人工裁剪制备石墨纳米结构

采用不同的方法裁剪高定向热解石墨（HOPG），制备纳米尺寸的石墨条.首先,发现用聚焦离子束（镓离子）刻蚀高定向热解石墨，可以得到边缘整齐程度在几十纳米的石墨条,另外,用 电子束曝光和反应离子刻蚀的工艺，可以得到最小尺寸为50 nm的纳米石墨图型 (nano-size d graphite pattern,纳米尺寸的多层石墨结构).采用了三种不同的方案制备反应等离子刻 蚀过程中需要的掩膜，分别是PECVD生长的SiO₂掩膜，磁控溅射的方法生长的Si O₂掩膜和PMMA光刻胶掩膜，并将三种方案的刻蚀结果做了对比. 关键词： 高定向热解石墨 聚焦离子束刻蚀 电子束曝光 反应离子刻蚀     

利用干涉光刻技术制备LED表面微纳结构

为了制备大面积周期性微纳米结构以提高LED的发光效率,建立了劳厄德(Lloyd)干涉光刻系统。简单分析了该干涉光刻系统的工作原理,并介绍了利用干涉曝光工艺制备一维光栅、二维点阵、孔阵列等纳米结构图形的具体实验过程。最后对纳米图形进行结构转移,制备出了金属纳米结构。实验结果表明:利用劳厄德干涉光刻系统,可以在20 mm×20 mm大小的ITO衬底上稳定制备出周期为450 nm的均匀光栅或二维点阵列图形结构,它们的占空比也是可以调节变化的。     

PED沉积La-Sr-Cu-O薄膜表面的有序纳米结构

采用脉冲电子束沉积(PED)技术在Si(100)衬底上生长La_Sr_Cu_O薄膜，在750℃生长温度下获得具有有序纳米结构的表面形貌.采用聚集离子束(FIB)技术对获得的纳米结构进行表征，结果表明，这种有序的纳米结构是由于Si衬底和La_Sr_Cu_O薄膜之间的热膨胀系数和晶格的 失配引起的纳米裂纹.在这些纳米裂纹处，La_Sr_Cu_O成核生长获得独立的纳米线.通过控制 这种有序的纳米结构的生长，这种有序的纳米结构可以用来构造弱连接形成的器件. 关键词： 脉冲电子束沉积 La_Sr_Cu_O薄膜 纳米结构     

改性光刻胶制备纳米压印模版

制备纳米压印中的模版是压印技术的基本条件.目前很多压印模版是利用高硬度材料制作的，但是这些材料比较难以加工，从而限制了纳米压印技术的发展.提出一种利用光刻胶制备纳米压印模版的方法.利用聚焦离子束对光刻胶的改性作用，控制加工的条件，将柔性的光刻胶改性为硬度很高的材料，从而形成纳米压印模版.这种方法具有速度快、制备简单等特点，是一种新颖的加工方式，扩展了聚焦离子束的加工范围，可用于其他的纳米加工领域. 关键词： 纳米压印 光刻胶 聚焦离子束 纳米孔阵列     

半导体量子阱材料微加工光子晶体的光学特性

利用聚焦离子束刻蚀方法和电子束制版结合干法刻蚀方法制备了二维近红外波段光子晶体，发现两种方法都可以制备出均匀的二维光子晶体，聚焦离子束方法操作简单，电子束制版结合干法刻蚀方法操作步骤复杂.光谱测试表明，利用聚焦离子束方法在有源材料上刻蚀的光子晶体不发光，而电子束制版结合干法刻蚀方法制备的小晶格常数光子晶体即使有些无序，其出光效率也提高到没有光子晶体时的两倍.对两种方法所加工的光子晶体不发光和提高出光效率的机理进行了分析. 关键词： 聚焦离子束 电子束制版 光子晶体 出光效率     

多孔氧化铝膜上自组织生长Sn纳米点阵列的研究

以多孔阳极氧化铝膜(porous anodic alumina, PAA)为基片，采用真空电子束蒸发的方法在多孔氧化铝膜上制备了高度有序度的Sn纳米点阵列.锡纳米点阵的XRD与块体锡的完全相同，扫描电镜(SEM)测试结果表明，所制备的金属Sn纳米点阵与阳极氧化铝膜的多孔阵列具有完全相同的有序结构，阵列中每个Sn纳米粒子的形状为球形的，其直径接近于PAA膜的孔直径.对Sn纳米点阵形成过程和形成机理进行了讨论.     

