Temperature dependence of effective thermal conductivity and effective thermal diffusivity of Se90In10 bulk chalcogenide glass

Measurement of effective thermal conductivity (λ_e) and effective thermal diffusivity (χ_e) of twin pellets of Se₉₀In₁₀ bulk chalcogenide glass has been carried out in the temperature range from 303 to 323 K and cooling from 323 to 303 K using transient plane source (TPS) technique. In the heating process variation of effective thermal conductivity (λ_e) and effective thermal diffusivity (χ_e) is observed. Both quantities are found to be maximum at 313 K, which lies in the vicinity of glass transition temperature (T_g). During the cooling process λ_e and χ_e remain same at all temperatures. Such type of behavior shows thermal hysteresis in this sample, which can be explained on the basis of structural change of the Se₉₀In₁₀ bulk chalcogenide glass.     

Thermal conductivity of La0.67(CaxSr1−x)0.33MnO3 (x=0, 0.5, 1) and La0.6Y0.07Ca0.33MnO3 pellets between 10 and 300 K

Thermal conductivity (λ) of nanocrystalline La_0.67(Ca_xSr_1−x)_0.33MnO₃ (x=0, 0.5, 1) and La_0.6Y_0.07Ca_0.33MnO₃ pellets prepared by a novel ‘pyrophoric’ method have been studied between the temperature range 10 and 300 K. Our data show that the magnitude of thermal conductivity is strongly influenced by the ion substitutions at La-site. The analysis of the thermal conductivity data indicates that the thermal transport is governed largely by phonons scattering in these systems and the electronic contribution is as small as 0.2-1% of total thermal conductivity (λ_total). At low temperatures (<90 K) 2D like lattice defects contribute to the phonon scattering dominantly and its strength increases with increasing Sr content and also with partial substitution of La by Y. Depending upon the composition of the samples, the magnon thermal conductivity contributes 2-15% of λ_total close to T_C. In the paramagnetic regime the unusual increase in λ_total keeps signature of large dynamic lattice distortion.     

Influence of indium content on the optical, electrical and crystallization kinetics of Se100−xInxthin films deposited by flash evaporation technique

Thin films of Se _100−xIn_x (x=10, 20 and 30 at%) have been prepared by the flash evaporation technique. The effect of the indium content on optical band gap of the Se_100−x In_x films has been investigated by the optical characterization. The optical band gap values of the Se_100−x In_x thin films were determined and are found to decrease with increasing indium content. This indium content changes the width of localized states in the optical band gaps of the thin films. It was found that the optical band gap, E_g, of the Se_100−x In_x films changes from 1.78 to 1.37 eV with increasing indium content from 10 to 30 at%, while the width of localized states in optical band gap changes from 375 to 342 meV. The temperature dependence of the dark electrical conductivity were studied in the temperature range 303-433 K and revealed two activation energies providing two electrical conduction mechanisms. The activation energy of the Se_100−x In_x films in the high temperature region changes from 0.49 to 0.32 eV with increasing indium content from 10 to 30 at%, while the hopping activation energy in the lower temperature region changes from 0.17 to 0.22 meV. The change in the electrical conductivity with time during the amorphous-to-crystalline transformation is recorded for amorphous Se_100−xIn_x films at two points of isothermal temperatures 370 and 400 K. The formal crystallization theory of Avrami has been used to calculate the kinetic parameters of crystallization.     

Electrical resistivity and thermal conductivity of UP1−xSx

UP, US, and their solid solutions of several compositions were prepared, and the electrical resistivities of these samples were measured from liquid nitrogen temperature to 1000 K and the thermal diffusivities from 300 to 1000 K. It was shown that the resistivity of UP_1?xS_x at the paramagnetic region arose mainly from the scattering of conduction electrons by disordered spins localized at uranium ion sites. The resistivity of UP_0.4S_0.6 showed another anomaly below the transition temperature. A gentle hump of the thermal diffusivity of UP was observed at about 650 K. This was concluded to be due to the anomalous negative temperature coefficient of electrical resistivity observed above the Néel temperature up to about 550 K. The composition dependence of thermal conductivity of UP_1?xS_x was compared with that of UC_1?xN_x by separating the total conductivity into electronic and phonon contributions.     

Electric, thermoelectrical and photoelectric properties of CuGaxIn1−xSe2 thin films

The electrical conductivity σ, Hall effect R_H, and thermoelectric power Q of CuGa_0.25In_0.75Se₂ thin films with different growth conditions have been measured at temperature 300-520 K. These properties were also measured at room temperature for different composition of CuGa_xIn_1−xSe₂ (0.75≥x≥0) deposited at the same evaporation conditions. All investigated films are p-type over the whole temperature range. Electrical conduction was studied in order to establish its mechanism.The room temperature photoelectric response of those films were measured as a function of wavelength (2.5≥λ≥0.3) μm. It is found that the energy gap values follow a second order equation in x giving a downward bowing parameter of about 0.31 eV.     

