Analysis of optical spectra of CdS and CdSe films deposited on a sapphire substrate by laser ablation technique

CdSe and CdS films, deposited on a sapphire substrate by means of pulsed laser ablation technique, have been investigated by means of reflectivity and photoluminescence measurements in order to study the effect of such a transparent substrate on the optical properties of the deposited epilayers. The reflectivity spectra at low temperature have been studied by means of an analytical model which permits one to obtain the energies of the excitonic resonances. The photoluminescence spectra show that our CdSe and CdS films present excitonic emission at low temperature, differently from the same films deposited on quartz. The temperature dependence of the excitonic energy has been analysed by taking into account the contribution of both the thermal expansion and electron-phonon interaction. The exciton linewidth has been analysed according to well known phenomenological models. Received 21 June 2001 and Received in final form 18 November 2001     

Temperature dependence of the optical properties of ZnSe films deposited on quartz substrate

ZnSe thin films were deposited by pulsed laser ablation on quartz substrate. The films were investigated by different characterization techniques, such as X-ray diffraction, Raman microspectroscopy, absorption, reflectivity, and photoluminescence spectroscopy. The XRD analysis showed the formation of cubic phase polycrystalline films. The Raman spectra confirmed the formation of ZnSe by the presence of TO and LO peaks at 202 cm^-1 and 252 cm^-1, respectively. The analysis of absorption and reflectivity measurements permits evaluation of the band gap and excitonic energy at low temperature and the temperature dependence of the energy gap. The photoluminescence measurements indicated the possibility of obtaining intrinsic band-band radiative emission up to room temperature. PACS 52.38.Mf; 78.55.-m; 78.55.Et     

Effects of the indium doping on structural and optical properties of CdSe thin films deposited by laser ablation technique

Thin films of n-type CdSe have been grown on a quartz substrate by laser ablating a target obtained by mixing CdSe and metallic In powders. The effects of different doping concentration of In have been investigated. X-ray diffraction spectra show that at low In density only the CdSe lattice is present in the deposited film, whereas CdIn₂Se₄ and InSe compounds are deposited at higher In concentration. Band gap narrowing and band tails are observed in the absorption spectra when the In concentration increases. Photoluminescence spectra show band-band recombinations from 10 K to room temperature. Received 27 September 2002 Published online 11 April 2003 RID="a" ID="a"e-mail: giuseppe.perna@ba.infn.it     

Effects of aluminum doping and substrate temperature on zinc oxide thin films grown by pulsed laser deposition

Aluminum-doped zinc oxide (AZO) thin films have been deposited on amorphous fused silica substrates by pulsed laser ablation of a Zn:Al metallic targets. We varied the film growth condition such as the substrate temperature and Al concentrations. The films were deposited at substrate temperatures ranging from 20 to 600°C with oxygen partial pressure of 1 torr. The characteristics of the deposited films were examined by analyzing their photoluminescence (PL), X-ray diffraction (XRD), and UV–visible spectra. It is observed that the optical bandgap energy of the deposited films increased with the increase of Al concentration and substrate temperature. Besides, the PL peak energy shifted to blue and the Stokes shift became larger as the Al content increased.     

The comparison between CdS thin films grown on Si(111) substrate and quartz substrate by femtosecond pulsed laser deposition

