Preparation of Ca(1−x)EuxGa2S4 crystals and their photoluminescence, absorption and excitation spectra

The single crystal of CaGa₂S₄:Eu is expected as a useful laser material with a high quantum efficiency of light emission. However, as far as our knowledge is concerned, the systematic study of the mixed compounds of Ca_(1−x)Eu_xGa₂S₄ as a function of x has not been reported up to now. Here, we have first constructed the phase diagram of the CaGa₂S₄ and EuGa₂S₄ pseudo binary system, and show that it forms the solid solution. Then we have grown single crystals of these compounds. The maximum photoluminescence efficiency is achieved at x=0.25. From the three peak energies observed in the photoluminescence excitation (PLE) and absorption spectra, the 5d excited states are suggested to consist of three levels arising from the multiplets of Eu²⁺ ions.     

Second-harmonic generation in the thermal/electrical poling (100−x)GeS2·x(0.5Ga2S3·0.5CdS) chalcogenide glasses

Utilizing Maker fringe (MF) method, second-harmonic generation (SHG) has been observed within the GeS₂-Ga₂S₃-CdS pseudo-ternary glasses through thermal/electrical poling technique. The SHG phenomenon was considered to be the result of breakage of the glassy macroscopic isotropy originated from the reorientations of dipoles during the thermal/electrical poling process. Under the same poling condition conducted with 5 kV and 280 °C for 30 min, the maximum value of second-order nonlinear susceptibility χ⁽²⁾ of the poled (100−x)GeS₂·x(0.5Ga₂S₃·0.5CdS) glasses was obtained to be ≈4.36 pm/V when the value of x is equal to 30. Nonlinear dependence of χ⁽²⁾ on compositions of these glasses can be well explained according to the theory related to the reorientation of dipoles.     

Photoluminescence properties of Sr1-xSi2O2N2: Eux as green to yellow-emitting phosphor for blue pumped white LEDs

This study evaluated potential applications of green to yellow-emitting phosphors (Sr_1−xSi₂O₂N₂: Eu²⁺_x) in blue pumped white light emitting diodes. Sr_1-xSi₂O₂N₂: Eu²⁺_x was synthesized at different Eu²⁺ doping concentrations at 1450 °C for 5 h under a reducing nitrogen atmosphere containing 5% H₂ using a conventional solid reaction method. The X-ray diffraction patterns of the prepared phosphor (Sr_1-xSi₂O₂N₂: Eu²⁺_x) were indexed to the SrSi₂O₂N₂ phase and an unknown intermediate phase. The photoluminescence properties of these phosphors (Sr_1−xSi₂O₂N₂: Eu²⁺_x) showed that the samples were excited from the UV to visible region due to the strong crystal field splitting of the Eu²⁺ ion. The emission spectra under excitation of 450 nm showed a bright color at 545-561 nm. The emission intensity increased gradually with increasing Eu²⁺ doping concentration ratio from 0.05 to 0.15. However, the emission intensity decreased suddenly when the Eu²⁺ concentration ratio was >0.2. As the doping concentration of Eu²⁺ was increased, there was a red shift in the continuous emission peak. These results suggest that Sr_1-xSi₂O₂N₂: Eu₂⁺_x phosphor can be used in blue-pumped white light emitting diodes.     

Chiral optical absorption bands in [ ]Cd1−x Mnx Ga2S4 semiconducting compound

[ ]Cd_1−x Mn_x Ga₂S₄ is a semimagnetic semiconductor and it has revealed an exceptional property namely ‘optical activity‘. Therefore, a spectroscopic investigation of chiral absorption bands has been carried out with the view to examine the role of d*-d states of manganese atoms. It has been found that inner transitions of Mn⁺⁺ dominate the spectral region with a special feature, indicating that these transitions show the presence of a substantial contribution from the magnetic dipole moment which rotates the electric vector of the incident polarized radiation. The origin is associated to the lack of a symmetry center caused by the ordered vacancies in this defect compound.     

