电荷失配对SiC半超结垂直双扩散金属氧化物半导体场效应管击穿电压的影响

Si C半超结垂直双扩散金属氧化物半导体场效应管(VDMOSFET)相对于常规VDMOSFET在相同导通电阻下具有更大击穿电压.在N型外延层上进行离子注入形成半超结结构中的P柱是制造Si C半超结VDMOSFET的关键工艺.本文通过二维数值仿真研究了离子注入导致的电荷失配对4H-Si C超结和半超结VDMOSFET击穿电压的影响,在电荷失配程度为30%时出现半超结VDMOSFET的最大击穿电压.在本文的器件参数下,P柱浓度偏差导致击穿电压降低15%时,半超结VDMOSFET柱区浓度偏差范围相对于超结VDMOSFET可提高69.5%,这意味着半超结VDMOSFET对柱区离子注入的控制要求更低,工艺制造难度更低.     

New SOI power device with multi-region high-concentration fixed interface charge and the model of breakdown voltage

A new SOI power device with multi-region high-concentration fixed charge(MHFC) is reported. The MHFC is formed through implanting Cs or I ion into the buried oxide layer(BOX), by which the high-concentration dynamic electrons and holes are induced at the top and bottom interfaces of BOX. The inversion holes can enhance the vertical electric field and raise the breakdown voltage since the drain bias is mainly generated from the BOX. A model of breakdown voltage is developed, from which the optimal spacing has also been obtained. The numerical results indicate that the breakdown voltage of device proposed is increased by 287% in comparison to that of conventional LDMOS.     

交联聚乙烯电缆绝缘材料中电树枝的导电特性研究

利用光学显微观察、局部放电测量和共聚焦Raman光谱分析相结合的方法, 研究了交联聚乙烯(XLPE)电缆绝缘材料中两种典型电树枝的导电特性.尽管具有相似的培养条件, 两种电树枝却呈现出完全不同的形态,其中9 kV下典型电树枝为枝-松枝状, 11 kV下为枝状, 而且电树枝生长及局部放电规律呈现出明显的差异.枝-松枝状电树枝主干通道内存在无序石墨碳的沉积, 根据石墨碳G带与D带的相对强度,估算碳层厚度约为8 nm,树枝通道单位长度电阻小于 10 Ω· μm^-1,足以抑制电树枝内局部放电的发展,电树枝呈现出导电型电树枝特征. 枝状电树枝通道内观察到荧光背景,存在材料劣化的产物,但不存在无序石墨碳的聚集, 通道具有明显的非导电特性而不足以抑制电树枝内局部放电的连续作用. 最后提出了XLPE电缆绝缘材料中导电型和非导电型电树枝的单通道生长模型, 利用等效电路理论对XLPE电缆绝缘材料中两种不同导电特性电树枝的生长机理进行了探讨.     

电荷耦合效应对高耐压沟槽栅极超势垒整流器击穿电压的影响

通过沟槽结构和可调节的电子势垒,沟槽栅极超势垒整流器可以更为有效地实现通态压降和反向漏电流之间的良好折衷.在高压应用时,电荷耦合效应对于提高该器件的反向承压能力起到了关键作用.本文通过理论模型与器件模拟结果,分析了沟槽深度、栅氧厚度和台面宽度等关键参数对电荷耦合作用下二维电场分布的影响,归纳出了提高该器件击穿电压的思路与方法,为器件设计提供了有意义的指导.在此基础上,提出了阶梯栅氧结构,该结构在维持几乎相同击穿电压的同时,使正向导通压降降低51.49%.     

Analysis of electrical tree propagation in XLPE power cable insulation

Electrical treeing is one of the major breakdown mechanisms for solid dielectrics subjected to high electrical stress. In this paper, the characteristics of electrical tree growth in XLPE samples have been investigated. XLPE samples are obtained from a commercial XLPE power cable, in which electrical trees have been grown from pin to plane in the frequency range of 4000-10,000 Hz, voltage range of 4-10 kV, and the distances between electrodes of 1 and 2 mm. Images of trees and their growing processes were taken by a CCD camera. The fractal dimensions of electric trees were obtained by using a simple box-counting technique. The results show that the tree growth rate and fractal dimension was bigger when the frequency or voltage was higher, or the distance between electrodes was smaller. Contrary to our expectation, it has been found that when the distance between electrodes changed from 1 to 2 mm, the required voltage of the similar electrical trees decreased only 1or 2 kV. In order to evaluate the difficulties of electrical tree propagation in different conditions, a simple energy threshold analysis method has been proposed. The threshold energy, which presents the minimum energy that a charge carrier in the well at the top of the tree should have to make the tree grow, has been computed considering the length of electrical tree, the fractal dimension, and the growth time. The computed results indicate that when one of the three parameters of voltage, frequency, and local electric field increase, the trends of energy threshold can be split into 3 regions.     

Influence of voltage pulse shape on the delay time for vacuum breakdown

In this paper expressions are derived for the delay time of vacuum breakdown with voltage pulses of ramp and trapezoidal shape. It is shown that the voltage pulse shape has a considerable influence on the delay time. The results obtained may be useful in experimental investigations of vacuum breakdown.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 105–110, September, 1976.     

