下,空洞半径和空洞的体积分数随辐照剂量的增大而增大.辐照剂量的增大,级联碰撞反应加强,空位与间隙原子大量产生,高温下空位迅速的扩散聚集在Fe-Cr合金中将形成更多数量以及更大尺寸的空洞.     

Conditions for growth of columnar and filamentary crystals

The computer model of the initial stage of condensation processes is developed. The stochastic processes of adsorption, surface diffusion, and desorption occur on the 70×70 lattice of adsorption vacancies. The model was tested by an example close to water vapor sorption on a conventional crystal surface. Computed results demonstrate the processes of nucleation, growth of crystals, and developed condensation. Computations were carried out for various adsorption energies. Results showed that with decreasing energy of adsorption the character and rate of nucleation and subsequent condensation vary. With decreasing energy of adsorption the probability of nucleation of islets on substrate reduces, the filling of the next atomic layers on islets occurs earlier than the filling of the substrate, the growth rate of islets in height increases as compared to condensation of a continuous film, and the growth rate of area of islets decreases. There is a typical energy of adsorption at which the growth rate of islets in height reaches its maximum. At a further drop of adsorption energy, there is a growth of islets only in height, the growth rate, however, reduces. The phenomena revealed in computations illustrate the mechanism of origin of columnar and filamentary crystals.     

具有氧空位Bi_xWO_6(1.81≤x≤2.01)的第一性原理计算和光催化性能研究

为了探索影响Bi_2WO_6光催化性能的内在机制,采用密度泛函理论(DFT)计算和实验研究了非化学计量和氧空位对Bi_2WO_6晶体结构、电子结构和显微结构的影响.采用溶剂热法合成了具有氧空位的非化学计量Bi_xWO_6(x=1.81,1.87,1.89,1.92,2.01)光催化剂.DFT计算结果表明,氧空位的存在可显著减小Bi_2WO_6的带隙,有利于光生电子的生成.实验结果表明,当Bi元素的含量小于化学计量比时,Bi_2WO_6的晶体结构发生了微小变形,Bi元素含量对Bi_2WO_6的显微结构影响不大,但会影响产品氧空位的含量和光吸收性能,并有效抑制电子空穴的复合.Bi_(1.89)WO_6产品的光催化性能最佳,可见光照射180 min后,可降解98%的罗丹明B.采用适当方法,使产品具有氧空位和非化学计量是获得高光催化活性材料的一种有效方法.