A spin-selective approach for surface states at Co nanoislands

During recent years the surface electronic states of cobalt nanoislands grown on Cu(111) and Au(111) have been extensively studied and still yield fascinating results. Among magnetic surfaces, cobalt islands are particularly appealing because of their spin-polarized electronic states near the Fermi energy, involving localized d states of minority character, as well as free-like s–p states of majority character. We show here that these states are a sensitive probe to minute changes of structural details such as strain and stacking, and therefore constitute an ideal playground to study the interplay between structural and spin-related properties. Due to their size, cobalt islands on Cu(111) offer the additional opportunity to host single-magnetic adsorbates suitable for spin-polarized scanning tunneling microscopy and spectroscopy (SP-STM and SP-STS). We establish here that, in an energy interval just below the Fermi level, the spin-polarization of a transition-metal atom is governed by surface-induced states opposite in sign compared to the island, while the spin-polarization of Co-Phthalocyanine molecules is governed by molecular states. This opens up interesting perspectives for controlling and engineering spin-polarized phenomena at the nanoscale.     

Raman spectroscopy and electroreflectance studies of self-assembled SiGe nanoislands grown at various temperatures

SiGe nanoislands grown in a silicon matrix at temperatures of 300 to 600°C are studied using Raman spectroscopy and electroreflectance. For islands grown at relatively low temperatures (300–500°C), phonon bands are observed to have a doublet structure. It is shown that changes in the percentage composition, size, and shape of nanoislands and, hence, in the elastic stresses (depending on the growth temperature of the structures) have a significant effect on the energies of optical electronic interband transitions in the islands. As a consequence, the resonance conditions for Raman scattering also change. It is found that interdiffusion from the silicon substrate and the cover layer (determining the mixed composition of SiGe islands) is of importance even at low growth temperatures of nanostructures (300–400°C).     

Equilibrium shape and size of supported heteroepitaxial nanoislands

We study the equilibrium shape, shape transitions and optimal size of strained heteroepitaxial nanoislands with a two-dimensional atomistic model using simply adjustable interatomic pair potentials. We map out the global phase diagram as a function of substrate-adsorbate misfit and interaction. This phase diagram reveals all the phases corresponding to different well-known growth modes. In particular, for large enough misfits and attractive substrate there is a Stranski-Krastanow regime, where nano-sized islands grow on top of wetting films. We analyze the various terms contributing to the total island energy in detail, and show how the competition between them leads to the optimal shape and size of the islands. Finally, we also develop an analytic interpolation formula for the various contributions to the total energy of strained nanoislands.     

Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands

The photoluminescence spectra of structures with self-assembled GeSi/Si(001) islands are investigated as functions of the growth temperature. It is shown that the shift of the peak of photoluminescence from islands toward lower energies on decreasing the growth temperature is due to the suppression of Si diffusion into islands and an increase in the fraction of Ge in islands. A photoluminescence signal from the GeSi islands is found in the region of energies down to 0.6 eV, which is considerably smaller than the band-gap width in bulk Ge. The position of the peak of photoluminescence from islands is described well by the model of a real-space indirect optical transition with account of the real composition and elastic strains of the islands. Mono-and multilayer structures are obtained with self-assembled GeSi/Si(001) nanoislands exhibiting a photoluminescence signal in the region 1.3–2 μm at room temperature.     

Enhanced Raman scattering of graphene on Ag nanoislands

The effect of Ag nanoislands on the Raman of graphene was investigated in this work. Compared with that on the bare silicon wafer, Raman enhancement was observed in the graphene film that covered on Ag/Si surface with nanoscale Ag islands, which would be induced by the localized plasmon resonance in Ag nanostructures. The interaction between the graphene sheet and Ag/Si substrate was further studied. The peak shift and line shape of Raman spectroscopy indicated a nonuniform strain distribution in the Ag/Si supported graphene film.     

Preparation and characterization of C54 TiSi2 nanoislands on Si (1 1 1) by laser deposition of TiO2

We present the preparation of C54 TiSi₂ nanoislands on Si (1 1 1) with a method of the pulsed laser deposition of titanium oxide thin films. The TiO₂ thin films with nominal thicknesses of 1 nm on Si (1 1 1) were annealed at 850 °C for about 4 h in situ. The X-ray diffraction patterns and the X-ray photoelectron spectra indicate that the nanoislands are in C54 TiSi₂ phase. The characterization using a scanning tunneling microscope shows that the nanoislands with triangular, polygonal and rod-like shapes on Si (1 1 1) exhibit the Volmer-Weber growth mode. The sizes of the polygonal islands distribute in two separated ranges. For the small islands, they have a narrow lateral size distribution centered at 4 nm and a height range in 0.6-3.6 nm, while for the large islands, their lateral sizes are in the range of 12-40 nm and the heights in the range of 4-9 nm. The sizes of the well-shaped triangular islands are intermediate with the lateral sizes in range of 5-20 nm and the heights of 2-3.5 nm. The rod-like islands are about 50-200 nm in length, 5 nm in height and about 15-20 nm in width. The origination of the various shapes of the nanoislands is attributed to the symmetry of Si (1 1 1) substrate and the lattice mismatch between the C54 TiSi₂ and the Si (1 1 1) surface.     