Room temperature growth of InxGa1−xN thin films by mixed source modified activated reactive evaporation

Polycrystalline In_xGa_1−xN thin films were prepared by mixed source modified activated reactive evaporation (MARE) technique. The films were deposited at room temperature on glass substrates without any buffer layer. All the films crystallize in the hexagonal wurtzite structure. The indium concentration calculated from XRD peak shift using Vegard's law was found to be varying from 2% to 92%. The band gap varies from 1.72 eV to 3.2 eV for different indium compositions. The indium rich films have higher refractive indices as compared to the gallium rich films. The near infra-red absorption decreases with gallium incorporation into InN lattice which is mainly due to decrease in the free carrier concentration in the alloy system. This fact is further supported from Hall effect measurements. MARE turns out to be a promising technique to grow In_xGa_1−xN films over the entire composition range at room temperature.     

Thermal transport in chemically doped polyaniline materials

Simultaneous measurements of effective thermal conductivity (λ_e) and effective thermal diffusivity (χ_e) of four samples S1 (polyaniline mixed with 100% Ni), S2 (polyaniline mixed with 90% Ni and 10% Al), S3 (polyaniline mixed with 80% Ni and 20% Al) and S4 (polyaniline mixed with 70% Ni and 30% Al) of polyaniline mix with metal Ni and Al in different percentage have been made using transient plane source technique. In the temperature range from room temperature to 170 °C. Both λ_e and χ_e increase with increase in temperature. Addition of aluminium concentration at the cost of nickel in the composite increases the value of λ_e and χ_e over the entire range of temperature under investigation. It has been found that the values of λ_e and χ_e are maximum when 70% of Ni and 30% of Al are mixed in polyaniline matrix. This behaviour is also predicted by an empirical relation, which is obtained from polynomial fit of the experimental data and is explained on the basis of bond formation between metal (Ni and Al) and nitrogen of polyaniline matrix.     

Structural, magnetic properties and magnetostriction studies of Sm1−xNdxFe1.55 alloys

Structural, magnetic properties and magnetostriction studies of Sm_1−xNd_xFe_1.55 (0≤x≤0.56) alloys have been performed. X-ray diffraction analysis confirms the presence of single cubic Laves phase in Sm_1-xNd_xFe_1.55 alloys with 0≤x≤0.48. The lattice parameter of alloys increases linearly with increase in Nd content while the Curie temperature behaves in the opposite way. The alloy x=0.08 exhibits a giant magnetostriction value (λ_∥-λ_⊥) of −2187 ppm at a magnetic field of 12 kOe due to the anisotropy compensation between Sm³⁺ and Nd³⁺ ions.     

High-temperature electrical properties of magnesiowustite Mg1 − xFexO and spinel Fe3 − x − yMgxCryO4 ceramics

Phase relationships, thermal expansion and electrical properties of Mg_1 − xFe_xO (x = 0.1-0.45) cubic solid solutions and Fe_{3 − x − y}Mg_xCr_yO_4 ± δ (x = 0.7-0.95; y = 0 or 0.5) spinels were studied at 300-1770 K in the oxygen partial pressure range from 10 Pa to 21 kPa. Increasing iron content enlarges the spinel phase stability domain at reduced oxygen pressures and elevated temperatures. The total conductivity of the spinel ceramics is predominantly n-type electronic and is essentially p(O₂)-independent within the stability domain. The computer simulations using molecular dynamics technique confirmed that overall level of ion diffusion remains low even at high temperatures close to the melting point. Temperature dependencies of the total conductivity in air exhibit a complex behavior associated with changing the dominant defect-chemistry mechanism from prevailing formation of the interstitial cations above 1370-1470 K to the generation of cation vacancies at lower temperatures, and with kinetically frozen cation redistribution in spinel lattice below 700-800 K. The average thermal expansion coefficients of the spinel ceramics calculated from dilatometric data in air vary in the range (9.6-10.0) × 10^− 6 K^− 1 at 300-500 K and (13.2-16.1) × 10^− 6 K^− 1 at 1050-1370 K. Mg_1 − xFe_xO solid solutions undergo partial decomposition on heating under oxidizing and mildly reducing conditions, resulting in the segregation of spinel phase and conductivity decrease.     