Effect of Cu deficiency on the optical properties and electronic structure of CuIn1−xGaxSe2

Spectroscopic ellipsometry measurements of CuInSe₂ (CIS) and CuIn_1−xGa_xSe₂ (CIGS) over a range of Cu compositions reveal that there are important differences in electronic and optical properties between α-phase CIS/CIGS and Cu-poor CIS/CIGS. We find a reduction in the imaginary part of the dielectric function ?₂ in the spectral region, 1-3 eV. This reduction can be explained in terms of the Cu-3d density of states. An increase in band gap is found for Cu-poor CIS and CIGS due to the reduction in repulsive interaction between Cu-3d and Se-4p states. We also characterize the dielectric functions of polycrystalline thin-film α-phase CuIn_1−xGa_xSe₂ (x=0.18 and 0.36) to determine their optical properties and compare them with similar compositions of bulk polycrystalline CuIn_1−xGa_xSe₂. The experimental results have important implications for understanding the functioning of polycrystalline optoelectronic devices.     

Effect of Bi2O3 on EPR, optical transmission and DC conductivity of vanadyl doped alkali bismuth borate glasses

Glasses with composition xBi₂O₃·(30−x)M₂O·70B₂O₃ (M=Li, Na) containing 2 mol% V₂O₅ have been prepared over the range 0≤x≤15 (x is in mol%). The electron paramagnetic resonance spectra of VO²⁺ of these glasses have been recorded in the X-band (≈9.3 GHz) at room temperature (RT≈300 K). Spin Hamiltonian parameters, g_∥, g_⊥, A_∥, A_⊥, dipolar hyperfine coupling parameter, P, and Fermi contact interaction parameter, K, have been calculated. The molecular orbital coefficients, α² and γ², have been calculated by recording the optical transmission spectra. In xBi₂O₃·(30−x)Li₂O·70B₂O₃ glasses there is decrease in the tetragonality of the V⁴⁺O₆ complex for x up to 6 mol% whereas for x≥6 mol%, tetragonality increases. In xBi₂O₃·(30−x)Na₂O·70B₂O₃ glasses there is increase in the tetragonality of the V⁴⁺O₆ complex with increasing x. The 3d_xy orbit expands with increase in Bi₂O₃:M₂O ratio. Values of the theoretical optical basicity, Λ_th, have also been reported. The DC conductivity increases with increase in temperature. The order of conductivity is 10⁻⁵ ohm⁻¹ m⁻¹ at low temperature and 10⁻³ ohm⁻¹ m⁻¹ at high temperature. The DC conductivity decreases and the activation energy increases with increase in Bi₂O₃:M₂O ratio.     

Photoluminescence properties of Eu in Y(PO3)3 under VUV excitation

The photoluminescence properties of Y_1−x(PO₃)₃:xEu³⁺ (0<x≤0.2) are investigated. The excitation spectrum of Y_0.85(PO₃)₃:0.15Eu₃⁺ shows that both the (PO₃)₃³⁻ groups and the CT bands of O²⁻-Y³⁺ can efficiently absorb the excitation energy in the region of 120-250 nm. Under 147 nm excitation, the optimal emissive intensity of Y_1−x(PO₃)₃:xEu³⁺ (0<x≤0.2) is about 36% of the commercial phosphor (Y,Gd)BO₃:Eu³⁺, which hints that the absorbed energy by the host matrix could be efficiently transferred to Eu³⁺. We try to study the concentration quenching mechanism of Y_1−x(PO₃)₃:xEu³⁺ (0<x≤0.2) under 147 and 172 nm excitation.     

Sr2CeO4:Eu and Sr2CeO4:5 mol% Eu, 3 mol% Dy microphosphors: Wet chemistry synthesis from hybrid precursor and photoluminescence properties

In this article, Sr₂CeO₄:x mol% Eu³⁺ and Sr₂CeO₄:5 mol%Eu³⁺, 3 mol% Dy³⁺ phosphors were synthesized from assembling hybrid precursors by wet chemical method. As-prepared samples present uniform grain-like morphology and the particle size is about 0.2 μm. The luminescence spectra of Sr₂CeO₄:x mol% Eu³⁺ have been measured to examine the influence of the intensity of red emission lines for Eu³⁺ on the concentration of Eu³⁺, showing that the intensity of the red emission increases with an increase of the concentration from 1 to 5 mol%. Additionally, from the emission spectra of Sr₂CeO₄:5 mol%Eu³⁺, 3 mol% Dy³⁺ phosphors, the characteristic lines of Dy³⁺ have also been observed. This result indicates that there also exists an energy transfer process between Sr₂CeO₄ and Dy³⁺.     

