Study of the Electroless Silver Seed Formation on Silicon Surface

The silver seed on silicon was prepared through aqueous I-IF and AgNO3 solution at room temperature. In order to explore the formation process of silver seed on silicon, the methods of open circuit potential with time （OCP-t）, anodic stripping sweep voltammetry （ASV） and scanning tunneling microscope （STM） were used in this work. The procedure of silver nucleus growing into large particles was explained by electro-negativity. The growth mechanism of silver seed on silicon has been presented： at first, the silver monolayer and multilayer firstly grows onto silicon without fully covering the surface at the expense of silicon etching due to the silver seed attracting the electron from silicon, after that, the monolayer coalesces together, forming continuous grain film with some silver atoms diffusing into the silicon and the multilayer still grows thick simultaneously.     

ZnO/eosin-Y混合薄膜的生长机理和形态

Thin hybrid films of ZnO/eosin-Y were prepared by electrodeposition at-0.8 and-0.9 V in aqueous and non-aqueous baths at temperatures ranging from 40 to 90 ℃ with dye concentrations of 100 and 400 μmol·L-1.The films were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM),energy-dispersive X-ray analysis (EDX),and absorption spectroscopy.The films prepared in a non-aqueous bath were non-porous and did not adsorb dye molecules on their surface.However,the films grown in aqueous media were porous in nature and adsorbed dye during the deposition of ZnO.Preferential growth of the film along the (002) face was observed,and the highest crystallinity was achieved when the film was deposited at 60 ℃.The maximum absorption was achieved for the films grown at 60 to 70 ℃,a deposition potential of-0.9 V,and a dye concentration of 100 μmol·L-1.     

化学浴沉积法制备高取向钒酸铋薄膜

Highly oriented BiVO₄ films were synthesized on glass substrates by modified chemical bath deposition (CBD). The influence of the deposition parameters as temperature and time of deposition on the rate of process and the quality of BiVO₄ films was studied by XRD, Raman Spectroscopy and SEM. The film deposited at 90 ℃ for 12 h was dense and uniform. The BiVO₄ thin film under this optimal depositing conditions was consisted of octagonal crystalline grains in a narrow size distribution with an average size of about 7 μm, showing a (004) preferential orientation.     

Pulsed Laser Deposition ZnS Buffer Layers for CIGS Solar Cells

Polycrystalline ZnS films were prepared by pulsed laser deposition （PLD） on quartz glass substrates under different growth conditions at different substrate temperatures of 20, 200, 400, and 600 ℃, which is a suitable alternative to chemical bath deposited （CBD） CdS as a buffer layer in Cu（In,Ga）Se2 （CIGS） solar cells. X-ray diffraction studies indicate the films are polycrystalline with zinc-blende structure and they exhibit preferential orientation along the cubic phase β-ZnS （111） direction, which conflicts with the conclusion of wurtzite structure by Murali that the ZnS films deposited by pulse plating technique was polycrystalline with wurtzite structure. The Raman spectra of grown films show Al mode at approximately 350 cm^-1, generally observed in the cubic phase β-ZnS compounds. The planar and the cross-sectional morphology were observed by scanning electron microscopic. The dense, smooth, uniform grains are formed on the quartz glass substrates through PLD technique. The grain size of ZnS deposited by PLD is much smaller than that of CdS by conventional CBD method, which is analyzed as the main reason of detrimental cell performance. The composition of the ZnS films was also measured by X-ray fluorescence. The typical ZnS films obtained in this work are near stoichiometric and only a small amount of S-rich. The energy band gaps at different temperatures were obtained by absorption spectroscopy measurement, which increases from 3.2 eV to 3.7 eV with the increasing of the deposition temperature. ZnS has a wider energy band gap than CdS （2.4 eV）, which can enhance the blue response of the photovoltaic cells. These results show the high-quality of these substitute buffer layer materials are prepared through an all-dry technology, which can be used in the manufacture of CIGS thin film solar cells.     

