Weak antilocalization in HgTe quantum wells near a topological transition

The anomalous alternating magnetoresistivity in HgTe quantum wells with thicknesses of 5.8 and 8.3 nm, i.e., near the transition from the direct band spectrum to an inverted spectrum, has been revealed and analyzed. It has been shown that the revealed anomalous alternating magnetoresistivity in wells with an inverted spectrum is well described by the theory developed by S.V. Iordanskii et al. [JETP Lett. 60, 206 (1994)] and W. Knap et al. [Phys. Rev. B 53, 3912 (1996)]. A detailed comparison of the experimental data with the theory indicates the presence of only the cubic term in the spin splitting of the electronic spectrum. The applicability conditions of the mentioned theory are not satisfied in a well with a direct gap and, for this reason, such a certain conclusion is impossible. The results indicate the existence of a strong spin-orbit interaction in symmetric HgTe quantum wells near the topological transition.     

Surface state charge dynamics of a high-mobility three-dimensional topological insulator

We present a magneto-optical study of the three-dimensional topological insulator, strained HgTe, using a technique which capitalizes on advantages of time-domain spectroscopy to amplify the signal from the surface states. This measurement delivers valuable and precise information regarding the surface-state dispersion within <1 meV of the Fermi level. The technique is highly suitable for the pursuit of the topological magnetoelectric effect and axion electrodynamics.     

Crossover between weak antilocalization and weak localization in a magnetically doped topological insulator

We report transport studies on magnetically doped Bi(2)Se(3) topological insulator ultrathin films grown by molecular beam epitaxy. The magnetotransport behavior exhibits a systematic crossover between weak antilocalization and weak localization with the change of magnetic impurity concentration, temperature, and magnetic field. We show that the localization property is closely related to the magnetization of the sample, and the complex crossover is due to the transformation of Bi(2)Se(3) from a topological insulator to a topologically trivial dilute magnetic semiconductor driven by magnetic impurities. This work demonstrates an effective way to manipulate the quantum transport properties of the topological insulators by breaking time-reversal symmetry.     

Impurity effect on weak antilocalization in the topological insulator Bi2Te3

We study the weak antilocalization (WAL) effect in topological insulator Bi(2)Te(3) thin films at low temperatures. The two-dimensional WAL effect associated with surface carriers is revealed in the tilted magnetic field dependence of magnetoconductance. Our data demonstrate that the observed WAL is robust against deposition of nonmagnetic Au impurities on the surface of the thin films, but it is quenched by the deposition of magnetic Fe impurities which destroy the π Berry phase of the topological surface states. The magnetoconductance data of a 5 nm Bi(2)Te(3) film suggests that a crossover from symplectic to unitary classes is observed with the deposition of Fe impurities.     

Terahertz electron transport in a two-dimensional topological insulator in a HgTe quantum well

The terahertz response of a two-dimensional topological insulator in a HgTe quantum well to radiation with wavelengths of 118 and 184 μm is investigated. It is found that the photoconductivity is rather high (up to a few percent of dark conductivity) and is manifested in both the local and nonlocal responses of the system. This fact proves that the observed photoconductivity is caused by changes in the transport via edge current-carrying states. The sign and nonresonant character of the photoconductivity indicate that it is caused by the heating of electrons in the system. The analysis of experimental results makes it possible to suggest that this heating originates from the Drude absorption of terahertz radiation by metallic “droplets” appearing owing to fluctuations in the impurity potential and the gap and located in direct proximity to edge states.     

Magnetic and topological transitions in three-dimensional topological Kondo insulator

Using an extended slave-boson method,we draw a global phase diagram summarizing both magnetic phases and paramagnetic(PM) topological insulators(TIs) in a three-dimensional topological Kondo insulator(TKI). By including electron hopping(EH) up to the third neighbors, we identify four strong TI(STI) phases and two weak TI(WTI) phases. Then, the PM phase diagrams characterizing topological transitions between these TIs are depicted as functions of EH,f-electron energy level,and hybridization constant. We also find an insulator-metal transition from an STI phase that has surface Fermi rings and spin textures in qualitative agreement with the TKI candidate SmBs. In the weak hybridization regime, antiferromagnetic(AF) order naturally arises in the phase diagrams. Depending on how the magnetic boundary crosses the PM topological transition lines,AF phases are classified into the AF topological insulator(AFTI) and the non-topological AF insulator, according to their Z_2 indices. In two small regions of parameter space, two distinct topological transition processes between AF phases occur, leading to two types of AFTIs showing distinguishable surface dispersions around their Dirac points.     

