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1.
We investigated the behavior of the structure of titanium hydride (TiH2), an important compound in hydrogen storage research, at elevated temperatures (0-120 °C) and high pressures (1 bar-34 GPa). Temperature-induced changes of TiH2 as indicated in the alteration of the ambient X-ray demonstrated a cubic to tetragonal phase transition occurring at about 17 °C. The main focus of this study was to identify any pressure-induced structural transformations, including possible phase transitions, in TiH2. Synchrotron X-ray diffraction studies were carried out in situ (diamond anvil cell) in a compression sequence up to 34 GPa and in subsequent decompression to ambient pressure. The pressure evolution of the diffraction patterns revealed a cubic (Fm-3m) to tetragonal (I4/mmm) phase transition at 2.2 GPa. The high-pressure phase persisted up to 34 GPa. After decompression to ambient conditions the observed phase transition was completely reversible. A Birch-Murnaghan fit of the unit cell volume as a function of pressure yielded a zero-pressure bulk modulus K0=146(14) GPa, and its pressure derivative K0=6(1) for the high-pressure tetragonal phase of TiH2.  相似文献   

2.
We have measured the equation of state of the intermetallic compound AuIn2 up to 20 GPa and Cd0.8Hg0.2 up to 50 GPa using methanol-ethanol-water solution or argon as pressure media. In the experiments performed with argon as pressure medium, we minimized non-hydrostatic conditions by thermally annealing the sample. We present data revealing compressibility anomalies in AuIn2 at 2.7 GPa and in Cd0.8Hg0.2 near 8, 18 and 34 GPa with methanol-ethanol-water and argon. At pressures above 5 GPa the P-V data for AuIn2 and Cd0.8Hg0.2 from experiments preformed with argon as a pressure medium start deviating from those using methanol-ethanol-water, and the equation of state based on experiments in argon is stiffer compared with that in methanol-ethanol-water. This behavior is consistent with the relative merits of the two pressure transmitting media as documented in the literature. We also provide a brief summary of the results of electronic structure calculations that associate these anomalies with electronic topological transitions.  相似文献   

3.
Photoluminescence spectra of Sm2+-doped BaBr2 have been measured under hydrostatic pressures up to 17 GPa at room temperature. In the low pressure range a red-shift of the broad 5d-4f transition of −145 cm−1/GPa is observed. From 5 to 8 GPa a phase mixture of the initial orthorhombic phase and the high-pressure monoclinic phase gives rise to two 5d-4f bands, which are strongly overlapping. Above 8 GPa the crystal is completely transformed to its high-pressure phase where two different Sm2+ sites exist, but only one broad 5d-4f transition is detected. It exhibits a red-shift of −36 cm−1/GPa. In addition, the line shifts of the 5D07FJ (J=0, 1, 2) transitions are investigated. Linear shifts of −19 cm−1/GPa for J=0, 2 and of −13 cm−1/GPa for J=1 are observed in the pressure range from 0 to 5 GPa.  相似文献   

4.
We present a room temperature high-pressure X-ray diffraction study of the layered compound 1T-TaS2 up to 20 GPa. This material is known to exhibit a variety of structural phase transitions that are ascribed to the stabilization of charge density wave states. It has been recently shown that at pressures larger than 3 GPa and up to 25 GPa, 1T-TaS2 becomes superconductor below about 5 K. It was suggested that this superconductivity coexists with different CDW states, an hypothesis that can be tested by X-ray diffraction. Our first results at room temperature show that at around 1.9 GPa, the nearly-commensurate (NCCDW) phase transforms into a phase similar to the high temperature incommensurate phase (ICCDW). Above 9 GPa, we show the existence of another IC phase, still discernable up to 20 GPa despite the pressure-induced crystal damage above 13 GPa. These results are consistent with resistivity measurements, but call for a complete exploration of the PT phase diagram of 1T-TaS2.  相似文献   

