A terbium (III) complex with triphenylamine-functionalized ligand for organic electroluminescent device

A novel ligand, 4-diphenylamino-benzoic acid (HDPAB), and the corresponding Tb (III) complex, Tb (DPAB)₃ which can be dissolved easily in organic solvents were synthesized and characterized. Organic electroluminescent (EL) device with a structure of indium tin oxide (ITO)/poly(N-vinylcarbazole) (PVK): Tb (DPAB)₃ (50 wt%, 80 nm)/1,3,5-tris-(N-phenylbenzimidazol-2-yl)benzene (TPBI) (30 nm)/tri(8-hydroxyquinoline)aluminum (AlQ) (20 nm)/LiF (1 nm)/Al (150 nm) in which Tb (DPAB)₃ acted as an emitter were fabricated. The maximum luminance of 230 cd m⁻² at 20 V and the maximum efficiency of 0.62 cd A⁻¹ were obtained due to the introduction of hole-transporting group, representing the best result to date among Tb (III) carboxylate complexes based EL devices. These results indicate that modifications of rare earth complexes are a promising way to improve the properties of EL devices.     

Single crystal EPR and optical absorption study of Cr doped l-histidine hydrochloride monohydrate

EPR study of the Cr³⁺ ion doped l-histidine hydrochloride monohydrate single crystal is done at room temperature. Two magnetically inequivalent interstitial sites are observed. The hyperfine structure for Cr⁵³ isotope is also obtained. The zero field and spin Hamiltonian parameters are evaluated from the resonance lines obtained at different angular rotations and the parameters are: D=(300±2)×10⁻⁴ cm⁻¹, E=(96±2)×10⁻⁴ cm⁻¹, g_x=1.9108±0.0002, g_y=1.9791±0.0002, g_z=2.0389±0.0002, A_x=(252±2)×10⁻⁴ cm⁻¹, A_y=(254±2)×10⁻⁴ cm⁻¹, A_z=(304±2)×10⁻⁴ cm⁻¹ for site I and D=(300±2)×10⁻⁴ cm⁻¹, E=(96±2)×10⁻⁴ cm⁻¹, g_x=1.8543±0.0002, g_y=1.9897±0.0002, g_z=2.0793±0.0002, A_x=(251±2)×10⁻⁴ cm⁻¹, A_y=(257±2)×10⁻⁴ cm⁻¹, A_z=(309±2)×10⁻⁴ cm⁻¹ for site II, respectively. The optical absorption studies of single crystals are also carried out at room temperature in the wavelength range 195-925 nm. Using EPR and optical data, different bonding parameters are calculated and the nature of bonding in the crystal is discussed. The values of Racah parameters (B and C), crystal field parameter (Dq) and nephelauxetic parameters (h and k) are: B=636, C=3123, Dq=2039 cm⁻¹, h=1.46 and k=0.21, respectively.     

Structural elucidation of Cu(II) ion doped in hexaaquozincdiaquobis(malonato)zincate host by EPR spectroscopy

In order to understand the structural behaviour of Cu(II) in a variety of ligand environments, single crystal electron paramagnetic resonance studies of Cu(II) doped in hexaaquazincdiaquabis(malonato)zincate [Zn(H₂O)₆][Zn(mal)₂(H₂O)₂] are carried out at 300 K. Angular variation of copper hyperfine lines in three orthogonal planes shows the presence of single site, with spin Hamiltonian parameters as g_xx=2.034, g_yy=2.159, g_zz=2.388, A_xx=3.39 mT, A_yy=4.89 mT and A_zz=13.72 mT. The g/A tensor direction cosines are compared with various Zn-O directions in the host lattice, which confirm that Cu(II) enters substitutionally in the lattice. The low value of A_zz has been explained by considering admixture of d_²x−²y ground state with d_²z excited state. EPR powder spectra at 300 and 77 K give identical spin Hamiltonian parameters (g_∥=2.367, g_⊥=2.088, A_∥=11.47 mT, A_⊥=2.63 mT). IR, UV-vis and powder XRD data confirm the structure and symmetry of the Cu(II) ion in the host lattice.     

