Room-Temperature Photonic Crystal Laser in H3 Cavity on InGaAsP/InP Slab

We fabricate and investigate two-dimensional photonic crystal H3 microcavities in an InGaAsP slab. The lasing action at room temperature is observed. The lasering threshold is 7mW under the pulsed pump of 0.75% duty cycle. The Q factor and the lasing mode characteristics are simulated by three-dimensional finite difference time domain method. The simulation result matches well with the experiment.     

Analysis and optimization of an InGaAsP/InP waveguide variable optical attenuator

An InGaAsP/InP waveguide variable optical attenuator (VOA) is proposed in this paper. The device consists of straight input and output waveguides and an S-bend waveguide. An electrode is deposited on a portion of the waveguide to form an active region so that its refractive index can be modified by a current injection, resulting in the variation of the transmitted optical power. The beam propagation method is employed in the numerical simulation and the device structure is optimized using a genetic algorithm. The optimized VOA has a low excess loss (<1 dB) and a large dynamic range of about 40 dB.     

InGaAsP/InP evanescent mode waveguide optical isolators and their application to InGaAsP/InP/Si hybrid evanescent optical isolators

We theoretically investigated InGaAsP/InP evanescent mode waveguide optical isolators and proposed their application to InGaAsP/InP/Si hybrid evanescent optical isolators. InGaAsP/InP evanescent optical isolators are composed of semiconductor optical amplifier (SOA) waveguides having InGaAsP multiple quantum well (MQW) active layer and upper InGaAsP waveguide layer with ferromagnetic layer. Optical isolation is obtained for evanescent optical mode in the InGaAsP waveguide layer. InGaAsP/InP/Si hybrid evanescent optical isolators are theoretically proposed based on the idea of InGaAsP/InP evanescent optical isolators. InGaAsP/InP/Si hybrid evanescent optical isolators are composed of ferromagnetic metal loaded silicon evanescent waveguides with wafer-bonded InGaAsP/InP optical gain material. The optical isolation and propagation loss are discussed with the structure of silicon evanescent waveguides, and optical isolation of 8.0 dB/mm was estimated. The concept of semiconductor evanescent mode optical isolators is feasible with InP based photonic integrated circuits and advanced silicon photonics.     

Single-step growth of InGaAsP/InP laser array on patterned InP substrate

Arrays of five InGaAsP/InP single mode junction-defined buried stripe heterostructure lasers are described. The laser arrays were grown on multi-channeled InP substrate by single-step liquid phase epitaxy. The buried double heterostructure and the lateral current confining structure were formed in the same growth process. InGaAsP layer growth is dominated by the preferred orientation, with (1 0 0) growth favored over other directions. As a result of low-temperature single-step growth, the device yield is high. These laser arrays are characterized by output power close to 0.6 W, high quantum efficiency, symmetrical far-field patterns and excellent linearity of the light–current curve. Stable single transverse mode operation obtained up to 600 mW emitted power.     

场助InGaAsP/InP异质结半导体光电阴极的研究

本文通过对InGaAsP/InP场助异质结半导体光电阴极的材料生长、场助肖特基结的制备及阴极激活等工艺的系统研究,研制出具有较高光谱响应的半导体光电阴极,生长出优于文献报道的晶格失配率标准的材料,得到相当80年代国际水平理想因子值的场助肖特基结,用实验数据介绍提高量子效率数量级的方法和条件.研究结果表明场助异质半导体光电阴极是在红外波段很有潜力的光电发射体.     

Integrated MQW intermixed InGaAsP/InP waveguide photodiodes

A multi-wavelength Quantum well (QW) waveguide photodiode (PD) have been designed for Coarse Wavelength Division Multiplexing (CWDM) systems in which spatial tailoring of the bandgap with post growth F implanted QW intermixing of InGaAsP/InP multi QWs for the integration have been considered. Two separate structures with different composition but same well widths are necessary to detect all CWDM wavelengths. For In_0.5995Ga_0.4005As_0.8521P_0.1479 well there is a 12 channel coverage from 1,270 to 1,490 nm and for the In_0.5540Ga_0.4460As_0.9489P_0.0511 well the 14 channel spans from 1,350 to 1,610 nm. A carrier tunneling time of 20 ps along with the transit time limited bandwidth of 86 GHz gives a 3 dB bandwidth of 41 GHz by optimizing the i-MQW thickness and dopant concentration of the different layers of the waveguide. A maximum efficiency of 22% with insertion loss of 0.4–23 dB has been obtained.     