Polymorphism in Cu-substituted GaV4S8: structural and electronic properties

The hexagonal and cubic phases of Ga_1−xCu_xV₄S₈ are obtained by different methods of preparation. The reaction of elements above 900 °C gives hexagonal phases for large range of x=0.02-0.5. These are metallic and show enhanced paramagnetism. The reduction of oxides by H₂S at a lower temperature of 700 °C gives non-stoichiomertic compositions of cubic-V₄ cluster compound GaV₄S₈. The solubility of Cu-atoms in cubic phase is less than 10% and above x=0.2 the samples contain a mixture of phases, Cu_xVS₂, Ga_xVS₂ and CuGaS₂. The cubic phases are insulating and show Mott's Variable Range Hopping conduction. The non-stoichiomerty and the Cu-substitution reduce the resistivity and thermopower. For x=0.15 and 0.20, the additional peaks are observed in X-ray patterns. These compositions showed a sharp metal to insulator transition on cooling below 180 K. The transitional behaviour is very similar to that previously reported intercalated VS₂ compound Al_xVS₂. The transport and magnetic properties of these phases are discussed in terms of the clustering interactions among V-atoms and the localisation of carriers on the metallic clusters frequently found in V-chalcogenides.     

Pressure dependence of dielectric constant,elastic constants,and lattice parameters of the Y3(Ga,Al)5O12 host

Atomistic simulations were performed to investigate the lattice parameters, dielectric constant, and elastic constants of Y₃(Ga_xAl_5−x)O₁₂ (x = 1, 2, 3, 4, 5) structures. The calculated lattice parameters and elastic constants are in good agreement with those in available experimental results. The pressure dependence of all studied quantities was investigated. In general, a change in the behavior of all studied quantities is found when the Ga concentration becomes more than that of the aluminum (Al) in Y₃(Ga_xAl_5−x)O₁₂ (x = 1, 2, 3, 4, 5) structures.     

Effect of composition and thermal annealing on the absorption and electrical conduction of Se85−xTe15Sbx glasses

The optical absorption of the as-prepared and thermally annealed Se_85−xTe₁₅Sb_x (0≤x≤9) thin films was measured. The mechanism of the optical absorption follows the rule of non-direct transition. The optical energy gap (E₀) decreased from 1.12 to 0.84 eV with increasing Sb content of the as-prepared films from 0 to 9 at.%. The as-prepared Se₇₆Te₁₅Sb₉ films showed an increase in (E₀) with increasing the temperature of annealing in the range above T_g (363 K). The electrical conductivity of the as-prepared and annealed films was found to be of Arrhenius type with temperature in the range 300-360 K. The activation energy for conduction was found to decrease with increasing both the Sb content and temperature of annealing. The results were discussed on the basis of the lone-pair electron effect and of amorphous crystalline transformation.     

Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7−2xEux)(Ca0.3Srx)MnO3 (0.05≤x≤0.15)

Magnetoresistance (MR) and magnetization (dc and ac) measurements have been carried out on the manganites, (La_0.7−2xEu_x)(Ca_0.3Sr_x)MnO₃ (0.05≤x≤0.15), in the temperature range of 5-320 K. At 5 K, an unusually large MR of almost 98% is observed in the x=0.15 sample, nearly up to fields of 4-5 T. This large high-field MR occurs in the metallic region, far below the insulator-metal transition temperature, and does not vary linearly with applied field. The unusual magnetoresistance is explained in the light of various possibilities such as phase segregation, cluster spin-glass behavior, etc.     