CARBON FILMS PREPARED BY PLASMA POLYMERIZATION OF NATURAL GAS(Ⅱ)MECHANICAL PROPERTIES OF CARBON FILMS

Mechanical properties of carbon films deposited by plasma polymerization on different sub-strates were studied.Film hardness was measured to be approximately 20GPa.Adhesive scratch testsfound the critical load L,at which film failure occurred,of the films on silicon,glass,hard magneticrecording disc were 28,45 and 18N,respectively.No definite value was detected for the film on bear-ing steel substrate.Tribological study suggests that the friction coefficient of the films was in the rangeof 0.1—0.3.The wear rate of the carbon film was 1-2 orders of magnitude lower than that of thesubstrates.Micrographs of the wear tracks and the magnitude of the wear coefficients indicate that thelikely wear mechanism is the threebody abrasive wear.Films with stable low friction coefficient andsuperior wear resistance were obtained on silicon and steel substrates.     

Effect of 3-Amino-5-mercapto-1,2,4-triazole on Electroless Nickel Deposition

The effects of organic additive, 3-amino-5-mercapto-1,2,4-triazole （AMTA） on bath stability, deposition rate, reaction activation energy, and Ni-P coating composition in acidic electroless nickel plating were investigated. Polarization curve method and infrared reflection spectroscopy were used to analyze the mechanism of the effect of AMTA on electroless nickel deposition. It was observed that AMTA improved bath stability, decreased the deposition rate, and increased the reaction activation energy. It was also revealed that AMTA decreased the phosphorus content and increased the sulfur content in Ni-P coating. In addition, AMTA inhibited the anodic oxidation of hypophosphite and accelerated the cathodic reduction of Ni^2＋. Infrared reflection spectroscopy result indicates that AMTA was adsorbed on the surface of Ni-P and interacted with Ni^2＋ to form an AMTA-Ni^2＋ compound. On the basis of the results of this study, the mechanism of the effect of AMTA on electroless nickel deposition was deduced.     

Amplified Electrochemical Immunoassay Using HRP Labeled Protein as an Inhibitor to Silver Deposition in the Presence of H2O2

A novel electrochemical immunosensor with amplification effect based on the enzyme inhibition of silver deposition was proposed. In this method, the capture antibody was first immobilized onto a gold electrode via a self-assembled layer. After a sandwich immunoreaction, HRP labeled antibody was bound to the gold electrode. The HRP on the electrode inhibited silver deposition when the electrode was incubated in hydroquinone-H2O2 solution and silver ion solution. The linear sweep voltammetry was chosen to detect the deposited silver and the result showed that the peak current was linearly proportional to the content of IgG in the range of 50 to 2500 ng/mL with a detection limit of 35 ng/mL.     

Effects of ZnO Buffer Layer Thickness on Properties of MgxZn1-xO Thin Films Deposited by MOCVD

High-quality MgxZn1-xO thin films were grown on sapphire（0001 ） substrates with a ZnO buffer layer of different thicknesses by means of metal-organic chemical vapor deposition. Diethyl zinc, bis-cyclopentadienyl-Mg and oxygen were used as the precursor materials. The crystalline quality, surface morphologies and optical properties of the Mg, Zn1-xO films were investigated by X-ray diffraction, atomic force microscopy and photoluminescence spectrometry. It was shown that the quality of the MgxZn1-xO thin films depends on the thickness of the ZnO buffer layer and an Mg, Zn1-xO thin film with a ZnO buffer layer whose thickness was 20 nm exhibited the best crystal-quality, optical properties and a flat and dense surface.     

Photo-assisted Deposited Titanium Dioxide Film and the Enhancement of Its Photocatalytic Water Splitting Activity

Photo-assisted deposited method is often employed in the metal-organic chemical vapor deposition whose ion source is organic compounds. It has been proved to increase the deposition rate and improve the crystallinity of the films. We demonstrate a photo-assisted sputtering deposited method which is used to prepare high quality TiO_2 films. The crystallinity of the films is improved by the photo assistance without changing the morphology. And the structural and optical properties remain the same. The photo-assisted deposited TiO_2 film shows a H2 evolution rate of 1.62 μmol·cm~(-2)·h~(-1) that is about twice more than that of the pristine TiO_2 film. It is found the Mott-Schottky effect responds for the photocatalytic activity. Photo-assisted deposited films show an enhanced photocatalytic activity due to the reduction of interface recombination and the high efficiency in the transferring of photo-generated carriers.     