Two kinds of cadmium sulfate (CdS) thin films have been grown at 600 °C onto Si(111) and quartz substrates using femtosecond pulsed laser deposition (PLD). The influence of substrates on the structural and optical properties of the CdS thin films grown by femtosecond pulsed laser deposition have been studied. The CdS thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), photoluminescence (PL) and Raman spectroscopy. Although CdS thin films deposited both on Si(111) and quartz substrates were polycrystalline and hexagonal as shown by the XRD , SEM and AFM results, the crystalline quality and optical properties were found to be different. The size of the grains for the CdS thin film grown on Si(111) substrate were observed to be larger than that of the CdS thin film grown on quartz substrate, and there is more microcrystalline perpendicularity of c-axis for the film deposited on the quartz substrate than that for the films deposited on the Si substrate. In addition, in the PL spectra, the excitonic peak is more intense and resolved for CdS film deposited on quartz than that for the CdS film deposited on Si(111) substrate. The LO and TO Raman peaks in the CdS films grown on Si(111) substrate and quartz substrate are different, which is due to higher stress and bigger grain size in the CdS film grown on Si(111) substrate, than that of the CdS film grown on the amorphous quartz substrate. All this suggests that the substrates have a significant effect on the structural and optical properties of thin CdS films. PACS 81.15.Fg; 81.05.Ea; 78.20.-e; 78.67.-n; 42.62.-b     

The effect of substrate material on pulsed laser deposition of HgCdTe films

This paper describes some recent results of the HgCdTe thin film grown directly on different substrates (sapphire, GaAs and Si) by pulsed laser deposition (PLD). The influences of the substrate material on the properties of HgCdTe thin films were investigated by X-ray diffraction (XRD), selected area electron diffraction (SAED), atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy (EDS). It was found that the quality of the HgCdTe film has a strong relation to the structure and properties of the substrate. The experiment results indicate that the HgCdTe epitaxial thin films grown directly on the sapphire substrates have a high quality, and the composition of the films is close to that of the target. While the quality of the HgCdTe films deposited on the Si and GaAs substrates are not very good.     

Effects of the ZnSe concentration on the structural and optical properties of ZnSe/PVA nanocomposite thin film

This study investigated the effects of ZnSe nanoparticles (NPs) on the structural and (linear and nonlinear) optical properties of polyvinyl alcohol (PVA) thin film. Three samples of ZnSe NP-doped PVA thin films with different concentrations of ZnSe were produced on a glass substrate. The ZnSe NPs were synthesized by pulsed laser ablation of the ZnSe bulk target immersed in distilled water using a 1064 nm wavelength and a high frequency pulsed Nd:YAG laser. The optical bandgap energies of the films were extracted from their UV-Vis-NIR absorption spectra. The corresponding energy bandgaps of the nanocomposite films declined as the ZnSe NPs doping concentration increased. X-ray diffraction analysis was used to characterize the crystalline phases of the ZnSe/PVA nanocomposite films. The concentration-dependent nonlinear optical absorption and nonlinear refraction behaviors of the films after exposure to 532-nm nanosecond laser pulses were investigated using the Z-scan technique. The nonlinear absorption response of the films was positive when measured using an open aperture scheme, which was attributed to the two-photon absorption mechanism. In addition, the nonlinear refraction indices had a negative value and they increased as the concentration of ZnSe NPs in the films increased.     

Growth dynamics of pulsed laser deposited indium oxide thin films: a substrate dependent study

Indium oxide films are deposited by pulsed laser deposition in the presence of oxygen atmosphere, on different substrates, namely GaAs, Si, quartz, and glass. The structural, morphological, and interface characteristics are studied. Cubic In₂O₃ phase is confirmed by high resolution X-ray diffraction measurements. While the films on Si, glass, and quartz substrates are polycrystalline, the films on GaAs exhibit a preferred orientation along (2 2 2) plane. The structure and crystalline nature of the films are also confirmed by Raman spectroscopy. Furthermore, Raman spectra show the appearance of gallium oxide modes arising due to Ga diffusion from the substrate. The morphology of the films deposited on different substrates is studied by atomic force microscopy and rms roughness values are obtained. A two-dimensional power spectral density analysis has been used to calculate the growth exponent (α). A value of α > 1 (α < 1) for films grown on GaAs/Si (quartz/glass) substrates suggests that the growth on crystalline substrates is governed by the linear diffusion model, whereas the growth on amorphous substrates follows the dynamic scaling behaviour. UV-visible study shows a high optical transmittance of >90% and a band gap value of 3.64 and 3.79 eV for the films deposited on quartz and glass substrates, respectively.     