Synthesis, crystal structure and photoconductivity of new molecular complex of C60 with tetrabenzo(1,2-bis[4H-thiopyran-4-ylidene]ethene): Bz4BTPE C60

A new molecular complex of C₆₀ with tetrabenzo(1,2-bis[4H-thiopyran-4-ylidene]ethene), Bz₄BTPE C₆₀ (1) has been obtained. The complex has a layered structure in which closely packed hexagonal layers of C₆₀ alternate with the layers composed of Bz₄BTPE molecules. The complex has a neutral ground state according to UV-vis-NIR spectrum. It has been found that single crystals of 1 show low ‘dark’ conductivity of σ∼10⁻¹⁰ (Ω cm)⁻¹. A 10² increase in photocurrent has been observed upon illuminating the crystal with white light. Photoconductivity of 1 is sensitive to magnetic field with B₀<1 T and increases up to 5% in magnetic field. The photoconductivity spectra of the complex indicate that free charge carriers are generated in the UV-visible range mainly by the Bz₄BTPE excitation (the peaks at 622, 562, 472 and 348 nm) with a possible contribution of charge transfer excitations between neighboring C₆₀ molecules (the peak at 472 nm).     

Synthesis, structure and electroluminescent properties of Schiff-base boron complex with anilido-imine ligand

The Schiff-base ligand boron complex, LBF₂ [L=ortho-C₆H₄(NC₆H₃Me₂-2,6)(CH=NC₆H₃Me₂-2,6)], is synthesized and characterized. The crystal structural study reveals that central boron atom is four coordinate and adopts a distorted tetrahedral geometry in LBF₂. The photo/electroluminescent properties of the boron complex have been studied. The electroluminescent devices were fabricated by doping LBF₂ in polymer blends host of poly(vinylcarbazole) (PVK) and 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazol (PBD) using simple solution spin-coating technique. The single-layer polymer organic light emitter devices exhibited blue-green emission with maximum current efficiency of 1.6 cd/A and maximum luminance of 840 cd/m².     

Synthesis, characterization and optical limiting effect of nickel complexes of multi-sulfur 1,2-dithiolene

Three nickel complexes with a new multi-sulfur 1,2-dithiolene ligand, (n-Bu₄N)[Ni(cddt)₂] 1, (Ph₄P)[Ni(cddt)₂] 2 and [Ni(cddt)₂] 3 (cddt=4a, 6, 7, 7a-5H-cyclopenta[b]-1,4-dithiin-2,3-dithiolate), have been synthesized and characterized by electrochemical measurements, IR, EPR and UV-Vis-NIR spectroscopies. The crystal structure of complex 2 is determined. Their optical nonlinearities are measured by the Z-scan technique with an 8 ns pulsed laser at 532 nm and all exhibit NLO absorptive abilities. Complexes 1 and 2 both exhibit effective self-defocusing performance (n₂=−5.81×10⁻¹⁰ esu for 1 and −4.51×10⁻¹⁰ esu for 2). The optical limiting (OL) effects were observed with nanosecond and picosecond laser pulses. The OL capability of complex 3 is superior to C₆₀ at the same experimental condition in ns measurements.     

Properties of highly oriented spray-deposited fluorine-doped tin oxide thin films on glass substrates of different thickness

Transparent conducting thin films of fluorine-doped tin oxide (FTO) have been deposited onto the preheated glass substrates of different thickness by spray pyrolysis process using SnCl₄·5H₂O and NH₄F precursors. Substrate thickness is varied from 1 to 6 mm. The films are grown using mixed solvent with propane-2-ol as organic solvent and distilled water at optimized substrate temperature of 475 °C. Films of thickness up to 1525 nm are grown by a fine spray of the source solution using compressed air as a carrier gas. The films have been characterized by the techniques such as X-ray diffraction, optical absorption, van der Pauw technique, and Hall effect. The as-deposited films are preferentially oriented along the (2 0 0) plane and are of polycrystalline SnO₂ with a tetragonal crystal structure having the texture coefficient of 6.19 for the films deposited on 4 mm thick substrate. The lattice parameter values remain unchanged with the substrate thickness. The grain size varies between 38 and 48 nm. The films exhibit moderate optical transmission up to 70% at 550 nm. The figure of merit (φ) varies from 1.36×10⁻⁴ to 1.93×10⁻³ Ω⁻¹. The films are heavily doped, therefore degenerate and exhibit n-type electrical conductivity. The lowest sheet resistance (R_s) of 7.5 Ω is obtained for a typical sample deposited on 4 mm thick substrate. The resistivity (ρ) and carrier concentration (n_D) vary over 8.38×10⁻⁴ to 2.95×10⁻³ Ω cm and 4.03×10²⁰ to 2.69×10²¹ cm⁻³, respectively.     