Comparative study of electrolessly deposited Pd/Ag films onto p-silicon (100)-activated seed layers of Ag and Pd

Pd/Ag films were electrolessly deposited onto p-silicon (100)-activated seed layers of Ag and Pd, respectively, in the solution of 0.005 mol l⁻¹ AgNO₃ + 0.005 mol l⁻¹ PdCl₂ + 4.5 mol l⁻¹ NH₃ + 0.16 mol l⁻¹ Na₂EDTA+0.1 mol l⁻¹ NH₂NH₂ (pH 10.5) at room temperature. The morphology and composition of the films were studied comparatively by using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). Cathodic polarization curves for hydrogen evolution were recorded in 0.5-mol l⁻¹ H₂SO₄ without illumination, in which the obtained films served as working electrodes. The experimental results show that the film obtained on the Ag seed layer was rather a pure Ag film and not a Pd/Ag film, and the Ag deposition rate on Pd sites was much faster than that on Ag sites.     

Novel Electroless Deposition of Cu<Subscript>3</Subscript>Se<Subscript>2</Subscript> Film on Silicon Substrate by a Simple Galvanic Displacement Process

A novel electroless deposition method for depositing highly uniform adhesive thin films of copper selenide (Cu₃Se₂) on silicon substrates from aqueous solutions is described. The deposition is carried out by two coupled galvanic reactions in a single deposition bath containing copper cations, hydrogen fluoride, and selenous acid: the galvanic deposition of copper on silicon and the subsequent galvanic reaction between the deposited copper with selenous acid in the deposition bath. The powder X-ray diffraction and scanning electron microscopy are used to characterize and examine the deposited films.     

Photo-Induced Hydrophilicity of TiO<Subscript>2</Subscript> Films Deposited on Stainless Steel via Sol-Gel Technique

The photo-induced hydrophilicity of TiO₂ films deposited on stainless steel substrates and silicon wafers using two different sol-gel routes has been investigated. The results indicate that crystalline titanium oxide films with excellent hydrophilic properties can be obtained on silicon wafer with both routes. XPS and XRD data reveal that films deposited on stainless steel exhibit crystallization features similar to those of films deposited on silicon wafers, and only differ by their oxidation degree owing to a TiO₂ reduction process associated to a diffusion of iron ions during deposition of the acidic sol and/or high temperature post-treatment. Consequently, hydrophilic properties of films deposited on stainless steel are inhibited. The deposition of a SiO_x barrier layer at the film/substrate interface allows preventing such a detrimental substrate influence. A low temperature deposition route of the TiO₂ film associated to the presence of a barrier layer yields best results in preventing iron contamination of the films.     

Laser assisted selective chemical metalization of Al<Subscript>2</Subscript>O<Subscript>3</Subscript> films

Thick aluminum oxide films are prepared on Al plates by anodizing. On the ceramic surface thus obtained a very thin Ag film is deposited via vacuum thermal evaporation. The Ag/Al₂O₃/Al samples prepared are irradiated by Nd:YAG laser through a suitable metal mask in order to remove the top metal film in the exposed areas. Thus, a negative silver image of the copied mask is obtained. Further, the samples are processed in Ni electroless chemical bath activated by the rest of silver. All processing steps are studied by scanning electron microscopy (SEM). EDS X-ray mapping is applied to study the final distribution of Al and Ni in the processed areas. In addition, the DC conductivity of the fabricated Ni wires obtained is measured. The proposed new method for selective chemical deposition of electroconductive Ni onto laser microstructured Ag/Al₂O₃/Al samples is simple, versatile and not restricted to the metal/ceramic system studied as well as to the electroless deposited metal.     

Self-assembled synthesis of SERS-active silver dendrites and photoluminescence properties of a thin porous silicon layer

Via electroless metal deposition, well-defined silver dendrites and thin porous silicon (por-Si) layers are simultaneously prepared in ammonia fluoride solution containing AgNO₃ at 50 °C. A self-assembled localized microscopic electrochemical cell model and a diffusion-limited aggregation mode are used to explain the growth of silver dendrites. The formation of silver dendritic nanostructures derives from the continuous aggregation growth of small particles on a layer of silver nanoparticles or nanoclusters (Volmer-Weber layer). Thin and homogeneous nanostructure por-Si layers display visible light-emission properties at room temperature. The investigation of the surface-enhanced Raman scattering (SERS) reveals that the film of silver dendrites on por-Si is an excellent substrate with significant enhancement effect.     