5.
High pressure behavior of CaB6 with cubic crystal structure is investigated by means of energy dispersive X-ray diffraction and by employing in situ resistance measurement in a diamond anvil cell. Two newcome high pressure phase transitions are found with pressure ranging from ambient to 26 GPa. The first one at 12 GPa is a structural phase transition from CsCl-type structure to orthogonal structure, which is reflected by both the X-ray diffraction and the resistance variation. The other one at 3.7 GPa is suggested to be an electronic transition, which is observed only in resistance measurement. The diffraction pattern recovered while the pressure is released to 0 GPa with a pressure hysteresis over 11 GPa, which implies the reversibility of the two phase transitions. Bulk moduli of the cubic and orthogonal phases are estimated by fitting the data to a Brich-Murnaghan equation of state equal to 169.9 and 48.2 GPa, respectively.  相似文献   

6.
We measured the heat capacity of CeIrSi3 (100 mK<T<6 K) under high pressure up to P=1.38 GPa. The measurements have been used a quasiadiabatic method utilizing a CuBe piston-cylinder pressure cell in a dilution refrigerator. At 0 GPa, a sharp anomaly which indicates the antiferromagnetically transition is observed at TN=5 K. TN decreases monotonically with increasing pressure up to P=1.38 GPa. The magnetic entropy is released below TN only 19% of R ln 2 at 0 GPa. And the magnetic entropy decreases with increasing pressure up to 1.38 GPa, 64% compared to that at 0 GPa.  相似文献   

7.
We present new results on the pressure dependence of the electronic band gap of molecular C60 measured by photoluminescence spectroscopy up to 10 GPa at room temperature. In agreement with previous results, the energy gap decreases with increasing pressure up to about 6 GPa. For higher pressures, however, we observe an energy gap that is wider than that at 6 GPa.  相似文献   

8.
The structural, elastic and electronic properties of BiI3 are investigated using the first-principles pseudopotential calculations within the framework of density functional theory. The calculated equilibrium structural parameters agree well with the experimental values. The results show that rhombohedral R-3 structure is low enthalpy structure at zero pressure. R-3 structure will transform into SbI3-type structure (space group P21/c) at about 7.0 GPa. At zero pressure, BiI3 with R-3 symmetry meets the mechanical stability criteria, but BiI3 with P-31 m symmetry is an unstable one mechanically. For R-3 structure, the obtained bulk, shear, and Young’s moduli are 25.6, 15.3 and 38.3 GPa, respectively. BiI3 presents large elastic anisotropy. Debye temperature of R-3 structure calculated is 181 K. The metallization pressure of R-3 structure is about 133 GPa and that of predicted high pressure phase P21/c structure is about 61 GPa, indicating BiI3’s potential application as a nuclear radiation detector under high pressure environment.  相似文献   

9.
Phase transitions in CsHSO4 at pressures up to 2.5 GPa have been studied with the help of electrical impedance measurements. The phase boundaries have been identified with the help of calculated activation energies of electrical conductivity and dielectric relaxation time. The derived temperatures of phase transition from the low conductive phase II into super ionic phase I at pressure less than 1 GPa confirm the previous results of Ponyatovski? et al. (1985) [4] and Friesel et al. (1989) [27]. The phase diagram derived in this study for pressure larger than 1 GPa differs from the data of Ponyatovski? et al. (1985) [4]. The phase transitions IV-VI and VI-I occur at higher temperatures having significantly larger Clapeyron slope. The phase VII was not identified from heating cycle and appears only under cooling between phases I and VI. The phase VIII was detected at 2.5 GPa at T<350 K and only during heating.  相似文献   

