CdSe在高压下的电学性质及相变

 利用在金刚石压砧上集成的微电路,原位测量了CdSe多晶粉末在温度为300~450 K、压力达到23 GPa时电阻率随温度和压力的变化关系。实验结果表明：在加压过程中,电阻率在2.6 GPa压力时出现的异常改变,对应着CdSe从纤锌矿向岩盐矿结构的转变,而在6.0、9.8、17.0 GPa等压力处出现的电阻率异常,则是由CdSe中的电子结构的变化所引起的;在卸压过程中,只在约14.0和3.0 GPa压力下观察到了两个电阻率异常点。通过对电阻率随压力变化曲线的模拟,得出了CdSe高压相的带隙随压力的变化关系,据此预测CdSe金属化的压力应在70~100 GPa之间。变温实验结果表明,在实验的温度和压力范围内,CdSe的电阻率均随温度的增加而升高。     

硫化铁的两个电导率相关的相变

 由于X射线对高级相变和电子相变不够敏感,致使很多物质的相变和新的性质被忽略。对物质电阻的变化进行分析可以很好地弥补这一缺陷。通过金刚石对顶砧上原位电阻测量方法,在0~88.7 GPa的压强范围内,在300~443 K的温度条件下,基于范德堡法电阻测量原理,对硫化铁的电导率进行了测量。通过对电导率的分析发现,在零压、温度为408 K的条件下,硫化铁转变成了NiAs结构相。在34.7 GPa和61.3 GPa压强处发现了两个新的突变点,为了印证这两处相变的可靠性,分别测量了在不同压强下样品电导率随温度的变化情况。     

In-Situ Conductivity Measurement of BaF2 under High Pressure and High Temperature

We perform the in-situ conductivity measurement on BaF2 at high pressure using a microcircuit fabricated on a diamond anvil cell. The results show that BaF2 initially exhibits the electrical property of an insulator at pressure below 25 GPa, it transforms to a wide energy gap semiconductor at pressure from 25 to 30 GPa, and the conductivity increases gradually with increasing pressure from 30 GPa. However, the metallization predicted by theoretical calculation at 30-33 GPa cannot be observed. In addition, we measure the temperature dependence of the conductivity at several pressures and obtain the relationship between the energy gap and pressure. Based on the experimental data, it is predicted that BaF2 would transform to a metal at about 87 GPa and ambient temperature. The conductivity of BaF2 reaches the order of 10^-3Ω^-1 cm^-1 at 37 GPa and 2400 K, the superionic conduction is not observed during the experiments, indicating the application of pressure elevates greatly the transition temperature of the superionic conduction.     

Zn2SnO4纳米线高压下的相变研究

 利用金刚石对顶压砧（DAC）对具有反尖晶石结构的透明导体氧化物Zn₂SnO₄（ZTO）纳米线进行了原位高压同步辐射角散X射线衍射（ADXRD）研究。结果发现：在压力为12.9 GPa附近,晶体的对称性降低,并发生晶体结构相变,产生中间过渡相;当压力为32.7 GPa时,发生高压相变,形成高压相。在样品加压前后,纳米线的形貌发生了很大的变化。通过Birch-Murnaghan方程,拟合得到B′₀=4时的体弹模量B₀ =(168.6±9.7) GPa。     

The Phase Transition of Eu2O3 under High Pressures

Pressure-induced phase transition of cubic Eu2 03 is studied by angle-dispersive x-ray diffraction （ADXD） up to 42.3 GPa at room temperature. A structural transformation from a cubic phase to a hexagonal phase is observed, which starts at 5.0 GPa and finishes at about 13.1 GPa. The phase transition leads to a volume collapse of 9.0% at 8.6 GPa. The hexagonal phase of Eu2 03 maintains stable up to the highest experiment pressure. After re/ease of pressure, the high-pressure phase transforms to a monoclinic phase. The pressure-volume data are fitted with the Birch-Murnaghan equation of state. The bulk moduli obtained upon compression from the fitting are 145（2） GPa and 151（6） OPa for the cubic and hexagonal phases, respectively, when their first pressure derivatives are fixed at 4.     

高压下钒的结构相变研究

运用密度泛函理论研究了钒(Vanadium)在高压下的结构相变。 通过对体心立方(bcc)结构的钒在不同压强下剪切弹性系数C44的计算, 发现当压强约95 GPa时 C44＜0, 说明体心立方结构的钒在此条件下是不稳定的。 进一步计算分析得到钒在高压下发生了从体心立方到菱面体 (Rhombohedral)的结构相变, 相变压强约70 GPa, 这一结果与最近的实验结果符合。 还首次发现当压强约380 GPa时, 将会发生菱面体到体心立方的结构相变, 这有待实验的验证。We have studied the structure phase transition of Vanadium under high pressures by density function theory. A mechanical instability in the shear elastic constant (C44) has been found for body centred cubic(bcc) Vanadium at about 95 GPa, which indicates the existence of the structural transition. By calculation and analysis, we found that there was a bcc rhombohedral structure transition at the 70 GPa, which is consistent with the experiment data. Our calculations also firstly gave that there was a rhombohedral bcc structure transition at about 380 GPa, which needs to be verified by the experiment.     

