Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition

Indium oxide, tin oxide and indium tin oxide nanowires have been grown by vapor deposition on Si and quartz substrates. Under the growth conditions used, pure SiO_x nanowires, a mixture of SiO_x and indium oxide, tin oxide or indium tin oxide nanostructures, or pure indium oxide, tin oxide or indium tin oxide nanostructures could be obtained at different substrate temperatures. The growth mechanism of the obtained nanostructures at different substrate temperatures is discussed. Optical and electrical properties of the deposited pure indium oxide, tin oxide or indium tin oxide nanostructures have been measured, and low sheet resistances on quartz substrates have been obtained for indium oxide and indium tin oxide nanostructures.     

Helical nanostructures of SiOx synthesized through the heating of Co-coated substrates

This paper presents the use of the simple annealing technique at 1000 °C to produce the helical nanostructures of SiO_x. We have employed the Co-coated Si substrates, with Co layer and Si substrate utilized as catalyst and Si source, respectively. Beside the ordinary straight nanowires, the helical nanowires such as nanosprings and nanorings were observed. The product was an amorphous structure of SiO_x. We have discussed the possible growth mechanism. Photoluminescence spectrum of the SiO_x nanostructures showed a blue emission at 428 nm and a green emission at 534 nm, respectively.     

Optical properties of MgxZn1−xO nanowire photonic crystals

We investigate the optical properties of two-dimensional periodic arrays of well-aligned Mg_xZn_1−xO nanowires, i.e., Mg_xZn_1−xO nanowire photonic crystals. The nanowire photonic crystal can exhibit a photonic band gap in the visible range. As the mole fraction of Mg, x, increases, the edge frequencies of the band gap increase and the band gap size decreases. The characteristics of relative band gap and vacant point defect mode are also studied with varying x. From the finite-difference time-domain simulations, we show that the light extraction from nanowires can be controlled by varying the distance between optically excited nanowires and a waveguide, and the mole fraction of Mg. Controlling the light extraction from nanostructures can be useful in the implementation of nanoscale light emitting devices.     

Structure, morphology and optical properties of SiO2−x thin films prepared by plasma-assisted pulsed laser deposition

The amorphous silicon oxide SiO_2−x thin films were prepared by the plasma-assisted pulsed laser deposition (PLD) method. X-ray diffraction spectrometry (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-VIS-NIR scanning spectrophotometry and ellipsometry were used to characterize the crystallinity, microscopic morphology and optical properties of obtained thin films. The influences of substrate temperatures, oxygen partial pressures and oxygen plasma assistance on the compositions of silicon oxide (SiO_2−x) thin films were investigated. Results show that the deposited thin films are amorphous and have high surface quality. Stoichiometric silicon dioxide (SiO₂) thin film can be obtained at elevated temperature of 200 °C in an oxygen plasma-assisted atmosphere. Using normal incidence transmittance, a novel and simple method has been proposed to evaluate the value of x in transparent SiO_2−x thin films on a non-absorbing flat substrate.     

Direct synthesis of beta gallium oxide nanowires, nanobelts, nanosheets and nanograsses by microwave plasma

In this study, beta-gallium oxide (β-Ga₂O₃) nanowires, nanobelts, nanosheets, and nanograsses were synthesized through microwave plasma of liquid phase gallium containing H₂O in Ar atmosphere using silicon as the substrate. The nanowires with diameters of about 20-30 nm were several tens of microns long and the nanobelts with thickness of about 20-30 nm were tens to hundreds of microns long. The morphology and structure of products were analyzed by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDX), transmission electron microscopy (TEM) and X-ray diffraction (XRD). These results showed that multiple nucleation and growth of β-Ga₂O₃ nanostructures could easily occur directly out of liquid gallium exposed to appropriate H₂O and Ar in the gas phase. The growth process of β-Ga₂O₃ nanostructures may be dominated by VS (vapor-solid) mechanism.     

Formation of silicon oxide nanowires directly from Au/Si and Pd–Au/Si substrates

Amorphous silicon oxide (SiO_x) nanowires were directly grown by thermal processing of Si substrates. Au and Pd–Au thin films with thicknesses of 3 nm deposited on Si (0 0 1) substrates were used as catalysts for the growth of nanowires. High-yield synthesis of SiO_x nanowires was achieved by a simple heating process (1000–1150 °C) in an Ar ambient atmosphere without introducing any additional Si source materials. The as-synthesized products were characterized by field-emission scanning electron microscopy, energy-dispersive X-ray spectroscopy, and transmission electron microscopy measurements. The SiO_x nanowires with lengths of a few and tens of micrometers had an amorphous crystal structure. The solid–liquid–solid model of nanowire formation was shown to be valid.     