Photofield emission from SiGe nanoislands under green light illumination

Photofield emission from SiGe nanoislands formed by molecular beam epitaxy (MBE) have been investigated. Two types of nanoislands, namely the domes and pyramids with different heights, have been addressed. It was found that the arrays of SiGe nanoislands exhibited a low onset voltage for field emission. The increase of emission current and the decrease of the curve slope in Fowler-Nordheim coordinates under green light illumination have been revealed. Electron field emission and photoemission from SiGe nanoislands have been explained based on the energy band diagram of Si-Ge heterostructure and some energy barriers have been determined.     

Peculiarities of the initial stage of growth of niobium-based nanostructures on a Si(111)-7 × 7 surface

The initial stage of growth of nanoislands prepared by thermal deposition of niobium on the reconstructed surface of Si(111)-7 × 7 in ultrahigh vacuum is experimentally investigated. The morphological and electrophysical properties of niobium-based nanostructures are studied by means of low-temperature scanning tunneling microscopy and spectroscopy. It is found that upon the deposition of niobium on a substrate at room temperature, clusters and nanoislands are formed on the silicon surface, having a characteristic lateral size of 10 nm with the metallic type of tunneling conductivity at low temperatures. Upon the deposition of niobium on a heated substrate, quasi-one-dimensional (1D) and quasi-two-dimensional (2D) structures with typical lateral dimensions of up to 200 nm and three-dimensional pyramidal islands with semiconducting type of tunneling conductivity at low temperatures are formed.     

Formation of nanoislands in the course of copper deposition on a Cu(111)-(9 × 9)-Ag surface

The process of copper deposition on a structured Cu(111)-(9 × 9)-Ag surface, which represents a (9 × 9) loop dislocation network, is studied by scanning tunneling microscopy. It is found that, when the substrate temperature is 100 K and the copper coverage is 0.1–0.4 of a monolayer, islands of a size no greater than 50 Å are formed at the Ag/Cu(111) interface. The islands remain stable as the sample is heated to room temperature. The shape and boundaries of the nanoislands follow the initial surface superstructure and are determined by the nonuniformity of the interaction of the upper silver layer with the copper substrate. The mechanism of island formation and the origin of their stability are explained in terms of the atom exchange between the adsorbate and substrate.     

Interplay of electronic,magnetic and structural properties of surface-supported clusters

We present first theoretical evidence revealing the influence of structural changes on the spin-polarized surface states of large Co nanoislands grown on Cu(111). The minority density of electronic states possesses a pronounced peak whose energetic position depends sensitively on the Co layers stacking order. Our results suggest a way to deduce the stacking order of large Co nanoislands using scanning tunnelling microscopy/spectroscopy.     

Phonon localization in Ge nanoislands and its manifestation in Raman spectra

Multilayer structures with germanium nanoislands that are formed on the silicon (111) surface upon submonolayer deposition by molecular-beam epitaxy have been investigated using Raman spectroscopy. To interpret the experimental Raman spectra, numerical calculations of the spectra have been performed for nanoislands containing from several to several hundred germanium atoms. The calculations demonstrate that the in-plane sizes of nanoislands (with sizes less than 2–3 nm) substantially affect the frequencies of phonons localized in these nanoislands. The experimental Raman spectra confirm the occurrence of the quantum size effect.     

Formation of CrSi2 nanoislands on Si(111)7 × 7 and epitaxial growth of silicon overlayers in Si(111)/CrSi2 nanocrystallites/Si heterostructures

Low-energy electron diffraction and differential reflectance spectroscopy are used to study the self-formation of chromium disilicide (CrSi₂) nanoislands on a Si(111) surface. The semiconductor properties of the islands show up even early in chromium deposition at a substrate temperature of 500°C, and the two-dimensional growth changes to the three-dimensional one when the thickness of the chromium layer exceeds 0.06 nm. The maximal density of the islands and their sizes are determined. The MBE growth of silicon over the CrSi₂ nanoislands is investigated, an optimal growth temperature is determined, and 50-nm-thick atomically smooth silicon films are obtained. Ultraviolet photoelectron spectroscopy combined with the ion etching of the specimens with embedded nanocrystallites demonstrates the formation of the valence band, indicating the crystalline structure of the CrSi₂. Multilayer epitaxial structures with embedded CrSi₂ nanocrystallites are grown.     