Experimental Observation of Phase Transition in Sb203 under High Pressure

The in situ high-pressure behavior of the semiconductor antimony trioxide(Sb_2O_s) is investigated by the Raman spectroscopy techniques and angle-dispersive synchrotron x-ray powder diffraction in a diamond anvil cell up to31.5 and 30.7 GPa,respectively.New peaks observed in the external lattice mode range in the Raman spectra at 13.5 GPa suggest that the structural phase transition occurs.The group mode(140 cm~(-1)) in Sb_2O_3 exhibits anomalous pressure dependence;that is,the frequency decreases gradually with the increasing pressure.High pressure synchrotron x-ray diffraction measurements at room temperature reveal that the transition from the orthorhombic structure to high-pressure new phase occurs at about 14.2 GPa,corresponding to the softening of the group optic mode(140 cm~(-1)).     

石膏的高压原位Raman光谱和相变研究

 利用金刚石对顶砧（DAC）高压装置产生高压,在0~35 GPa压力范围,对石膏（Gypsum,CaSO₄·2H₂O）晶体进行了高压原位Raman光谱研究。根据高压Raman光谱的实验数据,给出了石膏晶体Raman振动频率与压力的依赖关系;在4.5 GPa附近,在对称性伸缩振动范围,发现新的Raman峰1 012  cm^-1出现,这个峰的强度随压力升高逐渐增强,据此断定在4.5 GPa 附近,石膏晶体发生了压力导致的结构相变。     

高压下TiN等结构相变的第一性原理研究

 利用基于密度泛函理论的赝势平面波方法和线性响应理论,研究了TiN的物态方程、电子能带结构和声子色散曲线随压强的变化关系。结果表明：TiN 的电子能带结构并未随着压强的增加而出现反常,没有出现电子的拓扑结构相变;零压下出现软化的声子模式并没有随着压强的增加而继续软化。因此可以认为在0～12 GPa 压强范围内,TiN 发生等结构相变的原因不是由于电子的拓扑形貌发生变化和声子软化引起的。     

Raman Scattering Spectroscopy of Phase Transition in n-Pentadecane under High Temperature and High Pressure

The Raman spectroscopy of n-pentadecane is investigated in a moissanite anvil cell at normal temperatures and a diamond anvil cell under pressure to about 3000MPa and at temperature from 298 to 573K. Result indicates that at room temperature the vibration modes, assigned to the symmetric and asymmetric stretching of CH3 and CH2 stretching, shift to higher frequency and display a pressure dependent quasi-linear curve. A liquid-solid phase transition appears at a pressure of 150 MPa. The high temperature solidus line of n-pentadecane follows a quadratic function of P = 0.02369T^2 - 9.117T ＋ 725.58, in agreement with previous conclusion derived from studies of other hydrocarbons. Upon phase transition, fitting the experimental data obtained in a temperature range of 283 553 K to the Clausius-Clapeyron equation allows one to define the thermodynamic parameters of n-pentadecane of dP/dT = 0.04738T - 9.117.     

Effects of Al doping for Li[Li0.09Mn0.65*0.91Ni0.35*0.91]O2 cathode material

Li-rich Mn-based Li[Li_0.09Mn_{0.65*(0.91???x)} Ni_{0.35*(0.91???x)} Al _x ]O₂ cathode materials have been prepared by traditional solid-state reaction. The lattice parameters a, c, and V have decreased, but c/a increased with the increase of Al doping. All the samples show analogy morphology of a quasi-spherical shape. Li[Li_0.09Mn_0.591Ni_0.319]O₂ sample shows a higher initial discharge capacity of 239.4 mAh?g^?1 at 20 mA?g^?1, while Li[Li_0.09Mn_0.582Ni_0.314Al_0.015]O₂ sample presents a higher discharge capacity of 170.1 mAh?g^?1 and ratio of 72.0 % with 200 vs. 20 mA?g^?1. The solid electrolyte interface resistance (R _SEI) and charge transfer process resistance (R _ct ) values are relatively smaller for Al-doped samples than those of non-doped samples. Almost no reduction is observed after 24-time cycles in different discharge rates for the samples prepared.     