Acoustoelectronic interaction in InGaAsP/InP laser heterostructures

The dynamics of change in the spectral characteristics of the emission from a laser heterostructure due to an alternating strain induced by a surface acoustic wave is investigated. The spectral distributions of the laser radiation intensities are analyzed with the aim of elucidating the mechanisms responsible for the interactions occurring in the laser heterostructure. A model is proposed for describing the experimental data, and their theoretical analysis is performed. It is demonstrated that the acoustoelectronic interaction is dominant under the action of surface waves. The deviation of the observed frequency modulation of radiation is determined from a comparison of the theoretical calculations with experimental data.     

Acousto-electron interaction in InGaAsP/InP laser heterostructures

The frequency modulation of the heterolaser radiation under the ultrasonic strain has been found out. The dynamic and static analysis of the spectral parameters change caused by the alternating strain has been fulfilled. A model is proposed for describing the experimental data, and their theoretical analysis is performed. It is demonstrated that the acousto-electron interaction is dominant under the action of surface waves in InGaAsP/InP laser heterostructures.     

双异质结双漂移区InP/InGaAsP/InP微波雪崩二极管的设想

本文提出了一种双异质结双漂移区InP/InGaAsP/InP微波雪崩二极管的设想,分析表明:该器件的电压调制度可达100%,对应的直流到射频的转换率为64%,同时给出了器件的小信号理论分析。 关键词：     

Photovoltaic spectroscopy of InGaAsP/InP multiple quantum wells

Photovoltaic Spectroscopy is used to study lattice matched Au/InGaAsP/InP multiple quantum wells at 4.2 < T < 300 K. Four quantum transitions are clearly identified in the spectra and their temperature shift mapped. The Au/InGaAsP Schottky barrier is found to be nearly temperature independent at φ_B ≃ 0.68 eV, and the binding energy of the 11H associated exciton estimated at E_b ≃ 11 meV. The 11H exciton displays a small electric field shift, to the red at low T, changing over to a blue shift at higher temperatures.     

Modal properties of all-active InGaAsP/InP microring lasers

An experimental investigation of the multimode dynamics of 1.55 μm-InGaAsP/InP microring lasers is demonstrated. Different operation regimes are observed, bidirectional multimode, unidirectional single mode, bidirectional single mode and mode-hopping. The extent of each of the above operation regimes is examined with respect to the ring current level, bus waveguide reflectivity and ring radius. The back-reflections generated from the bus waveguide facets are indirectly controlled via the bus waveguide current. In order to clarify the physical mechanisms beyond experimental results, a multimode model based on the rate equation approximation is utilized. The experimental results are in good agreement to those predicted by the multimode model.     

Miniature InGaAsP/InP phase modulator for integrated opto-electronics

Abstract

Miniature, etching ridge InGaAsP/InP Phase Modulator with highly efficient phase shifting efficiency of 60°/V.mm and 43°/V.mm for TE and TM modes, respectively, and 3 dB bandwidth of 650 MHz at 1.52 μm are reported. It is well suited for integrated opto-electronics. Some functions depending on bandwidth of the devices are discussed.     

Opto-electronic integrated circuits using the InGaAsP/InP system

Recent developments in opto-electronic integrated circuits (OEICs) using the InGaAsP/InP system which is monolithically integrated with opto-electronic and electronic devices are discussed. The technological problems for the development of the OEICs are explained by reviewing recent developments in OEICs.     

Miniature InGaAsP/InP phase modulator for integrated opto-electronics

Miniature, etching ridge InGaAsP/InP Phase Modulator with highly efficient phase shifting efficiency of 60°/V.mm and 43°/V.mm for TE and TM modes, respectively, and 3 dB bandwidth of 650 MHz at 1.52 μm are reported. It is well suited for integrated opto-electronics. Some functions depending on bandwidth of the devices are discussed.     