Spin Hall conductivity in three-dimensional topological insulator/normal insulator heterostructures

In the framework of an effective functional approach based on the k · p method, we study the combined effect of an interface potential and a thickness of a three-dimensional (3D) topological insulator (TI) thin film on the spin Hall conductivity in layered heterostructures comprising TI and normal insulator (NI) materials. We derive an effective two-dimensional (2D) Hamiltonian of a 3D TI thin film sandwiched between two NI slabs and define the applicability limits of approximations used. The energy gap and mass dispersion in the 2D Hamiltonian, originated from the hybridization between TI/NI interfacial bound electron states at the opposite boundaries of a TI film, are demonstrated to change sign with the TI film thickness and the interface potential strength. Finally, we argue that the spin Hall conductivity can efficiently be tuned varying the interface potential characteristics and TI film thickness.     

Ultrashort optical pulse in a thin film of a topological insulator

We consider the propagation of ultrashort optical pulses in a thin film of a topological insulator within the framework of an effective long-wave Hamiltonian for low-temperature media. The electromagnetic field is taken as classical Maxwellian. We reveal the dependence on the maximum amplitude of ultrashort optical pulses.     

Weak antilocalization and interaction-induced localization of Dirac and Weyl Fermions in topological insulators and semimetals

Weak localization and antilocalization are quantum transport phenomena that arise from the quantum interference in disordered metals.At low temperatures,they can give distinct temperature and magnetic field dependences in conductivity,allowing the symmetry of the system to be explored.In the past few years,they have also been observed in newly emergent topological materials,including topological insulators and topological semimetals.In contrast from the conventional electrons,in these new materials the quasiparticles are described as Dirac or Weyl fermions.In this article,we review our recent efforts on the theories of weak antilocalization and interaction-induced localization for Dirac and Weyl fermions in topological insulators and topological semimetals.     

Multiple surface conduction channels via topological insulator and amorphous insulator thin film multi-stacks

Multi-channel Bi₂Se₃ thin films were grown by combining molecular beam epitaxy and atomic layer deposition. High-resolution transmission electron microscope images showed that c-axis oriented Bi₂Se₃ grew on amorphous Al₂O₃ even after multiple stacking. While the surface morphology degraded for the upper layers, each layer was electrically similar. The electrical transport measurements showed that the weak anti-localization effect was quantitatively enhanced upon increasing the number of Bi₂Se₃ channels. Our results provide a promising approach to exploit diverse combinations of layered topological insulator films vertically stacked with amorphous insulator films.     

Photoinduced Weyl semimetal phase and anomalous Hall effect in a three-dimensional topological insulator

Motivated by the fact that Weyl fermions can emerge in a three-dimensional topological insulator on breaking either time-reversal or inversion symmetries, we propose that a topological quantum phase transition to a Weyl semimetal phase occurs under the off-resonant circularly polarized light, in a three-dimensional topological insulator, when the intensity of the incident light exceeds a critical value. The circularly polarized light effectively generates a Zeeman exchange field and a renormalized Dirac mass, which are highly controllable. The phase transition can be exactly characterized by the first Chern number. A tunable anomalous Hall conductivity emerges, which is fully determined by the location of the Weyl nodes in momentum space, even in the doping regime. Our predictions are experimentally realizable through pump-probe angle-resolved photoemission spectroscopy and raise a new way for realizing Weyl semimetals and quantum anomalous Hall effects.     

Bound states induced by a ferromagnetic delta-layer inserted into a three-dimensional topological insulator

We report on theoretical study of the bound electron states induced by a ferromagnetic delta-layer embedded into a narrow-band-gap semiconductor of the Bi₂Se₃-type which is a three-dimensional topological insulator with large spin-orbit coupling. We make use of an effective Hamiltonian taking into account the inverted band structure of the semiconductor host at the ?? point and describe the properties of the in-gap bound states: energy spectrum, characteristic length and spin polarization. We highlight a role of these states for a magnetic proximity effect in digital magnetic heterostructures based on the Bi₂Se₃-type semiconductors.     

Design principles and coupling mechanisms in the 2D quantum well topological insulator HgTe/CdTe

We present atomistic band structure calculations revealing a different mechanism than recently surmised via k · p calculations about the evolution of the topological state (TS) in HgTe/CdTe. We show that 2D interface (not 1D edge) TSs are possible. We find that the transitions from a topological insulator at critical HgTe thickness of n = 23 ML (6.453 [corrected] ?) to a normal insulator at smaller n is due to the crossing between two interface-localized states: one derived from the S-like Γ?(c) and one derived from the P-like Γ?(v) light hole, not because of the crossing of an interface state and an extended quantum well state. These atomistic calculations suggest that a 2D TS can exist in a 2D system, even without truncating its symmetry to 1D, thus explaining the otherwise surprising similarity between the 2D dispersion curves of the TS in HgTe/CdTe with those of the TS in 3D bulk materials such as Bi?Se?.     

