Radiation response of pseudo-MOS transistors fabricated in hardened fully-depleted SIMOX SOI wafers

The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD (fully-depleted) SIMOX (Separation by Implanted Oxygen) SOI (Silicon-on-insulator) wafers is presented.At 1 Mrad(Si) radiation dose, the threshold voltage shift of the pseudo-MOS transistor is reduced from -115.5 to -1.9 V by the hardening procedure.The centroid location of the net positive charge trapped in BOX, the hole-trap density and the hole capture fraction of BOX are also shown.The results suggest that hardened FD SIMOX SOI wafers can perform well in a radiation environment.     

Total dose radiation effects on SOI NMOS transistors with different layouts

Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS) transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX) substrate and tested using 10keV X-ray radiation sources. The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×10⁶ rad(Si). The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.     

Total dose radiation effects on SOI NMOS transistors with different layouts

Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS)transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX)substrate and tested using 10 keV X-ray radiation sources.The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0×106 rad(Si).The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures.     

部分耗尽SOI MOSFET总剂量效应与偏置状态的关系

实验表明SOI MOSFET掩埋氧化层中的总剂量辐射效应与辐射过程中的偏置状态有关. 对诱发背沟道泄漏电流的陷阱电荷进行了研究. 建立一个数值模型来模拟不同偏置下陷进电荷的建立, 它包括辐射产生的载流子复合和俘获的过程. 模拟结果与实验结果相符, 解释了总剂量辐射效应受偏置状态影响的机理.     

栅长对PDSOINMOS器件总剂量辐照效应影响的实验研究

本文对PDS01NMOS器件进行了60Coγ射线总剂量辐照的实验测试,分析了不同的栅长对器件辐射效应的影响及其物理机理．研究结果表明,短沟道器件辐照后感生的界面态密度更大,使器件跨导出现退化．PDSOI器件的局部浮体效应是造成不同栅长器件辐照后输出特性变化不一致的主要原因．短沟道器件输出特性的击穿电压更低．在关态偏置条件下,由于背栅晶体管更严重的辐射效应,短沟道SOI器件的电离辐射效应比同样偏置条件下长沟道器件严重．     

采用硅离子注入改进SIMOX埋氧的抗总剂量辐射性能研究

采用硅离子注入工艺对注氧隔离(SIMOX)的绝缘体上硅(SOI)材料进行改性, 在改性材料和标准SIMOX材料上制作了部分耗尽环型栅NMOS/SOI晶体管, 并对其进行⁶⁰Co γ射线总剂量辐照试验. 通过背栅的I-V特性表征晶体管的总剂量辐照特性. 结果表明, 在埋氧层注硅可以降低NMOS/SOI受辐照引起的背栅阈值电压漂移, 提高埋氧层的抗总剂量能力.     

Investigation solution to improve the irradiation reliability of SOI NMOSFET

A solution is developed to improve the irradiation reliability of SOI NMOSFET(N-type Metal Oxide Semiconductor Field Effect Transistor).This solution,including SOI(Silicon On Insulator)wafer hardening and transistor structure hardening,protects the SOI circuit from total dose irradiation effect.     

深亚微米金属氧化物场效应晶体管及寄生双极晶体管的总剂量效应研究

为从工艺角度深入研究航空航天用互补金属氧化物半导体(CMOS)工艺混合信号集成电路总剂量辐射损伤机理, 选取国产CMOS 工艺制作的NMOS晶体管及寄生双极晶体管进行了⁶⁰Coγ射线源下的总剂量试验研究. 发现: 1) CMOS工艺中固有的寄生效应导致NMOS晶体管截止区漏电流对总剂量敏感, 随总剂量累积而增 大; 2) 寄生双极晶体管总剂量损伤与常规双极晶体管不同, 表现为对总剂量不敏感, 分析认为两者辐射损伤的差异来源于制作工艺的不同; 3)寄生双极晶体管与NMOS晶体 管的总剂量损伤没有耦合效应; 4)基于上述研究成果, 初步分析CMOS工艺混合信号集成电路中数字模块及模拟模块辐射损伤机制, 认为MOS晶体管截止漏电流增大是导致数字模块功耗增大的主因, 而Bandgap电压基准源模块对总剂量不敏感源于寄生双极晶体管抗总剂量辐射的能力. 关键词： 总剂量效应 N沟道金属氧化物场效应晶体管 寄生双极晶体管 Bandgap基准电压源     

Investigation on a solution to improve the irradiation reliability of SOI NMOSFET

A solution is developed to improve the irradiation reliability of SOI NMOSFET (N-type Metal Oxide Semiconductor Field Effect Transistor). This solution, including SOI (Silicon On Insulator) wafer hardening and transistor structure hardening, protects the SOI circuit from total dose irradiation effect.     

