Design, fabrication and characterization of a high-performance microring resonator in silicon-on-insulator

A high-performance microring resonator in a silicon-on-insulator rib waveguide is realized by using the electron beam lithography followed by inductively coupled plasma etching. The design and the experimental realization of this device are presented in detail. In addition to improving relevant processes to minimize propagation loss, the coupling efficiency between the ring and the bus is carefully chosen to approach a critical coupling for high performance operating. We have measured a quality factor of 21,200 and an extinction ratio of 12.SdB at a resonant wavelength of 1549.32nm. Meanwhile, a low propagation loss of 0.89dB/mm in a curved waveguide with a bending radius of 40μm is demonstrated as well.     

High-performance and fabrication friendly polarization demultiplexer

A compact and fabrication friendly polarization demultiplexer (P-DEMUX) is proposed and characterized to enable wavelength-division-multiplexing and polarization-division-multiplexing simultaneously. The proposed structure is composed of a polarization-selective microring resonator in ultrathin waveguide and two bus channels in the silicon nitride-silica-silicon horizontal slot waveguides. In the slot waveguide, the transverse electric (TE) mode propagates through the silicon layer, while the transverse magnetic (TM) mode is confined in the slot region. In the designed ultra-thin waveguide, the TM mode is cut-off. The effective indexes of the TE modes for ultrathin and slot waveguides have comparable values. Thanks for these distinguishing features, the input TE mode can be efficiently filtered through the ultra-thin microring at the resonant wavelength, while the TM mode can directly output from the through port. Simulation results show that the extinction ratio of the proposed P-DEMUX for TE and TM modes are 33.21 dB and 24.97 dB, and the insertion losses are 0.346 dB and 0.324 dB, respectively, at the wavelength of 1551.64 nm. Furthermore, the device shows a broad bandwidth ($>100$ nm) for an extinction ratio (ER) of $>20$ dB. In addition, the proposed P-DEMUX also has a good fabrication tolerance for the waveguide width variation of $-20$ nm$\le \Delta w_{\rm g}\le 20$ nm and the microring width variation of $-20$ nm$\le \Delta w_{\rm r}\le $20 nm for a low insertion loss of $<0.75$ dB and low ER of $<-18$ dB.     

Modeling of coupling loss in ultra-compact SOI microring resonators

Ultra-compact microring resonators, made of high index contrast (HIC)-silicon on insulator (SOI) materials, have become key optical devices in integrated photonics systems. Both computer simulations and actual experiments have showed that coupling loss was a significant contributor to the total losses in ultra-compact microring resonators. In this paper, a computable model derived from step approximation method was present to theoretically determine the coupling loss. Excellent matching results between the model and literatures were achieved. The proposed model can be applied to evaluate the coupling loss for microring resonators with various geometries and guide the design of low loss optical devices based on ultra-compact microring resonators.     

有限元分析法在SOI基微环谐振器设计中的应用

利用有限元法(FEM)分析了大横截面SOI(Silicon-on-insulator)脊型波导的本征模式分布,确定了脊型波导的单模条件。在保证单模传输的情况下,模拟了SOI微环谐振器中波导耦合器的耦合长度、功率耦合系数与波导尺寸和间距的关系。模拟结果表明:对于W=1μm,H=2μm的SOI脊型波导耦合器,耦合长度LC随波导间距d的增加而增大,功率耦合系数随之减小。在波导间距d0.8μm的情况下,耦合长度LC随着归一化脊高r的增加而增大,当d0.8μm时,耦合长度LC随r的增加而减小。模拟结果为SOI微环谐振器的设计和应用提供了理论依据。     

SOI大截面单模脊形X型分支波导的研制

报道了硅片直接键合（ＳＤＢ）ＳＯＩ大截面单模脊形互型分支波导的研制．对于波长为１．３μｍ的光，在θ＝２°小分支角时，这种分支波导的通道串音小于－２０ｄＢ，辐射损耗小于０．３ｄＢ．直通传输损耗小于０．８５ｄＢ／ｃｍ．     

DQPSK demodulation using integrated silicon microring resonators

In this paper, we fabricate an ultra-small 20 Gb/s differential quadrature phase-shift keying (DQPSK) demodulator using silicon based microring resonators and show that the separation between the microring resonance and optical carrier can be tuned for DQPSK demodulation at different bit rates. The double-waveguide microring resonators enable detection of I (in phase) and Q (quadrature phase) signals as well as inverted I and Q signals simultaneously. Experimental verification is performed for DQPSK demodulation using a single waveguide microring. We generate DQPSK signal in a serial configuration and demodulate the I or Q channel by offsetting the resonance peak. The offset between the resonance and center carrier is adjusted to be 4.87 GHz and the phase shift (phase offset) is calculated to be exactly π/4.     

