变截面超音速汽液两相流升压过程的研究

本文针对超音速汽液两相流在变截面通道中的升压过程进行了实验研究,得到了变截面混合腔中超音速汽液两相流的压力变化规律,通过实验结果的分析得出了变截面混合腔中的渐缩部分的压力分布与出口压力无关、变截面通道的渐扩部分为一个单相流体扩压管、压力突变发生在变截面混合腔喉部和随着出口压力升高而激波强度增大、变截面超音速汽液两相流升压技术具有定流量特征等结论。     

膜换湿过程热质耦合的分析与模拟

从理论上分析了膜换湿过程中传质过程和传热过程之间的耦合关系,建立了相应的物理数学模型,发展了一种计算热质耦合的方法。分析结果表明传质过程对传热过程的影响主要体现在两方面:一是质量流携带的焓对传热过程的影响,二是吸附和脱附产生的吸附热对传热过程的影响。而传热过程对传质过程的影响主要体现在温度对膜湿阻的影响。采用数值模拟的方法对热质耦合过程进行了研究,结果表明:当热流与质量流方向相同时,热阻随湿度差的增大显著增大,而当热流与质量流方向相反时,热阻随湿度差的增大显著变小,而膜两侧湿度差对湿阻基本无影响。温度的升高会显著增大传质通量,同时降低湿阻,从而使得热流密度和热阻也受到显著的影响。     

纳米结构影响沸腾换热特性的分子动力学模拟

采用分子动力学方法模拟液体在纳米结构表面的快速沸腾过程.主要研究了纳米结构表面粗糙度以及栏栅形和棋盘形两种排列方式对液体快速沸腾过程以及换热特性的影响.研究结果表明,随着纳米结构表面粗糙度的增加,栏栅形和棋盘形纳米结构表面液体沸腾起始时间均提前.当栏栅形和棋盘形纳米结构表面粗糙度相同时,棋盘形纳米结构表面会进一步缩短液体沸腾起始时间.形成这种现象的原因是纳米结构表面粗糙度的增加,增加了固液接触面积,提高了初始时刻热通量,减小了固液界面热阻,导致表面附近液体动能增大,增大了液体高度方向的温度梯度,有利于液体发生沸腾.当纳米结构表面粗糙度相同时,棋盘形纳米结构表面具有较小的界面热阻,从而缩短了沸腾所需要的时间.     

基于喷嘴喉部参数计算的喷射器理论模型修正

考虑喷嘴渐扩段工质流动损失,对以喷嘴喉部参数为中间计算步骤的缩放型喷嘴喷射器理论模型进行修正,采用公开发表文献上的实验数据对修正模型进行了验证,分析了工况条件和工质种类对渐扩段等熵效率的影响。结果显示,修正模型计算的喷射器引射率更接近文献实验数据,工质为R141b、R245fa、R134a时,最小误差分别为0.37%、-0.71%、-1.49%;修正模型渐扩段等熵效率同时受工况条件和工质性质的影响,工质为R141b时,渐扩段等熵效率的取值随工作流体温度增加而增大,随引射流体温度的增加而减小;工质为湿工质时,喷嘴渐扩段等熵效率应取较小值。     

倾斜角度对平板热管性能影响的实验研究

本文设计并制作了一种具有深微槽道结构的铜-水平板热管,系统地研究了放置方式对其传热性能的影响。实验测试了不同热流密度、不同倾角下热管正常工作时的稳态温度分布和热阻。结果表明,热管热阻随倾斜角度单调增大。这是因为随着倾角的增加,重力与工质回流方向不一致,重力阻碍了工质的回流起到了作用,所以热管的均热性能下降,热阻增大。水平放置时,热管表现出最佳的工作性能和最小的热阻。     

微通道内给定壁面热流的气体换热研究

本文利用实施给定热流边界条件的DSMC方法,对短通道内给定壁面热流边界条件下的气体换热情况进行了模拟.结果表明,壁面热流密度增大导致通道内压力分布非线性程度增加.随着热流密度的增大,截面速度分布趋于平缓,滑移速度增大.给定热流密度的通道壁面温度与气流截面平均温度的差值沿程增大,温度梯度沿程下降,气体稀薄性增大时,通道换热减弱.     

热流密度及充灌率对板式蒸发器环路热管运行特性影响的实验研究

本文实验研究了不同热流密度对板式蒸发器环路热管系统运行特性的影响,同时研究了充灌率对蒸发器上盖板温度及系统热阻的影响。结果表明:此板式蒸发器环路热管系统在0.2～1 W/cm~2热流密度范围内均可稳定运行,蒸发器整体温度随着热流密度的增加而升高,热阻随热流密度的增加而降低;实验条件下,充灌率为55%时,系统蒸发器上盖板温度及热阻达到最低值,此时系统的传热能力达到最强,系统的最优充灌率为55%。     

纳米通道内液体流动的分子动力学研究

本文采用分子动力学方法模拟液体在定截面及变截面纳米通道内的三维Poiseuille流动,研究液体浸润性及通道截面变化对纳米通道内液体流动的影响.研究结果表明:液体对壁面不湿润时,壁面处有速度滑移存在,并且随接触角的增大而增大,液体对壁面湿润则不存在速度滑移;同时,摩擦阻力系数随接触角的减小而增大.通道截面形状的变化对流场的影响随着远离变截面位置而迅速减弱,对流体通道平直处的流体速度相对值分布影响不大,对摩擦阻力系数影响较大.     