Total dose radiation response of modified commercial silicon-on-insulator materials with nitrogen implanted buried oxide

Nitrogen ions of various doses are implanted into the buried oxide(BOX) of commercial silicon-on-insulator(SOI) materials,and subsequent annealings are carried out at various temperatures.The total dose radiation responses of the nitrogen-implanted SOI wafers are characterized by the high frequency capacitance-voltage(C-V) technique after irradiation using a Co-60 source.It is found that there exist relatively complex relationships between the radiation hardness of the nitrogen implanted BOX and the nitrogen implantation dose at different irradiation doses.The experimental results also suggest that a lower dose nitrogen implantation and a higher post-implantation annealing temperature are suitable for improving the radiation hardness of SOI wafer.Based on the measured C-V data,secondary ion mass spectrometry(SIMS),and Fourier transform infrared(FTIR) spectroscopy,the total dose responses of the nitrogen-implanted SOI wafers are discussed.     

氮氟复合注入对注氧隔离SOI材料埋氧层内固定正电荷密度的影响

为了抑制埋层注氮导致的埋层内正电荷密度的上升, 本文采用氮氟复合注入方式, 向先行注氮的埋层进行了注氮之后的氟离子注入, 并经适当的退火, 对埋层进行改性. 利用高频电容-电压 (C-V) 表征技术, 对复合注入后的埋层进行了正电荷密度的表征. 结果表明, 在大多数情况下, 氮氟复合注入能够有效地降低注氮埋层内的正电荷密度, 且其降低的程度与注氮后的退火时间密切相关. 分析认为, 注氟导致注氮埋层内的正电荷密度降低的原因是在埋层中引入了与氟相关的电子陷阱. 另外, 实验还观察到, 在个别情况下, 氮氟复合注入引起了埋层内正电荷密度的进一步上升. 结合测量结果, 讨论分析了该现象产生的原因. 关键词： 绝缘体上硅(SOI) 材料 注氮 注氟 埋氧层正电荷密度     

Comprehensive study on hot carrier reliability of radiation hardened H-gate PD SOI NMOSFET after gamma radiation

ABSTRACT

The authors perform gamma ray irradiation and hot carrier stress on RH H-Gate PD (partially depleted) SOI NMOSFETs as the experimental group and commercial strip-shaped gate PD SOI NMOSFETs as the control group. They analyse HCI degradation in samples and conclude that radiation could enhance HCI degradation in RH H-gate samples. Moreover, the mechanism is explained as the coupling effect between the front gate and back gate caused by TID radiation-induced trap charges in the buried oxide.     

An investigation of electron and oxygen ion damage in Si npn RF power transistors

Abstract

The effects of 8 MeV electrons and 60 and 95 MeV oxygen ions on the electrical properties of Si npn RF power transistors have been investigated as a function of fluence. The dc current gain (h _FE), displacement damage factor, excess base current (Δ I _B=I _Bpost?I _Bpre), excess collector current (Δ I _C=I _Cpost?I _Cpre), collector saturation current (I _CS) and deep level transient spectroscopy trap signatures of the irradiated transistors were systematically evaluated.     

Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS technology

This paper studies the total ionizing dose radiation effects on MOS (metal-oxide-semiconductor) transistors with normal and enclosed gate layout in a standard commercial CMOS (compensate MOS) bulk process. The leakage current, threshold voltage shift, and transconductance of the devices were monitored before and after $\gamma $-ray irradiation. The parameters of the devices with different layout under different bias condition during irradiation at different total dose are investigated. The results show that the enclosed layout not only effectively eliminates the leakage but also improves the performance of threshold voltage and transconductance for NMOS (n-type channel MOS) transistors. The experimental results also indicate that analogue bias during irradiation is the worst case for enclosed gate NMOS. There is no evident different behaviour observed between normal PMOS (p-type channel MOS) transistors and enclosed gate PMOS transistors.     

