Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

Room-temperature operation of cw GaN based multi-quantum-well laser diodes （LDs） is demonstrated. The LD structure is grown on a sapphire （0001） substrate by metalorganic chemical vapour deposition. A 2.5μm × 800μm ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110mA and 10.5V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern （FFP） are 12° and 32°, respectively.     

Enhanced Luminescence of InGaN-Based 395 nm Flip-Chip Near-Ultraviolet Light-Emitting Diodes with Al as N-Electrode

High-reflectivity Al-based n-electrode is used to enhance the luminescence properties of InGaN-based 395 nm flip-chip near-ultraviolet(UV) light-emitting diodes. The Al-only metal layer could form the Ohmic contact on the plasma etched n-GaN by means of chemical pre-treatment, with the lowest specific contact resistance of2.211×10~(-5)Ω·cm~2. The Al n-electrodes enhance light output power of the 395 nm flip-chip near-UV light-emitting diodes by more than 33% compared with the Ti/Al n-electrodes. Meanwhile, the electrical characteristics of these chips with two types of n-electrodes do not show any significant discrepancy. The near-field light distribution measurement of packaged chips confirms that the enhanced luminescence is ascribed to the high reflectivity of the Al electrodes in the UV region. After the accelerated aging test for over 1000 h, the luminous degradation of the packaged chips with Al n-electrodes is less than 3%, which proves the reliability of these chips with the Al-based electrodes. Our approach shows a simplified design and fabrication of high-reflectivity n-electrode for flip-chip near-UV light emitting diodes.     

Development of a Two-Dimensional Bar-Code Detection System Using Multi Laser Diodes with Time-Sharing Light Emission Operation

A new high-speed two-dimensional bar-code detection system using multi laser diodes with time-sharing light emission operation has been developed. A bias current allowing the laser diode to improve the light output rise time was optimized to slightly below the threshold of the diode, so that channel cross-talk among three-line bar-code signals caused by the bias light can be kept small and a high-speed pulse modulation operation can be achieved. The prototype system for a three-line bar code with spatially overlapping laser-diode heads has achieved an effective scanning speed two and nine tenths times that of conventional scanners. It is estimated that the number of time-sharing light emission laser diodes can be increased to at least four when the current photodetection amplifier with a bandwidth of 6.4 MHz is used. This number can be improved to six by using photodetection amplifiers with double the bandwidth of the present ones.     

Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes

We report the enhancement of the light extraction of InGaN-based green light emitting diodes （LEDs） via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire substrate with an in situ etching. The width of nanocraters is about 0.5 μm and the depth is around 0.1 μm. It is demonstrated that the LEDs with interface texture exhibit about a 27% improvement in luminance intensity, compared with standard LEDs. High power InGaN-based green LEDs are obtained by using the interface nanotexture. An optical ray-tracing simulation is performed to investigate the effect of interface nanotexture on light extraction.     

Continuous-Wave Operation of a 460-GHz Second Harmonic Gyrotron Oscillator

We report the regulated continuous-wave (CW) operation of a second harmonic gyrotron oscillator at output power levels of over 8 W (12.4 kV and 135 mA beam voltage and current) in the TE(0,6,1) mode near 460 GHz. The gyrotron also operates in the second harmonic TE(2,6,1) mode at 456 GHz and in the TE(2,3,1) fundamental mode at 233 GHz. CW operation was demonstrated for a one-hour period in the TE(0,6,1) mode with better than 1% power stability, where the power was regulated using feedback control. Nonlinear simulations of the gyrotron operation agree with the experimentally measured output power and radio-frequency (RF) efficiency when cavity ohmic losses are included in the analysis. The output radiation pattern was measured using a pyroelectric camera and is highly Gaussian, with an ellipticity of 4%. The 460-GHz gyrotron will serve as a millimeter-wave source for sensitivity-enhanced nuclear magnetic resonance (dynamic nuclear polarization) experiments at a magnetic field of 16.4 T.     

1300 nm超辐射发光二极管寿命测试

作为光纤陀螺用光源的超辐射发光二极管(SLD)随着工作时间的延续,其性能会发生退化.采用加速老化的实验方法来估算InGaAsP SLD管芯的工作寿命.分别在环境温度373 K和358 K下对5只SLD管芯进行加速老化,并通过对P-t曲线拟合来推算和估计管芯的老化速率和激活能.计算出了器件的激活能平均值约为0.82 eV,SLD管芯在室温下的工作寿命超过106h,可以满足光纤陀螺用光源的寿命要求.对影响SLD管芯可靠性的因素以及管芯的退化机理进行了分析,为研制高可靠性的超辐射发光二极管提供了理论基础.     