Properties of CuIn(SxSe1−x)2 polycrystalline thin films prepared by chemical spray pyrolysis

CuIn(S_xSe_1−x)₂ thin polycrystalline films were grown by the chemical spray pyrolysis method on the glass substrate at 280-400°C. The alloy composition in the film was studied with relation to that in the splay solution. Films were characterized by X-ray diffraction, optical absorption, Raman spectroscopy, resistivity and surface morphology. The CuInSe₂-rich alloy films grown at high substrate temperature had chalcopyrite structure, while, the CuInS₂-rich films grown at low substrate temperature exhibited sphalerite structure. Optical-gap energies were smaller than that of the bulk crystal by 0.1-0.2 eV for CuInS₂-rich films. Raman spectra exhibited both CuInSe₂-like and CuInS₂-like A₁ modes, and their relative changed systematically with alloy composition.     

Control of luminescence and conductivity of delafossite-type CuYO2 by substitution of rare earth cation (Eu, Tb) and/or Ca cation for Y cation

Delafossite-type oxides of CuTb_yY_1−yO₂, CuEu_yY_1−yO₂, CuCa_xTb_yY_1−x−yO₂ and CuCa_xEu_yY_1−x−yO₂ have been prepared by solid state reactions. The lattice-parameter dependence on the composition implies substitution of the Tb³⁺, Eu³⁺ and Ca²⁺ cations for the Y³⁺ site. Noticeable sharp emission lines due to the f-f transitions (⁵D₄→⁷F_J, J=3-6) of Tb³⁺ or due to the f-f transitions (⁵D₀→⁷F_J, J=0-4) of Eu³⁺ are observed at room temperature. Electrical conductivities of CuCa_xTb_yY_1−x−yO₂ and CuCa_xEu_yY_1−x−yO₂ are larger than those of CuTb_yY_1−yO₂ and CuEu_yY_1−yO₂, indicating the increase of the hole concentration caused by the substitution of Ca²⁺ for the Y³⁺ site. These results indicate the controllability of the luminescence and conductivity in CuCa_xTb_yY_1−x−yO₂ and CuCa_xEu_yY_1−x−yO₂ delafossite-type oxides by simultaneous substitution of the rare earth Tb³⁺ or Eu³⁺ cation and the Ca²⁺ cation for the Y³⁺ site.     

Third-order nonlinear optical properties of Bi2S3 and Sb2S3 nanorods studied by the Z-scan technique

Bismuth sulfide (Bi₂S₃) and antimony sulfide (Sb₂S₃) nanorods were synthesized by hydrothermal method. The products were characterized by UV-vis spectrophotometer, X-ray powder diffraction (XRD) and transmission electron microscope (TEM). Bi₂S₃ and Sb₂S₃ nanorods were measured by Z-scan technique to investigate the third-order nonlinear optical (NLO) properties. The result of NLO measurements shows that the Bi₂S₃ and Sb₂S₃ nanorods have the behaviors of the third-order NLO properties of both NLO absorption and NLO refraction with self-focusing effects. The third-order NLO coefficient χ⁽³⁾ of the Bi₂S₃ and Sb₂S₃ nanorods are 6.25×10⁻¹¹ esu and 4.55×10⁻¹¹ esu, respectively. The Sb₂S₃ and Bi₂S₃ nanorods with large third-order NLO coefficient are promising materials for applications in optical devices.     

Synthesis and luminescence behavior of Eu-doped CaF2 nanoparticles

Luminescent Ca_1−xF_2+x:Eu_x nanoparticles were synthesized by a chemical co-precipitation method in an ethanol solution. The Ca_1−xF_2+x:Eu_x nanoparticles exhibit a sphere-like morphology with particle diameter of about 15-20 nm. With increasing concentration of Eu³⁺ ion the intensity of XRD diffraction peaks decreased significantly and full width at half-maximum of the peaks increased gradually, which indicated that more Eu³⁺ ions resulted in the increase of structural defects. The emission spectrum of Ca_1−xF_2+x:Eu_x nanoparticles consisted of a few narrow, sharp lines corresponding to Eu³⁺ ions. The luminescence intensity of Ca_1−xF_2+x:Eu_x nanoparticles increased with increasing concentration of Eu³⁺ ion and reached a maximum at approximately 15 mol%.     

