紫激光作用下四甲基硅的MPI和硅原子的(1+1)电离

本文利用平行板电极装置及飞行时间质谱仪相结合的方法对四甲基硅进行了多光子电离光谱及飞行时间质谱的研究得到了激光激发波长在390.6nm处硅原子的一个单光子共振峰,获得了该分子在这个波长点处的飞行时间质谱,并据此讨论了四甲基硅MPI可能的机理.     

CH3I分子在440—510nm激光作用下多光子电离

利用飞行时间质谱仪研究了CH₃I分子在440—510nm波段的多光子电离(MPI)机理.在该波段，CH₃I分子吸收三光子激光能量与(5pπ,6p)里德伯态高频端发生共振，然后继续吸收光子电离解离成最终产物离子. 关键词：     

410～355 nm内四甲基硅的多光子解离和电离研究

利用平行板电极装置研究了四甲基硅在410～378 nm内的MPI光谱;利用TOF质谱仪研究了该分子在402～371 nm内若干个波长点处的TOF质谱;利用四极质谱装置研究了它在355 nm处的MPI质谱.测得了355 nm下Si(CH3)+n(n=1,2,3,4)及Si+的激光光强指数,以及其信号强度占总信号强度的分支比随光强的变化关系.据此,讨论了该分子MPI过程的可能通道,得出了Si+主要来自于母体分子的多光子解离-硅原子的电离、Si(CH3)+n(n=1,2,3)主要来自于Si(CH3)n(n=1,2,3)的自电离、Si(CH3)+4来自于母体分子的(3+1)电离的结论.     

光化学还原-硅钼蓝分光光度法测定硅的研究

用紫外可见分光光度计,气相色谱仪,光化学反应箱和反应皿,以及阳光、铟灯、荧光高压汞灯、紫外灯等光源,研究了β硅钼黄-乙醇溶液体系的光化学还原反应,并建立了光化学还原-硅钼蓝分光光度测硅法。研究表明,发生该反应的光的有效波长460nm;乙酸、丙酮、苯酚等不能,而其他水溶性的醇、醛、羧酸、醚、酯存在能导致该反应的发生;在0.8—2mol/L盐酸或0.4—1mol/L硫酸或1—3mol/L高氯酸、0.32%—0.48%的钼酸铵、4%—10%的乙醇中,≤8mg/L SiO_2的/β硅钼黄溶液光照10min就能定量还原成硅钼蓝;还原产物稳定,最大吸收波长为810nm,ε_(800)=2.7×10~4L·mol~(-1)·cm~(-1);分析微量二氧化硅S≤0.012%、RSD≤1.3%。初步探讨,乙醇与硅钼黄形成了电子给予体-接受体配合物(DAC),光照反应后有乙酸产生。     

多孔硅的不同制备方法及其光致发光

目前，多孔硅的制备方法已有许多种。我们用电化学方法、光化学方法和化学方法分别制备出了室温下在可见光区发射光荧光的多孔硅。通过对实验装置、制备条件、样品的成膜过程及其光致发光(PL)光谱的比较，分析解释了其成膜机理和PL光谱的特点。认为虽然这三种方法都可以制备出多孔硅，但相比较而言，通过电化学方法制备的样品最均匀、实验的可重复性较强、因而电化学方法是被普遍采用的一种方法。另外在多孔硅的成膜过程中，自由载流子起着至关重要的作用。     

430-490nm激光作用下CH_3I分子的多光子电离离解研究

利用飞行时间质谱仪研究了CH3I分子在 4 30～ 4 90nm激光作用下的多光子电离 (MPI)离解过程和机制。得到了分子的飞行时间质谱 ,从整个实验波段 4 30～ 4 90nm的MPI离子谱发现 ,短波的MPI离子谱峰相对较高 ,长波的MPI离子谱峰相对较宽而弥散。对MPI离子谱中的一些共振峰标识为分子的 ( 5pπ ,8s) ,( 5pπ ,6p)以及 ( 5pπ ,7s)里德堡态共振吸收峰。还标识了 ( 5pπ ,7s)里德堡态的系列振动模。在短波段CH3I分子为 ( 3+1)多光子过程 ,长波段为 ( 2+2 )多光过程。     

外调制光纤CATV中SBS与MPI的激光器高频微扰抑制理论分析

受激布里渊散射(SBS)与多径干涉噪音(MPI)是光纤AM-CATV外调制传输系统中主要的非线性现象,本文分析了激光器高频扰动抑制SBS与MPI的原理,导出了扰动对系统SBS阈值提高量及MPI抑制程度的理论公式,通过对扰动引起的激光器频率啁啾及附加强度调制而导致的色散的理论分析与计算,得到了扰动信号频率及幅度的选取原则。     

MC程序并行设计及提高加速比措施

MC程序的并行设计涉及算法及模块划分,它直接关系到并行加速效率的高低,中子－γ耦合输运蒙特卡罗程序MCNP经过行改造,实现了PVM和MPI两种系统下的并行化,由于作了模块化设计,并行加速效率极佳,PVM版和MPI版并行程序在多个处理器下的加速比均呈线性增长,相比PVM,MPI的适应性列强,多数情况下其效率高于OPVM,并行MCNP程序的计算结果可靠,MPI并行程序在16、32和64个处理器上的并行效率分别达到99％、97％和89％。     