高热流密度均温板的传热特性实验研究

针对目前严峻的电子组件散热形势,制造了高热流密度传热组件-均温板,并对其传热特性进行了研究.实验表明该均温板可承受非常高的热流密度.当加热功率达到170W时,热流密度超过了40W/cm2,均温板的上底面最高温度不超过85℃,从而表现出良好的均温和散热特性.热阻随加热功率的增大而减小,并逐渐趋于平缓.     

基于多块格子Boltzmann方法模拟接触热阻

本文基于OpenMP并行语言,采用拼接式的多块格子Boltzmann方法研究了接触压力、粗糙度、间隙介质导热系数对接触热阻的影响规律。结果表明:铝之间的接触热阻随着接触压力的增加而降低,随着粗糙度的增加而增加;当块体气凝胶之间的间隙填充空气时,气凝胶之间的接触热阻随压力的增加变化不大;而当气凝胶间隙趋于真空时,接触热阻随压力的增大而降低;间隙介质的气体导热对于接触热阻起着关键的作用,在低接触压力时。气凝胶间隙趋于真空时的接触热阻是填充空气的大约50倍。     

基于热量流法的超临界CO2换热器性能分析

本文基于热量流法,应用进口温差定义的换热器通用热阻,采用分段法考虑超临界CO2的物性变化,结合能量守恒方程,构建了超临界CO2-冷却水换热过程的整体热量流拓扑模型,结合超临界CO2物性库和经验关联式提出了换热器性能分析的流程图,实现了综合考虑物性-结构-运行参数的超临界CO2-冷却水换热器的性能分析,进一步结合(积)耗...     

Peculiarities of nucleation and propagation of the normal phase in HTSC materials with an YBCO film layer

The peculiarities of nucleation and the evolution mechanisms of the normal phase as an alternating current passes through a strip YBCO-based HTSC wire in liquid nitrogen are studied experimentally. It is found that depending on the properties and structure of the substrate of the HTSC strip, the evolution of the normal phase is governed by different mechanisms. For a high thermal conductivity along the conductor and intense heat removal to the coolant, the entire sample passes from the superconductive to the resistive state. Upon an increase in the current, its resistance increases and approaches the resistance of the substrate. For materials with a high-resistivity substrate (i.e., with a low thermal conductivity), the nucleation of the normal phase occurs in regions with the smallest superconducting parameters. In these regions, the resistive state is unstable, part of the sample passes after a certain time to the normal state, and the remaining part returns to the superconductive state. A normal domain is formed. The domain size increases linearly with the voltage. It is found that the region of (and the reason for) domain nucleation depends on the extent to which the current exceeds the critical value. If the excess is small, the resistive state exists for a few periods of the alternating current. In this case, the sample temperature increases from period to period, and a normal domain appears in the region of the conductor with a lower superconducting transition temperature. If, however, the resistive state exists during a time interval shorter than a quarter of a period, a normal domain appears in the region with a lower critical current. It is found that upon a jumpwise variation of the applied voltage, several domains can be formed, and for a certain value of the voltage jump, the domain passes to an unstable state and starts moving with a velocity of about 1 mm/s from the sample periphery to the center. The potential and temperature profiles of a normal domain are obtained experimentally. It is found that the maximal temperature increases monotonically with the applied voltage, and the temperature gradient at the domain boundary along the strip is about 100 K/mm. It is shown that the stabilized parameters of the domain and I–V branches occurring during its nucleation are successfully described by the heat balance equation for the stationary case.     

Low-temperature anisotropy of the thermal conductivity of single-crystal nanofilms and nanowires

The effect of phonon focusing on the phonon transport in single-crystal nanofilms and nanowires is studied in the boundary scattering regime. The dependences of the thermal conductivity and the free path of phonons on the geometric parameters of nanostructures with various elastic energy anisotropies are analyzed for diffuse phonon scattering by boundaries. It is shown that the anisotropies of thermal conductivity for nanostructures made of cubic crystals with positive (LiF, GaAs, Ge, Si, diamond, YAG) and negative (CaF₂, NaCl, YIG) anisotropies of the second-order elastic moduli are qualitatively different for both nanofilms and nanowires. The single-crystal film plane orientations and the heat flow directions that ensure the maximum or minimum thermal conductivity in a film plane are determined for the crystals of both types. The thermal conductivity of nanowires with a square cross section mainly depends on a heat flow direction, and the thermal conductivity of sufficiently wide nanofilms is substantially determined by a film plane orientation.     

