Anti-Stokes Luminescence in LiYF<Subscript>4</Subscript>:Ho<Superscript>3+</Superscript>, Yb<Superscript>3+</Superscript> Ceramics Excited at 1.93 μm

Conversion of IR radiation of a Tm:YAP laser with a wavelength of 1930 nm into visible light by ceramics of composition LiY_(1–x–y) Ho _x Yb _y , where х = 1–5 mol % and y = 0–15 mol %, is demonstrated. It is shown that the threshold power density of IR light visualization decreases with increasing concentration of Ho³⁺ ions, while additional doping of ceramic samples with Yb³⁺ ions changes the anti-Stokes luminescence spectrum. The threshold power density of visualization of the Tm:YAP laser radiation decreases with increasing concentration of holmium ions and is I_thr ≈ 0.8 W cm^–2 in the samples of composition LiYF₄:5%Ho³⁺–15%Yb³⁺.     

Low-temperature time-resolved VUV luminescence spectroscopy of SrF<Subscript>2</Subscript>: Er<Superscript>3+</Superscript> crystals

Time-resolved excitation and emission spectra of SrF₂: Er³⁺ upon selective excitation with synchrotron radiation in the VUV and ultrasoft x-ray ranges at T = 8 K were studied. The VUV luminescence of SrF₂: Er³⁺ derives from high-energy interconfiguration 4f¹⁰5d-4f¹¹ transitions in the Er³⁺ ion. The VUV emission spectrum revealed, in addition to the 164.5-nm band (millisecond-range kinetics), a band at 146.4 nm (with a decay time of less than 600 ps). The formation of excitation spectra for the f-f and f-d transitions in the Er³⁺ ion is discussed.     

VUV luminescence of Er<Superscript>3+</Superscript> ions in LiYF<Subscript>4</Subscript> and BaY<Subscript>2</Subscript>F<Subscript>8</Subscript> crystals

Vacuum ultraviolet luminescence of Er³⁺ ions in LiYF4 and BaY₂F₈ crystals has been investigated. It is revealed that under excitation by 193 nm radiation from an ArF excimer laser the interconfigurational 5d–4f radiative transitions in Er³⁺ ions are observed. It is shown that from the LiYF₄:Er crystal only the spin-forbidden luminescence (λ = 165 nm) is detected, whereas both the spin-forbidden (λ = 169 nm) and spin-allowed (λ = 160.5 nm) components are observed from the BaY₂F₈:Er crystal.     

Mechanisms of ionization of <Emphasis Type="Italic">F</Emphasis><Subscript>2</Subscript>-centers in laser media on the basis of LiF crystals

F₂ color centers with a superhigh concentration (5000-cm^–1 absorption coefficient at 450 nm) were formed by high-density electron beams in a layer of LiF crystals of micrometer thickness. The F₂-centers excited by high-power nanosecond wide-band optical pulses (the “soft” pumping regime) efficiently amplified the laser radiation and showed high stability under these conditions. A low stability of F₂-centers to laser radiation (the “hard” excitation regime) is explained by the dissociation of (F ₂ ⁺ , F^–) pairs induced by two-step ionization of F₂-centers: (2hν > 4.5 eV) → F₂ → (F₂)* → F ₂ ⁺ + e; F + e → F^–; F ₂ ⁺ + F^– → 3F.     

Local structure of Tm<Superscript>2+</Superscript> and Yb<Superscript>3+</Superscript> impurity centers in <Emphasis Type="Italic">Me</Emphasis>F<Subscript>2</Subscript> (<Emphasis Type="Italic">Me</Emphasis> = Ca,Sr, Ba) fluoride crystals

The local structure of Tm²⁺ and Yb³⁺ cubic impurity centers in MeF₂: Tm²⁺ and MeF₂: Yb³⁺ (Me = Ca, Sr, Ba) fluoride crystals, as well as Yb³⁺ trigonal and tetragonal impurity centers in MeF₂: Yb ³⁺ crystals, is calculated within the shell model in the pair potential approximation.     

Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures

Population inversion of the energy levels of Er³⁺ ions in Si/Si_1?xGe_x:Er/Si (x = 0.28) structures has been achieved due to electron excitation transfer from the semiconductor matrix. An analysis of the photoluminescence kinetics at a wavelength of 1.54 μm shows that up to 80% of the Er³⁺ ions are converted into excited states. This effect, together with the high photoluminescence intensity observed in the structures studied, shows good prospects for obtaining lasers compatible with planar silicon technology.     

Effective excitation cross section and lifetime of Er<Superscript>3+</Superscript> ions in Si: Er light-emitting diodes fabricated by sublimation molecular-beam epitaxy

A series of Si: Er electroluminescent diode structures is fabricated by sublimation molecular-beam epitaxy. The diode structures efficiently emit at a wavelength of 1.5 μm under conditions of p-n junction breakdown at room temperature. The effective cross section of excitation of Er³⁺ ions with hot carriers heated by the electric field of a reverse-biased p-n junction and the lifetime of Er³⁺ ions in the first excited state ⁴I_13/2 are determined for structures that emit in a mixed breakdown mode and are characterized by the maximum intensity and excitation efficiency of the Er³⁺ electroluminescence.     

Spectroscopic study of double sodium-yttrium fluoride crystals doped with erbium Na<Subscript>0.4</Subscript>Y<Subscript>0.6</Subscript>F<Subscript>2.2</Subscript>:Er<Superscript>3+</Superscript>: II. Luminescence self-quenching and microparameters and macrorates of energy transfer

Na_0.4Y_0.6F_2.2:Er³⁺ (NYF:Er³⁺) crystals with an Er concentration up to 15% were grown by the Bridgman-Stockbarger method. The luminescence kinetics was investigated for a series of NYF:Er³⁺ crystals (0.5–15% Er), as well as the concentration and temperature quenching of the luminescence from radiative Er levels upon selective laser excitation. It is shown that the luminescence from the ⁴S_3/2 level is quenched significantly with increasing temperature and concentration. The luminescence from the ⁴G_11/2, ²G(H)_9/2, ⁴F_9/2, and ⁴I_9/2 levels is quenched mainly due to nonradiative multiphonon transitions. The concentration quenching of the luminescence from the ⁴I_11/2 and ⁴I_13/2 levels was not observed. Possible schemes of the self-quenching of excited levels of erbium are considered and the microparameters and macrorates of self-quenching are estimated by model quantum-mechanical calculation. Based on the comparison of the calculated and experimental self-quenching rates, the most probable mechanisms and schemes of self-quenching are determined. The self-quenching of the ⁴S_3/2 level of erbium was investigated experimentally and theoretically. Good agreement is obtained between the experimental and the calculated kinetic curves and the dependences of the self-quenching rates on Er concentration. It is concluded that NYF:Er³⁺ crystals are promising as active media for tunable lasers with laser diode pumping.     

Magneto-optical spectroscopy and optical detection of EPR spectra of Yb<Superscript>3+</Superscript> paramagnetic centers with cubic symmetry in single crystals <Emphasis Type="Italic">Me</Emphasis>F<Subscript>2</Subscript> (<Emphasis Type="Italic">Me</Emphasis> = Cd,Ca, Pb)

Cubic paramagnetic centers formed by Yb³⁺ impurity ions in fluorite-type crystals MeF₂ (Me = Cd, Ca, Pb) have been investigated using electron paramagnetic resonance, magnetic circular dichroism, magnetic circular polarization of luminescence, Zeeman splitting of optical absorption and luminescence lines, and optical detection of electron paramagnetic resonance. The g factors of the ²Γ₇ state in the excited multiplet ² F _5/2 of Yb³⁺ ions in Me F₂ crystals, the hyperfine interaction constant ¹⁷¹ A (¹⁷¹Yb) for the excited multiplet ² F _5/2 in the CaF₂ crystal, and the energies and symmetry properties of all energy levels of Yb³⁺ ions in MeF₂ crystals are determined. The crystal-field parameters for the crystals under investigation are calculated.     