Fabrication and annealing effects of SnO2/SiOx nanocables sheathed by the sputtering technique

We reported an approach, in which we have produced the nano-sized crystalline tin oxide (SnO₂) particles with rutile structure. SnO₂ nanowires were coated with a shell layer of SiO_x via a sputtering method. Transmission electron microscopy and elemental mapping investigations revealed that the nanostructures consisted of a crystalline SnO₂ core surrounded by an amorphous SiO_x sheath. The annealing effects on the core-shell nanowires were investigated, revealing that the outer surface became rougher by the thermal annealing. For core-shell nanowires, a room-temperature PL measurement with a Gaussian fitting showed yellow, blue, and violet light emission bands, with the relative intensity of the yellow band showing an increase after thermal annealing. Possible PL emission mechanisms are discussed. This study reveals that the sputtering is effective for preparing the shell layers of nanocables.     

Growth of single-walled carbon nanotubes on silicon nanowires

Single-walled carbon nanotubes (SWNTs) have been grown on silicon nanowires (SiNWs) by ethanol chemical vapor deposition (CVD) with Co catalysts. We have found that a surface SiO_x layer of SiNWs is necessary for the formation of active Co catalysts. In fact, the yield of the SWNT/SiNW heterojunctions gradually decreases as the thickness of the surface SiO_x layer decreases. Since thin SiNWs are transparent to an electron beam, the Co nanoparticles on SiNWs can be easily observed as well as SWNTs by TEM. Therefore, the relationship between the diameters of each SWNT and its catalyst nanoparticle has been investigated. The diameters of SWNTs are equal to or slightly smaller than those of the catalyst nanoparticles.     

Embedded structure of silicon monoxide in SiO2 films

The structure of SiO_x (x = 1.94) films has been investigated using both X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (TOF-SIMS). The SiO_x films were deposited by vacuum evaporation. XPS spectra show that SiO_1.94 films are composed of silicon suboxides and the SiO₂ matrix. Silicon clusters appeared only negligibly in the films in the XPS spectra. Si₃O⁺ ion species were found in the TOF-SIMS spectra with strong intensity. These results reveal the structure of the films to be silicon monoxide embedded in SiO₂, and this structure most likely exists as a predominant form of Si₃O₄. The existence of Si-Si structures in the SiO₂ matrix will give rise to dense parts in loose glass networks.     

Photoluminescence and growth mechanism of amorphous silica nanowires by vapor phase transport

Amorphous silica [SiO_x (1<x<2)] nanowires were fabricated on silicon substrate in an acidic environment by heating the mixture of ZnCl₂, and VO₂ powders at 1100 °C. The length of SiO_x nanowires ranges from micrometers to centimeters, with uniform diameters of 10–500 nm depending on substrate temperature. Room-temperature photoluminescence spectra of the SiO_x nanowires showed two strong luminescence peaks in the red and green region, respectively. The photoluminescence was suggested to originate from nonbridging oxygen hole center (red band), and hydrogen-related species in the structure of SiO_x (green band). The study on chemical reactions and growth of the SiO_x nanowires revealed the formation process of silica nanowires in acidic environment was closely related to the vapor–solid–liquid mechanism.     

Synthesis and photoluminescence of aligned straight silica nanowires on Si substrate

Aligned straight silica nanowires (NWs) have been synthesized on Si wafer by thermal evaporation of mixed powders of zinc carbonate hydroxide and graphite at 1100 °C and condensation on Si substrate without using any catalyst. The straight silica NWs have diameters ranging from 50 to 100 nm, and lengths of several micrometers, with cone-shaped tips at their ends. High deposition temperature and relatively high SiO_x vapor concentration near the growth substrate would be beneficial to the formation of the aligned straight silica NWs. Different morphologies of silica nanostructures have also been obtained by varying the deposition temperature and the vapor concentration of the SiO_x molecules. Room temperature photoluminescence measurements on the oriented silica NWs show that two green emission bands at 510 and 560 nm, respectively, revealing that the aligned straight silica NWs might have potential applications in the future optoelectronic devices.     