Phase and electrical behaviour in the Bi14W1 − xLaxO24 − 3x/2 system

The compositional and thermal dependencies of phase and electrical behaviour of compositions in the system Bi₁₄W_1 − xLa_xO_{24 − 3x/2} (0.00 < x < 1.00) have been studied by X-ray powder diffraction, differential thermal analysis and a.c. impedance spectroscopy. The system exhibits polymorphism and phase separation, which shows both compositional and thermal dependence. Compositions with x = 0.25 and x = 0.50 exhibit a single phase tetragonal structure at room temperature. In contrast, the x = 0.75 composition at room temperature shows a mixture of a cubic phase and a secondary β-Bi₂O₃ related tetragonal phase. A full solid solution is observed at high temperatures, corresponding to the occurrence of a δ-Bi₂O₃ type phase. The appearance of the various phases correlates well with the observed electrical behaviour. The x = 0.75 composition exhibits exceptionally high conductivity at high temperatures (σ₈₀₀ = 1.34 S cm^− 1), but also shows significant phase separation at lower temperatures.     

A survey on the effect of vanadium content on the magnetoelastic properties of YFe12−xVx alloys

Experimental results on the thermal expansion and magnetostriction of YFe_12−xV_x (1.5≤x≤3.5) alloys are reported. The results show that the anisotropic magnetostriction (Δλ) at a finite field (1.5 T) increases with increasing vanadium content in the range of x<2. But for x>2, a decrease in the magnetic anisotropy with increasing vanadium content causes a decrease in the saturation values of Δλ. In addition, the thermal expansion coefficient becomes a minimum for x≈2. Experimental curves exhibit that the forced volume magnetostriction (ΔV/V) is positive and increases linearly with the applied field at high fields. But in the low field region (≤0.5 T), a minimum appears in the isothermal curves of ΔV/V around the saturation field. The results are explained by considering the influence of vanadium content on the magnetization anisotropy of YFe_12−xV_x compounds.     

A study on magnetoelastic properties of Tb3 (Fe28−xCox) V1.0 (x=0, 3, 6) compounds

In this work, The magnetoelastic properties of polycrystalline samples of Tb₃ (Fe_28−xCo_x) V_1.0 (x=0, 3, 6) intermetallic compounds are investigated by means of linear thermal expansion and magnetostriction measurements in the temperature range of 77–515 K under applied magnetic fields up to 1.5 T. The linear thermal expansion increases with the Co content. The well-defined anomalies observed in the linear thermal expansion coefficients for Tb₃ (Fe_28−xCo_x) V_1.0 (x=0, 3, 6) compounds are associated with the magnetic ordering temperature for x=0 and spin reorientation temperatures for x=3, 6. Below transition temperatures, the value of the longitudinal magnetostriction (λ_Pa) at 1.6 T increases with Co content.     

Thermal diffusivities and molar volumes of ternary Al20 AsxTe80−x alloy glasses: evidence of self-organization

Thermal diffusivities (α) and molar volumes (V_m) of bulk Al₂₀As_xTe_80−x alloy glasses in the composition range 0≤x≤35 are examined. The results reveal a broad maximum in alpha and a broad minimum in V_m in the 15<x<25 range. Earlier temperature modulated differential scanning calorimetric measurements on these glasses have revealed the non-reversing heat flow to show a global minimum (reversibility window) in the same composition range. Taken together these results suggest that present glasses in the 15<x<25 range are self-organized. The thermal diffusivity maximum observed near x=20 is consistent with a minimal scattering of thermal waves in the homogeneous and stress-free glass composition residing in the center of the self-organized phase.     

Conduction mechanism and the dielectric relaxation process of a-Se75Te25−xGax (x=0, 5, 10 and 15 at wt%) chalcogenide glasses

Se₇₅Te_25−xGa_x (x=0, 5, 10 and 15 at wt%) chalcogenide compositions were prepared by the well known melt quenching technique. Thin films with different thicknesses in the range (185–630 nm) of the obtained compositions were deposited by thermal evaporation technique. X-ray diffraction patterns indicate that the amorphous nature of the obtained films. The ac conductivity and the dielectric properties of the studied films have been investigated in the frequency range (10²–10⁵ Hz) and in the temperature range (293–333 K). The ac conductivity was found to obey the power low ω^s where s≤1 independent of film thickness. The temperature dependence of both ac conductivity and the exponent s can be well interpreted by the correlated barrier hopping (CBH) model. The experimental results of the dielectric constant ε₁ and dielectric loss ε₂ are frequency and temperature dependent. The maximum barrier height W_m calculated from the results of the dielectric loss according to the Guintini equation, and agrees with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott for chalcogenide glasses. The density of localized state was estimated for the studied film compositions. The variation of the studied properties with Ga content was also investigated. The correlation between the ac conduction and the dielectric properties were verified.     