Critical role of laser wavelength on carbon films grown by PLD of graphite

The structure of thin films deposited by pulsed laser ablation (PLD) is strongly dependent on experimental conditions, like laser wavelength and fluence, substrate temperature and pressure. Depending on these parameters we obtained various kinds of carbon materials varying from dense, mainly tetrahedral amorphous carbon (ta-C), to less compact vertically oriented graphene nano-particles. Thin carbon films were grown by PLD on n-Si 〈100〉 substrates, at temperatures ranging from RT to 800°C, from a rotating graphite target operating in vacuum. The laser ablation of the graphite target was performed by a UV pulsed ArF excimer laser (λ=193 nm) and a pulsed Nd:YAG laser, operating in the near IR (λ=1064 nm). The film structure and texturing, characterised by X-ray diffraction analysis, performed at grazing incidence (GI-XRD), and the film density, evaluated by X-ray reflectivity measurements, are strongly affected both by laser wavelength and fluence and by substrate temperature. Micro-Raman and GI-XRD analysis established the progressive formation of aromatic clusters and cluster condensation into vertically oriented nano-sized graphene structures as a direct function of increasing laser wavelength and deposition temperature. The film density, negatively affected by substrate temperature and laser wavelength and fluence, in turn, results in a porous bulk configuration and a high macroscopic surface roughness as shown by SEM characterisation. These structural property modifications induce a relevant variation also on the emission properties of carbon nano-structures, as evidenced by field emission measurements. This work is dedicated to our friend Giorgio who passed away 20th August.     

Effect of temperature on pulsed laser deposition of HgCdTe films

HgCdTe thin films have been deposited on Si(1 1 1) substrates at different substrate temperatures by pulsed laser deposition (PLD). An Nd:YAG pulsed laser with a wavelength of 1064 nm was used as laser source. The influences of the substrate temperature on the crystalline quality, surface morphology and composition of HgCdTe thin films were characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED), atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy (EDS). The results show that in our experimental conditions, the HgCdTe thin films deposited at 200 °C have the best quality. When the substrate temperature is over 250 °C, the HgCdTe film becomes thermodynamically unstable and the quality of the film is degraded.     

Studies on the influence of lithium incorporation in the photoluminescence of Y2O3:Eu thin films

Nanostructured europium-doped yttrium oxide thin films with lithium as a co-dopant were prepared using pulsed laser ablation technique. X-ray diffraction studies of the films indicated amorphous nature of the as deposited films and a transformation to crystalline phase with increase of annealing temperature. In this transformation, lithium co-doped films showed early crystallization. Lithium substitution resulted not only in enhancement of photoluminescence at 612 nm, resulting from ⁵D₀-⁷F₂ transition within europium, but also found to reduce the required processing temperature for intense photoemission. The deviation observed in the value of lattice constant of films annealed at different temperatures is found to be sensitive to annealing temperature. In the light of this, the dependence of photoluminescence intensity on the magnitude of lattice imperfection is also discussed. The morphology and transmittance of the films are also found to be sensitive to annealing process and lithium doping.     

生长温度对ZnO薄膜晶体质量和发光特性的影响

采用激光脉冲沉积法在Si(100)衬底上生长ZnO薄膜,衬底温度分别为室温,200℃,300℃,400℃和500℃.用X射线衍射仪、拉曼光谱、扫描电子显微镜对薄膜的微结构进行了测量,并测量了室温下薄膜的光致发光特性.结果表明,300℃时.ZnO具有最佳择优取向,随着衬底温度升高.衍射峰半峰全宽减小,薄膜晶粒尺寸增大,400℃时,薄膜具有各向等大的品粒尺寸.同时拉曼谱结果显示,薄膜内部的缺陷随衬底温度变化无明显差别,应力表现为张应力,400℃时应力最小,紫外发光峰在衬底温度为400℃时最强,而黄绿光带最弱.在减少薄膜缺陷,提高择优长向和晶粒尺寸的同时.使晶粒横向尺寸和纵向尺寸尽可能相同,可极大提高薄膜的发光特性.     