Sensitivity and detection limit of dual-waveguide coupled microring resonator biosensors

We show that a linear relation exists between the device sensitivity and the quality （Q） factor of a dual- waveguide coupled microring resonator optical biosensor when the optimal conditions are satisfied. We also show that the detection limit depends on the loss coefficient and signal-to-nosie ratio （SNR） of the overall system, rather than the circumference of the ring. For a microring resonator sensor whose Q factor is 20000, the detection limit is found to be about 10-7 with 30-dB SNR, which is in good agreement with reported experimental data. These results indicate that loss reduction is the top priority in the design and fabrication of highly sensitive microring resonator optical biosensors.     

硅基槽式微环谐振腔型偏振解复用器全矢量分析

提出一种紧凑型偏振解复用器, 其中两条常规硅基波导作为输入/输出信号通道, 居于其中的槽式微环谐振腔用于偏振态/波长选择组件. 采用全矢量频域有限差分法详细分析了硅基常规及槽波导的模式特性, 结果发现其横磁模的模场布及其有效折射率相似, 而其横电模相应的特性则差异明显, 结果输入横磁模能够在谐振工作波长下从下路端口输出, 而输入横电模与微环耦合可以忽略, 直接从直通端口输出, 从而实现两偏振态的高效分离. 采用全矢量时域有限差分法详细分析了该偏振解复用器的光波传输特性, 结果表明, 当微环半径为3.489 μm时, 在1.55 μm工作波长下, 横磁模与横电模的消光比与插入损耗分别为 ～ 26.12 (36.67) dB与 ～ 0.49 (0.09) dB. 另外, 论文详细讨论了器件关键结构参数的制作容差, 并给出了输入模场在器件中的传输演变情况.     

Characterization of a photonic strain sensor in silicon-on-insulator technology

Recently there has been growing interest in sensing by means of optical microring resonators in photonic integrated circuits that are fabricated in silicon-on-insulator (SOI) technology. Taillaert et al. [Proc. SPIE 6619, 661914 (2007)] proposed the use of a silicon-waveguide-based ring resonator as a strain gauge. However, the strong lateral confinement of the light in SOI waveguides and its corresponding modal dispersion where not taken into account. We present a theoretical understanding, as well as experimental results, of strain applied on waveguide-based microresonators, and find that the following effects play important roles: elongation of the racetrack length, modal dispersion of the waveguide, and the strain-induced change in effective refractive index.     

SOI梯形大截面单模脊形波导的研制

报道了硅片直接键合ＳＯＩ单模梯形大截面脊形波导的研制，对于小长为１．３μｍ的光这种脊形波导的传输损耗小于０．８５ｄＢ／ｃｍ。     

A novel wavelength dispersive device with a dispersive element based on staircase-like straight and parallel arrayed waveguides

We propose a new type of arrayed waveguide grating (AWG) multiplexer/demultiplexer based on modified group refractive index. This device is composed by an array of straight and parallel waveguides of equal length and each waveguide consist of two sections with different width. The length of the two sections are changed from a waveguide to the adjacent one following a linear dependence resulting in a wavelength dispersive waveguide array. An example of the device design for silicon-on-insulator (SOI) platform is provided and numerical simulations have been carried out for various arrayed waveguide parameters. We demonstrate that the group index modification can be used for tailoring device dispersion properties, and that it can also result in new dispersion characteristics predicted numerically not observed in conventional AWGs. Additional advantages are that the demultiplexer does not necessarily require bending waveguide sections as in a conventional AWG (de)multiplexers, and thus yields highly compact devices with potentially very low insertion loss. Channel spacing of 1 nm have been predicted for sub-micron waveguides sizes. In this paper it is also proposed a novel wavefront converter based on waveguide array lens-like element with waveguides broadened sections. Numerical results for different input/output geometries are analized.     

BPM Simulation and Comparison of 1 × 2 Directional Waveguide Coupling and Y-Junction Coupling Silicon-on-Insulator Optical Couplers

For developing large area opto-electronic silicon-on-insulator (SOI) devices, the optical coupler is a basic key device. In this article, the authors design and simulate 1 2 2 directional waveguide coupling and Y-branch coupling optical couplers based on Unibond SOI rib waveguides. The beam propagation method (BPM) is used for light propagation analysis. The simulation results and comparisons of the two kinds of optical couplers are reported. The S-bend waveguide for attaching to the two kinds of SOI optical coupler is also analyzed by BPM. We find that the directional coupler has lower power loss, but the Y-junction coupler is more wavelength insensitive with the same device size and splitting angle. The fabrication tolerance analysis shows Y-junction coupler has better fabrication characteristics.     

Photonic microring resonator modulated resonance response analysis

This paper presents the resonance response analysis of a photonic microring resonator. It covers the mathematical as well as simulation analysis on the modulated signals. The mathematical formulation provides a relation of several microring resonator parameters that could potentially affect the ring resonator performances. The simulation shows a graphical representation of the ring resonator full-width at half-max, quality factor (Q-factor) as well as the depth of the resonance at different modulation voltages applied to the ring. Several parameters have also been altered which is the ring radius, the coupling coefficient of the waveguides as well as the waveguide material group index. With this investigation, we determine the possible cause of the change in Q factor of a silicon microring resonator when the resonance is modulated and the possible solution to minimize the problem.     