Spectra of optical absorption and energy levels diagram of Er<Superscript>3+</Superscript> ions in bulk crystals of aluminum nitride

The absorption spectra of the Er³⁺ ions embedded in the AlN matrix have been investigated. The admixture of erbium was introduced in bulk AlN crystals by diffusion. The absorption lines, which are associated with the intraconfigurational electronic f–f-transitions from the ground ⁴ I _15/2-state to the levels of ion Er³⁺ excited states have been observed in the spectral range of 370–700 nm. The transitions to the state levels ⁴ F _9/2, ² H _11/2, ⁴ F _7/2, ⁴ F _5/2, ² H _9/2, and ⁴ G _11/2 have been investigated in detail at the temperature T = 2 K. The number of the observed lines for these transitions coincides with the theoretically possible one for the electronic f–f-transitions in the ions Er³⁺, which are in the crystal field with the symmetry below cubic. The narrowness of the observed lines and their number convincingly testify the replacement of preferably one regular crystalline position by erbium ions. The implementation of Er³⁺ in the Al³⁺ position with the local symmetry C _3v appears the most probable. The energy positions of the levels of excited states for the investigated transitions have been determined. The diagram of the Er³⁺ ion energy levels in the AlN crystals has been built.     

Study of absorption spectra of Er<Superscript>3+</Superscript> in KTaO<Subscript>3</Subscript> crystals

The first results of the study of optical absorption spectra of KTaO₃: Er³⁺ crystals are presented. In the 350–660-nm region, lines are observed deriving from intraconfigurational electronic transitions from the ⁴ I _15/2 ground state to levels of the ⁴ F _9/2, ⁴ S _3/2, ² H _11/2, ⁴ F _7/2, ⁴ F _5/2(⁴ F _3/2), ² G _9/2, and ⁴ G _11/2 excited states of the Er³⁺ ions. A comprehensive study of transitions to the ⁴ F _9/2, ⁴ S _3/2, ² H _11/2, and ⁴ F _7/2 levels at 77 K is carried out. The number of lines observed for the above transitions fits the theoretically possible number for ?-? electronic transitions in Er³⁺ ions in the cubic crystal field. In the case of a differently charged substituted ion, this situation occurs only under nonlocal impurity charge compensation. The energies of the excited state levels for the transitions under study are determined.     

Analysis of the gain and luminescence properties of Si/Si<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>G<Subscript>x</Subscript>: Er/Si heterostructures produced by sublimation molecular-beam epitaxy in a gas phase

Si/Si_1?xGe_x: Er/Si structures grown by sublimation molecular-beam epitaxy (SMBE) in a gas phase are studied. These structures are considered possible structures for realizing a Si/Er-based laser. It is shown that SMBE in a gas phase can be applied to create effective light-emitting structures that generate an intense luminescence signal at a wavelength of 1.54 μm. The structures and chemical compositions of the Si/Si_1?xG_x: Er/Si structures, whose parameters are close to those calculated for creating laser-type structures, are examined, and their photoluminescence (PL) spectra and kinetics are studied at 4.2 and 77 K. It is shown that the fraction of Er³⁺ optically active centers in the Si_1?xG_x: Er layers thus grown reaches ～10% of the total erbium-impurity concentration. The optical gains in the active Si_1?xG_x: Er layers at x = 0.1 and 0.02 are estimated to be ～0.03 and ～0.2 cm^?1, respectively. The gain in structures of this type can be significantly increased via the intentional formation of isolated Er³⁺ optically active centers whose PL spectra have a characteristic fine structure.     

