共查询到20条相似文献,搜索用时 15 毫秒
1.
E.A MahmoudM.M El-Samanoudy A.S Abd Rabo 《Journal of Physics and Chemistry of Solids》2002,63(11):2003-2010
Optical absorption at room temperature and electrical conductivity at temperatures between 283 and 333 K of vacuum evaporated GexFexSe100−2x (0≤x≤15) amorphous thin films have been studied as a function of composition and film thickness. It was found that the optical absorption is due to indirect transition and the energy gap increases with increasing both Ge and Fe content; on the other hand, the width of the band tail exhibits the opposite behavior. The optical band gap Eopt was found to be almost thickness independent. The electrical conductivity show two types of conduction, at higher temperature the conduction is due to extended states, while the conduction at low temperature is due to variable range hopping in the localized states near Fermi level. Increasing Ge and Fe contents were found to decrease the localized state density N(EF), electrical conductivity and increase the activation energy for conduction, which is nearly thickness independent. Variation of the atomic densities ρ, molar volume V, glass transition temperature Tg cohesive energy C.E and number of constraints NCo with average coordination number Z was investigated. The relationship between the optical gap and chemical composition is discussed in terms of the cohesive energy C.E, average heat of atomization and coordination numbers. 相似文献
2.
Glasses in the system Ge-Se-S were prepared with different Se/S ratios in order to investigate the compositional dependence of selected physical properties. We report the results of a systematic study examining the UV-vis transmission, dc electrical conductivity and X-ray diffraction of the system Ge(SxSe1−x)2 with x=0, 0.1, 0.4 and 1.0 where replacement of S by Se was made. The changes in the optical energy gap, Eg, (from 1.95 to 2.43 eV) and band tail width, Ee, (from 103 to 243 meV) behave contrarily to the change in refractive index, n, (from 2.3 to 2) with the progressive replacement of S by Se. This behavior was discussed and interpreted with the changes in cohesive energy. The analysis of defects in the prepared films was carried out by the examination of activation energies obtained from dc electrical conductivity. The analysis of the X-ray diffraction pattern revealed a remarkable reduction in the intensity of the first and second diffraction peaks with the progressive replacement of S content, which confirms a change in the intermediate range order structure: reorganization of the structural properties. 相似文献
3.
O. Chaix-Pluchery B. ChenevierV. Aubry-Fortuna I. Matko 《Journal of Physics and Chemistry of Solids》2002,63(10):1889-1900
X-ray diffraction experiments have been combined with Raman scattering and transmission electron microscopy data to analyze the result of rapid thermal annealing (RTA) applied to Zr films, 16 or 80 nm thick, sputtered on Si1−xGex epilayers (0≤x≤1). The C49 Zr(Si1−xGex)2 is the unique phase obtained after complete reaction. ZrSi1−xGex is formed as an intermediate phase. The C49 formation temperature Tf is lowered by the addition of Ge in the structure. Above a critical Ge composition close to x=0.33, a film microstructure change was observed. Films annealed at temperatures close to Tf are continuous and relaxed. Annealing at T>Tf leads to discontinuous films: surface roughening resulting from SiGe diffusion at film grain boundaries occurred. Grains are ultimately partially embedded in a SiGe matrix. A reduction in the lattice parameters as well as a shift of Raman lines are observed as T exceeds Tf. Both Ge non-stoichiometry and residual stress have been considered as possible origins for these changes. However, as Ge segregation has never been detected, even by using very efficient techniques, it is thought that the changes originate merely from residual stress. The C49 grains are expected to be strained under the SiGe matrix effect and shift of the Raman lines would indicate the stress is compressive. Some simple evaluations of the stress values indicate that it varies between −0.3 and −3.5 GPa for 0≤x≤1 which corresponds to a strain in the range (−0.11, −1.15%). X-ray and Raman determinations are in good agreement. 相似文献
4.