Spin-plasmons in topological insulator

Collective plasmon excitations in a helical electron liquid on the surface of strong three-dimensional topological insulator are considered. The properties and internal structure of these excitations are studied. Due to spin-momentum locking in helical liquid on a surface of topological insulator, the collective excitations should manifest themselves as coupled charge- and spin-density waves.     

Electrically pumped terahertz laser based on a topological insulator quantum dot array

The energy level separation between the edge states in topological insulator quantum dots lies in the terahertz(THz) range.Quantum confinement ensures the nonuniformity of the energy level separation near the Dirac point. Based on these features, we propose that a topological insulator quantum dot array can be operated as an electrically pumped continuous-wave THz laser. The proposed device can operate at room temperature, with power exceeding 10 mW and quantum efficiency reaching ~50%. This study may promote the usage of topological insulator quantum dots as an important source of THz radiation.     

Weyl semimetal in a topological insulator multilayer

We propose a simple realization of the three-dimensional (3D) Weyl semimetal phase, utilizing a multilayer structure, composed of identical thin films of a magnetically doped 3D topological insulator, separated by ordinary-insulator spacer layers. We show that the phase diagram of this system contains a Weyl semimetal phase of the simplest possible kind, with only two Dirac nodes of opposite chirality, separated in momentum space, in its band structure. This Weyl semimetal has a finite anomalous Hall conductivity and chiral edge states and occurs as an intermediate phase between an ordinary insulator and a 3D quantum anomalous Hall insulator. We find that the Weyl semimetal has a nonzero dc conductivity at zero temperature, but Drude weight vanishing as T(2), and is thus an unusual metallic phase, characterized by a finite anomalous Hall conductivity and topologically protected edge states.     

Confined states and spin polarization on a topological insulator thin film modulated by an electric potential

We study the electronic structure and spin polarization of the surface states of a three-dimensional topological insulator thin film modulated by an electrical potential well. By routinely solving the low-energy surface Dirac equation for the system, we demonstrate that confined surface states exist, in which the electron density is almost localized inside the well and exponentially decayed outside in real space, and that their subband dispersions are quasilinear with respect to the propagating wavevector. Interestingly, the top and bottom surface confined states with the same density distribution have opposite spin polarizations due to the hybridization between the two surfaces. Along with the mathematical analysis, we provide an intuitive, topological understanding of the effect.     

Quantum Hall effect in a quasi-three-dimensional HgTe film

Magnetotransport of a quasi-three-dimensional (100-nm) HgTe film in quantized magnetic fields has been experimentally investigated. It has been found that the film exhibits pronounced quantization of the Hall resistance accompanied by deep minima of the dissipative resistance. A transition from the three-dimensional behavior of Shubnikov-de Haas oscillations in semiclassical magnetic fields (ω_cτ _q ≤ 1) to a two-dimensional one in the quantum-Hall-effect regime has been discovered. The conduction electron cyclotron effective mass in mercury telluride has been determined from the temperature dependence of the Shubnikov-de Hass oscillations in such magnetic fields.     

Spin-charge separated solitons in a topological band insulator

In this Letter we construct a simple, controllable, two-dimensional model based on a topological band insulator. It has many attractive properties. (1) We obtain spin-charge separated solitons that are associated with dynamic pi fluxes. (2) These solitons obey Bose statistics and their condensation triggers a phase transition from a spin Hall insulator to an easy-plane ferromagnet. (3) It suggests an alternative way to classify the Z2 topological band insulator without resorting to the sample boundary.     

Interacting dirac fermions on a topological insulator in a magnetic field

We study the fractional quantum Hall states on the surface of a topological insulator thin film in an external magnetic field, where the Dirac fermion nature of the charge carriers have been experimentally established only recently. Our studies indicate that the fractional quantum Hall states should indeed be observable in the surface Landau levels of a topological insulator. The strength of the effect will however be different, compared to that in graphene, due to the finite thickness of the topological insulator film and due to the admixture of Landau levels of the two surfaces of the film. At a small film thickness, that mixture results in a strongly nonmonotonic dependence of the excitation gap on the film thickness. At a large enough thickness of the film, the excitation gap in the lowest two Landau levels are comparable in strength.