Dynamic evanescent phonon coupling across the La(1-x)Sr(x)MnO3/SrTiO3 interface

The transport and magnetic properties of correlated La0.53Sr0.47MnO3 ultrathin films, grown epitaxially on SrTiO3, show a sharp cusp at the structural transition temperature of the substrate. Using a combination of experiment and first principles theory we show that the cusp is a result of evanescent cross-interface coupling between the charge carriers in the film and a soft phonon mode in the SrTiO3, mediated through linked oxygen octahedral motions. The amplitude of the mode diverges at the transition temperature, and phonons are launched into the first few atomic layers of the film, affecting its electronic state.     

Ideal soft mode-type quantum phase transition and phase coexistence at quantum critical point in 18O-exchanged SrTiO3

The quantum ferroelectric phase transition of 18O-exchanged SrTiO3 (x% exchanged SrTiO3 is abbreviated as STO18-x) was investigated by Raman scattering as a function of x. The result indicates the ideal soft mode-type quantum ferroelectric phase transition of STO18-x, where the 18O exchange enhances the softening of the soft mode by the suppression of quantum fluctuation. In the vicinity of the quantum critical point (x approximately xc=33%), the system results in the ferroelectric-paraelectric phase coexistence state, in clear contrast to the homogeneous ferroelectric phase in STO18-x, whose x is sufficiently larger than xc. Simultaneously, the softening of the soft mode becomes strongly rounded with the underdamped oscillation. The present result indicates that the sensitivity of the soft phonon vibration to the mass disorder is dramatically enhanced in the vicinity of the quantum critical point.     

Negative spin polarization and large tunneling magnetoresistance in epitaxial Co/SrTiO(3)/Co magnetic tunnel junctions

We perform an ab initio study of spin-polarized tunneling in epitaxial Co/SrTiO(3)/Co magnetic tunnel junctions with bcc Co(001) electrodes. We predict a large tunneling magnetoresistance in these junctions, originating from a mismatch in the majority- and minority-spin bands both in bulk bcc Co and at the Co/SrTiO(3)/Co interface. The intricate complex band structure of SrTiO(3) enables efficient tunneling of the minority d electrons which causes the spin polarization of the Co/SrTiO(3)/Co interface to be negative in agreement with experimental data. Our results indicate that epitaxial Co/SrTiO(3)/Co magnetic tunnel junctions with bcc Co(001) electrodes are a viable alternative for device applications.     

Metal-insulator transition in SrTiO(3-x) thin films induced by frozen-out carriers

We report optical, electrical and magnetotransport properties of oxygen deficient SrTiO(3) (SrTiO(3-x)) thin films fabricated by pulsed laser deposition technique. The oxygen vacancies (O(vac)) in the thin film are expected to be uniform. By comparing its electrical properties to those of bulk SrTiO(3-x), it was found that O(vac) in bulk SrTiO(3-x) is far from uniform over the whole material. The metal-insulator transition (MIT) observed in the SrTiO(3-x) film was found to be induced by the carrier freeze-out effect. The low temperature frozen state can be reexcited by Joule heating, electric and intriguingly magnetic field.     

Photoemission from buried interfaces in SrTiO3/LaTiO3 superlattices

We have measured photoemission spectra of SrTiO3/LaTiO3 superlattices with a topmost SrTiO3 layer of variable thickness. A finite coherent spectral weight with a clear Fermi cutoff was observed at chemically abrupt SrTiO3/LaTiO3 interfaces, indicating that an "electronic reconstruction" occurs at the interface between the Mott insulator LaTiO3 and the band insulator SrTiO3. For SrTiO3/LaTiO3 interfaces annealed at high temperatures (approximately 1000 degrees C), which leads to Sr/La atomic interdiffusion and hence to the formation of La(1-x)Sr(x)TiO3-like material, the intensity of the incoherent part was found to be dramatically reduced whereas the coherent part with a sharp Fermi cutoff was enhanced due to the spread of charge. These important experimental features are well reproduced by layer dynamical-mean-field-theory calculation.     

应力作用下铁电超晶格BaTiO3/SrTiO3的结构和极化的第一性原理研究

通过第一性原理计算，研究了在不同应力作用下铁电超晶格BaTiO₃/SrTiO₃的结构以及自发极化的变化.结果显示，在应力作用下，晶格发生变形，并且沿着c轴在Ti原子和O原子之间电荷发生传输.随着应力的增加，超晶格中各类原子沿着c轴的位移都会有不同程度上的增加，造成了铁电超晶格的自发极化不断提高.此外，在该模型中，通过变化所施加的应力，可以控制超晶格的极化性质.     

