Mn clusterisation in Ga1−xMnxN

The local structure of Mn atoms in Ga_1?xMn_xN has been investigated by the Mn L₃ edge x-ray absorption spectrum (XAS) at total electron yield mode, which preferentially looks at atoms near the surface. A modeling defects configuration, Mn₅ micro-clusters complexed with substitutional Mn_Ga and interstitial Mn_I is found for a higher Mn doping concentration. This new configuration is also confirmed by the total energy calculations.     

MnxGe1－x稀磁半导体薄膜的结构研究

利用X 射线衍射(XRD)和X射线吸收精细结构(XAFS)方法研究了磁控共溅射方法制备的Mn_xGe_1-x薄膜样品的结构随掺杂磁性原子Mn含量的变化规律.XRD结果表明，在Mn的含量较低(7.0%)的Mn_0.07Ge_0.93样品中，只能观察到对应于多晶Ge的XRD衍射峰，而对Mn含量较高(25.0%, 36.0%)的Mn_0.25Ge_0.75和Mn关键词： 磁控溅射 XRD XAFS xGe_1-x稀磁半导体薄膜')" href="#">Mn_xGe_1-x稀磁半导体薄膜     

Local structure and magnetic properties of Mn substituted manganites studied by EXAFS and Dc magnetic measurements

We report extended X-ray absorption fine structure (EXAFS) measurements at the Mn K edge and magnetic measurements performed on (La_1−xCa_x)(Mn_1−yM_y)O₃ samples (M=Cr or Ni; x=0.37 and 0.75 and y=0.03 or 0.08). The Mn substitution produces important effects on both the sides of the LaMnO₃-CaMnO₃ phase diagram. For x<0.5 the ferromagnetic-metallic phase maintains its main character even after Mn substitution, but both the doping species (Ni or Cr) lower T_C and broaden the magnetic transition, and the EXAFS study evidences two Mn-O distances, suggesting the presence of zones of distorted insulating phase. For x>0.5, after the doping with Cr, the charge ordered phase persists but on a shorter scale, whereas the Jahn-Teller distortion is weakened as indicated by EXAFS measurements, and the formation of ferromagnetic clusters is evidenced by magnetic measurements.EXAFS and magnetic measurements are in mutual agreement, thus confirming the correlation between the local disorder determined by charge localization and magnetic degrees of freedom.     

The important role of Mn in the room-temperature ferromagnetism of Mn-doped GaN films

Mn-doped GaN films (Ga_1−xMn_xN) were grown on sapphire (0 0 0 1) using Laser assisted Molecular Beam Epitaxy (LMBE). High-quality nanocrystalline Ga_1−xMn_xN films with different Mn concentration were then obtained by thermal annealing treatment for 30 min in the ammonia atmosphere. Mn ions were incorporated into the wurtzite structure of the host lattice by substituting the Ga sites with Mn³⁺ due to the thermal treatment. Mn³⁺, which is confirmed by XPS analysis, is believed to be the decisive factor in the origin of room-temperature ferromagnetism. The better room-temperature ferromagnetism is given with the higher Mn³⁺ concentration. The bound magnetic polarons (BMP) theory can be used to prove our room-temperature ferromagnetic properties. The film with the maximum concentration of Mn³⁺ presents strongest ferromagnetic signal at annealing temperature 950 °C. Higher annealing temperature (such as 1150 °C) is not proper because of the second phase Mn_xGa_y formation.     

Local atomic structures in Zr-Ni metallic glasses

Local atomic structures of Zr100−xNix (x=33.3, 36, 50 at%) binary metallic glasses were investigated by means of extended X-ray absorption fine structure (EXAFS) probe. Structural parameters show that the Zr-Ni bond length, RZr-Ni, keeps a constant value of 2.62 Å, regardless of alloy compositions. This result implies that there is a strongly chemical interaction between Zr and Ni atoms, leading to significant chemical short-range orders (CSROs) in the present metallic glasses. Further analysis indicates that the SRO structures in these metallic glasses are extremely similar with those in their crystalline counterparts. It is interesting to note that the CSROs in the eutectic Zr₆₄Ni₃₆ metallic glass consist of Zr₂Ni-like and ZrNi-like CSROs.     