一种带孔箔聚焦可重复运行的分离腔振荡器

 设计了一种有孔箔聚焦电子束的高功率分离腔振荡器，并对其进行了理论和数值研究。这种器件采用孔箔聚焦电子束，可以增加重复运行的次数，有效延长导电薄膜的寿命，而且不需要外加磁场聚焦电子束，波束相互作用区短，功率容量大，结构简单，输出信号稳定。还设计了电子束收集极来减小反射电子对器件的影响。对同一器件使用不同电压和电流的电子束，可以得到从50~900MW功率的微波输出。     

Au/Ag纳米颗粒的成像技术与应用

基于10 nm尺度图形加工技术,通过改变金属纳米结构的大小和形貌,利用金属纳米结构的表面等离子体共振性能开发出SEM纳米彩色图片制作技术,使得图形的像素在60 nm尺度可控(约100万dpi)。利用图像处理技术可以快速生成加工版图,而通过电子束曝光和沉积技术则能够得到结构不同的Au/Ag纳米颗粒。结果表明:由于结构不同的Au/Ag纳米颗粒的表面等离子体共振性能不同,使其发光性能覆盖了可见光波段。本文通过改变Au/Ag纳米颗粒的大小,利用图像处理算法对不同大小的Au/Ag纳米颗粒进行排列组合,从而得到SEM纳米彩色图片。     

基于一种新微细加工技术的亚波长光栅的研制

描述了一种新的亚波长光栅的微细加工技术，即电子束（EB）扫描曝光得到相应的亚微米级的线宽图形，再利用快速原子束刻蚀设备获得了高深宽比的立体结构。用此加工技术获得了100nm以下的刻蚀精度，并研制成功亚波长光栅。该亚微米线宽微细加工技术可用于布拉格光栅、半导体激光器、无反射表面等需要亚微米结构的器件中。     

周期场聚焦电子束

引言 自从发现“强聚焦效应”可以应用在粒子加速器内以后,人们知道利用周期磁场能把离子束控制得更细,于是可以减少磁铁的需要量。因此近年来为了改建或新设计各种类型粒子加速器,对周期场聚焦离子束或电子束方面曾进行了很多研究工作。另一方面人们也开始研究用周期电场和磁场聚焦各种电子管内的电子束,例如行波管内电子束的聚焦等。聚焦电子束的主要特点在於必要考虑空间电荷。     

微波等离子体技术在ICF制靶中的应用

为了提高ICF精密制靶的质量,提出用微波等离子体（MP）技术,包括等离子体薄膜制备、等离子体反应性离子束刻蚀、聚焦离子束刻蚀、掺杂纳米金属粉末制备和掺杂纳米金属粉末的表面包覆改性等技术,去加以改进和解决。此方法与其它成膜技术相结合,在ICF精密制靶中得到广泛应用。     

微波等离子体技术在ICF制靶中的应用

 为了提高ICF精密制靶的质量，提出用微波等离子体（MP）技术，包括等离子体薄膜制备、等离子体反应性离子束刻蚀、聚焦离子束刻蚀、掺杂纳米金属粉末制备和掺杂纳米金属粉末的表面包覆改性等技术，去加以改进和解决。此方法与其它成膜技术相结合，在ICF精密制靶中得到广泛应用。     

磁性量子元胞自动机功能阵列的实验研究

采用电子束光刻、热蒸镀和剥离工艺在室温下制备了多组磁性量子元胞自动机器件功能阵列. 实验研究了曝光剂量和曝光时间对三个不同间距参数磁性量子元胞自动机阵列图案的影响, 发现100 pA电子束束流和0.38 μs曝光时间可获得理想的阵列图案. 对制备的反相器阵列结构进行了磁力显微测试, 结果显示了正确的逻辑功能, 成功实现了不同间距参数功能阵列的实验制备. 此外, 实验还发现纳磁体阵列制备中容易出现缺陷, 模拟结果表明丢失纳磁体缺陷导致了信号传递反相.     

掺Yb光纤激光器阵列谱合成系统的光束传输模型及光束特性分析

建立了由掺Yb光纤激光器阵列、变换透镜、闪耀光栅和输出耦合镜组成的光束谱合成系统的光束传输模型.在考虑光栅角色散、光栅刻槽倾角误差和光栅衍射效率情况下,利用光线追迹法、衍射积分方法、光束非相干叠加原理和强度二阶矩方法,推导出高斯光束非平行倾斜入射到闪耀光栅的相位变化公式以及谱合成光束的光强分布解析表达式.分析了高斯光束非平行倾斜入射到光栅后,光栅角色散、光栅衍射效率和光栅刻槽倾角误差对掺Yb光纤激光器谱合成系统输出光束特性的影响.研究结果表明,谱合成光束具有与单根光纤激光器几乎相同的光束质量;光栅角色散对合成光束特性的影响可忽略;随着光栅刻槽倾角误差的增大,谱合成光束的光束质量明显变差;当光栅刻槽倾角误差较大时,必须考虑光栅衍射效率对合成光束特性的影响. 关键词： 掺Yb光纤激光器 非平行倾斜入射 光束谱合成 光束质量     

Fabrication of Step-and-Flash Imprint Lithography (S-FIL) templates using XeF<Subscript>2</Subscript> enhanced focused ion-beam etching