Strain-gradient-induced polarization in SrTiO3 single crystals

Piezoelectricity is inherent only in noncentrosymmetric materials, but a piezoelectric response can also be obtained in centrosymmetric crystals if subjected to inhomogeneous deformation. This phenomenon, known as flexoelectricity, can significantly affect the functional properties of insulators, particularly thin films of high permittivity materials. We have measured strain-gradient-induced polarization in single crystals of paraelectric SrTiO3 as a function of temperature and orientation down to and below the 105 K phase transition. Estimates were obtained for all the components of the flexoelectric tensor, and calculations based on these indicate that local polarization around defects in SrTiO3 may exceed the largest ferroelectric polarizations. A sign reversal of the flexoelectric response detected below the phase transition suggests that the ferroelastic domain walls of SrTiO3 may be polar.     

弱耦合多原子半无限晶体中的表面极化子的有效势

本文研究弱耦合多原子半无限晶体中表面极化子的性质。采用线性组合算符和幺正变换导出表面极化子的的有效势。     

Electronic and magnetic reconstructions in La0.7Sr0.3MnO3/SrTiO3 heterostructures: a case of enhanced interlayer coupling controlled by the interface

We report on the magnetic coupling of La0.7Sr0.3MnO3 layers through SrTiO3 spacers in La0.7Sr0.3MnO3/SrTiO3 epitaxial heterostructures. Combined aberration-corrected microscopy and electron-energy-loss spectroscopy evidence charge transfer to the empty conduction band of the titanate. Ti d electrons interact via superexchange with Mn, giving rise to a Ti magnetic moment as demonstrated by x-ray magnetic circular dichroism. This induced magnetic moment in the SrTiO3 controls the bulk magnetic and transport properties of the superlattices when the titanate layer thickness is below 1 nm.     

SrTiO3：Cr^3＋晶体荧光光谱及荧光寿命的热效应

测量了SrTiO~3:Cr(3+)晶体5～200K的荧光光谱和寿命。并用单声子吸收与发射过程相关的电子振动跃迁理论较好地解释了150K以下荧光寿命随温度变化的规律。     

High mobility in LaAlO3/SrTiO3 heterostructures: origin, dimensionality, and perspectives

We have investigated the dimensionality and origin of the magnetotransport properties of LaAlO3 films epitaxially grown on TiO2-terminated SrTiO3(001) substrates. High-mobility conduction is observed at low deposition oxygen pressures (P(O2)<10(-5) mbar) and has a three-dimensional character. However, at higher P(O2) the conduction is dramatically suppressed and nonmetallic behavior appears. Experimental data strongly support an interpretation of these properties based on the creation of oxygen vacancies in the SrTiO3 substrates during the growth of the LaAlO3 layer. When grown on SrTiO3 substrates at low P(O2), other oxides generate the same high mobility as LaAlO3 films. This opens interesting prospects for all-oxide electronics.     

Electric-field-induced soft-mode hardening in SrTiO3 films

We have studied electric-field-induced Raman scattering in SrTiO3 thin films using an indium-tin-oxide/SrTiO3/SrRuO3 structure grown by pulsed laser deposition. The soft mode polarized along the field becomes Raman active. Experimental data for electric-field-induced hardening of the soft modes and the tuning of the static dielectric constant are in agreement described by the Lyddane-Sachs-Teller formalism. The markedly different behavior of the soft modes in thin films from that in the bulk is explained by the existence of local polar regions.     

Mg2+、Al3+离子增强SrTiO3∶Pr3+荧光体发光性能的研究

采用溶胶凝胶法成功制备了SrTiO3∶Pr3+、SrTiO3∶Pr3+, Mg2+ 及SrTiO3∶Pr3+, Al3+荧光粉.通过XRD、PL谱及第一性原理计算对样品的晶体结构、光谱特性及发光增强机制进行了研究.研究结果表明：共掺杂后,SrTiO3∶Pr3+荧光粉为单一组成的SrTiO3立方相,主发射锋位于617 nm, 对应于Pr3+离子的1D2→3H4跃迁发射.SrTiO3∶Pr3+, Mg2+ 及SrTiO3∶Pr3+, Al3+荧光粉的发光强度分别是SrTiO3∶Pr3+荧光粉发光强度的7倍和2倍,但主要发光机制没有改变.Mulliken布局分析表明,Mg2+、Al3+离子的掺入使SrTiO3∶Pr3+荧光粉中Ti-O及Pr-O键的化学键增强、键长变短,SrTiO3∶Pr3+基质向Pr3+离子发光中心的能量传递效率提高,导致SrTiO3∶Pr3+, Mg2+ 及SrTiO3∶Pr3+, Al3+荧光粉的发光效率提高.     