Pre-edge features in X-ray absorption structure of Mn in GaMnN,GaMnAs and GeMn

_Ga1-xMnxN${\mathrm{Ga}}_{1-x}{\mathrm{Mn}}_x\mathrm{N}$ samples with a wide range of concentrations, from x=0.003$x=0.003$ to 0.057, were grown by molecular beam epitaxy. X-ray diffraction and the simulation of the extended X-ray absorption fine structure (EXAFS) confirmed the wurtzite structure of the samples, without any secondary phase, and the location of Mn in the gallium sublattice of GaN. The valence state of Mn was studied using the X-ray absorption near-edge structure (XANES) at the K-edge of Mn. The shape of the measured XANES spectra does not depend on the Mn concentration: that implies the same valence state and local atomic structure around the Mn atom in all samples. A calculation of the electronic band structure of GaMnN, GaMnAs, GeMn and the XANES spectra of Mn in GaMnN was performed using the linearized augmented plane wave (LAPW) method. The calculated spectra fit well our experimental data. In particular, the comparison demonstrates that a peak in the pre-edge structure is directly related to the 3+$3+$ valence state of Mn. This was confirmed experimentally by measurements of the Mn K-edge in GaMn²⁺As${\mathrm{GaMn}}^{2+}\mathrm{As}$ and ZnMn²⁺Te${\mathrm{ZnMn}}^{2+}\mathrm{Te}$. An application of proposed interpretation for GeMn is discussed.     

Optical and magnetic properties of (Ga1−xMnx)N/GaN digital ferromagnetic heterostructures

(Ga_1−xMn_x)N/GaN digital ferromagnetic heterostructures (DFHs) and (Ga_1−xMn_x)N/GaN grown on GaN buffer layers by using molecular beam epitaxy have been investigated. The photoluminescence (PL) spectra showed band-edge exciton transitions. They also showed peaks corresponding to the neutral donor-bound exciton and the exciton transitions between the conduction band and the Mn acceptor, indicative of the Mn atoms acting as substitution. The magnetization curves as functions of the magnetic field at 5 K indicated that the saturation magnetic moment in the (Ga_1−xMn_x)N/GaN DFHs decreased with increasing Mn mole fraction and that the saturation magnetic moment and the coercive field in the (Ga_1−xMn_x)N/GaN DFHs were much larger than those in (Ga_1−xMn_x)N thin films. These results indicate that the (Ga_1−xMn_x)N/GaN DFHs hold promise for potential applications in spintronic devices.     

Local surrounding of Mn in LaMn1−xCoxO3 compounds by means of EXAFS on Mn–K

A systematic study of LaMn_1?xCo_xO₃ perovskite series by means of X-ray absorption spectroscopy in the extended X-ray absorption fine structure (EXAFS) range of the K-absorption edge of Mn is reported. The Mn–K edge absorption measurements in the EXAFS region were performed to study the local surrounding of Mn ions. Polycrystalline powder samples of LaMn_1?xCo_xO₃ (x=0, 0.02; 0.2; 0.4; 0.5; 0.6; 0.8) prepared by solid-state reaction were used. The EXAFS spectra were analyzed with the FEFF8 computer program. The Mn–O distances of Mn to the nearest oxygen surroundings were evaluated for the samples in the series and compared with the Co–O distances obtained by EXAFS in V. Procházka et al., JMMM 310 (2007) 197 and with results of X-ray powder diffraction in C. Autret, J. Phys. Condens. Matter 17 (2005) 1601.     

Mn掺杂SiC磁性薄膜的结构表征

利用反射式高能电子衍射(RHEED)、X射线衍射(XRD)和X射线吸收近边结构谱(XANES)等技术研究了在950 ℃条件下Si(111)衬底上共蒸发分子束外延方法制备的Mn掺杂SiC磁性薄膜的结构特征.RHEED结果表明,生长的Mn掺杂SiC薄膜为立方结构.XRD和XANES结果表明,在Mn掺杂量为0.5％和18%的样品中,Mn原子均是与SiC半导体介质中的Si原子反应生成镶嵌在SiC基体中的Mn₄Si₇化合物颗粒,并未观察到在SiC晶格中有替代式或间隙式的M     

Local environment and oxidation state of a Mn impurity in SrTiO3 determined from XAFS data

The local environment and oxidation state of a Mn impurity in strontium titanate doped with 3% Mn were studied by X-ray absorption fine structure spectroscopy. The effect of the synthesis conditions on the incorporation of the impurity into A and B sites was studied. It was established that Mn ions substituting for Ti are in the Mn⁴⁺ oxidation state and are on-center. Mn ions substituting for Sr are in the Mn²⁺ oxidation state and off-center, and are displaced from the lattice site by 0.32 Å absorption near the edge structure can be used to determine the ratio of Mn atoms incorporated into A and B sites in the lattice.     