Structure and magnetic properties of CoxPb1−x nanowire arrays

Ordered Co_xPb_1−x nanowire arrays embedded in the porous anodic aluminum oxide (AAO) template have been fabricated by electrodeposition. XRD experiments prove that neither hexagonal-close-packed (hcp) nor face-centered-cubic (fcc) Co peaks are detected when the Co component (x) is below 0.91. The coercivity (H_c) and squareness (M_r/M_s) are found to increase with ferromagnetic Co component and the maximum value is at the position x=1 (pure Co nanowires). Annealing effects cause H_c and M_r/M_s increase, which surpasses the pure Co nanowires in the 0.2<x<0.6 at the annealing temperature of 700 °C. Microstructure change during annealing process is proposed to explain the magnetic properties change of samples.     

Room-temperature magnetic properties of SiC based nanowires synthesized via microwave heating method

Two kinds of ferromagnetic SiC based nanowires with and without Ni catalyst were successfully synthesized by employing microwave heating method. The comprehensive characterizations and vibrating sample magnetometer (VSM) have been applied to investigate the micro-structures and magnetic properties of as-grown nanowires. For the nanowires synthesized without using Ni catalyst, the diameters and lengths are in the range of 20–60 nm and dozens of micrometers, respectively. Particularly, the results of transmission electron microscopy (TEM) show that the nanowires consist of SiC core and SiO_x shell. The SiC/SiO_x coaxial nanowires exhibit room-temperature ferromagnetism with saturation magnetization (Ms) of 0.2 emu/g. As to the nanowires obtained using Ni catalyst, the scanning electron microscopy (SEM) results indicate that the Ni catalyzed nanowires have a nano-particle attached on the tip and a uniform diameter of approximately 50 nm. The vapor-liquid-solid (VLS) growth mechanism can be used to explain the formation of the Ni catalyzed nanowires. The detection result of VSM indicates that the Ni catalyzed nanowires possess the paramagnetism and the ferromagnetism, simultaneously. The enhancement of the ferromagnetism, compared with the SiC/SiO_x coaxial nanowires, could be attributed to the Ni₂Si and NiSi phases.     

Application of crystalline silicon surface oxidation to silicon heterojunction solar cells

We study the effect of ultra-thin oxide (SiO_x) layers inserted at the interfaces of silicon heterojunction (SHJ) solar cells on their open-circuit voltage (V_OC). The SiO_x layers can be easily formed by dipping c-Si into oxidant such as hydrogen peroxide (H₂O₂) and nitric acid (HNO₃). We confirm the prevention of the undesirable epitaxial growth of Si layers during the deposition of a-Si films by the insertion of the ultra-thin SiO_x layers. The formation of the SiO_x layers by H₂O₂ leads to better effective minority carrier lifetime (τ_eff) and V_OC than the case of using HNO₃. c-Si with the ultra-thin SiO_x layers formed by H₂O₂ dipping, prior to deposition of a-Si passivation layers, can have high implied V_OC of up to ∼0.714 V.     

High-resolution analytical electron microscopy of catalytically etched silicon nanowires

We report on the characterization of hexagonally ordered, vertically aligned silicon nanowires (SiNW) by means of analytical transmission electron microscopy. Combining colloidal lithography, plasma etching, and catalytic wet etching arrays of SiNW of a sub-50 nm diameter with an aspect ratio of up to 10 could be fabricated. Scanning transmission electron microscopy has been applied in order to investigate the morphology, the internal structure, and the composition of the catalytically etched SiNW. The analysis yielded a single-crystalline porous structure composed of crystalline silicon, amorphous silicon, and SiO _x with x≤2.     

Cu-doped SiOxCy nanostructures induced by radio frequency plasma jet using hexamethyldisiloxane

Formation of Cu-doped SiO_xC_y nanostructures has been studied by using hexamethyldisiloxane (HMDSO)/H₂/Ar radio frequency (RF) plasma, where a copper tube was utilized as power electrode to generate plasma jet. Tree-like nanostructures were obtained at low concentration of HMDSO. One can find the initial vertical growth of nanowires (NWs) and the spherical structures on sidewalls of the bended NWs, which were attributed to the vertical gas flow and secondary catalyzing due to copper from the ambience, respectively. However, the fragments with big mass were too many to synthesize nanostructure at high concentration of HMDSO. More Cu particles were transported to the substrate while an RF bias was applied to the substrate, which restrained the NWs growth catalyzed by Au and resulted in the formation of acaleph-like nanostructures.     