10.
Results of X-ray diffraction, electrical resistance, thermoelectric power measurements and electronic band structure calculations on NiSi2 under high pressure are reported. The thermoelectric power (TEP) changes sign near 0.5 GPa (from +30 to −20 μV/K). As the pressure is increased, the value of TEP increases further in magnitude and near 7 GPa it becomes −50 μV/K. The pressure vs. resistance curve measured up to 30 GPa using diamond anvil (DAC)-based technique exhibits a broad hump near 12 GPa and exhibits hysteresis on pressure release. The ADXRD patterns up to 42 GPa show a gradual irreversible loss of long-range order in NiSi2 with the diffraction lines progressively broadening under pressure. The FWHM of the diffraction lines show a rapid increase in the half-widths close to 0.5 GPa and also near 12 GPa. The computed band structure at a compression (without any disorder) corresponding to 12 GPa, exhibits an electronic topological transition (ETT). The rapid increase in disorder above 12 GPa implies that the ETT may be facilitating the structural disorder. It is suggested that the pressure drives the material through a region of entropic and energetic barriers and induces disorder in the material.  相似文献   

11.
Electrical conduction and crystal structure of Al2(WO4)3 at 400 °C have been studied as a function of pressure up to 5.5 GPa using impedance methods and synchrotron radiation X-ray diffraction, respectively. AC impedance spectroscopy and DC polarization measurements reveal an ionic to electronic dominant transition in electrical conductivity at a pressure as low as 0.9 GPa. Conductivity increases with pressure and reaches a maximum at 4.0 GPa, where the conductivity value is 5 orders of magnitude greater than the 1 atm value. Upon decompression, the conductivity retains the maximum value until the sample is cooled at 0.5 GPa. The high pressure-temperature X-ray diffraction results show that the lattice parameters decrease as pressure increases and the crystal structure undergoes an orthorhombic to tetragonal-like transformation at a pressure ∼3.0 GPa. The change of conduction mechanism from ionic to electronic may be explained by means of pressure-induced valence change of W6+→W5+, which results in electron transfer between W5+-W6+ sites at high pressure.  相似文献   

12.
Using a microcircuit fabricated on a diamond anvil cell, in situ conductivity measurements on nanophase (NP) γ-Fe2O3 are obtained under high pressure. For NP γ-Fe2O3, the abrupt increase in electrical conductivity occurs at a pressure of 21.3 GPa, corresponding to a transition from maghemite to hematite. Above 26.4 GPa, conductivity increases smoothly with increasing pressure. No distinct abnormal change is observed during decompression, indicating that transformation is irreversible. The temperature-dependence of the conductivity of NP γ-Fe2O3 was investigated at several pressures, indicating the electrical conductivity of the sample increases with increasing pressure and temperature, and that a remarkable phenomenon of discontinuity occurs at 400 K. The abnormal change is attributed to the electronic phase transitions of NP γ-Fe2O3 due to the variation of inherent cation vacancies. Besides, the temperature-dependence of the electrical conductivity displays semiconductor-like behavior before 33.0 GPa.  相似文献   

13.
TaO2F, with a ReO3-type structure, has been studied at up to 12.8 GPa using monochromatic synchrotron powder diffraction and diamond anvil cells. Two-phase transitions at ∼0.7 and 4 GPa were observed on compression. Below ∼0.7 GPa the cubic material was found to have a bulk modulus (K0) of 36(3) GPa (Kp fixed at 4.0), similar to that reported for NbO2F but much smaller than that of ReO3. Immediately above 0.7 GPa on compression, the diffraction data were not fully consistent with a VF3-type structure as previously proposed for NbO2F. On decompression, the data between 8 and 4 GPa could be satisfactorily attributed to a single R-3c phase with a VF3-type structure and an average bulk modulus of 60(2) GPa.  相似文献   

14.
High pressure Raman scattering experiments have been performed for Rb8Sn442 in order to investigate the pressure induced phase transition. At pressures of 6.0 and 7.5 GPa, Raman spectrum was drastically changed, indicating the phase transitions. The irreversibility of the spectral change and the disappearance of Raman peak observed at 7.5 GPa strongly suggest the occurrence of irreversible amorphization.  相似文献   