Effect of electron-beam irradiation on the magnetic properties of Ga1−xMnxAs thin films grown on GaAs (100) substrates

The effect of electron-beam irradiation on the magnetic properties of (Ga_1−xMn_x)As thin films grown on GaAs (100) substrates by using molecular beam epitaxy was investigated. The ferromagnetic transition temperature (T_c) of the annealed (Ga_0.933Mn_0.067)As thin films was 160 K. The T_c value for the as-grown (Ga_0.933Mn_0.067)As thin films drastically decreased with increasing electron-beam current. This significant decrease in the T_c value due to electron-beam irradiation originated from the transformation of Mn substituted atoms, which contributed to the ferromagnetism, into Mn interstitials or Mn-related clusters. These results indicate that the magnetic properties of (Ga_1−xMn_x)As thin films grown on GaAs (100) substrates are significantly affected by electron-beam irradiation.     

Synthesis and magnetic properties of Mn doped ZnO nanowires

Mn doped ZnO nanowires have been synthesized using a simple autocombustion method. The as-synthesized Mn doped ZnO nanowires were characterized by X-ray diffraction and transmission electron microscopy. An increase in the hexagonal lattice parameters of ZnO is observed on increasing the Mn concentration. Optical absorption studies show an increment in the band gap with increasing Mn content, and also give evidence for the presence of Mn²⁺ ions in tetrahedral sites. All Zn_1−xMn_xO (0≤x≤0.25) samples are paramagnetic at room temperature. However, a large increase in the magnetization is observed below 50 K. This behavior, along with the negative value of the Weiss constant obtained from the linear fit to the susceptibility data below room temperature, indicate ferrimagnetic behavior. The origin of ferrimagnetism is likely to be either the intrinsic characteristics of the Mn doped samples, or due to some spinel-type impurity phases present in the samples that could not be detected.     

Tetrahedral versus octahedral Mn site coordination in wurtzite and rocksalt Zn1−xMnxO investigated by means of XAS experiments under high pressure

We present the results of x-ray absorption measurements carried out in Zn_1−xMn_xO thin films under high pressure. The Mn environment remains essentially the same for nominal Mn concentrations given by x=0.05, 0.1, 0.15 and 0.25. Both the XANES (X-ray Absorption Near Edge Structure) and EXAFS (Extended X-ray Absorption Fine Structure) indicate that Mn occupies the Zn site, being surrounded by four oxygen atoms at 2.02±0.01 Å. The substitutional hypothesis is reinforced by comparing the differences between the ambient (wurtzite) and high pressure (rocksalt) spectra, which correspond to tetrahedral and octahedral Mn environments.     

Analysis of oxygen shell splitting in hydrothermally grown single crystal ThO2(200)

Single crystals of ThO₂ have been synthesized using hydrothermal growth and studied using the X‐ray absorption fine structure (XAFS) technique. The extended X‐ray absorption fine structure (EXAFS) has been extracted from the XAFS and analyzed using a novel, computational Latin hypercube sampling method. The methodology not only confirms the expected space group and crystal structure, it also identifies the origin of a previously reported split O shell. Since EXAFS is a local order analysis technique, the O shell splitting is identified as an O atom occupying an interstitial site. This result is significant for examining O^2– transport in a ThO₂ matrix and corroborating research indicating partial Th 5f occupancy that is similar to hyper‐stoichiometric UO_2+x compounds. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Local structure of uncapped and capped InGaN/GaN quantum dots

The local structure around the indium atoms in uncapped and capped In_xGa_1?xN quantum dots has been studied by In K‐edge extended X‐ray absorption fine structure (EXAFS) spectroscopy. The samples were grown by metal organic vapour phase epitaxy. The EXAFS was successfully applied to study the structural properties of buried quantum dots which are not optically active. The analysis revealed that capping the quantum dots with GaN does not affect the bond distances of the In—N and In—Ga, but makes the In—In distance shorter by 0.04 Å.     