Damage induced by femtosecond laser in optical dielectric films

Both the nature of avalanche ionization （AI） and the role of multi-photon ionization （MPI） in the studies of laser-induced damage have remained controversial up to now. According to the model proposed by Stuart et al., we study the role of MPI and AI in laser-induced damage in two dielectric films, fused silica （FS） and barium aluminum borosilicate （BBS）, irradiated by 780-nm laser pulse with the pulse width range of 0.01 - 5 ps. The effects of MPI and initial electron density on seed electron generation are numerically analyzed. For FS, laser-induced damage is dominated by AI for the entire pulse width regime due to the wider band-gap. While for BBS, MPI becomes the leading power in damage for the pulse width T less than about 0.03 ps. MPI may result in a sharp rise of threshold fluence Fth on r, and AI may lead to a mild increase or even a constant value of Fth on r. MPI serves the production of seed electrons for AI when the electron density for AI is approached or exceeded before the end of MPI. This also means that the effect of initial electron can be neglected when MPI dominates the seed electron generation. The threshold fluence Fth decreases with the increasing initial electron density when the latter exceeds a certain critical value.     

基于SOM和PSO的云计算异构资源聚类MPI并行算法

针对云计算环境下大量用户请求同时到来造成的短暂峰值,使得用户的QOS服务需求不能得到有效保证,设计了一种基于MPI并行计算模型和SOM的异构资源聚类方法;首先,设计了一种改进的MPI的树状层次结构模型,然后,定义了基于SOM自组织映射的资源聚类算法,为了提高资源聚类精度,将PSO算法用于SOM的参数优化中,使得SOM在初始时刻就具有一个较好的连接结构;最后,为了充分满足用户请求的QOS需求,将MPI树状层次结构与基于PSO的SOM资源聚类算法相结合,并提出了具体的基于MPI的SOM资源聚类算法;为了验证文中方法,在Matlab仿真环境中进行测试,实验结果表明文中方法聚类精度为100%,且与其它方法比较,具有较高的聚类精度和较少的执行时间,是一种云计算环境下的可行资源聚类方法。     

Epitaxial growth of non-c-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) substrates

Epitaxial SrBi₂Ta₂O₉ (SBT) thin films with well-defined (116) orientation have been grown by pulsed laser deposition on Si(100) substrates covered with an yttria-stabilized ZrO₂ (YSZ) buffer layer and an epitaxial layer of electrically conductive SrRuO₃. Studies on the in-plane crystallographic relations between SrRuO₃ and YSZ revealed a rectangle-on-cube epitaxy with respect to the substrate. X-ray diffraction pole figure measurements revealed well-defined orientation relations, viz. SBT(116)SrRuO₃(110)YSZ(100)Si(100), SBT[110]SrRuO₃[001], and SrRuO₃[111]YSZ[110]Si[110].     

Atomic Diffusion in Cu/Si （111） and Cu/SiO2/Si （111） Systems by Neutral Cluster Beam Deposition

The Cu films are deposited on two kinds of p-type Si （111） substrates by ionized duster beam （ICB） technique. The interface reaction and atomic diffusion of Cu/Si （111） and Cu/SiO2/Si （111） systems are studied at different annealing temperatures by x-ray diffraction （XRD） and Rutherford backscattering spectrometry （RBS）. Some significant results are obtained： For the Cu/Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230℃. The diffusion coefficients of the samples annealed at 230℃ and 500℃ are 8.5 ×10^-15 cm^2.s^-1 and 3.0 ×10^-14 cm^2.s^-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2//Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450℃. The diffusion coefficients of Cu in Si are calculated to be 6.0 ×10^-16 cm^2.s^-1 at 450℃, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.     

The effect of different ambient gases, pressures, and substrate temperatures on TiO2 thin films grown on Si(100) by laser ablation technique

Pure titanium dioxide (TiO₂) thin films were deposited on single-crystal Si(100) substrates by laser ablation. We investigated the effects of ambient gas (O₂ or Ar), pressures, and substrate temperatures on film quality. From the annealing experiment of the deposited TiO₂ thin film under Ar or O₂ ambient gas, we see the chemical effect of ambient gas on film quality. The crystallinity of the deposited TiO₂ thin film is best at 700 °C in the substrate temperature range attempted, 400-700 °C, and at pressures of 0.1 Torr and below. The rutile phase is dominant under most experimental conditions. Only under very extreme conditions did we obtain a thin film of the anatase phase.     