Efficient white organic light-emitting devices using 4,7-diphenyl-1,10-phenanthroline as block layer

A white light-emitting device has been fabricated with a structure of ITO/m-MTDATA (45 nm)/NPB (10 nm)/DPVBi (8 nm)/DPVBi:DCJTB 0.5% (15 nm)/BPhen (x nm)/Alq₃ [(55−x) nm]/LiF (1 nm)/Al, with x=0, 4, and 7. BPhen was used as the hole-blocking layer. This results in a mixture of lights from DPVBi molecules (blue-light) and DCJTB (yellow-light) molecules, producing white light emission. The chromaticity can be readily adjusted by only varying the thickness of the BPhen layer. The CIE coordinates of the device are largely insensitive to the driving voltages. When the thickness of BPhen is 7 nm, the device exhibits peak efficiency of 6.87 cd/A (3.59 lm/W) at the applied voltage of 6 V, the maximum external quantum efficiency η_ext=2.07% corresponding to 6.18 cd/A, and the maximum brightness is 18494 cd/m² at 15 V.     

Electronic properties of D4h d complexes through a crystal-field model: an appraisal

The crystal-field model recently used by Huang et al. [J. Phys. Chem. Solids 64 (2003) 523] for explaining some optical transitions and the g and hyperfine tensors of the CuCl₄²⁻ unit placed in K₂PdCl₄ is critically reviewed. It is firstly pointed out that using accurate 〈r⁴〉₀=2.7 a.u. and 〈r²〉₀=1.0 a.u. values for free Cu²⁺ the d-d transitions of CuCl₄²⁻ calculated in a rigorous crystal-field framework are much smaller than experimental ones. The agreement with experimental values when an approximated 3d wavefunction is used (leading to 〈r⁴〉₀=44.8 a.u. should then be taken as meaningless. The neglect of charge transfer (CT) transitions for explaining the experimental EPR parameters is shown to be against the onset of these excitations in CuCl₄²⁻ observed at about 25,000 cm⁻¹ and the 40% delocalization of the unpaired electron in the b_1g (≈x²−y²) level. Finally it is pointed out that the experimental g tensor for similar units like AgBr₆⁴⁻ or CuBr₄²⁻ involving a higher covalency cannot be explained by a model where the contribution of CT transitions and ligand spin-orbit coupling is ignored.     

Preparation of five-layered Si/SixGe1−x nano-films by RF helicon magnetron sputtering

Five-layered Si/Si_xGe_1−x films on Si(1 0 0) substrate with single-layer thickness of 30 nm, 10 nm and 5 nm, respectively were prepared by RF helicon magnetron sputtering with dual targets of Si and Ge to investigate the feasibility of an industrial fabrication method on multi-stacked superlattice structure for thin-film thermoelectric applications. The fine periodic structure is confirmed in the samples except for the case of 5 nm in single-layer thickness. Fine crystalline Si_xGe_1−x layer is obtained from 700 °C in substrate temperature, while higher than 700 °C is required for Si good layer. The composition ratio (x) in Si_xGe_1−x is varied depending on the applied power to Si and Ge targets. Typical power ratio to obtain x = 0.83 was 7:3, Hall coefficient, p-type carrier concentration, sheet carrier concentration and mobility measured for the sample composed of five layers of Si (10 nm)/Si_0.82Ge_0.18 (10 nm) are 2.55 × 10⁶ /°C, 2.56 × 10¹² cm⁻³, 1.28 × 10⁷ cm⁻², and 15.8 cm⁻²/(V s), respectively.     