Resonant photoemission in DyNi2Mn x rare-earth intermetallides

The electronic structure of the DyNi₂Mn _x rare-earth (RE) intermetallides whose cubic structure is similar to the structure of RT₂ compounds is studied. Resonant photoemission and X-ray absorption methods are used in the vicinity of the 2p- and 3p-excitation thresholds of transition elements and the 3p-, 3d-, and 4d-thresholds of RE metals to find the Ni, Mn 3d-, and R 4f-partial densities of the states in the valent band. The use of resonant photoemission allows us to establish features of the interaction between the unfinished 4f-shells of ions of RE metals with ions of the transition 3d-elements in RNi₂Mn _x compounds. The contributions from atoms of various elements to the structure of the valent band are separated, and the basic regularities of band formation during the introduction of manganese atoms are found.     

Chemical short-range order in Zr2Ni amorphous alloy

Extended X-ray absorption fine structure (EXAFS) and molecular dynamic (MD) simulation were used to study the short-range order in Zr₂Ni amorphous alloy. It is found that the bond length is significantly shorter for unlike atoms but longer for like atoms in amorphous state than that in the crystalline state. Meanwhile, the coordination number of Ni atom in amorphous structure is only half of that in ideal Zr₂Ni crystalline. Based on these results, we proposed that there exists Zr₂Ni-like chemical short-range order in the Zr₂Ni amorphous alloy.     

Direct evidence for off-centering of Mn impurity in SrTiO<Subscript>3</Subscript>

Mn-doped SrTiO₃ samples (3% Mn) with different deviations from stoichiometry have been investigated using XAFS spectroscopy. It was shown the under various preparation conditions manganese atoms can sub-stitute A and B sites of the perovskite structure and are in them in different charge states. Impurity Mn⁴⁺ ions that substitute Ti sites occupy on-center position in the lattice, whereas Mn²⁺ ions that substitute Sr sites are off-center and are displaced from the lattice sites by a distance of 0.32Å.     

Extended X-ray-absorption fine structure of mixed-coordination systems

An analysis method of the extended x-ray absorption fine structure (EXAFS) for mixed-coordination systems (MCS) is provided to determine structure parameters of the same type of atoms located at different coordination sites and proportion of them. It's demonstrated that if the effects of different sites on EXAFS amplitudes are ignored, the coordination numbers gotten from EXAFS analyzing must be wrong mostly. The method has been well tested by analyzing a known structure Gd₃Ga₅O₁₂ (GGG) crystal in which the Ga atoms have two different coordination sites. Li₂O-ZnO-GeO₂ glass system is also analyzed by means of the EXAFS method for MCS. Two different coordination sites for Ge atoms in the glasses. are found and the occupancies of them and the structure parameters are determined.     

MnxSi1-x磁性薄膜的结构研究

利用X射线衍射(XRD)和X射线吸收近边结构(XANES)方法研究了在Si(100)衬底上及600℃温度条件下用分子束外延(MBE)共蒸发方法生长的Mn_xSi_1-x磁性薄膜的结构.由XRD结果表明,只有在高Mn含量(8％和17％)样品中存在着Mn₄Si₇化合物物相.而XANES结果则显示,对于Mn浓度在0.7%到17%之间的Mn_xSi_1-x样品,其Mn原子的XANES谱表现出了一致的谱线特征.基于多重散射的XANES理论计算进一步表明,只有根据Mn₄Si₇模型计算出的理论XANES谱才能够很好的重构出Mn_xSi_1-x样品的实验XANES谱.这些研究结果说明在Mn_xSi_1-x样品中,Mn原子主要是以镶嵌式的Mn₄Si₇化合物纳米晶颗粒存在于Si薄膜介质中,几乎不存在间隙位和替代位的Mn原子. 关键词： xSi_1-x磁性薄膜')" href="#">Mn_xSi_1-x磁性薄膜 分子束外延 XRD XANES