Electrical properties of the Ag6PSe5X (X=Cl, Br, I) argyrodites

The total electrical conductivities at room temperature of Ag₆PSe₅Cl, Ag₆PSe₅Br, and Ag₆PSe₅I were found to be 2.0×10⁻⁴, 5.6×10⁻⁴, and 6.8×10⁻⁴ S/cm, respectively. In the chloride and iodide compounds, the electronic contribution comprises approximately 1% of the total conductivity, although it exceeds 10% of the total conductivity in the bromide compound. Ag₆PSe₅Cl and Ag₆PSe₅Br exhibit purely Arrhenius behavior throughout the temperature range 150-300 K. Ag₆PSe₅I exhibits a second-order anomaly in electrical conductivity at 324 K.     

The effect of sulfide substitution in the mixed conductor Cu7PSe6

Cu₇PSe₆ is a mixed conductor exhibiting structural phase transitions above and below room temperature that are accompanied by step-like changes in electrical conductivity. The substitution of S²⁻ for Se²⁻ in Cu₇PSe₆ significantly enhances electrical conductivity at room temperature compared to that observed for the pure compound. In the case of Cu₇P(Se_0.80S_0.20)₆, a nearly temperature-independent electrical conductivity exceeds 1 S/cm with no evidence of any phase transitions throughout the temperature interval 200-400 K. However, the ionic contribution accounts for just 2% of the total electrical conductivity in this solid solution at room temperature.     

The effect of Ag substitution in the mixed conductor Cu7PSe6

Cu₇PSe₆ is a mixed conductor that crystallizes in the simple cubic structure at room temperature. Structural transitions above and below room temperature are accompanied by step-like changes in electrical conductivity. The substitution of Ag⁺ for Cu⁺ in Cu₇PSe₆ stabilized the simple cubic structure over a wider range of temperatures than is observed for the pure compound. A disproportionate decrease in electrical conductivity accompanies modest levels of silver substitution. The prominent step in electrical conductivity associated with the low-temperature crystallographic phase transition disappears in (Ag_xCu_1−x)₇PSe₆ solid solutions for a composition parameter x=0.20, replaced by two distinct changes in the slope of conductivity below room temperature.     

On the Urbach rule in sulphur-implanted Cu6PS5I superionic conductors

Cu₆PS₅I superionic crystals, grown using chemical vapour transport, were implanted by sulphur ions. The ion implantation effect on the phase transitions is studied by temperature isoabsorption investigation of the optical absorption edge. For the implanted crystals the optical absorption edge shape is studied in the temperature range 77-320 K, the parameters of exciton-phonon interaction, resulting in the Urbach behaviour of the optical absorption edge, are determined, the temperature dependences of the optical pseudogap and Urbach energy are obtained. The implantation effect on the ordering-disordering processes in Cu₆PS₅I superionic conductors is studied.     

Cation mobility in the Cu6PS5X (X=Cl,Br, I) argyrodites

The electrical conductivity of Cu₆PS₅Cl shows purely Arrhenius behavior throughout the temperature range 170–450 K with no evidence of the 241 K thermodynamic phase transition previously reported. Cu₆PS₅Br exhibits two changes in activation energy. The first, at 251 K, apparently coincides with a previously determined thermodynamic transition. The second, at 321 K, is likely associated with a conduction transformation from ionic to electronic. The conductivity of Cu₆PS₅I is characterized by a cusp at a temperature of 194 K, far removed from a previously reported thermodynamic transition at 221 K. In addition, a broad and continuous change in activation energy appears to coincide with another previously reported phase transition at 270 K.     