高温高压下辉石岩的电导率研究

 利用阻抗谱在1.0~2.0 GPa、温度450~792 K条件下、10⁵~12 Hz的频率范围内,对辉石岩的电导率进行了研究,并且分析了测试频率对电导的影响,结果表明,电导率对频率具有一定的依赖性;在复平面上出现了代表颗粒内部的阻抗弧。辉石岩的激化焓为0.661~0.673 eV,样品中较高的铁含量可能是造成本实验电导率较高的主要原因。     

Rapid synthesis of LiCr0.15Mn1.85O4 by glycine–nitrate method

LiCr_0.15Mn_1.85O₄ spinel has been successfully synthesized by glycine–nitrate method (GNM). The presence of pure spinel phase was confirmed by long term XRPD measurements and the Rietveld structural refinement. Lattice parameter was estimated to be 8.2338 Å. Average particle size of prepared powder material is below 500 nm. The BET surface area is 9.6 m² g^− 1. As a cathode material for lithium batteries LiCr_0.15Mn_1.85O₄ shows initial discharge capacity of 110 mA h g^− 1 and capacity retention of 83% after 50 cycles.     

Structures and Phase Transition of GaAs under Pressure

A first-principles plane wave method with the ultrasoft pseudopotential scheme in the frame of the density functional theory （DFT） is performed to calculate the lattice parameters a and c, the bulk modulus B0 and its pressure derivative B0 of the zinc-blende GaAs （ZB-GaAs）, rocksalt GaAs （RS-GaAs）, CsCl-GaAs, NiAs- GaAs and wurtzite GaAs （WZ-GaAs）. Our results are consistent with the available experimental data and other theoretical results. We also calculate the phase transition pressures among these different phases. The results are satisfactory.     

固结压强对纳米PbF2的相变和离子电导率的影响

 用惰性气体蒸发-真空原位固结法制备了直径为10 mm、厚度为1～2 mm的具有清洁界面的纳米PbF₂块体材料,原位固结压强为0.3～1.8 GPa。采用X射线衍射和复阻抗谱方法,研究了固结压强对纳米PbF₂物相组成、晶粒度和离子电导率的影响。结果表明,相同压强下,纳米β-PbF₂比粗晶β-PbF₂更易于向α-PbF₂转化;随着压强增大,样品中低电导率的α-PbF₂相不断增加,导致离子电导率下降。压强引起的连续相变使晶粒度缓慢长大。由于晶粒细小,纳米α-PbF₂的离子电导率比粗晶α-PbF₂提高约一个数量级,与粗晶β-PbF₂相当。     

冷轧低碳钢高压相变组织的透射电镜分析

 对冷轧低碳钢在高压下进行再结晶,用透射电子显微镜（TEM）分析高压相变组织,发现压力可以使再结晶晶粒细化;压力升高,具有体心立方结构的普通低碳钢可形成ε-马氏体,并根据电子衍射花样的计算确定ε-马氏体的晶格参数。     

高压下铌铁矿相TiO2直接相变的第一性原理研究

利用第一性原理的GGA+U方法对TiO2的金红石相、铌铁矿相、萤石相、黄铁矿相和四方P42/nmc相进行了计算。首先,优化了这几个相的晶体结构及相关参数,分析了焓曲线图,发现了在50.1GPa压强下,铌铁矿相突然直接转变成一个新的四方P42/nmc相。其次,通过GGA+U和HSE06两种方法计算讨论了四方P42/nmc相的能带结构,并拟合分析了三阶B-M状态方程和XRD图谱。最后,通过分析相变压强范围、体弹模量和XRD图谱,本文认为四方P42/nmc相与立方萤石相是共存的,能很好符合2004年立方TiO2的实验结果。     

高压下铌铁矿相TiO2直接相变的第一性原理研究

利用第一性原理的GGA+U方法对TiO2的金红石相、铌铁矿相、萤石相、黄铁矿相和四方P42/nmc相进行了计算。首先,优化了这几个相的晶体结构及相关参数,分析了焓曲线图,发现了在50.1GPa压强下,铌铁矿相突然直接转变成一个新的四方P42/nmc相。其次,通过GGA+U和HSE06两种方法计算讨论了四方P42/nmc相的能带结构,并拟合分析了三阶B-M状态方程和XRD图谱。最后,通过分析相变压强范围、体弹模量和XRD图谱,本文认为四方P42/nmc相与立方萤石相是共存的,能很好符合2004年立方TiO2的实验结果。     

高压下铌铁矿相TiO_2直接相变的第一性原理研究

利用第一性原理的GGA+U方法对TiO_2的金红石相、铌铁矿相、萤石相、黄铁矿相和四方P42/nmc相进行了计算.首先,优化了这几个相的晶体结构及相关参数,分析了焓曲线图,发现了在50.1GPa压强下,铌铁矿相突然直接转变成一个新的四方P42/nmc相.其次,通过GGA+U和HSE06两种方法计算讨论了四方P42/nmc相的能带结构,并拟合分析了三阶B-M状态方程和XRD图谱.最后,通过分析相变压强范围、体弹模量和XRD图谱,本文认为四方P42/nmc相与立方萤石相是共存的,能很好符合2004年立方TiO_2的实验结果 .