Efficient White Light Emission Using a Single Copolymer with Red and Green Chromophores on a Conjugated Polyfluorene Backbone Hybridized with InGaN-Based Light-Emitting Diodes

We report an efficient white-light emission based on a single copolymer/InGaN hybrid light-emitting diode. The single copolymer consists of a conjugated polyfluorene backbone by incorporating 2,1,3-benzothiadiazole （BT） and 4,7-bis（2-thienyl）-2,1,3-benzothiadiazole （DBT） as green and red light-emitting units, respectively. For the single copolymer/InGaN hybrid device, the Commission Internationale de 1＇Eclairage （CIE） coordinates, color temperature Tc and color rendering index Ra at 20mA are （0.323,0.329）, 5960K and 86, respectively. In comparison with the performance of red eopolymer PFO-DBT15 （DOF：DBT=85：15 with DOF being 9＇9- dioctylfluorene） and green copolymer PFO-BT35 （DOF：BT=-65：35） blend/InGaN hybrid white devices, it is concluded that the chemically doped copolymer hybridized device shows a higher emission intensity and spectral stability at a high driving current than the polymer blend.     

Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes

The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes(LEDs) is investigated.The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current,which results from the Mg-dopant-related polarization screening.The LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region.Light outputs follow the power law L ∝ I~m,with smaller parameter m in the LEDs with less Mg back-diffusion,indicating a lower density of trap states.The trap-assisted tunneling current is also suppressed by reducing Mgdefect-related nonradiative centers in the active region.Furthermore,the forward current-voltage characteristics are improved.     

A Continuous-Wave Diode-Side-Pumped Tm:YAG Laser with Output 51W

A compact diode-side-pumped Tm：YAG laser is presented, which can output 51 W of cw power at 2.02 μm. The Tm：YAG rod is side pumped by nine diode arrays with the central wavelength of 783nm and the with bandwidth of about 2.5 nm at 25^o C. To decrease the thermal effect on the both ends and dissipate the heat effectively, one composite Tm：YAG rod with the undoped YAG end caps and the screw threads on the side surface of the rod is used as the laser crystal. The maximum optical-to-optical conversion efficiency of the 2.02-μm laser output is 14.2%, with a slope effciency of 26.8%     

High-Quality Continuous-Wave Imaging with a 2.53THz Optical Pumped Terahertz Laser and a Pyroelectric Detector

A cw terahertz （THz） transmission imaging system is demonstrated and a high-quality THz image can be obtained using a pyroelectric detector. The factors that affect the imaging quality, such as the THz wavelength, spot size on the sample surface, step length of the motor, and frequency of the chopper, are theoretically and experimentally investigated. The experimental results show that the maximum resolution of the THz image can reach 0.4mm with the THz wavelength of 118.8μm, the spot size of 1.8mm and the step length of 0.25mm.     

Characteristics of Gain-Guided Laser Diodes with Cylindrical-Mirror Cavity

We have developed highly reliable etched-mirror laser diodes using a dry etching method. The lasers without facet-coating have been operating stably over 2500 h under automatic-power control (APC) at a power of 3 mW/facet at 50°C. The gain-guided laser diodes with a cylindrical-mirror cavity (CMC) have coaxial mirrors and a fan-shaped stripe structure. By decreasing the curvature radius of the inner facet or increasing the stripe width of the inner facet, the beam waist parallel to the junction plane can be moved outside of the laser diode, while the beam waist perpendicular to the junction plane stops at the mirror facet. A particular CMC laser has a low astigmatism of 4.1 μm and a low relative intensity of noise (RIN) less than –134 dB/Hz at 4 mW under 0–1% optical feedback without high frequency current superposition.     

光纤型宽带可调连续波差频产生中红外激光器

报道一种新型光纤化宽带可调连续波中红外激光器系统,该激光系统采用准相位匹配(QPM)的差频产生(DFG)技术,非线性晶体为多周期的周期性极化掺镁铌酸锂晶体(PPMgLN),掺镱光纤激光器(YDFL)用作抽运光源,可调激光器经掺铒光纤放大器(EDFA)功率提升后作为信号光源。利用建立的准相位匹配-差频产生系统,获得了连续波中红外差频光输出;实验发现,温度导致相位失谐的半峰全宽(FWHM)为4.5℃;通过优化选择晶体周期,并结合调节信号光波长和控制温度,该准相位匹配-差频产生系统可在3.1~3.6μm内连续调谐。     

Doping Defects in Two-Dimensional Holographic Photonic Crystals Using a Continuous-Wave Visible Laser

It is demonstrated that defects of any shape or size can be doped in holographic photonic crystals using a cw visible laser and spherical/cylindrical lens. Defects with different sizes at any depth in the material can be obtained by controlling the position of the foca/point of the lens and exposure value. We facilitate the implementation of sub-wavelength arbitrary point or line defects in large-size 2D holographic photonic crystals.     