Structure and high pressure behaviour of organic crystals based on aromatically substituted 1,3,4-oxadiazoles

The crystalline structure of a new compound containing the 1,3,4-oxadiazole moiety, 4-(5-methyl-1,3,4-oxadiazole-2yl-)-N,N′-dimethyl-phenylamine (MODPA) was determined. It shows a monoclinic structure with space group P2₁/c and lattice parameters: a=1.02997(6), b=0.64840(4), c=1.58117(10) nm and β=99.4820(10)°. To study the intermolecular interactions in oxadiazole containing organic crystals, X-ray studies on MODPA and 2,5-diphenyl-1,3,4-oxadiazole (DPO) were performed up to 5 GPa at room temperature. The Murnaghan equation of state is used to describe the compression behaviour of both substances. From these results, the bulk modulus and its pressure derivative were determined. The values obtained are: K₀=6.3 GPa and K′₀=6.8 for MODPA and K₀=7.3 GPa and K′₀=6.7 for DPO. Additionally, measurements under increasing temperature at ambient pressure were carried out to evaluate the thermal expansion coefficient: α=1.8×10⁻⁴ K⁻¹ for MODPA and α=1.9×10⁻⁴ K⁻¹ for DPO.     

OH impurities in co-doped LiNbO3:Cr :ZnO congruent crystals

Infrared optical absorption has been used to study OH⁻impurities into congruent co-doped LiNbO₃:Cr³⁺:ZnO crystals doped with different Zn²⁺ concentration. The OH⁻ IR absorption spectra present three bands that can be associated with different OH⁻ complex centres available in the lattice. For crystals with lower Zn²⁺ concentrations (<4.7%) only one IR absorption band centred at 2867 nm (3490 cm⁻¹) is reported which is associated with the OH⁻ unperturbed vibration. For crystals with higher Zn²⁺ concentrations (>4.7%), two new bands associated with OH⁻vibration in distortion environment are reported. These bands are centred at 2827 nm (3537 cm⁻¹) and 2847 nm (3512 cm⁻¹) and can be associated with OH⁻-Zn²⁺ and Cr³⁺(Li⁺)-OH⁻-Zn²⁺(Int.) complex centres, respectively. Electron paramagnetic resonance (EPR) has been used to identify the Cr³⁺ centres in the lattice of the doped LiNbO₃:ZnO crystals.     

Effects of lattice and local dynamics in EPR spectra and electron spin relaxation of vibronic Cu(imidazole)6 complexes in Zn(imidazole)6Cl2·4H2O crystals

Cu(im)₆ complexes in Zn(im)₆Cl₂·4H₂O exhibit a strong Jahn-Teller effect which is static below 100 K and the complex in localized in the two low-energy potential wells. We have reinvestigated electron paramagnetic resonance (EPR) spectra in the temperature range 4.2-300 K and determined the deformation directions produced by the Jahn-Teller effect, energy difference 11 cm⁻¹ between the wells and energy 300 cm⁻¹ of the third potential well. The electron spin relaxation was measured by electron spin echo (ESE) method in the temperature range of 4.2-45 K for single crystal and powder samples. The spin-lattice relaxation is dominated by a local mode of vibration with energy 11 cm⁻¹ at low temperatures. We suppose that this mode is due to reorientations (jumps) of the Cu(im)₆ complex between the two lowest energy potential wells. At intermediate temperatures (15-35 K), the T₁ relaxation is determined by the two-phonon Raman processes in acoustic phonon spectrum with Debye temperature Θ_D=167 K, whereas at higher temperatures the relaxation is governed by the optical phonon of energy 266 cm⁻¹. The ESE dephasing is produced by an instantaneous diffusion below 15 K with the temperature-independent phase memory time , then it grows exponentially with temperature with an activation energy of 97 cm⁻¹. This is the energy of the first excited vibronic level. The thermal population of this level leads to a transition from anisotropic to isotropic EPR spectrum observed around 90 K. FT-ESE gives ESEEM spectrum dominated by quadrupole peaks from non-coordinating ¹⁴N atom of the imidazole rings and the peak from double quantum transition ν_dq. We show that the amplitude of the ν_dq transition can be used to determine the number of non-coordinating nitrogen atoms.     

