InSb/CdTe heterostructures grown by MBE

InSb/CdTe heterostructures were grown by MBE, including a 10 layer superlattice. The structures were characterized by X-ray diffraction, van der Pauw measurements, and SNMS depth profiling. The interfaces widen because of interdiffusion and through the formation of an interface compound from the reaction of Te with the InSb surface. The interface compound is identified as strained InTe(II). The interfaces are still too wide for practical devices. Thermochemical analysis indicates that the reaction can be suppressed by applying a Cd overpressure. The diffusion of In and Sb in CdTe is very fast and will necessitate a MEE growth scheme at lower temperatures.     

Novel self-assembled quantum dots in the GaSb/AlAs heterosystem

Novel self-assembled quantum dots (QDs) in the GaSb/AlAs heterosystem were obtained and studied by means of transmission electron microscopy, steady-state and transient photoluminescence. A strong inter-mixing of both III and V group materials results in the fabrication of quaternary alloy QDs in the AlAs matrix. The QDs have atypical energy structure: band alignment of type I with the lowest electronic state at the indirect X minimum of the conduction band.     

Theory on the optical-phonon Raman scattering in GaAs/AlAs heterostructures

A microscopic theory of Raman scattering by optical phonons in GaAs/GaAlAs heterostructures is worked out systematically, on the basis of recent advances in our knowledge of the electronic structure and the optical-phonon modes in superlattices and quantum wells. Theories have shown that specific features of the intermediate states are of special importance for a quantitative theory. Thus, the heavy and light hole mixing effect, and the angular momentum state of the four-component excitons, can play a decisive role in determining the predominant scattering channels. Special attention has been paid to the Frolich-interaction induced scattering, which is dipole forbidden in bulk materials but allowed in multiple quantum wells owing to the barrier penetration and the hole mixing. Based on the microscopic theory, explanations are provided for such experimental facts as the asymmetry between the incoming and the outgoing resonance, the line shape of Raman spectra and the features of two-phonon Raman scattering in quantum well systems.     

Transport relaxation time and quantum lifetime in selectively doped GaAs/AlAs heterostructures

Low-temperature dependences of the transport relaxation time (τ_tr) and quantum lifetime (τ_q) on the density of the two-dimensional electron gas (n _e ) in GaAs quantum wells with AlAs/GaAs lateral superlattice barriers have been studied. An exponential increase in the quantum lifetime with increasing electron density has been observed. It has been shown that the sharp increase in the quantum lifetime correlates with the appearance of X electrons in the AlAs/GaAs lateral superlattice barriers. It has been established that the ratio of the transport relaxation time to the quantum lifetime in the studied structures nonmonotonically depends on the density: the ratio τ_tr/τ_q first increases linearly with n _e and then decreases. This behavior is not described by the existing theories.     

Prediction of high-pressure NaCl-phase of AlP,AlAs and AlSb compounds

The phase transition of AlP, AlAs and AlSb under pressure is studied from the electronic theory of solids by using our presented binding force, which includes mainly covalent interactions in the pseudo-potential formalism and partially ionic interactions. The partially ionic forces bring the essential contributions to the high-pressure phase of AlP, AlAs and AlSb, and stabilize the NaCl-type structure for the high-pressure phase of these compounds, although not reported experimentally. Then, numerical results for the transition pressure, the volume discontinuity, the transition heat and the lattice parameter in NaCl-type lattice of AlP, AlAs and AlSb are predicted theoretically.     

Resonant Raman scattering in nanostructures with InGaAs/AlAs quantum dots

Raman scattering by optical phonons in In_xGa_{1 ? x} As/AlAs nanostructures with quantum dots has been studied experimentally for compositions corresponding to x = 0.3?1 under out-resonance conditions. Features due to scattering by GaAs-and InAs-like optical phonons in quantum dots have been detected, and the phonon frequencies have been determined as a function of the dot composition. With increasing excitation energy, a red shift is observed in the frequency of the GaAs-like phonon in quantum dots, which testifies to Raman scattering selective by the size of quantum dots. Under resonant conditions, multiphonon light scattering by optical and interface phonons is observed up to the third order, including overtones of the first-order phonons of InGaAs and AlAs materials and their combinations.     

InAs/AlSb/GaSb量子阱中的双色光吸收

为了降低噪声对InAs/GaSb量子阱作为双色电探测器性能的影响,设计性能优良的光电探测器,在InAs/GaSb量子阱中加入AlSb夹层,以减少电子和空穴在界面处的复合,从而抑制由于电子和空穴复合引起的噪声。首先应用转移矩阵方法求解薛定谔方程得到量子阱中电子和空穴的能级和波函数,研究AlSb夹层对电子和空穴波函数的影响。应用平衡方程方法求解外加光场条件下的玻尔兹曼方程,研究所有电子和空穴跃迁通道对光吸收系数的贡献,重点研究了AlSb夹层厚度对光吸收系数的影响。结果表明:基于In As/GaSb的量子阱体系可以实现双色光吸收,加入AlSb夹层可以有效抑制电子和空穴在界面处的隧穿,从而降低复合噪声,同时AlSb夹层的加入也对吸收峰有影响。AlSb夹层的厚度达到2 nm即可有效降低电子和空穴复合噪声,双色光吸收峰在中远红外波段,为该量子阱作为性能良好的中远红外光电探测器提供理论支撑。     

Interatomic force constants and lattice vibrations of AlP,AlAs and AlSb

The interatomic force constants and the phonon dispersion curves of AlP, AlAs, and AlSb are obtained from the electronic theory of solids by using our presented binding force, which includes mainly covalent interactions in the pseudopotential formalism and partially ionic interactions. The potential-parameter, effective ionic charge and ionic fraction of AlP and AlAs are estimated from those of AlSb and other III–V tetrahedrally- bonded compounds in spite of no experimental information on the band- calculation and the neutron scattering data of AlP and AlAs. Numerical data for the crystal energy of AlP and AlAs are in good agreement with the observed data, and the obtained results for the phonon dispersion curves and bulk modulus are useful to study the lattice dynamics and anharmonic properties of these compounds.     

Weak Antilocalization Effect in an AlAs/AlGaAs Quantum Well

JETP Letters - Weak antilocalization in a narrow AlAs quantum well containing a two-dimensional electron system with a large effective mass at low temperatures has been studied. Such quantum...     

高灵敏度InAs/AlSb量子阱的霍尔器件(英文)

用分子束外延在Ga As(001)衬底上生长了两个量子阱结构的霍尔器件,一个是没有掺杂的量子阱结构,一个是Si-δ掺杂的量子阱结构。研究了霍尔器件的面电子浓度和电子迁移率与温度的关系。结果表明,在300 K下,Si-δ掺杂的量子阱结构的电子迁移率高达25 000 cm~2·V~(-1)·s~(-1),并且该器件输入电阻和输出电阻较低。同时,Si-δ掺杂的量子阱结构霍尔器件的敏感度好于没有掺杂的量子阱结构霍尔器件。     

Quantum efficiency and overlap integrals in InSb

The paper deals with the problem of the enhanced quantum efficiency in semiconductors. An expression is derived for the spectral dependence of quantum efficiency in InSb in the low energy region. The probabilities both of the primary absorption process and of secondary relaxation processes, i.e. impact ionization (inter-band Auger transitions) and the thermalization of hot electrons, are calculated. The behaviour of overlap integrals in InSb is discussed in connection with these processes. The calculated spectral dependence of the quantum efficiency is compared with the experimental measurements.