Pulsed laser deposition of chromium-doped zinc selenide thin films for mid-infrared applications

We have grown Cr doped ZnSe thin films by pulsed laser deposition on GaAs, sapphire and Si substrates through KrF excimer laser ablation of hot-pressed targets containing appropriate stoichiometric mixtures of Zn, Se, and Cr species and hot-pressed ceramic targets made of ZnSe and CrSe powders in vacuum and in an He background environment (10^-4 Torr). Deposited films were analyzed using X-ray diffraction to determine crystallinity and energy dispersive X-ray fluorescence to confirm Cr incorporation into the films. Photoluminescence measurements on the films show intracenter Cr²⁺ emission in the technologically important 2–2.6 μm spectral range. PACS 78.66.hf; 78.66.-w; 78.55.-m; 78.66.Bz; 78.20.-e     

The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4:Eu,Dy thin films

In this study, SrAl₂O₄:Eu²⁺,Dy³⁺ thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40-700 °C. The structure, morphology and topography of the films were determined by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Photoluminescence (PL) data was collected in air at room temperature using a 325 nm He-Cd laser as an excitation source. The PL spectra of all the films were characterized by green phosphorescent photoluminescence at ∼530 nm. This emission was attributed to 4f⁶5d¹→4f⁷ transition of Eu²⁺. The highest PL intensity was observed from the films deposited at a substrate temperature of 400 °C. The effects of varying substrate temperature on the PL intensity were discussed.     

ZnSe sintered films: Growth and characterization

The II-VI compound semiconductor, ZnSe having wide band gap between 2.58 and 2.82 eV is a promising material for use in photovoltaic devices, blue light emitting diodes and laser diodes. Several methods have been used to prepare ZnSe thin films. We have deposited ZnSe films on ultra-clean glass substrate by sintering technique. The optical, structural and electrical properties of ZnSe thin films have been examined. The optical band gap of these films is studied using reflection spectra in wavelength range 325-600 nm and structure of these films is studied using XRD. The DC conductivity of the films was measured in vacuum by two-probe technique.Sintering is a very simple and viable method compared to other intensive methods. The results of the present investigation will be useful in characterizing the material ZnSe for its applications in photovoltaics.     

Crystalline and photoluminescence characteristics of YVO4:Sm thin films grown by pulsed laser deposition under oxygen pressure

YVO₄:Sm³⁺ films were deposited on Al₂O₃ (0 0 0 1) substrates at various oxygen pressures changing from 13.3 to 46.6 Pa by using the pulsed laser deposition method. The crystallinity and surface morphology of these films were investigated by means of X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The XRD pattern confirmed that YVO₄:Sm³⁺ film has zircon structure and the AFM study revealed that the films consist of homogeneous grains ranging from 100 to 400 nm. The room temperature photoluminescence (PL) spectra showed that the emitted radiation was dominated by a reddish-orange emission peak at 602 nm radiating from the transition of (⁴G_5/2→⁶H_7/2). The crystallinity, surface morphology, and photoluminescence spectra of thin-film phosphors were highly dependent on the deposition conditions, in particular, the substrate temperature. The surface roughness and photoluminescence intensity of these films showed similar behavior as a function of oxygen pressure.     

Structure and mechanical properties of low stress tetrahedral amorphous carbon films prepared by pulsed laser deposition