EPR and optical investigation of VO(II) in Zn(C3H3O4)2(H2O)2 single crystals: An interstitial site

EPR spectroscopic investigations on single crystals of diaquabis[malonato(1-)-κ²O,O′] zinc(II) doped with VO(II) ion have been carried out at X-band frequencies and at 300 K. The single crystal, rotated along the three mutually orthogonally axes, has yielded spin-Hamiltonian parameters g and A as: g_xx=1.980, g_yy=1.972, g_zz=1.937 and A_xx=8.4, A_yy=6.1, A_zz=18.1 mT, respectively. These spin-Hamiltonian parameters reflect a slight deviation from axial symmetry to rhombic, which is elucidated by the interstitial occupation of vanadyl ions. The isofrequency plots and powder EPR spectrum have been simulated. The percentage of metal-oxygen bond has been estimated. The optical absorption spectrum exhibits four bands at 257, 592, 720 and 764 nm suggesting a C_4v symmetry. The admixture coefficients and bonding parameters have also been calculated by collaborating EPR data with optical data.     

Highly improved electroluminescence from double-layer devices based on a carbazole-functionalized europium<Superscript>3+</Superscript> complex

A novel europium complex Eu(TTA)₃(CPPO)₂ (1) (TTA=thenoyltrifluoroacetone, CPPO=9-[4-(diphenyl-phosphinoyl)-phenyl]-9H-carbazole) based on the phosphine oxide ligand with bipolar structure was used to fabricate double-layer devices. The strong hole injection and transport ability of 1 was proved. The luminance of 414 cd m⁻² was achieved with the device configuration ITO/Eu(TTA)₃(CPPO)₂(40 nm)/BCP (30 nm)/Mg:Ag (BCP = 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline), which is favorable among double-layer organic light emitting devices based on small molecular Eu³⁺ complexes. The maximum current efficiency of 2.44 cd A⁻¹ and external quantum efficiency of 1.55% demonstrate the potential application of 1 as a promising candidate for high-efficiency, simple-structure and pure red-emitting devices.     

Annealing temperature influence on electrical properties of ion beam sputtered Bi2Te3 thin films

Ion beam sputtering process was used to deposit n-type fine-grained Bi₂Te₃ thin films on BK7 glass substrates at room temperature. In order to enhance the thermoelectric properties, thin films are annealed at the temperatures ranging from 100 to 400 °C. X-ray diffraction (XRD) shows that the films have preferred orientations in the c-axis direction. It is confirmed that grain growth and crystallization along the c-axis are enhanced as the annealing temperature increased. However, broad impurity peaks related to some oxygen traces increase when the annealing temperature reached 400 °C. Thermoelectric properties of Bi₂Te₃ thin films were investigated at room temperature. The Bi₂Te₃ thin films, including as-deposited, exhibit the Seebeck coefficients of −90 to −168 μV K⁻¹ and the electrical conductivities of 3.92×10²-7.20×10² S cm⁻¹ after annealing. The Bi₂Te₃ film with a maximum power factor of 1.10×10⁻³ Wm⁻¹ K⁻² is achieved when annealed at 300 °C. As a result, both structural and transport properties have been found to be strongly affected by annealing treatment. It was considered that the annealing conditions reduce the number of potential scattering sites at grain boundaries and defects, thus improving the thermoelectric properties.     

Bright electrophosphorescent devices based on sterically hindered spacer-containing Cu(I) complex

A Cu(I) complex, [Cu(Dppp)(DPEphos)]BF₄ (Dppp=2,3-diphenyl-pyrazino[2,3-f][1,10]phenanthroline, DPEphos=Bis[2-(diphenylphosphino)phenyl]ether), is synthesized and used as the dopant in bright electrophosphorescent devices with the general structure ITO/m-MTDATA (30 nm)/NPB (20 nm)/CBP: ×wt% [Cu(Dppp)(DPEphos)]BF₄ (30 nm)/Bphen (20 nm)/Alq₃ (20 nm)/LiF (0.8 nm)/ Al (200 nm). These devices exhibit a maximum brightness of 4483 cd/m² and a peak efficiency of 3.4 cd/A. Compared with previously reported similar devices based on Cu(I) complexes, the brightness of the devices presented in this article is the best. Meanwhile, 2% [Cu(Dppp)(DPEphos)]BF₄-based devices exhibit white light-emitting properties with CIE coordinates of (0.32. 0.35) at 10 V.     