B. Harihara Venkataraman 《Journal of Physics and Chemistry of Solids》2005,66(10):1640-1646
Layered SrBi2(Nb1−xVx)2O9−δ (SBVN) ceramics with x lying in the range 0-0.3 (30 mol%) were fabricated by the conventional sintering technique. The microstructural studies confirmed the truncating effect of V2O5 on the abnormal platy growth of SBN grains. The electrical conductivity studies were centred in the 573-823 K as the Curie temperature lies in this range. The concentration of mobile charge carriers (n), the diffusion constant (D0) and the mean free path (a) were calculated by using Rice and Roth formalism. The conductivity parameters such as ion-hopping rate (ωp) and the charge carrier concentration (K′) term have been calculated using Almond and West formalism. The aforementioned microscopic parameters were found to be V2O5 content dependent on SrBi2(Nb1−xVx)2O9−δ ceramics. 相似文献
5.
Thin amorphous As-Se films were prepared by pulsed laser deposition (PLD) and by classical thermal evaporation techniques. Raman spectra and optical properties (optical gap, Egopt, index of refraction, n, third-order non-linear susceptibility, χ(3)) of prepared films and their photo- and thermally induced changes were studied. The structure of laser deposited films was close to the corresponding bulk glasses contrary to thermal evaporated films. The composition of PLD films was practically unchanged during the process of deposition. The optically and thermally induced changes of n and of Egopt in PLD films are different from the changes in thermally deposited films. The differences are discussed. 相似文献
6.
A.K. Diab M.M. Wakkad E.Kh. Shokr W.S. Mohamed 《Journal of Physics and Chemistry of Solids》2010,71(9):1381-1387
Physical properties of In35Sb45Se20−xTex thin films with different compositions (x=2.5, 5, 7.5, 10, 12.5 and 15 at %) prepared by electron beam evaporation method are studied. X-ray diffraction results indicate that the as-evaporated films depend on the Te content and the crystallized compounds consist mainly of Sb2Se3 with small amount of Sb2SeTe2. Transmittance and reflectance of the films are found to be thickness dependent. Optical-absorption data indicate that the absorption mechanism is direct transition. Optical band gap values decrease with increase in Te content as well as with increase in film thickness. 相似文献
7.
A chemical spray pyrolysis technique for deposition of p-type Mg-doped CuCrO2 transparent oxide semiconductor thin films using metaloorganic precursors is described. As-deposited films contain mixed spinel CuCr2O4 and delafossite CuCrO2 structural phases. Reduction in spinel CuCr2O4 fraction and formation of highly crystalline films with single phase delafossite CuCrO2 structure is realized by annealing at temperatures ?700 °C in argon. A mechanism of synthesis of CuCrO2 films involving precursor decomposition, oxidation and reaction between constituent oxides in the spray deposition process is presented. Post-annealed CuCr0.93Mg0.07O2 thin films show high (?80%) visible transmittance and sharp absorption at band gap energy with direct and indirect optical band gaps 3.11 and 2.58 eV, respectively. Lower (∼450 °C) substrate temperature formed films are amorphous and yield lower direct (2.96 eV) and indirect (2.23 eV) band gaps after crystallization. Electrical conductivity of CuCr0.93 Mg0.07O2 thin films ranged 0.6-1 S cm−1 and hole concentration ∼2×1019 cm−3 determined from Seebeck analysis. Temperature dependence of conductivity exhibit activation energies ∼0.11 eV in 300-470 K and ∼0.23 eV in ?470 K region ascribed to activated conduction and grain boundary trap assisted conduction, respectively. Heterojunction diodes of the structure Au/n-(ZnO)/p-(CuCr0.93Mg0.07O2)/SnO2 (TCO) were fabricated which show potential for transparent wide band gap junction device. 相似文献
8.
Zheng Wen-Chen Wu Shao-Yi Zhao Bei-JunZhu Shi-Fu 《Journal of Physics and Chemistry of Solids》2002,63(5):895-897
The substitutional sites of Co2+ ions in Co2+-doped CuG1−xAlxSe2 (including CuGaSe2 where x=0 and CuAlSe2 where x=1) semiconductors are studied by analyzing the composition x dependence of optical spectral parameters reported in the previous literature for these materials. From the studies, we suggest that Co2+ occupy I-group cation site rather than III-group cation site. The suggestion is discussed. 相似文献
9.
E.V. Zenkov 《Journal of Physics and Chemistry of Solids》2010,71(9):1295-1300
Ternary PdMnxFe1−x alloys are known to form a microinhomogeneous random mixture of PdMn and PdFe phases. The unconventional ρ(x) dependence of dc resistivity and singularities in low frequency optical conductivity spectra of alloys are described footing within the effective medium approach. The essential point of the model proposed is the anomalous role of insulating interfaces, whose proliferation at intermediate x gives rise to the observed maximum of resistivity near x?0.8. 相似文献
10.