总剂量辐照下沟道长度对部分耗尽绝缘体上硅p型场效应晶体管电特性的影响

本文通过实验研究了0.8μm PD(Partially Depleted)SOI(Silicon-On-Insulator)p型Metal-oxidesemiconductor-feld-efect-Transistor(MOSFET)经过剂量率为50 rad(Si)/s的60Coγ射线辐照后的总剂量效应,分析了沟道长度对器件辐照效应的影响.研究结果表明:辐照总剂量相同时,短沟道器件的阈值电压负向漂移量比长沟道器件大,最大跨导退化的更加明显.通过亚阈值分离技术分析得到,氧化物陷阱电荷是引起阈值电压漂移的主要因素.与长沟道器件相比,短沟道器件辐照感生的界面陷阱电荷更多.     

用于空间激光通信的InGaAsP 激光二极管辐射损伤研究(英文)

对1:55 μm波长DFB 结构的InGaAsP 多量子阱激光二极管开展电子和60Co- 射线辐照试验。试验结果表明,激光二极管的斜度效率主要受带电粒子沉积的电离总剂量影响,而阈值电流和光功率主要受位移损伤剂量的影响。利用位移损伤剂量方法评价激光二极管的辐射损伤特征,并且预测其在空间辐射环境中的光功率衰退情况。模拟计算结果表明,MEO轨道辐射环境对激光二极管光功率辐射损伤远大于GEO轨道的影响,这主要是由于MEO轨道辐射环境的高能电子通量密度远大于GEO轨道的通量密度。The 1.55 μm InGaAsP multi-quantum-well laser diodes with distributed feedback structures were irradiated by electrons and 60Co- rays. The experimental results show the slope efficiency of laser diode is mostly affected by the total ionizing dose produced by charging particles, and the threshold current and the optical power mainly by displacement damage dose. The displacement damage dose methodology was employed to evaluate radiation damage of the laser diodes, and to predict the power degradations of these diodes in space. The calculated results indicate that the optical powers of the diodes will have more serious degradation for medium Earth orbit than for geosynchronous Earth orbit,due to higher fluence density of high energy electrons in GEO orbits.     

绝缘体中金属离子注入合成纳米颗粒的理论研究

理论上提出了利用离散电子态来计算绝缘体中金属纳米颗粒Fermi能级的方法,给出了金属纳米颗粒的能级结构,并得到了依据金属纳米颗粒等离子体共振峰计算金属纳米颗粒尺寸的新公式.该理论可解释相关现象,通过实验初步验证了该理论的正确性. 关键词： 离子注入 金属纳米颗粒 绝缘体 Fermi能级     

高分子有机场效应晶体管中退火引起的自组织微观结构变化的研究

为了进一步洞悉高分子薄膜自组织机理和高分子有机场效应晶体管(OFET)载流子迁移率之间的直接关联性,本工作采用先进的同步辐射掠入射X射线衍射(GIXRD)技术,研究了高分子OFET中高分子半导体高度区域规则的聚(3-己基噻吩)(RR-P3HT)工作层薄膜,由不同退火温度所导致的薄膜自组织微观结构的变化.GIXRD测试实验结果显示了,对于不同高分子薄膜制备方法(旋涂法及滴膜法)及不同溶液浓度(RR-P3HT溶液浓度为2.5 mg/ml及3.5 mg/ml)制备的RR-P3HT有机半导体工作层,在氮气气氛下, 关键词： 高分子有机场效应晶体管 同步辐射掠入射X射线衍射 自组织 退火     

浮栅ROM集成电路空间低剂量率辐射失效时间预估

利用60Coγ射线开展了浮栅ROM集成电路（AT29C256）总剂量辐照实验， 研究了集成 电路功耗电流和出错数在不同剂量率下的辐射响应；按照定义的失效标准和外推实验技术， 探索了集成电路参数失效与功能失效时间随辐射剂量率的变化关系；根据失效时间与辐射剂 量率的函数关系，预估了浮栅ROM集成电路AT29C256(9911)和AT29C256(9939)空间低剂量率辐射失效时间. 关键词： 低剂量率 辐射损伤 失效时间 总剂量