Optimization and Characterization of InGaAsN/GaAs Quantum-well Ridge Laser Diodes for High Frequency Operation

Optimization and characterization of multiple InGaAsN/GaAs quantum-well laser diodes for high frequency operation are reported. From the modelling of the dilute nitride quantum well, we investigate how to design the structure to achieve a high frequency operation. The gain characteristics are optimized by incorporating the minimum amount of nitrogen in the well to obtain the emission at 1.3 μm with a low transparency density and a high differential gain. We show that the number of wells must be adjusted to three to benefit of the best compromise between the threshold current and the differential gain. The effects of the cavity losses on the dynamic characteristics are evaluated and demonstrate the interest for high cavity losses to reach high relaxation frequency despite a lower characteristic temperature. An optimized structure has been realized and exhibits an emission at 1.34 μm with a transparency current density of 642 A/cm² and a characteristic temperature T₀ ~ 80 K. Dynamic properties for ridge devices are evaluated from relative intensity noise measurements and small-signal modulation. A relaxation frequency as high as 7.4 GHz and a 9.7 GHz small-signal bandwidth are reported. We demonstrate transmission up to 10 Gb/s at 25°C without penalty and bit error floor.     

大功率半导体激光器的可靠性研究

对InGaAs/AlGaAs和InGaAsP/GaAs有源区含铝的915nm和无铝的808nm腔面镀膜及未镀膜的大功率半导体激光器进行了老化实验。在老化前通过综合参数测试仪测试两种激光器的斜率效率、阈值电流，发现有腔面膜的激光器比无腔面膜的激光器的阈值电流降低25％以上。在1.2倍阈值电流下，恒流老化40h左右，老化后再分别测试它们的阈值电流、功率参数，我们发现在老化后未镀膜的激光器的阈值电流和镀有腔面膜的激光器相比增加25mA以上，输出功率也比镀过腔面膜的减小到了原来的1／2，可见腔面保护对于延长激光器的寿命是很重要的。     

LD光束在自聚焦透镜中的传输特性

基于分析激光二极管光束传输特性，运用厄米-高斯光束描述其远场分布．将自聚焦透镜用于激光二极管的光束整形，用2阶传输矩阵描述自聚焦透镜．运用Collins衍射积分公式，分析了LD光束在自聚焦透镜中传输场分布的解析表达式．在此基础上，数值计算了一种LD光束在自聚焦透镜中场分布．该模型结构简单，可用于分析光束传输特性和设计光束整形系统．     

Laser Ablation of Titanium in Cryogenic and Room-Temperature Liquids

The results of processing of an OT4-0 titanium plate surface in media of C₂H₅OH + H₂O and liquid argon by radiation of a pulse-periodic Nd:YAG laser with subnanosecond pulses are presented. A change in current-carrying properties of structures synthesized in C₂H₅OH + H₂O is studied. The effect of subsequent influence of HNO₃ + HF acid solution on laser-induced structures is considered.     

1319nm连续激光辐照皮肤组织的光热效应实验研究

实验测定了离体人皮肤组织在1 319 nm连续Nd:YAG激光辐照下径向和轴向不同位置的温度分布,研究了激光辐照功率密度和作用时间对皮肤组织温升分布的影响.结果表明,皮肤组织中的温度分布与探测位置、激光辐照功率密度以及作用时间密切相关;激光输出功率密度15.80 W/cm2时安全辐照时间阈值为120 s,功率密度48.92 W/cm2时安全辐照时间阈值为6 s.     

大失谐连续输运激光情形下双磁光阱中冷原子的输运

在我们建立的铯原子双磁光阱实验装置上,采用连续激光将气室磁光阱中冷却并俘获的冷原子输运到超高真空磁光阱.在前期利用近共振弱光研究原子输运的工作基础上,我们将输运激光的负失谐量扩展到约2.0 GHz,并增大了输运光功率,对冷原子的输运作了实验研究.结果表明:在大负失谐情形下,较强的输运光使冷原子输运更为有效,归因于输运光束对原子的偶极力造成对冷原子的导引作用.     

Supersaturating Silicon with Titanium by Continuous-Wave Laser Irradiation of Sputtered Titanium Film on Silicon

A method of magnetron sputtering followed by continuous-wave(cw) laser irradiation is developed to prepare crystalline silicon supersaturated with titanium.The irradiation of single crystalline Si samples sputtered with a thin layer of Ti is carried out under the 1064 nm cw laser in a specially designed home-made facility.The thickness of the Si layer,within which the concentration of Ti surpasses the Mott limit,reaches 365 nm and the maximum concentration of Ti reaches 1.83 × 10~(21) cm~(-3).The crystalline structure of the Si samples is kept unchanged after cw laser irradiation.These results show that the current method can be an efficient way to obtain an intermediate band semiconductor material for solar cells.