Defect reduction and surface passivation of SiO2/Si by heat treatment with high-pressure H2O vapor

Heat treatment with high-pressure H₂O vapor was applied to improve interface properties of SiO₂/Si and passivate the silicon surface. Heat treatment at 180–420 °C with high-pressure H₂O vapor changed SiO_x films, 150 nm thick formed at room temperature by thermal evaporation in vacuum, into SiO₂ films with a Si-O-Si bonding network similar to that of thermally grown SiO₂ films. Heat treatment at 130 °C with 2.8×10⁵ Pa H₂O for 3 h reduced the recombination velocity for the electron minority carriers from 405 cm/s (as-fabricated 150-nm-thick SiO_x/Si) to 5 cm/s. Field-effect passivation was demonstrated by an additional deposition of defective SiO_x films on the SiO₂ films formed by heat treatment at 340 °C with high-pressure H₂O vapor. The SiO_x deposition reduced the recombination velocity from 100 cm/s to 48 cm/s. Received: 1 March 1999 / Accepted: 28 March 1999 / Published online: 24 June 1999     

On the short-range order of the SiOx (0 ≤ x ≤ 2) surface

Fine (oscillating) structure (FS) in the elastically scattered electron spectra (ESES) [O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Sci. 258 (1991) 239; O. Bondarchuk, S. Goysa, I. Koval, P. Melnik, M. Nakhodkin, Surf. Rev. Lett. 4 (1997) 965] was used to investigate surface structure of the SiO_x (0 ≤ x ≤ 2). SiO_x surface with different stoichiometry was prepared by implantation of 500 eV oxygen ions into a silicon wafer. Fourier transformation of the FS ESES contains one peak at 2.32 Å for Si, two peaks at 1.62 Å and 2.65 Å for a-SiO₂ and three peaks centered at 1.6-1.7 Å, 2.1-2.2 Å and 2.65-3.04 Å for SiO_x. Peaks at 1.62 Å and 2.65 Å are assigned to Si-O and O-O nearest distances correspondently. Ratio of the area under the peak at 2.65 Å to the area under the peak at 1.62 Å turned out to be not constant but grows linearly with the composition parameter x. The latter is considered to prove validity of the Random Bond Model to describe short-range order on the surface of non-stoichiometric silicon oxide.     

Electron spin resonance properties of semiconductor/granular film heterostructures with cobalt nanoparticles in millimeter waveband

Ferromagnetic resonance spectra (FMR) on heterostructures of amorphous silicon dioxide films containing cobalt nanoparticles, (SiO₂)_100−xCo_x, grown on GaAs and Si substrates have been investigated over a frequency range of 37–41 GHz at room temperature. The FMR linewidth and saturation magnetization dependencies on the cobalt concentration have been analyzed. The impact of the semiconductor type on the FMR linewidth ΔH and a sharp increase in ΔH with a decreasing concentration of cobalt nanoparticles have been noted. The effect of considerable FMR linewidth broadening has been accounted for by the spin-polarized relaxation mechanism.     

Effects of UV photon irradiation on SiOx (0 < x < 2) structural properties

Thin films of a-SiO_x (0 < x < 2) were prepared by reactive r.f. magnetron sputtering from a polycrystalline-silicon target in an Ar/O₂ gas mixture. The oxygen partial pressure in the deposition chamber was varied so as to obtain films with different values of x. The plasma was monitored, during depositions, by optical emission spectroscopy (OES) system. Energy dispersive X-ray (EDX) measurements and infra-red (IR) spectroscopy were used to study the compositional and structural properties of the deposited layers.Structural modifications of SiO_x thin films have been induced by UV photons’ bombardment (wavelength of 248 nm) using a pulsed laser. IR spectroscopy and X-ray photoemission spectroscopy (XPS) were used to investigate the structural changes as a function of x value and incident energy. SiO_x phase separation by spinodal decomposition was revealed. The IR peak position shifted towards high wavenumber values when the laser energy is increased. Values corresponding to the SiO₂ material (only Si⁴⁺) have been found for laser irradiated samples, independently on the original x value. The phase separation process has a threshold energy that is in agreement with theoretical values calculated for the dissociation energy of the investigated material.For high values of the laser energy, crystalline silicon embedded in oxygen-rich silicon oxide was revealed by Raman spectroscopy.