Electrical and optical absorption studies of Cu7GeS5I fast-ion conductor

Electrical conductivity and fundamental absorption spectra of monocrystalline Cu₇GeS₅I were measured in the temperature ranges 95-370 and 77-373 K, respectively. A rather high electrical conductivity (σ_t=6.98×10⁻³Ω⁻¹ cm⁻¹ at 300 K) and low activation energy (ΔE_a=0.183 eV) was found. The influence of different types of disordering on the Urbach absorption edge and electron-phonon interaction parameters were calculated, discussed and compared with the same parameters in Cu₇GeS₅I, Cu₆PX₅I (X=S,Se) and Ag₇GeX₅I (X=S,Se) compounds. We have concluded that the P→Ge and Cu→Ag cation substitution results in an increase of the electrical conductivity and a decrease of the activation energy. Besides, P→Ge substitution, results in complete smearing and disappearance of the exciton absorption bands and in blue shift of the Urbach absorption edge, an increase of the edge energy width and an electron-phonon-interaction enhancement.     

Crystal structure and dielectric properties of ordered perovskites Ba2BiSbO6 and BaSrBiSbO6

Neutron powder diffraction studies showed that the ordered perovskites Ba₂BiSbO₆ (BBS) and BaSrBiSbO₆ (BSBS) crystallize in a rhombohedral structure with the space group R3¯. The room-temperature lattice parameters are a=6.0351(2) Å; α=60.202(1)° and a=5.9809(2) Å; α=60.045(2)°, respectively. BBS exhibits a dielectric anomaly near room temperature which may be related to structural transition from the R3¯ to low-temperature monoclinic I2/m symmetry. BSBS shows a dielectric anomaly near 723 K which coincides with a phase transition from the rhombohedral to cubic (Fm3¯m) structure. In contrast to BBS, BSBS does not undergo structural transition below room temperature.     

Temperature variation of electrical conductivity and absorption edge in Cu7GeSe5I advanced superionic conductor

Single crystals of Cu₇GeSe₅I superionic conductor were grown by chemical transport. Their electrical conductivity in the frequency range 1.0×10⁶–1.2×10⁹ Hz and in the temperature range 196–295 K was measured. Cu₇GeSe₅I crystal is shown to exhibit a rather high electrical conductivity (σ₂₉₅=64.0 S/m at 295 K) and a low activation energy (ΔE_a=0.125 eV). Optical absorption edge of Cu₇GeSe₅I crystals in the temperature range 77–300 K was studied, the temperature dependences of the optical pseudogap and Urbach energy being obtained. The effect of different types of disordering on the Urbach absorption edge and electron–phonon interaction parameters was investigated.     

Internal friction in Cu6PS5Br superionic crystals and related composites

Mechanical properties of Cu₆PS₅Br single crystals and composites based on them have been investigated by the internal friction method. The measurements of the internal friction and the shear modulus have been performed in the temperature range of 80–300 K at deformation frequencies of 10–100 mHz in a mode of forced torsional vibrations. The maxima caused by the superionic and ferroelastic phase transitions have been found in temperature dependences of the internal friction. It has been shown that a more than two-fold decrease in the shear modulus with increasing temperature in the range of 150–230 K is caused by mobility unfreezing in the cation sublattice of the Cu₆PS₅Br single crystal during the superionic phase transition. An abrupt (more than threefold) increase in the shear modulus upon heating in the range of 260–270 K is caused by the ferroelastic phase transition of the Cu₆PS₅Br single crystal. Parameters of the internal friction of this single crystal in the course of mentioned phase transitions have been determined.     

Compositional behaviour of Urbach absorption edge and exciton-phonon interaction parameters in Cu6PS5I1−xBrx superionic mixed crystals

Temperature behaviour of optical absorption edge in Cu₆PS₅I_1−xBr_x mixed crystals is studied in the interval 77-325 K. It is shown that the absorption edge has Urbach shape in the 215-325 K temperature interval. The influence of temperature and compositional disorder on the Urbach absorption edge parameters is presented. The mechanism of the Urbach bundle formation and the effect of I→Br anionic substitution on the exciton-phonon interaction parameters is elucidated.     