Evidence of strong sequential band filling at interface islands in asymmetric coupled quantum wells

We report the observation of relative saturation among excitonic emission peaks at different sets of interface islands in growth-interrupted asymmetric-coupled quantum well GaAs/Al_0.2Ga_0.8As structures. The saturation is due to sequential filling of excitonic states at different sets of interface islands. In contrast to free excitonic states, the small total area density of excitonic states at the interface islands makes their filling observable at much lower excitation levels. As a result of the relative saturation, an effective blue shift of the apparent excitonic emission peak at the islands, with a magnitude as large as ∼6.1 meV is observed when the excitation intensity increases from ∼1.6 to ∼215 W cm⁻². The highest intensity required to observe the effective blue shift is about two orders of magnitude lower than that needed to observe a similar effect in a free excitonic emission peak.     

Observation of finite-size effects on a structural phase transition of 2D nanoislands

We study a reversible, temperature-driven structural surface phase transition of Pb/Si(111) nanoislands with a variable-temperature scanning tunneling microscope. Our quantitative measurements indicate that the transition temperature decreases with decreasing island and domain size. The boundaries of the nanoislands also influence the transition. Careful examination of the change in the interior structure of nanoislands near the transition temperature allows us to image the effects of the thermal fluctuations.     

Self-assembled growth of nanostructural Ge islands on bromine-passivated Si(111) surfaces at room temperature

We have deposited relatively thick (∼60 nm) Ge layers on Br-passivated Si(111) substrates by thermal evaporation under high vacuum conditions at room temperature. Ge has grown in a layer-plus-island mode although it is different from the Stranski-Krastanov growth mode observed in epitaxial growth. Both the islands and the layer are nanocrystalline. This appears to be a consequence of reduction of surface free energy of the Si(111) substrate by Br-passivation. The size distribution of the Ge nanoislands has been determined. The Br-Si(111) substrates were prepared by a liquid treatment, which may not produce exactly reproducible surfaces. Nevertheless, some basic features of the nanostructural island growth are reasonably reproducible, while there are variations in the details of the island size distribution.     

Large scale ordered topographical and chemical nano-features from anodic alumina templates

We have used ordered anodic alumina membranes as masks to create large scale ordered arrays of either holes or chemical islands on silica. Regularly spaced holes were obtained by direct etching of silica/silicon or glass substrates through the membranes used as etching masks. To create an array of chemically functional islands, the membrane is first glued on the substrate using a soft polymer and subsequently the polymer is etched gently though the mask. Finally organo-silane molecules are deposited through the alumina/polymer hybrid mask and the mask is removed chemically leaving nanoislands on the substrate. We anticipate that this technique will be useful in future biological and biomedical applications.     

Field-induced expansion deformation in Pb islands on Cu(111): evidence from energy shift of empty quantum-well states

We use scanning tunneling microscopy and spectroscopy to measure the energy shift of empty quantum-well (QW) states in Pb islands on the Cu(111) surface. It is found that, with an increase of the electric field, the behavior of the energy shift can be grouped into two different modes for most QW states. In the first mode, the state energy moves toward high energy monotonically. In the second mode, the state energy shifts to a lower energy initially and then turns around to a higher energy. Moreover, we have observed that the QW states of higher energy behave in preference to the first mode, but they gradually change to the second mode as the Pb island becomes thicker. This thickness-dependent behavior reflects the existence of local expansion in the Pb islands, due to the electric field, and that the expansion is larger for a thicker island. QW states can thus be used for studying the localized lattice deformation in the nanometer scale.     

Photoluminescence of Ge(Si)/Si(0 0 1) self-assembled islands in the near infra-red wavelength range

The dependence of photoluminescence spectra of structures with GeSi/Si(0 0 1) self-assembled nanoislands on growth temperature has been investigated. It was shown that the redshift of the island-related photoluminescence peak with a decrease of the growth temperature is associated with suppression of Si diffusion in the islands and an increase of Ge content in them. For the first time a photoluminescence signal from SiGe islands was observed at energies much lower than the Ge band gap. The energy position of the island-related photoluminescence peak is well described by the model of optical transition, which is indirect in real space. The photoluminescence signal at 1.55 μm from GeSi/Si(0 0 1) self-assembled islands was obtained up to room temperature.     

Anisotropic charge ordering on the gallium surface

Low-temperature scanning tunneling microscopy of atomically flat Ga(001) islands revealed the 2D electronic superlattice composed of stripe domains. Tunnel spectroscopy of these surface electrons indicates the formation of a 2D charge-ordered state of Wigner-crystal type driven by competition of short-range and long-range Coulomb energies. At the boundaries of stripe domains the energy spectra exhibit splitting due to charged excitonic states and shift due to charge doping, altogether indicating the self-assembly of 1D hole stripes. The size distribution of stripe domains is broadened around 4a.