Carrier dynamics in strain-induced InGaAsP/InP quantum dots

Carrier dynamics of strain-induced InGaAsP/InP quantum dots (QDs) is investigated. In this structure, self-assembled InAs islands on the surface act as stressors and create a lateral confinement potential in the near surface InGaAsP/InP quantum well. Photoluminescence (PL) measurements reveal that decreasing the distance from the QD to the surface significantly diminishes the QD–PL intensity, presumably due to surface states of the InAs islands. Moreover, time-resolved measurements show a faster decay of the QD–PL with decreasing distance. To analyze the carrier dynamics, rate equation model is applied and surface state-related transitions are taken into account. The model is found to agree with measurements, and thus provides a possible explanation for the observed temporal behavior of the carriers.     

高效率PBRS InGaAsP/InP LED的研究

用于单模光纤系统的平面隐埋脊型(PBRS)InGaAs P/IuP DH LED已研制成功.本文对材料和器件设计作了简要描述.异质结晶体系采用二次液相外延生长,器件具有斜胶面受激抑制结构和平面隐埋脊型有源区,用激光焊接金属化封装技术使器件与单模光纤耦合对接.波器件在单模光纤中的入纤功率达35μW,是国内已见报道中最高的结果,带宽195MHz.在四次群传输实验中,无中继传输距由大于20公里.     

场助InP／InGaAsP／InP半导体光电阴极异质结能带的计算

采用双曲型的渐变函数,同时考虑加偏压时引起的阴极表面空间电荷区的变化,对场助InP/TnGaAsP/InP半导体光电阴极异质结的能带结构进行了详细的分析和计算,得到了在不同材料参数时,异质结能带结构的分布曲线.计算结果指出了达到理想的异质结传输效率时,发射层的厚度和掺杂浓度、吸收层的掺杂浓度、异质结界面处渐变区宽度以及场助偏压应满足的条件.它有助于场助半导体光电阴极的结构设计和材料参数的选择.     

InGaAsP/InP边发光管特性的研究

用液相外延技术生长的外延片,制成了SiO2条形限制的InGaAsP/InP边发光管,100mA下光功率1mW,最高值1.3mW,发射波1.31μm,半宽860A。研究了外延材料特性(如p-n结位置,有源层厚度和浓度)对器件光功率,光谱特性,和Ⅰ-Ⅴ特性的影响。有源层厚度(d)对光功率和光谱半宽有重要影响,p-n结不偏位的器件,光谱特性为单一的长波长发射蜂,具有正常的Ⅰ-Ⅴ特性。p-n偏离有源层的器件,光谱特性除长波长发射峰外,尚有9700A的InP发射峰,其Ⅰ-Ⅴ特性具有异常特性,导通电压>0.9V。     

可集成的高效率InGaAsP相位调制器

GaAs-AlGaAs和InGaAsP-InP体系光电波导调制器已日益引起人们的兴趣。预计它们可以用于高速光通信,相干光通信和激光陀螺。 本文报道一种用耗尽边带传输加反向偏压p-n结结构的高效InGaAsP/InP相位调制器。该调制器用液相外延、湿法腐蚀和常规工艺制备。这种波导禁带波长1.3μm的调制器在1.52μm波长观察到很大的相位移效率,对TE模和TM模来说分别为60°/V·mm和43°/V·mm。     

1.3μmInGaAsP/InP DCC结构半导体激光器

用普通的LPE技术,严格控制两个有源区组分的匹配、各层掺杂浓度及生长条件,获得了1.3μm双载流子限制DCC结构半导体激光器(T0=150K)。此结构中第二有源区形成的势阱对热载流子具有二次限制作用,增加了第一个有源区泄漏和俄歇过程产生的过热载流子在第二有源区内辐射复合参与激射的机会;降低了这些热载流子进入限制层产生损耗的几率,提高了T0值,说明了DCC结构激光器阈值以下特征EL光谱半宽度与注入电流密度的关系并讨论了两个有源区组分匹配及薄夹层厚度对特征温度T0和阈值电流的影响。