Effect of annealing temperature on the decomposition of reactively sputtered Ag2Cu2O3 films

Ag₂Cu₂O₃ films were deposited on glass substrates by reactive sputtering of a composite silver-copper target. The deposited films were annealed in air at 100, 200 and 300 °C. The structure of the films was studied using X-ray diffraction (XRD), their surface morphology was characterised using scanning electron microscopy (SEM) and their electrical resistivity at room temperature was measured using the four point probe method. The 100 °C annealing did not modify either the film structure or the film morphology. On the other hand, Ag₂Cu₂O₃ films were partially decomposed into Ag and CuO after a 200 °C annealing. The decomposition was complete for a 300 °C annealing. The evolution of the film surface morphology as a function of the annealing temperature was discussed in connection to the evolution of the molar volume of the phases constituting the films.     

Dielectric relaxation in complex perovskite oxide BaCo1/2W1/2O3

Polycrystalline BaCo_1/2W_1/2O₃ (BCW) is prepared by the solid-state reaction technique. The X-ray diffraction study of the compound at room temperature reveals the monoclinic phase. The field dependence of the dielectric constant and the conductivity are measured in the frequency range from 50 Hz to1 MHz and in the temperature range from 300 to 413 K. An analysis of the real and imaginary parts of the dielectric permittivity with frequency is performed. The frequency-dependent maxima in the imaginary impedance are found to obey an Arrhenius law with an activation energy=0.86 eV. The frequency-dependent electrical data are also analysed in the framework of the conductivity and modulus formalisms.     

Structure and low-temperature properties of Ba8Ni6Ge40

Structural, magnetic, heat capacity, electrical and thermal transport properties are reported on polycrystalline Ba₈Ni₆Ge₄₀. Ba₈Ni₆Ge₄₀ crystallizes in a cubic type I clathrate structure with unit cell a=10.5179 (4) Å. It is diamagnetic with susceptibility χ_dia=−1.71×10^-6 emu/g Oe. An Einstein temperature 75 K and a Debye temperature 307 K are estimated from heat capacity data. It exhibits n-type conducting behavior below 300 K. It shows high Seebeck coefficients (−111×10^-6 V/K), low thermal conductivity (2.25 W/K m), and low electrical resistivity (8.8 mΩ cm) at 300 K.     

Molecular material—{N(n-C4H9)4[Ni(II)0.5 Fe(II)0.5 Fe(III)(C2O4)3]}∞: Magnetic, Mössbauer and electrical conductivity studies

We have attempted to characterize the magnetic and electrical properties of a new mixed-metal molecular material {NBu₄[Ni(II)_0.5Fe(II)_0.5Fe(III)(ox)₃]}_N synthesized by the use of trioxalatoferrate as the building block. Mössbauer spectroscopy was utilized in order to understand local spin structures in this compound. The results indicate that the compound is a semiconducting ferrimagnet with T_N=30 K and room temperature conductivity of 6×10⁻¹⁵ Ω⁻¹ cm⁻¹ along with 1.8 eV activation energy under dark. The compound has no appreciable electrical response towards illumination.     

Effects of crystallographic orientation on the oxygen exchange rate of La0.7Sr0.3MnO3 thin films

The oxygen surface exchange of La_0.7Sr_0.3MnO₃ (LSM) thin films was investigated using the electrical conductivity relaxation (ECR) method. Epitaxial (100)-, (110)-, and (111)-oriented LSM films were fabricated on corresponding SrTiO₃ (STO) substrates using pulsed laser deposition. The LSM films had well-controlled surface qualities, exhibited bulk-like steady-state electrical properties, and exhibited surface dominated responses in ECR. The chemical surface exchange coefficients (k_chem) were determined and varied from ≈ 1 × 10^− 6 to 65 × 10^− 6 cm/s, depending on temperature and orientation, with activation energies of between 0.8 and 1.2 eV. At 800 °C, a four fold variation is observed in the k_chem values, with (110)/(100) being the highest/lowest, explained well by the high activation energy for (110), ≈ 1.16 eV, and the low energy for (111) and (100), ≈0.83 eV.     