Preparation of transparent and conducting indium doped CdO thin films by spray pyrolysis on glass substrate is reported for various concentration of indium (2-8 wt%) in the spray solution. The electrical, optical and structural properties of indium doped CdO films were investigated using different techniques such as Hall measurement, optical transmission, X-ray diffraction and scanning electron microscope. X-ray analysis shows that the undoped CdO films are preferentially orientated along (2 0 0) crystallographic direction. Increase of indium doping concentration increases the films packing density and reorient the crystallites along (1 1 1) plane. A minimum resistivity of 4.843×10−4 Ω cm and carrier concentration of 3.73×1020 cm−3 with high transmittance in the range 300-1100 nm were achieved for 6 wt% indium doping. The band gap value increases with doping concentration and reaches a maximum of 2.72 eV for 6 wt% indium doping from 2.36 eV of that of undoped film. The minimum resistivity achieved in the present study is found to be the lowest among the reported values for In-doped CdO films prepared by spray pyrolysis method. 相似文献
11.
Electroresistance (ER) effects were investigated for a full series of manganite ceramics La1−xCaxMnO3 (0<x<1), synthesized by solid state reaction. The results indicate that while the ER effects are large only in the presence of electrically active, high E-field boundaries, the equilibrium or metastable electronic-magnetic states in the adjoining domains are also significant, as a large ER occurs only at x=0.51 and x=0.17; those compositions are both near a two-phase coexistence region, i.e. close to a compositional regime where equilibrium insulating/metallic phase domains and interfaces would occur spontaneously. 相似文献
12.
The nanocrystalline materials with the general formula Bi85Sb15−xNbx (x=0, 0.5, 1, 2, 3) were prepared by mechanical alloying and subsequent high-pressure sintering. Their transport properties involving electrical conductivity, Seebeck coefficient and thermal conductivity have been investigated in the temperature range of 80-300 K. The absolute value of Seebeck coefficient of Bi85Sb13Nb2 reaches a maximum of 161 μV/K at 105 K, which is 69% larger than that of Bi85Sb15 at the same temperature. The power factor and figure-of-merit are 4.45×10−3 WK−2m−1 at 220 K and 1.79×10−3 K−1 at 196 K, respectively. These results suggest that thermoelectric properties of Bi85Sb15 based material can be improved by Nb doping. 相似文献
13.
T. Liang M. Nakajima K. Kihou Y. Tomioka T. Ito C.H. Lee H. Kito A. Iyo H. Eisaki T. Kakeshita S. Uchida 《Journal of Physics and Chemistry of Solids》2011,72(5):418-419
Single crystals of underdoped Ba(Fe1−xCox)2As2 were detwinned by applying uniaxial pressure. The anisotropic in-plane resistivity was measured using the Montgomery method without releasing pressure. The resistivity along the a-axis shows metallic behavior down to 5 K, while the resistivity along the b-axis shows an insulator-like behavior in some temperature range. Annealing the sample radically reduces the residual resistivity for x=0, and at the same time the anisotropy becomes much smaller at low temperatures. 相似文献
14.
The well known phenomenon of the increase of Tc of YBCO after slow cooling or low temperature annealing without change of the oxygen content, was found also for the YBCO like tetragonal superconductors of (CaxLa1−x)(LauBa1−u)2Cu3Oy (this compound has been previously denoted as CLBLCO, CLBCO or CaLaBaCuO). It has been observed at 150 and 100 °C for oxygen underdoped, optimally- and overdoped ceramics. The products retain their tetragonal unit cells. The possible reasons of this phenomenon are discussed. 相似文献
15.