Microdisk resonator filters made of dielectric-loaded plasmonic waveguides

Microdisk resonator filters, an alternative to microring resonator filters, are studied by means of vectorial three dimensional finite element method simulations. Their performance characteristics are highlighted for different microdisk radii, and compared with those of the respective, footprint-wise, microring filters. We show that microdisk filters are advantageous, as the resonator involved exhibits smaller radiation losses. Extinction ratios as high as 30 dB are possible by properly tuning the gap separating the waveguide from the microdisk in each case. Transmission dips due to higher-radial-order modes that drastically change the transmission picture appear only for very large microdisk radii.     

Dispersion tailoring and soliton propagation in silicon waveguides

The dispersive properties of silicon-on-insulator (SOI) waveguides are studied by using the effective-index method. Extensive calculations indicate that an SOI waveguide can be designed to have its zero-dispersion wavelength near 1.5 microm with reasonable device dimensions. Numerical simulations show that soliton-like pulse propagation is achievable in such a waveguide in the spectral region at approximately 1.55 microm. The concept of path-averaged solitons is used to minimize the impact of linear loss and two-photon absorption.     

Spectrum reshaping of amplified pulse in silicon nanowaveguide

A device consisting of a cascaded semiconductor optical amplifier (SOA) and silicon on insulator (SOI) optical waveguide is presented to amplify and reshape the frequency spectrum of optical pulses in the picoseconds time duration. Numerical simulations show that the output spectrum of the amplified pulse by SOA can be effectively reshaped by utilizing the SOI waveguide. The length of the SOI waveguide may be judiciously adjusted to significantly reduce the frequency chirp of the output pulse from the SOA resulting in reshaping of the output spectrum. We find that the property of pulse spectrum is sensitive to the input pulse power and its temporal width.     

硅基二氧化硅波导和SOI脊型波导应力双折射研究

采用有限元方法分析了硅基二氧化硅波导和SOI（Silicon on Insulator）脊型波导内部残留热应力引起的双折射.对于硅基二氧化硅波导,应力双折射系数的数量级为10－4,对于上包层为空气的SOI脊型波导,该系数的数量级为10－5,对于上包层为SiO2的SOI脊型波导,该系数的数量级为10－3,可见在硅基二氧化硅波导和上包层为SiO2的SOI脊型波导中产生了大的应力双折射,而在上包层为空气的SOI脊型波导中应力双折射较小.     

全光纤型微环谐振器的研制

环形谐振器因体积小、功能强、结构简洁等优点长期以来一直在光无源、有源器件的设计和制作中发挥着重要的作用。对光纤的弯曲损耗特性进行了深入分析,指出只有采用微细光纤才能降低全光纤法所制作的环形谐振器的尺寸,加宽器件的自由光谱范围(FSR)获得更好的精细度和品质因子。然后,在改进熔融拉锥技术的同时,保持慢变、绝热条件拉制出在80 mm长度范围内具有良好均匀性、半径为5μm的高质量微细光纤,在此基础上采用自缠绕法研制出半径仅为500μm,谐振效果明显加强的全光纤型微环谐振器,从而很好地解决了集成型微环谐振器较高的弯曲损耗和连接损耗问题。     

聚合物波导微环谐振器的无热化设计

从波导微环谐振器的谐振方程出发,推导出了波导微环谐振器的无热化条件和谐振波长温度依赖特性表达式,分析了硅衬底PSQ聚合物波导微环谐振器滤波功能的温度特性。通过选择合适的聚合物衬底来取代传统的硅衬底,可极大地减小聚合物波导微环谐振器的温度敏感性,给出了聚合物衬底选择的方法。研究结果表明,所设计的全聚合物波导微环谐振器,在温度从20～65℃范围内谐振波长漂移量最大值为-0.0085 nm,温度依赖波长漂移率最大值为-0.00090 nm/K,实现了无热化。     

基于绝缘硅的微环谐振可调谐滤波器

采用电子束光刻和感应耦合等离子刻蚀等工艺,研制了一种基于绝缘硅材料的的微环谐振可调谐滤波器.滤波器微环半径为5 μm左右,波导截面尺寸为(350～500 nm)×220 nm不等.测试结果表明,波导宽度为450 nm时器件性能最为理想,其自由频谱宽度为16.8 nm,1.55 μm波长附近的消光比为22.1 dB.通过对微环滤波器进行热光调制,在21.4 ℃～60 ℃温度范围内实现了4.8 nm波长范围的可调谐滤波特性,热光调谐效率达到0.12 nm/℃.研究了基于单环和双环的多通道上下载滤波器,实验结果表明多通道滤波器的信号传输存在串扰,主要是不同信道之间的串扰,尤其在信号上载时,会在相邻信道产生较大串扰.