Tetrahedral amorphous carbon films have been produced by pulsed laser deposition, at a wavelength of 248 nm, ablating highly oriented pyrolytic graphite at room temperature, in a 10^-2 Pa vacuum, at fluences ranging between 0.5 and 35 Jcm^-2. Both (100) Si wafers and wafers covered with a SiC polycrystalline interlayer were used as substrates. Film structure was investigated by Raman spectroscopy at different excitation wavelength from 633 nm to 229 nm and by transmission Electron Energy Loss Spectroscopy. The films, which are hydrogen-free, as shown by Fourier Transform Infrared Spectroscopy, undergo a transition from mainly disordered graphitic to up to 80% tetrahedral amorphous carbon (ta-C) above a threshold laser fluence of 5 J cm^-2. By X-ray reflectivity roughness, density and cross-sectional layering of selected samples were studied. Film hardness as high as 70 GPa was obtained by nanoindentation on films deposited with the SiC interlayer. By scratch test film adhesion and friction coefficients between 0.06 and 0.11 were measured. By profilometry we obtained residual stress values not higher than 2 GPa in as-deposited 80% sp³ ta-C films. Received 25 June 2001     

Fabrication of Mg-doped ZnO thin films by laser ablation of Zn:Mg target

Mg-doped ZnO thin films were fabricated by laser ablation of Zn:Mg targets consisting of Mg metallic strips and Zn disk in oxygen atmosphere with a goal to facilitate convenient control of Mg contents in the films. The characteristics of the deposited films were examined by analyzing their photoluminescence (PL), X-ray diffraction and X-ray photoelectron spectroscopy (XPS) spectra. Mg contents as analyzed by XPS indicate that the target composition is fairly transferred to the deposited films. The wurtzite structure of ZnO was conserved even for the highly doped ZnO films and there was no Mg- or MgO-related XRD peaks. With increase in the Mg content, the bandgap and PL peak energy shifted to blue and the Stokes shift became larger.     

Magneto-optical Faraday and Kerr effect of orthoferrite thin films at high temperatures

Orthoferrites present, as bulk materials, reorientation transitions of their magnetic moment alignment at temperatures depending on the rare-earth (RE) ion. In particular, orthoferrites (REFeO₃) with RE = Sm, Dy, present this transition at T _SRT = 443 K and 36 K, respectively. The spectra of the complex Kerr and Faraday angle have been measured on orthoferrite thin films (RE = Sm, Dy, Y), which were prepared by pulsed laser deposition on amorphous quartz substrates. The obtained spectra exhibit contributions of both surfaces and interfaces. Propagation effects of the polarized light in the magneto-optical medium which is interpreted in terms of a simplified theoretical formalism, is also observed. For selected photon energies, temperature dependent Faraday rotation measurements, , on orthoferrite thin films (RE = Sm, Dy, Y) have been performed. A quite different thermal variation compared to the bulk magnetization has been observed. Curie temperatures are found to be close to the bulk values or slightly larger by 10 K to 20 K as in the case of DyFeO₃ and YFeO₃. For RE = Sm and Dy, increases with increasing temperature contrary to the saturation magnetization, passes through a maximum at about 460 K and vanishes with a T _C of 647±18 K, 695 K for RE = Sm and Dy respectively. Received 28 July 2000     

Characteristics of SrBi2Ta2O9 ferroelectric films on GaAs with a TiO2 buffer layer

Mainly [115]-oriented SrBi₂Ta₂O₉ (SBT) films were prepared on GaAs(100) substrates with TiO₂ buffer layers. Both the SBT films and the TiO₂ buffer layers were deposited by pulsed laser deposition (PLD) using a KrF excimer laser. The depth profile of the constituent elements observed by Auger electron spectrometry (AES) shows no remarkable diffusion at both the interfaces between SBT and TiO₂ and between TiO₂ and the GaAs substrate. The electrical characteristics of the Pt/SBT/TiO₂/GaAs(100) structures show a ferroelectric hysteresis loop with a small remanent polarization (∼0.5 μC/cm²). Received: 1 March 2002 / Accepted: 3 March 2002 / Published online: 10 September 2002 RID="*" ID="*"Corresponding author. Fax: +86-25/3595535, E-mail: xhliu81@hotmail.com RID="**" ID="**"Present address: Data Storage Institute, DSI Building, 5, Engineering Drive 1 (off Kent Ridge Crescent, NUS) 117608 Singapore