The fabrication of Step-and-Flash Imprint Lithography (S-FIL) templates with line widths of 50 nm is described in this work. The structures have been patterned using a Ga⁺ focused ion beam (FIB) in a quartz template. FIB milling is generally accompanied with re-deposition effects, which represent a hindrance to densely patterned nanostructures required in most NIL applications. To reduce these re-deposition effects, in this research, xenon difluoride (XeF₂) enhanced FIB etching was applied that also increases the material removal rates in comparison to pure kinetic ion sputtering. To optimise the process when using XeF₂ gas the following ion scanning parameters have been examined: ion dose, beam current, dwell time and beam overlap (step size). It has been found that the assisting gases at very low doses do not bring significant etching enhancements whilst the sputtering rates have increased at high doses. Using the XeF₂ gas-assisted etching, FIB structuring has been used to fabricate <100 nm structures onto quartz S-FIL templates. The presence of XeF₂ considerably enhances the etching rate of quartz without any significant negative effects on the spatial resolution of the FIB lithographic process and reduces the template processing time.     

Three-dimensional vertical ZnO transistors with suspended top electrodes fabricated by focused ion beam technology

Three-dimensional(3D)vertical architecture transistors represent an important technological pursuit,which have distinct advantages in device integration density,operation speed,and power consumption.However,the fabrication processes of such 3D devices are complex,especially in the interconnection of electrodes.In this paper,we present a novel method which combines suspended electrodes and focused ion beam(FIB)technology to greatly simplify the electrodes interconnection in 3D devices.Based on this method,we fabricate 3D vertical core-double shell structure transistors with ZnO channel and Al₂O₃ gate-oxide both grown by atomic layer deposition.Suspended top electrodes of vertical architecture could be directly connected to planar electrodes by FIB deposited Pt nanowires,which avoid cumbersome steps in the traditional 3D structure fabrication technology.Both single pillar and arrays devices show well behaved transfer characteristics with an Ion/Ioff current ratio greater than 106 and a low threshold voltage around 0 V.The ON-current of the 2×2 pillars vertical channel transistor was 1.2μA at the gate voltage of 3 V and drain voltage of 2 V,which can be also improved by increasing the number of pillars.Our method for fabricating vertical architecture transistors can be promising for device applications with high integration density and low power consumption.     

Microfabrication techniques using focused ion beams and emergent applications.

The application of focused ion beam (FIB) machining in several technologies aimed at microstructure fabrication is presented. These emergent applications include the production of micromilling tools for machining of metals and the production of microsurgical tools. An example of the use of microsurgical manipulators in a circulatory system measurement is presented. The steps needed to transform the laboratory fabrication of these tools and manipulators into a routine FIB production process are discussed. The ion milling of three-dimensional cavities by the exact solution of a mathematical model of the FIB deflection is demonstrated. A good agreement between the model calculation and the ion beam control has been obtained for parabolic and cosine cross-section features with planes of symmetry.     

超快贝塞尔光束在硫化锌晶体表面制备纳米孔

硫化锌(ZnS)晶体是重要的宽光谱红外窗口材料,高深径比纳米孔的超快激光制造技术为中红外波导傅立叶变换光谱仪等光子器件的实现提供了重要的技术途径.本文采用中心波长为1030nm、重复频率为100kHz、脉冲宽度为223 fs-20ps可调的Yb:KGW激光光源,用石英锥镜产生高斯-贝塞尔光束,并用4f系统构建了40倍缩...     

Optimized FIB silicon samples suitable for lattice parameters measurements by convergent beam electron diffraction

The aim of this paper is to check the effect of artefacts introduced by focused ion beam (FIB) milling on the strain measurement by convergent beam electron diffraction (CBED). We show that on optimized silicon FIB samples, the strain measurement can be performed with a sensitivity of about 2.5 × 10⁻⁴ which is very close to the theoretical one and we conclude that FIB preparation can be suitable for such measurements in microelectronic devices.

To achieve this, we first used CBED and electron energy loss spectroscopy (EELS) which provide a procedure permitting an exact knowledge of the sample geometry, i.e. the thickness of both amorphous and crystalline layers. This procedure was used in order to measure the FIB-amorphized sidewall layer. It was found that if the FIB preparation is optimized one can reduce this amorphous layer down to around 7 nm on each side. Secondly different preparation techniques (cleavage, Tripod™ and FIB) permit to check if the surface damaged layer introduced by FIB influences the strain state of the sample. Finally, it was found that the damaged layer does not introduce measurable strain in pure silicon but reduces appreciably the quality of the CBED patterns.     

A methodology for the fabrication by FIB of needle-shape specimens around sub-surface features at the nanometre scale

A novel methodology for the preparation by focused ion beam (FIB) of needle-shape specimens in specific sites underneath the sample surface for their study by electron tomography (ET) is proposed. In particular, we demonstrate this methodology for the fabrication of needles containing InAs/InP quantum dots (QDs). The main challenge of this methodology is the location of specific QDs in the FIB equipment, as they are not visible with the secondary electrons detector. In order to overcome this difficulty, a series of marks visible both in conventional transmission electron microscopy and in the FIB are introduced before the preparation of the needles. The conditions for the fabrication by FIB of needles with optimized characteristics for their study by ET are also detailed.