Effect of La substitution on conductivity and dielectric properties of Bi1−xLaxFeO3 ceramics: An impedance spectroscopy analysis

Bismuth ferrite (BFO) and La-substituted BFO with composition Bi_1−xLa_xFeO₃ (x=0.05, 0.1 and 0.15) (BLFO_x=0.05-0.15) ceramics were prepared using the solid state reaction route. A structural phase transition from rhombohedral phase to triclinic phase was observed for BLFO_x=0.05-0.15 ceramics. Modulus spectroscopy reveals the deviation of dielectric behavior from ideal Debye characteristics and the dependence of conductivity on ion hopping in BFO and BLFO_x=0.05-0.15 ceramics. The conductivity of the BFO ceramics decreases for La content of 5 mol%, followed by a subsequent increase with 10 and 15 mol% of lanthanum doping. The typical values of the activation energies at high temperature reveal the contribution of short range movement of doubly ionized oxygen vacancies to the conduction process in BFO and BLFO_x=0.05 ceramics. Both short range and long range motion of oxygen vacancies are responsible for large conductivity in BLFO_{x=0.1 and 0.15} ceramics.     

Low-temperature thermal conductivity of GexAs40−xS60 glasses

Thermal conductivity, k, of Ge_xAs_40−xS₆₀ glasses has been measured between 4.5 and 300 K. A variation of k with the composition is found and dependences of its parameters on the mean coordination numbers are established. Analyses have been made within but also independently of the soft-potential model. Some correlations and scaling laws are proposed.     

Thermal conductivity of UC1 − xNx from 100 to 1000 °K

The thermal diffusivities of UC_{1 ? x}N_x of several compositions were measured from 100 to 1000 °K by a laser flash method. The thermal conductivity was separated into electronic and phonon components by assuming the constant Lorenz number. The phonon conductivity showed an anomalous behaviour against composition at low temperatures. The total thermal conductivity of UC_{1 ? x}N_x showed a minimum above 300 °K at an intermediate composition which moved to higher carbon content with increasing temperature. This behaviour was explained by the temperature dependence of the lattice and electronic components.     

Microstructure and nanohardness of the diluted magnetic semiconducting Cd1−xMnxS nano-crystalline films

Cd_1−xMn_xS nano-crystalline films (0 ≤ x ≤ 0.5) were formed on glass substrates by thermal evaporation technique at room temperature (300 K). AFM studies showed that all the films were in nano-crystalline form with the grain size varying in the range between 36 and 58 nm and exhibited hexagonal structure of the host material. The lattice parameters varied linearly with composition, following Vegard's law in the entire composition range. The nanohardness and Young's modulus decreased sharply with ‘Mn’ content upto x = 0.3 and increased with high Mn content.     

Synthesis, characterization and electromagnetic properties of Fe1−xCox alloy flower-like microparticles

Fe_1−xCo_x alloy microparticles with size 3-5 μm and novel flower-like shapes were prepared by a simple low temperature reduction method. The electromagnetic properties for the paraffin matrix composites containing Fe_1−xCo_x alloy microparticles were measured using a vector network analyzer in the 2-18 GHz frequency range. As a consequence of large surface- and shape-anisotropy energy for the flower-like shaped 3D microstructures, the strong natural resonance around 8-12 GHz and remarkable dielectric relaxation were observed in the complex permittivity and permeability spectrum, which are dominant in the enhanced electromagnetic wave absorption (EMA) performance. It was found that both the electromagnetic parameters of complex permittivity and permeability and the intensity and location of absorption band were remarkably dependent on the Co/Fe molar ratio. The enhanced EMA performance was obtained in these Fe_1−xCo_x-paraffin (x=0.4, 0.5, and 0.6) composites system. For the Fe_0.5Co_0.5 alloy, the reflection loss (RL) exceeding −20 dB was obtained in the broad frequency range of 5.4-18 GHz with a thin sample thickness of between 1.0 and 2.9 mm. In particular, an optimal RL of −59 dB was obtained at 3.61 GHz with a thin thickness of 3.6 mm for the Fe_0.4Co_0.6 sample. The Fe_1−xCo_x alloy microparticles may be attractive candidates for applications of microwave absorption materials with a wide frequency range and strong absorption in the high frequency region.     

Low-temperature thermoelectric properties of Bi85Sb15−xNbx alloys prepared by high-press sintering

The nanocrystalline materials with the general formula Bi₈₅Sb_15−xNb_x (x=0, 0.5, 1, 2, 3) were prepared by mechanical alloying and subsequent high-pressure sintering. Their transport properties involving electrical conductivity, Seebeck coefficient and thermal conductivity have been investigated in the temperature range of 80-300 K. The absolute value of Seebeck coefficient of Bi₈₅Sb₁₃Nb₂ reaches a maximum of 161 μV/K at 105 K, which is 69% larger than that of Bi₈₅Sb₁₅ at the same temperature. The power factor and figure-of-merit are 4.45×10⁻³ WK⁻²m⁻¹ at 220 K and 1.79×10⁻³ K⁻¹ at 196 K, respectively. These results suggest that thermoelectric properties of Bi₈₅Sb₁₅ based material can be improved by Nb doping.