Sung-Ho Han Falah S. Hasoon Allen M. Hermann 《Journal of Physics and Chemistry of Solids》2005,66(11):1895-1898
Spectroscopic ellipsometry measurements of CuInSe2 (CIS) and CuIn1−xGaxSe2 (CIGS) over a range of Cu compositions reveal that there are important differences in electronic and optical properties between α-phase CIS/CIGS and Cu-poor CIS/CIGS. We find a reduction in the imaginary part of the dielectric function ?2 in the spectral region, 1-3 eV. This reduction can be explained in terms of the Cu-3d density of states. An increase in band gap is found for Cu-poor CIS and CIGS due to the reduction in repulsive interaction between Cu-3d and Se-4p states. We also characterize the dielectric functions of polycrystalline thin-film α-phase CuIn1−xGaxSe2 (x=0.18 and 0.36) to determine their optical properties and compare them with similar compositions of bulk polycrystalline CuIn1−xGaxSe2. The experimental results have important implications for understanding the functioning of polycrystalline optoelectronic devices. 相似文献
16.
Highly oriented (100) thin films of LaVO3 and La1−xSrxVO3 have been fabricated by pulsed laser deposition in a reducing atmosphere. The films show a transition from insulating to metallic behaviour in the composition region of x, 0.175<x<0.200. In the single crystals of the antiferromagnetic insulating phase, a first-order structural phase transition is observed few degrees below the magnetic transition, which manifests itself as a kink in the temperature dependence of resistivity. In the highly oriented thin films of LaVO3 and La1−xSrxVO3 fabricated on lattice matched substrates in this study, the structural phase transformation in the insulating phase has been suppressed. The electrical conduction is found to take place via hopping through localized states at low temperatures. The metallic compositions show a non-linear (T1.5) behaviour in the temperature dependence of resistivity. V (2p) core level spectra of these films show a gradual change in the relative intensities of V3+ and V4+ ions as the value of x increases. 相似文献
17.
S.Y. Wu 《Journal of Physics and Chemistry of Solids》2003,64(12):2365-2368
Raman spectra of Ba6−3xSm8+2xTi18O54 solid solution were investigated as the function of x and sintering time. Reasonable explanations were provided about the Raman shifts and their intensities at 1013, 590, 751, 280, 232 cm−1. 1013 cm−1 demonstrates the existence of BaCO3 phase in solid solution, 590 cm−1 is the symmetric stretching mode of the basal oxygens of the octahedral; 280 and 232 cm−1 are the symmetric stretching modes resulted from the tilt of octahedral when large cation sites are Sm3+ and Ba2+. The shoulder peak appearing around 302 cm−1 is related to the vacancy produced by the unequal valence of Sm3+ and Ba2+. 相似文献
18.
Sven-Ulf Weber Thorsten M. Gesing Götz Eckold Reinhard X. Fischer Fred-Jochen Litterst Klaus-Dieter Becker 《Journal of Physics and Chemistry of Solids》2014
The Bi2(FexGa1−x)4O9 oxide solid solution possessing a mullite-type structure has been investigated by 57Fe Mössbauer spectroscopy in dependence of composition (0.1≤x≤1) and temperature (293≤T/K≤1073). The spectra have been fitted with two doublets for tetrahedrally and octahedrally coordinated high-spin Fe3+ ions, respectively. The experimental areas of the subspectra were used to determine the distribution of iron on the two inequivalent structural sites. The fraction of iron cations occupying the octahedral site is found to increase with decreasing Fe content and the cation distribution is almost independent of temperature. The unusual temperature dependence of the quadrupolar splitting, QS, observed for the octahedral site with dQS/dT>0 is discussed in connexion with structural data for Bi2Fe4O9. The temperature dependence of Mössbauer isomer shifts and signal intensities is examined in the context of local vibrational properties of iron on the two inequivalent sites of the mullite-type lattice structure. 相似文献
19.
20.
Toshimitsu Kanai 《Journal of Physics and Chemistry of Solids》2003,64(3):391-397
We have prepared a series of (PLZT)x(BiFeO3)1−x transparent thin films with thickness of 300 nm by a thermal pyrolysis method. Only films with x≦0.10 formed a single phase of perovskite structure. The film where x=0.10 exhibited both ferromagnetic and ferroelectric properties at room temperature with spontaneous magnetization and coercive magnetic fields of 0.0027μB and 5500 G, respectively. The remanent electric polarization and coercive electric field for the film where x=0.10 were 3.0 μC/cm2 and 24 kV/cm, respectively. Additionally, films with 0.02≦x≦0.10 showed both magneto-optical effects and the second harmonic generation of transmitted light. 相似文献