Si nanocrystallites in SiO2 with intense visible photoluminescence synthesized from SiOx films deposited by laser ablation

We observed very intense and highly reproducible photoluminescence (PL) spectra for SiO_x films obtained by laser ablation of Si targets in 50-mTorr oxygen gas followed by proper annealing. It was found that the PL peak continuously changes from 1.4 eV at the center of the samples to 1.8 eV at the sample edge. The optimum values of the oxygen component in SiO_x was x=1.3-1.4 and the optimum annealing temperature was 1000 °C for intense PL. From transmission electron microscopy images of annealed films, Si nanocrystallites are found to be formed in the matrix of SiO₂ grown from the SiO_x and have diameters of 2-3 nm. These indicate that a high density of Si nanocrystallites with diameters of 2-3 nm in the SiO₂ phase are probably responsible for the PL and that the Si nanostructure is well formed from the as-deposited, metastable SiO_x (x=1.3-1.4) films by annealing at 1000 °C.     

Laser ablation of YBa2Cu3O7-x: the wavelength dependence

Formation mechanisms of atomic and oxide ions in a plume (laser-induced plasma) produced by the laser ablation of a YBa₂Cu₃O_7-x (YBCO) target was studied by time-of-flight (TOF) analysis. The dependence of the TOF spectra on the laser wavelengths (266 nm and 1064 nm) was examined to elucidate photochemical phenomena in the plume. Significant changes in the relative enrichment of metal oxide and oxygen ions as well as their TOF distributions were observed by the injection of an oxygen jet to the plume, which induces reactive scattering of the YBCO plume and the oxygen jet.     

Preparation, IR spectroscopy, and time-of-flight mass spectrometry of halogenated and methylated Si(111)

The preparation of chlorine-, bromine-, and iodine-terminated silicon surfaces (Si(111):Cl, Br, and I) using atomically flat Si(111)-(1×1):H is described. The halogenated surfaces were obtained by photochemically induced radical substitution reactions with the corresponding dihalogen in a Schlenk tube by conventional inert gas chemistry. The nucleophilic substitution of the Si-Cl functionality with the Grignard reagent (CH₃MgCl) resulted in the unreconstructed methylated Si(111)-(1×1):CH₃ surface. The halogenated and methylated silicon surfaces were characterized by Fourier transform infrared (FTIR) spectroscopy and laser-induced desorption of monolayers (LIDOM). Calibration of the desorption temperature via analysis of time-of-flight (TOF) distributions as a function of laser fluence allowed the determination of the originally emitted neutral fragments by TOF mass spectrometry using electron-impact ionization. The halogens were desorbed atomically and as SiX _n (X = Cl, Br) clusters. The methyl groups mainly desorbed as methyl and ethyl fragments and a small amount of ⁺SiCH₃.     

X-Ray Photoelectron Spectroscopy and Reflection High Energy Electron Diffraction of Epitaxial Growth SiC on Si（100） Using C60 and Si

The formation of silicon carbide upon deposition of C60 and Si on Si（100） surface at 850^o C is studied via x-ray photoelectron spectroscopy and reflection high energy electron diffraction （RHEED）. The C ls, O ls and Si 2p core-level spectra and the RHEED patterns indicate the formation of 3C-SiC.     

Pulsed KrF laser deposited GaN/TiN/Si(111) heterostructures by sequential TiN and liquid Ga laser ablation

GaN/TiN heterostructures were deposited on 4° miscut Si(111) substrates by pulsed KrF laser ablation of TiN through vacuum, followed by reactive pulsed KrF laser ablation of liquid Ga through 70-75 mTorr of microwave-activated NH₃. Deposition temperatures of 950 °C and 1050 °C were employed for the TiN layer while 900 °C was employed for the GaN layer. The targets were positioned 5 cm from the substrate and ablated by using a reimaging beamline at a nominal energy density of 3-4 J/cm². X-ray diffraction (XRD) revealed a highly textured heterostructure with GaN(0001)//TiN(111)//Si(111) and with a rocking curve width for both GaN(0001) and TiN(111) equal to ~1.1°. The mosaic spread through the TiN(001) reflection was ~1.3°, whereas that of the GaN(101_1) was undetectable because of low S/N. Scanning electron microscopy revealed large oriented 10 7m-sized hexagonal crystallites decorating large depressions in the TiN film with many smaller pits also present. The effect of substrate processing and TiN film processing on pit formation was explored.     

静高压下非晶(Fe0.99,Mo0.01)78Si9B13合金晶化过程的热力学研究

 在600~930 K，常压到7 GPa的范围内，对非晶(Fe_0.99,Mo_0.01)₇₈Si₉B₁₃合金等温等压退火30 min。实验表明：其晶化产物α-Fe(Mo, Si)、Fe₃B和Fe₂B相的析出与所加压力密切相关。压力使非晶(Fe_0.99,Mo_0.01)₇₈Si₉B₁₃合金的晶化温度和亚稳Fe₃B相的析出温度下降，在一定的压力和温度下，亚稳Fe₃B相将向稳定Fe₂B相转变，其转变温度随压力而变化。还对非晶(Fe_0.99,Mo_0.01)₇₈Si₉B₁₃合金的晶化和亚稳Fe₃B到稳定Fe₂B转变的热力学机制进行了讨论，并给出Fe₃B向Fe₂B的相转变方程。