Reflective and conductive surface‐silvered polyimide films prepared by surface graft copolymerization and electroless plating

Argon plasma‐pretreated polyimide (PI) films were subjected to UV‐induced surface graft copolymerization with 4‐vinylpyridine(4VP) under atmospheric conditions. Electroless plating of silver was carried out effectively on the 4VP graft copolymerized PI (PI‐g‐P4VP) surface after PdCl₂ activation and in the absence of SnCl₂ sensitization (the Sn‐free process). The surface compositions of the modified PI films were studied by X‐ray photoelectron spectroscopy (XPS). XPS results showed that the PI‐g‐P4VP surface is ready for electroless deposition of silver via the Sn‐free process. The grafted 4VP layer with well‐preserved pyridine groups was used not only as the chemisorption sites for the palladium complexes (without the need for prior sensitization by SnCl₂) during the electroless plating of silver, but also as an adhesion promotion layer for the electrolessly deposited silver. The silver metallized PI films show high reflectivity and conductivity with a surface resistance of 1.5 Ω and a reflectivity of 91.3%, respectively. Copyright © 2007 John Wiley & Sons, Ltd.     

用化学镀法制备 Pd/Ag 膜时膜厚和组成的控制

 研究了不同 Pd2+含量的镀液在多孔陶瓷载体上的化学沉积规律, 发现当 Pd 沉积层厚度达到约 5 μm 后, 即使镀液中反应物的消耗比例很小, 膜厚增长也明显变缓, 沉积反应主要受膜层表面的催化活性位控制; 当镀液中 Pd2+含量只能沉积形成小于 4 μm 的 Pd 膜时, 在 323 K 化学镀 180 min 后, 镀液中 Pd2+的转化率高于 90%. 与之相似, 当 Ag 镀液中的 Ag+含量等于 0.5~2 μm 的 Ag 膜层所需量时, 在 333 K 化学镀 120 min 后, Ag+的转化率可达 95%. Ag+的高转化率与 Ag 颗粒的择向生长特性有关. 根据 Pd 和 Ag 的化学镀沉积规律, 通过调节镀液中金属离子的含量能够预先设计和精确控制超薄 Pd/Ag 膜的膜厚和组成.     

A Fast Deposition‐Crystallization Procedure for Highly Efficient Lead Iodide Perovskite Thin‐Film Solar Cells

Thin‐film photovoltaics based on alkylammonium lead iodide perovskite light absorbers have recently emerged as a promising low‐cost solar energy harvesting technology. To date, the perovskite layer in these efficient solar cells has generally been fabricated by either vapor deposition or a two‐step sequential deposition process. We report that flat, uniform thin films of this material can be deposited by a one‐step, solvent‐induced, fast crystallization method involving spin‐coating of a DMF solution of CH₃NH₃PbI₃ followed immediately by exposure to chlorobenzene to induce crystallization. Analysis of the devices and films revealed that the perovskite films consist of large crystalline grains with sizes up to microns. Planar heterojunction solar cells constructed with these solution‐processed thin films yielded an average power conversion efficiency of 13.9±0.7 % and a steady state efficiency of 13 % under standard AM 1.5 conditions.     

Annealing-free adhesive electroless deposition of a nickel/phosphorous layer on a silane-compound-modified Si wafer

In this study, a post-annealing-free, adhesive nickel/phosphorous (Ni/P) layer was deposited on a 3-[2-(2-aminoethylamino)ethylamino] propyl-trimethoxysilane-modified (ETAS-modified) silicon (Si) surface through an electroless deposition process catalyzed by a novel polyvinylpyrrolidone-capped palladium nanocluster (PVP-nPd). ETAS was covalently bonded on the Si surface, whereas the amino groups on ETAS bridged with the palladium core in the PVP-nPd clusters. Because of the mentioned two effects, the deposited Ni/P layer showed superior adhesion on the Si wafer without the requirement of conventional annealing treatment. Compared with the Ni/P films deposited on bare and ETAS-modified Si surfaces by using commercial Sn/Pd colloids, the adhesion of the Ni/P film catalyzed by PVP-nPd on the ETAS-modified Si wafer improved 4- and 2-fold, respectively.