Conduction behaviour and thermoelectric power of Agx (As0.4Se0.6) 100−x chalcogenide system

Chalcogenide bulk alloys of Ag_x (As_0.4Se_0.6) _100−x (x=5, 7.5, 10, 12.5, 15 and 17.5) system were prepared by the conventional melt-quench technique. The d.c. electrical conductivity (σ) and thermoelectric power (TEP) measurements were carried out in the temperature range from 83 to 373 K and from 253 to 373 K, respectively. Variations of both σ and TEP with ambient temperature proved the p-type semiconducting behaviour of these materials. The current density-electric field characteristics were found to be linear. The activation energies, calculated from both the electrical conductivity E_σ and thermoelectric power E_s, were found to be dependent on composition.     

DC and AC conductivities of (As2S3)100−x(AsSe0.5Te0.5I)x chalcogenide glasses

The DC and AC conductivities of samples from the system (As₂S₃)_100−x(AsSe_0.5Te_0.5I)_x, where x=0, 5, 10, 15, 20, 25, 30, 35, 50, 70 and 90 mol%, were measured as a function of temperature. Besides, the AC conductivities of the samples with x=10 and 30 were measured as a function of frequency from room temperature to the glass transition temperature. The DC conductivity dependence on temperature is of the Arrhenius type, whereas the value of the pre-exponential factor suggests the electrical conduction by localized states in the band tails and by localized states near the Fermi level. The small values of the conduction activation energy (10⁻²-10⁻¹ eV) obtained at higher frequencies suggest that the conduction in these materials is due to hopping of charge carriers between close defect states near the Fermi level.     

Crystal structure,ionic conductivity and dielectric relaxation studies in the (C5H10N)2BiBr5 compound

The synthesis and crystal structure of the bis (3-dimethylammonium-1-propyne) pentabromobismuthate(III) salt are given in the present paper. After an X-ray investigation, it has been shown that the title compound crystallizes at 298 K in a centrosymmetric monoclinic system, in the space group C₂/c with the following lattice parameters a=12.9034(3) Å, b=19.4505(6) Å, c=8.5188(2) Å, β=102.449(2). Not only were the impedance spectroscopy measurements of (C₅H₁₀N)₂BiBr₅ carried out from 209 Hz to 5 MHz over the temperature range of 318 K–373 K, but also its ac conductivity evaluated. Besides, the dielectric relaxation was examined using the modulus formalism. Actually, the near values of activation energies obtained from the impedance and modulus spectra confirms that the transport is of an ion hopping mechanism, dominated by the motion of the H⁺ ions in the structure of the investigated material.     

Refractive index, oscillator parameters and temperature-tuned energy band gap of Tl4In3GaS8-layered single crystals

Transmission and reflection measurements in the wavelength region 450-1100 nm were carried out on Tl₄In₃GaS₈-layered single crystals. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.32 and 2.52 eV, respectively. The rate of change of the indirect band gap with temperature dE_gi/dT=-6.0×10⁻⁴ eV/K was determined from transmission measurements in the temperature range of 10-300 K. The absolute zero value of the band gap energy was obtained as E_gi(0)=2.44 eV. The dispersion of the refractive index is discussed in terms of the Wemple-DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.87 eV, 26.77 eV, 8.48×10¹³ m⁻² and 2.55, respectively.     

Magnetic characterization of Mn5SiB2 and Mn5Si3 phases

In this work the Mn₅Si₃ and Mn₅SiB₂ phases were produced via arc melting and heat treatment at 1000 °C for 50 h under argon. A detailed microstructure characterization indicated the formation of single-phase Mn₅Si₃ and near single-phase Mn₅SiB₂ microstructures. The magnetic behavior of the Mn₅Si₃ phase was investigated and the results are in agreement with previous data from the literature, which indicates the existence of two anti-ferromagnetic structures for temperatures below 98 K. The Mn₅SiB₂ phase shows a ferromagnetic behavior presenting a saturation magnetization M_s of about 5.35×10⁵ A/m (0.67 T) at room temperature and an estimated Curie temperature between 470 and 490 K. In addition, AC susceptibility data indicates no evidence of any other magnetic ordering in 4-300 K temperature range. The magnetization values are smaller than that calculated using the magnetic moment from previous literature NMR results. This result suggests a probable ferrimagnetic arrangement of the Mn moments.