Thermal quenching of luminescence of BaY<Subscript>2</Subscript>F<Subscript>8</Subscript> crystals activated with Er<Superscript>3+</Superscript> and Tm<Superscript>3+</Superscript> ions

Thermal quenching of interconfigurational 5d-4f luminescence of Er³⁺ and Tm³⁺ ions in BaY₂F₈ crystals is studied in the temperature range of 330–790 K. The quenching temperatures are ~575 and ~550 K for Er³⁺ and Tm³⁺, respectively. It is shown that quenching of 5d-4f luminescence of Tm³⁺ ions is caused by thermally stimulated ionization of 5d electrons to the conduction band.     

Spectroscopic studies of erbium-doped potassium-lead double chloride crystals KPb<Subscript>2</Subscript>Cl<Subscript>5</Subscript>:Er<Superscript>3+</Superscript>: 1. Optical spectra and relaxation of excited states of the erbium ion in potassium-lead double chloride crystals

Optical spectra, intensities of radiative and nonradiative transitions, and luminescence kinetics in erbium-doped potassium-lead double chloride crystals KPb₂Cl₅:Er³⁺s(KPC:Er³⁺) were investigated. The crystals were grown by the Bridgman-Stockbarger method. Their absorption and luminescence spectra were studied experimentally. The crystal-matrix absorption edge was determined at 80 and 300 K. Intensity parameters, radiative transition probabilities, branching ratios, and nonradiative relaxation rates were estimated by the Judd-Ofelt method. The luminescence kinetics from the emitting levels ⁴ G _11/2, ² G _9/2, ⁴ S _3/2, and ⁴ F _9/2 upon selective excitation was studied.     

Two-step photoconductivity in LiY<Subscript> <Emphasis Type="Italic">x</Emphasis> </Subscript>Lu<Subscript>1 – <Emphasis Type="Italic">x</Emphasis> </Subscript>F<Subscript>4</Subscript>:Ce,Yb crystals

Photoconductivity of LiY_xLu_1–xF₄:Ce,Yb (x = 0–1) crystals is measured under one- and two-step excitation. It is established that the photoconductivity is due to intra-center transitions from excited states of Ce³⁺ ions. The position of the ground 4 f-state of Ce³⁺ ion relative to the bottom of the conduction band is determined. The choice of pumping conditions to obtain the lasing on the 5d–4f transitions of trivalent cerium in these active media is substantiated.     

Light conversion in thin films of a mixture of mesotetraphenylporphyrin and erbium-doped yttrium vanadate crystallites: 2. Optical properties

The optical properties of two-component films composed of mesotetraphenylporphyrin (TPP) and erbium-doped yttrium vanadate Yt_0.95Er_0.05VO₄ prepared by spincoating have been studied for the first time. A decrease in the TPP content in the films leads to a hypsochromic shift of the Soret band peak by 1–9 nm; this finding suggests that the degree of aggregation of TPP decreases with decreasing TPP content in the film. The fluorescence peak of TPP is located at an emission wavelength of λ_em = 634 nm and an excitation wavelength of λ_ex = 420 nm. The fluorescence peaks of Y_0.95Er_0.05VO₄ at λ_em = 526, 546, and 555 nm (λ_ex = 300 nm) correspond to the following transitions of the Er3+ ion: the band at 526 nm, to the ² H _11/2 → ⁴ I _15/2 transition; the bands at 546 and 555 nm, to the ⁴ S _3/2 λ ⁴ I _15/2 transition. The fluorescence band peaks preserve their positions with a change in the ratio of components in the film; that is, the fluorescent characteristics of TPP and Y_0.95Er_0.05VO₄ clusters do not depend on their interaction. For both TPP and Y_0.95Er_0.05VO₄, the maximum fluorescence intensity is observed at a TPP content in the film of 40%; the gain with respect to single-component TPP and Y_0.95Er_0.05VO₄ films is 70 and 4–15%, respectively. In this case, a significant effect is exerted not so much by the nature and structure of the components and their interaction as by the topographic features of organization of the photoactive elements in the film, their ratio, and mutual orientation, which determine the energy capture probability.     