Ca1−xMo1−ySiyO4:Eux: A novel red phosphor for white light emitting diodes

Single phase of Ca_1−xMo_1−ySi_yO₄:Eu_x³⁺ (0.18?x?0.26, 0?y?0.04) was synthesized by solid-state method. The photoluminescence investigation indicated that Ca_1−xMoO₄:Eu_x³⁺ (0.18?x?0.26) could be effectively excited by 393 and 464 nm, and it exhibited an intense red emission at 615 nm. The introduction of Si⁴⁺ ions did not change the position of the peaks but strongly enhanced the emission intensity of Eu³⁺ under 393 and 464 nm excitations and showed very good color purity. The emission intensity of optimal Ca_0.8Mo_0.98Si_0.02O₄:Eu_0.2³⁺ sample (excited by 393 nm) was about 5.5 times higher than that of the phosphor Y₂O₂S:0.05Eu³⁺. So this phosphor could be nicely suitable for the application of the UV LED chips.     

Effect of Ca and Sr alkaline earth ions on luminescence properties of BaAl12O19:Eu nanophosphor

Nanosized barium aluminate materials was doped by divalent cations (Ca²⁺, Sr²⁺) and Eu²⁺ having nominal compositions Ba_1−xMxAl₁₂O₁₉:Eu (M=Ca and Sr) (x=0.1-0.5), were synthesized by the combustion method. These phosphors were characterized by XRD, scanning electron microscopy-energy-dispersive spectrometry (SEM-EDS) and photoluminescence measurement. The photoluminescence characterization showed the presence of Eu ion in divalent form which gave emission bands peaking at 444 nm for the 320 nm excitation (solid-state lighting excitation), while for 254 nm it gave the same emission wavelength of low intensity (1.5 times) compared to 320 nm excitation. It was also observed that alkaline earth metal (Ca²⁺ and Sr²⁺) dopants increase the intensity of Eu²⁺ ion in BaAl₁₂O₁₉ lattice, thus this phosphor may be useful for solid-state lighting.     

Spin-glass and spin-fluctuation in Mo-doped Ca3Co4O9 system

Structural, magnetic, resistivity and thermal transport measurements have been performed to study the Mo-doping effect on a layered cobaltite Ca₃Co_4−xMo_xO₉(0≤x≤0.4) system. The results indicate that the low-temperature magnetic behavior of the system changes from a ferrimagnetic state to a spin-glass-like state upon Mo doping, which is due to the decrease in the average valence of Co ions. Moreover, all the Mo-doped samples have a higher resistivity and larger thermopower S compared with the Mo-free sample. The variation in the resistivity and thermopower between the Mo-doped and the Mo-free samples is dominated by the change in the carrier concentration of the samples. In the Mo-doped samples with x≥0.1, both the resistivity and thermopower decrease gradually with increasing Mo-doping level, which is suggested to mainly originate from the variation in the carrier mobility of the samples. In addition, an obvious thermopower upturn is observed in the S(T) curve of all the Mo-doped samples, which can be explained by the enhancement of spin-fluctuation induced by Mo-doping.     

Magnetoelectric characterization of xNi0.75Co0.25Fe2O4-(1−x)BiFeO3 nanocomposites

Magnetoelectric (ME) nanocomposites containing Ni_0.75Co_0.25Fe₂O₄-BiFeO₃ phases were prepared by citrate sol-gel process. X-ray diffraction (XRD) analysis showed phase formation of xNi_0.75Co_0.25Fe₂O₄-(1−x)BiFeO₃ (x=0.1, 0.2, 0.3 and 0.4) composites on heating at 700 °C. Transmission electron microscopy revealed the formation of powders of nano order size and the crystal size was found to vary from 30 to 85 nm. Dispersion in dielectric constant (ε) and dielectric loss (tan δ) in the low-frequency range have been observed. It is seen that nanocomposites exhibit strong magnetic properties and a large ME effect. On increasing Ni_0.75Co_0.25Fe₂O₄ contents in the nanocomposites, the saturation magnetization (M_S) and coercivity (H_C) increased after annealing at 700 °C. The large ME output in the nanocomposites exhibits strong dependence on magnetic bias and magnetic field frequency. The large value of ME output can be attributed to small grain size of ferrite phase of nanocomposite being prepared by citrate precursor process.