15.
High-pressure angle-dispersive X-ray diffraction measurements show that Cd0.80Hg0.20 alloy remains in the hcp structure up to 50 GPa. We observe subtle anomalies in the pressure variation of the lattice parameters and their ratio, and in normalized stress versus strain. Electronic-structure calculations, as well as experimental and theoretical results for Cd, suggest that these anomalies are related to the occurrence of electronic topological transitions. Our results support Lifshitz's prediction that electronic phase transitions can cause anomalies in structural and elastic properties of materials.  相似文献   

16.
We have studied polycrystalline brookite TiO2 using energy-dispersive X-ray diffraction at pressures up to 27.8 GPa and derived an ambient-pressure bulk modulus of 255 GPa using Birch-Murnaghan's equations of state with a fixed value of 4 as its first derivative. The transition from brookite-type to baddeleyite-type was observed to start at 15.8 GPa and finished at 22.8 GPa. Upon decompression, the α-PbO2 structure appeared at 3.5 GPa and the baddeleyite-type structure remained down to 1.6 GPa, the lowest pressure in the present work.  相似文献   

17.
The results of high-pressure angle dispersive X-ray diffraction measurements up to 34.3 GPa on the double perovskite Ba2MgWO6 are presented. The ambient rock salt phase (SG: Fm-3m) is found to be stable up to the highest pressure of the present measurements. The third order Birch-Murnaghan equation of state when fitted to pressure-volume data, yielded a zero pressure bulk modulus (B0),and its first and second pressure derivatives as 137.0(81) GPa, and 3.9(5) and −0.03 GPa−1, respectively.  相似文献   

18.
The equations of state of CeCu2Si2 and CeCu2Ge2 to about 60 GPa, as well as that of CeNi2Ge2 to 22 GPa and the valence state of Ce in CeCu2Ge2 to 20 GPa have been studied at room temperature in a diamond-anvil cell using synchrotron radiation sources. In each compound, the ambient-pressure phase (tetragonal ThCr2Si2-type structure) persisted to the highest pressure studied. The unit cell volumes of CeNi2Ge2 at ∼5 GPa and CeCu2Ge2 at ∼7 GPa, respectively, approached that of CeCu2Si2 taken at ambient pressure. From the equation-of-state data, the bulk modulus was derived to be 112.0±5.1 GPa for CeCu2Si2, 125.6±4.3 GPa for CeCu2Ge2, and 178.4±14.3 GPa for CeNi2Ge2. The valence state of Ce in CeCu2Ge2 remained trivalent throughout the pressure range investigated.  相似文献   

19.
We present a synchrotron X-ray diffraction study of pressure-induced changes in nanocrystalline anatase (with a crystallite size of 30-40 nm) to 35 GPa. The nanoanatase was observed to a pressure above 20 GPa. Direct transformation to the baddeleyite-TiO2 polymorph was seen at 18 GPa. A fit of the pressure versus volume data to a Birch-Murnaghan equation yielded the following parameters: zero-pressure volume, V0=136.15 Å3, bulk modulus, KT=243(3) GPa, and the pressure derivative of bulk modulus, K′=4 (fixed). The bulk modulus value obtained for the nanocrystalline anatase is about 35% larger than that of the macrocrystalline counterpart.  相似文献   

20.
We report the influence of external high-pressure (P up to 8 GPa) on the temperature (T) dependence of electrical resistivity (ρ) of a Yb-based Kondo lattice, YbPd2Si2, which does not undergo magnetic ordering under ambient pressure condition. There are qualitative changes in the ρ(T) behavior due to the application of external pressure. While ρ is found to vary quadratically below 15 K (down to 45 mK) characteristic of Fermi-liquids, a drop is observed below 0.5 K for P=1 GPa, signaling the onset of magnetic ordering of Yb ions with the application of P. The T at which this fall occurs goes through a peak as a function of P (8 K for P=2 GPa and about 5 K at high pressures), mimicking Doniach's magnetic phase diagram. We infer that this compound is one of the very few Yb-based stoichiometric materials, in which one can traverse from valence fluctuation to magnetic ordering by the application of external pressure.  相似文献   

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