Spectral and luminescence properties of gadolinium gallium garnet epitaxial films doped with terbium

Gadolinium gallium garnet single-crystal films containing terbium are grown through liquid-phase epitaxy from a supercooled solution melt in the PbO-B₂O₃ system. The optical absorption spectra in the wavelength range 0.2–10.0 μm and the luminescence spectra excited by synchrotron radiation with energies in the range 3.5–30.0 eV are investigated at temperatures of 10 and 300 K. It is revealed that the optical absorption spectra contain an absorption band with the maximum at a wavelength λ ≈0.260 μm, which corresponds to the spin-allowed electric dipole transition between the electronic configurations 4f ⁸(⁷ F ₆) → 4f ⁷(⁸ S)5d of the Tb³⁺ ions. The narrow low-intensity absorption bands attributed to the 4f → 4f transitions from the ⁷ F ₆ ground level to the ⁷ F _0–5 multiplet levels of the Tb³⁺ ions are observed in the wavelength range 1.7–10.0 μm. In the luminescence spectra measured at a temperature of 10 K, the highest intensity is observed for a band with the maximum at a wavelength λ ≈ 0.544 μm, which is associated with the ⁵ D ₄ → ⁷ F ₅ radiative transition in the Tb³⁺ ion.     

Interaction of RE<Superscript>3+</Superscript> impurity ions with inhomogeneous field of radiation

A scheme is proposed for computing the probability of the dipole-forbidden f–f transition at the interaction of the RE³⁺ impurity ion with the field of an inhomogeneous exciting radiation. It is shown that in the case under consideration, the prohibition on electric dipole transitions can be repealed without involving the Judd–Ofelt theory of induced electric dipole transitions. The quantitative estimation of the absorption cross-section of YAG:Er³⁺ crystal at the wavelength of 1530 nm (⁴I_15/2 → ⁴I_13/2) was carried out for the simplest model of the inhomogeneous exciting radiation.     

Initiation of combustion of a hydrogen-air mixture with ozone impurity by UV laser radiation

The ignition kinetics of hydrogen-air mixtures with a small amount (0.5%) of ozone that are exposed to laser radiation with wavelength λ _I = 248.4 nm is analyzed. The formation of excited O(¹ D) atoms and O₂(a ¹Δ _g ) molecules due to O₃ molecule photodissociation is shown to greatly intensify the chain reactions and noticeably decrease the induction period and ignition temperature compared with the case when the radiation is absent even if the radiation energy applied to the gas is low, E _s = 0.5?1.0 eV per O₃ molecule. The efficiency of such a way of combustion initiation is much higher than at local heating of the medium by laser radiation but, at the same time, is considerably lower than the efficiency of the method based on excitation of O₃ molecule asymmetric oscillations.     

Visualization of 2-μm radiation by BiF<Subscript>3</Subscript>:Ho<Superscript>3+</Superscript> and BiF<Subscript>3</Subscript>:Ho<Superscript>3+</Superscript>/Yb<Superscript>3+</Superscript> ceramics

A series of ceramic samples of the compositions BiF₃:1%Ho³⁺, BiF₃:4%Ho³⁺, BiF₃:1%Ho³⁺ + 1%Yb³⁺, and BiF₃:1%Ho³⁺ + 3%Yb³⁺ is synthesized and the conversion of Tm:YLF laser radiation (λ = 1908 nm) is studied. The luminescence spectra exhibit bands in the regions of 490, 545, and 650 nm. The kinetic measurements of the afterglow of the green and red bands show that the population of the ⁵S₂ and ⁵F₄ states in the BiF₃:1%Ho³⁺ samples occurs due to successive absorption of excitation photons, while the ⁵F₅ level of Ho³⁺ is populated due to the ion–ion interaction. Codoping with Yb³⁺ leads to a decrease in the visualization threshold power density to 2 W/cm².