Strain-induced properties of epitaxial VOx thin films

We have grown VOx thin films on different substrates in order to investigate the influence of epitaxial strain on the transport properties. We found that the electric conductivity is much larger for films grown under compressive strain on SrTiO3 substrates, as compared to bulk material and VOx films grown under tensile strain on MgO substrates. A clear crossover from metallic to semiconducting behavior is observed when increasing the oxygen content x. Apparently, the application of strain induces a Mott-Hubbard insulator-to-metal transition in VOx<1. The VOx/SrTiO3 films show an unexpected large positive magnetoresistance effect at low temperatures, which is not found in the VOx films grown under tensile strain on MgO or on a substrate with a similar lattice parameter.     

Origin of metallic states at the heterointerface between the band insulators LaAlO3 and SrTiO3

We have studied the electronic structure at the heterointerface between the band insulators LaAlO3 and SrTiO3 using in situ photoemission spectroscopy. Our experimental results clearly reveal the formation of a notched structure on the SrTiO3 side due to band bending at the metallic LaAlO3/TiO2-SrTiO3 interface. The structure, however, is absent at the insulating LaAlO3/SrO-SrTiO3 interface. The present results indicate that the metallic states originate not from the charge transfer through the interface on a short-range scale but from the accumulation of carriers on a long-range scale.     

Unusual behavior of the ferroelectric polarization in PbTiO3/SrTiO3 superlattices

Artificial PbTiO3/SrTiO3 superlattices were constructed using off-axis rf magnetron sputtering. X-ray diffraction and piezoelectric atomic force microscopy were used to study the evolution of the ferroelectric polarization as the ratio of PbTiO3 to SrTiO3 was changed. For PbTiO3 layer thicknesses larger than the 3-unit cell SrTiO3 thickness used in the structure, the polarization is found to be reduced as the thickness is decreased. This observation confirms the primary role of the depolarization field in the polarization reduction in thin films. For the samples with ratios of PbTiO3 to SrTiO3 of less than one, a surprising recovery of ferroelectricity that cannot be explained by electrostatic considerations was observed.     

表面修饰SrTiO3光催化剂纳米碳管的光电化学嵌锂特性

采用直接水解沉淀的方法制备了钙钛矿型SrTiO3纳米粒子,并将其修饰在纳米碳管表面形成SrTiO3/CNTs纳米复合材料,研究了SrTiO3/CNTs电极在氙灯照射下的光电化学嵌锂特性．实验结果表明,光照射对CNTs电极的嵌锂容量影响不大,而SrTiO3/CNTs电极受光照时的嵌锂容最高达251 mAh/g,远高于无光照下的嵌锂容量(170 mAh/g)．循环伏安测试也表明光照射可显著提高嵌脱锂反应电流．这可归因于SrTiO3光催化剂受光照射而诱发的纳米碳管嵌锂反应．     

水热法制备表面修饰的钛酸锶纳米微粉

以工业原料和常用试剂ＴｉＣｌ４、Ｓｒ（）ＮＯ３）２和ＫＯＨ为基础原料，通过添加表面活性剂十二烷基苯磺酸（ＤＢＳ），并采用制备出表面包裹有ＤＢＳ的钛酸锶纳米微粉姘应用红外光谱，Ｘ射线衍射谱，透射电子显微镜，热分析等一系列手段对其微结构进行了表征。结果表明：样品为表面包裹ＤＢＳ的钛酸锶纳同粉，其形态较为规则，粒度分布较窄，单分散性较好，粒子的平均粒径为１２０ｍｍ，包裹膜的平均厚度为６ｎｍ左右，根据Ｘ光     

Multiple time scales in diffraction measurements of diffusive surface relaxation

We grew SrTiO3 on SrTiO3(001) by pulsed laser deposition, using x-ray scattering to monitor the growth in real time. The time-resolved small-angle scattering exhibits a well-defined length scale associated with the spacing between unit-cell high surface features. This length scale imposes a discrete spectrum of Fourier components and rate constants upon the diffusion equation solution, evident in multiple exponential relaxation of the "anti-Bragg" diffracted intensity. An Arrhenius analysis of measured rate constants confirms that they originate from a single activation energy.     

Imaging the phase separation in atomically thin buried SrTiO(3) layers by electron channeling

A phase-separation instability, resulting in the dewetting of thin SrTiO(3) films grown on Si(100) is shown by scanning transmission electron microscopy. Plan-view imaging of 1-nm thick, buried SrTiO(3) films was achieved by exploiting electron channeling through the substrate to focus the incident 0.2 nm beam down to a 0.04 nm diameter, revealing a nonuniform coverage by epitaxial SrTiO(3) islands and 2 x 1 Sr-covered regions. Density-functional calculations predict the ground state is a coexistence of 2 x 1 Sr-reconstructed Si and Sr-deficient SrTiO(3), in correspondence with the observed islanding.