Spontaneous formation of single crystal ZnO nanohelices

This paper reports a novel helix-like ZnO nanostructure with several tens of nanometres in thickness synthesized on a gold-coated Si substrate by thermal evaporation of zinc sulfide powder at 1020°C. Transmission electron microscope characterization shows that as-synthesized ZnO nanohelices extend along [01\bar 11] direction and the axial direction of the helix is along [0001] direction. A catalyst-intervened dislocation-induced growth mechanism has been suggested to explain the formation of the helix-like ZnO nanostructures. This study opens a new route to construct helix-like ZnO nanostructures by different evaporation sources.     

功率效应对功率LED热阻的影响

分析比较了在不同输入功率条件下1 W GaN基LED样品的热学特性,得出了有效热阻随加载功率的变化规律。基于瞬态热测试方法,讨论了结-环境热阻与输入功率之间的关系。加载电流为100~500 mA的区域随着电功率增加,有效热阻明显降低;当电流增至500 mA以上时,有效热阻减小幅度越来越小;而当加载电流为900~1 650 mA时,结-环境的热阻随着电功率的增加而缓慢升高。随着注入电功率的增加,在不同电流区域同一个样品的热阻变化趋势却是相反的,这个现象归因于串联电阻热耦合随输入功率的变化。该结果对分析功率型LED热特性具有一定参考价值。     

Periodic composites: quasi-uniform heat conduction,Janus thermal illusion,and illusion thermal diodes

Manipulating thermal conductivities at will plays a crucial role in controlling heat flow. By developing an effective medium theory including periodicity, here we experimentally show that nonuniform media can exhibit quasi-uniform heat conduction. This provides capabilities in proposing Janus thermal illusion and illusion thermal rectification. For the former, we study, via experiment and theory, a big periodic composite containing a small periodic composite with circular or elliptic particles. As a result, we reveal the Janus thermal illusion that describes the whole periodic system with both invisibility illusion along one direction and visibility illusion along the perpendicular direction, which is fundamentally different from the existing thermal illusions for misleading thermal detection. Further, the Janus illusion helps to design two different periodic systems that both work as thermal diodes but with nearly the same temperature distribution, heat fluxes and rectification ratios, thus being called illusion thermal diodes. Such thermal diodes differ from those extensively studied in the literature, and are useful for the areas that require both thermal rectification and thermal camouflage. This work not only opens a door for designing novel periodic composites in thermal camouflage and heat rectification, but also holds for achieving similar composites in other disciplines like electrostatics, magnetostatics, and particle dynamics.     

考虑界面接触热阻的一维复合结构的热整流机理

建立了考虑变截面、变热导率及界面接触热阻效应的组合热整流结构的温度场及热整流系数的理论模型和有限元解.数值算例证明了本文模型及算法的可靠性,进而通过参数影响研究确定了若干几何及材料参数对结构热整流系数的影响规律,揭示界面接触热阻对热整流效果的影响机理.研究结果表明长度比、截面半径变化率、热导率、边界条件温差和界面接触热阻等因素必须通过优化设计才能得到最大的热整流系数,同时界面接触热阻的引入也为调控热整流系数提供了一条新的途径.     

Heat transfer enhancement in MOSFET mounted on different FR4 substrates by thermal transient measurement

Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistance are the critical parameters that determine the thermal management and reliability in electronics cooling. Metal oxide field effect transistor (MOSFET) is an important semiconductor device for light emitting diode-integrated circuit (LED IC) driver application, and thermal management in MOSFET is a major challenge. In this study, investigations on thermal performance of MOSFET are performed for evaluating the junction temperature and thermal resistance. Suitable modifications in FR4 substrates are proposed by introducing thermal vias and copper layer coating to improve the thermal performance of MOSFET. Experiments are conducted using thermal transient tester (T3ster) at 2.0 A input current and ambient temperature varying from 25 ℃to 75 °C. The thermal parameters are measured for three proposed designs: FR4 with circular thermal vias, FR4 with single strip of copper layer and embedded vias, and FR4 with I-shaped copper layer, and compared with that of plain FR4 substrate. From the experimental results, FR4_I-shaped shows promising results by 33.71% reduction in junction temperature and 54.19% reduction in thermal resistance. For elevated temperature, the relative increases in junction temperature and thermal resistance are lower for FR4_I-shaped than those for other substrates considered. The introduction of thermal vias and copper layer plays a significant role in thermal performance.     

微针肋槽道内去离子水换热特性

设计了槽肋比为1:2和2:1的矩形大长宽比微针肋散热器,并实验研究了去离子水在其内的流动换热性能。结果表明:当进口温度为40 ℃、微针肋槽道在雷诺数小于650、最高壁面温度低于77 ℃时,单位面积散热量可达21.32 W/cm2。当雷诺数一定时,同一个槽道壁面温度沿着流动方向不断增加、同一个位置壁面温度随着加热功率的增加而增大,局部努谢尔数沿着流动方向先减小后逐渐增加并趋于定值。当针肋流动换热长度较长时,其入口效应可以忽略,槽道平均努谢尔数随着雷诺数的增大而增大,与加热功率无关;为了更好地表达微针肋槽道内的换热特性,考虑了槽肋比、流动雷诺数等影响,拟合了去离子水在微针肋槽道内的对流换热关系式。