Structural and electrical transport properties of ZnxFe3−xO4 thin film deposited on Si (1 1 1) by pulsed-laser deposition

Polycrystalline thin films of Fe_3−xZn_xO₄ (x = 0.0, 0.01 and 0.02) were prepared by pulsed-laser deposition technique on Si (1 1 1) substrate. X-ray diffraction studies of parent as well as Zn doped magnetite show the spinel cubic structure of film with (1 1 1) orientation. The order–disorder transition temperature for Fe₃O₄ thin film with thickness of 150 nm are at 123 K (Si). Zn doping leads to enhancement of resistivity by Zn²⁺ substitution originates from a decrease of the carrier concentration, which do not show the Verwey transition. The Raman spectra for parent Fe₃O₄ on Si (1 1 1) substrate shows all Raman active modes for thin films at energies of T_2g¹, T_2g³, T_2g², and A_1g at 193, 304, 531 and 668 cm⁻¹. It is noticed that the frequency positions of the strongest A_1g mode are at 668.3 cm⁻¹, for all parent Fe₃O₄ thin film shifted at lower wave number as 663.7 for Fe_2.98Zn_0.02O₄ thin film on Si (1 1 1) substrate. The integral intensity at 668 cm⁻¹ increased significantly with decreasing doping concentration and highest for the parent sample, which is due to residual stress stored in the surface.     

Facile fabrication of Zn/Zn5(OH)8Cl2·H2O flower-like nanostructure on the surface of Zn coated with poly (N-methyl pyrrole)

Zn/Zn₅(OH)₈Cl₂·H₂O flower-like nanostructures was electrodeposited on the coated Zn with poly (N-methyl pyrrole) in 0.1 M Zn (NO₃)₂ and 0.1 M KCl solution. The morphology and the structure of the Zn/Zn₅(OH)₈Cl₂·H₂O were characterized by Field Emission Scanning Electron Microscopy (FESEM), Fourier transform infrared (FT-IR) spectroscopy and X-ray diffraction analysis (XRD). The FT-IR results showed special peaks at 908 and 728 cm⁻¹ related to Zn₅(OH)₈Cl₂·H₂O. The FESEM results indicated that Zn/Zn₅(OH)₈Cl₂·H₂O consists of a flower-like nanostructure and these flower-shaped structures contain many shaped nanopetals with the thickness of 27.8 nm. The XRD result confirmed that the major phase of electrodeposited product in 0.1 M KCl as supporting electrolyte was Zn₅(OH)₈Cl₂·H₂O. The ability of PMPy to create a thin film and the existence of several pores in its matrix act as a mold for the growth of Zn/Zn₅(OH)₈Cl₂·H₂O flower-like nanostructure. The trapping of Cl⁻ and OH⁻ within pores can be considered as the reason for the formation of flowerlike Zn/Zn₅(OH)₈Cl₂·H₂O nanostructures in 0.1 M KCl.     

Samarium(III) picrate tetraethylene glycol complex: Photoluminescence study and active material in monolayer electroluminescent

A mononuclear Sm(III) complex involving Pic and EO4 (where Pic=picrate anion and EO4=tetraethylene glycol) has been studied. It shows a bright-orange emission when used as active material in a monolayer electroluminescent device of ITO/EO4-Sm-Pic/Al. The crystal structure of the complex consists of [Sm(Pic)₂(H₂O)(EO4)]⁺ cation and [Pic]⁻ anion. The Sm(III) ion is coordinated with nine oxygen atoms from one EO4 ligand in a pentadentate mode, two Pic anions each in bidentate and monodentate modes, and one water molecule. Both the terminal alcohol groups of the acyclic EO4 ligand were involved in the O-H…O hydrogen bonding by infinite one-dimensional (1D) chain within a symmetry direction [0 1 0]. The photoluminescence (PL) spectrum of the thin film shows the typical spectral features of the Sm(III) ion (⁴G_5/2→⁶H_7/2 transitions). The root-mean-square (rms) of the roughness of thin film is 30.605 nm and indicates that the formation of the monolayer electroluminescent device is not uniform and retains a high crystallinity. Typical semiconductor current-voltage (I-V) property was also observed in this device with threshold and turn voltages of 2.8 and 6.2 V, respectively. The [Sm(Pic)₂(H₂O)(EO4)](Pic)·H₂O complex can be applied as a luminescent center in OLED for bright-orange emission.