发展在XLPE电缆绝缘内外侧的电树枝

以XLPE高压电力电缆内外侧绝缘中的电树枝特性为研究对象，通过分析电树枝引发与生长的统计实验规律和采用扫描电子显微镜分析发现，由于不同结晶状态的影响，电缆绝缘内外侧的电树枝特性存在很大的差异.引发于绝缘内侧电树枝引发时间短、生长速度快、电树枝形状具有多样性；起始于绝缘外侧的电树枝不仅引发时间长、生长速度极慢，而且电树枝形状(结构)比较单一.并对这两个位置电树枝的引发和生长机理进行了探讨. 关键词： 电树枝 结晶状态 统计规律 内侧和外侧绝缘层     

氟化时间对环氧树脂绝缘表面电荷积累的影响

为抑制环氧树脂绝缘的表面电荷积累、研究处理时间对表面电荷积累的影响, 使用氟/氮混合气在实验室反应釜中对环氧试样进行了不同时间(10 min, 30 min和60 min)的表面氟化处理. 衰减全反射红外分析与SEM断面和表面观察表明随氟化时间的增加, 氟化层的氟化度和厚度增大, 表面微观粗糙度降低、表面组织变得致密. 与开路热刺激放电电流测量所表明的、未氟化(原)试样有深的表面电荷陷阱和稳定的表面电荷相比, 这些氟化试样的表面不能存储电荷. 沉积在它们表面上的电晕电荷于室温下分别约在2 min, 10 min和15 min内快速衰减为零, 展现随氟化时间的延长而减慢的电荷释放速率. 表面电导率和接触角测量及表面能计算表明氟化引起表面电导率和表面润湿性与极性的显著增加, 但它们随氟化时间的延长而减小. 氟化试样表面电导率的显著增大归因于表面电荷陷阱的非常可能的实质变浅和表面吸附的水分. 表面充电电流测量进一步地表明, 与原试样几乎为零的稳态表面电流相比, 这些氟化试样在连续充电期间显现大的稳态表面电流. 这意味着这些氟化试样在充电期间比原试样有少得多的表面电荷积累.     

Blumlein主放电开关中绝缘结构对沿面闪络电压的影响北大核心CSCD

Blumlein主放电开关作为关键部件被大量地应用于强流电子直线感应加速器等大型脉冲功率装置中,其中绝缘子在主开关中起隔离水或油与气体的作用。设备在高电压脉冲下长时间或高频次作用时,绝缘子气体侧会出现沿面闪络现象,严重影响直线感应加速器的可靠运行。对Blumlein主放电开关中的绝缘结构进行了电场仿真计算,通过对绝缘子的几何结构和电极形状的优化设计,有效调控了绝缘子表面和电极表面的电场分布,试制了不同构型的绝缘子,开展了在标准雷电波脉冲条件下的沿面闪络研究。研究结果表明,优化后的绝缘子的最低和最高沿面闪络电压相比原始结构分别提升了约35.9%和37.2%。     

孔洞聚丙烯驻极体膜中空间电荷与孔洞击穿电荷的俘获特性

对孔洞聚丙烯(PP)驻极体膜系统的研究结果表明：孔洞PP膜中空间电荷的俘获特性随注入的空间电荷量或试样表面电位而变化,注入的电荷量较少时空间电荷主要被俘获在表面深陷阱和近表面次深陷阱中,较多的注入电荷量时空间电荷在进一步填充表层(表面和近表面)陷阱的同时,还将填充体内浅陷阱;这三类陷阱中心所对应的电荷脱阱温度分别约为160℃,138℃和92℃.而孔洞击穿电荷不仅被俘获在与试样表层空间电荷陷阱相似的孔洞表层陷阱中,还有相当的量穿过孔洞表层进入体内、成为浅阱俘获孔洞击穿电荷. 关键词： 孔洞聚丙烯膜 空间电荷 孔洞击穿电荷 俘获特性     

Improving breakdown voltage performance of SOI power device with folded drift region

A novel silicon-on-insulator(SOI) high breakdown voltage(BV) power device with interlaced dielectric trenches(IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer,which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges(holes) at the corner of IDT.The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V.     

空间电荷效应对阴极微凸起热不稳定性的影响

 由于金属微凸起爆炸电子发射的预发射电流密度一般都超过108 A/cm2,因此必须考虑其空间电荷效应的影响。基于金属微凸起爆炸电子发射起始过程模型,通过理论分析和数值模拟,给出了考虑预发射电流空间电荷效应的微凸起爆炸发射延迟时间随二极管平均电场的变化关系。与不考虑预发射电流空间电荷效应的结果进行对比表明,预发射电流的空间电荷效应可以显著增加金属微凸起的爆炸发射延迟时间。     

脉冲电压下的自击穿水介质开关击穿特性和电路参数实验研究

 介绍了“强光一号”加速器中两种结构的自击穿水开关,建立了简化的开关电路模型,并通过估算和Pspice模拟确定了开关的电路参数,包括电极间杂散电容、火花通道电感和火花电阻。研究表明开关导通过程中的流注电容效应可以忽略,放电通道火花电感与电阻选取流注导通时刻的值,且在主放电电流传递过程中保持不变。根据实验结果,阐述了两种开关击穿的不同特点：对于局部电场增强型的球-板电极结构的主开关,可以采用J. C. Martin稍不均匀场水击穿经验公式估算临界场强;而棒-板电极结构的多针开关,适合用J. C. Martin针-板击穿模型的水击穿经验公式估算临界场强,且并联工作的9个多针开关可以同时形成独立的放电通道。     

脉冲电压下的自击穿水介质开关击穿特性和电路参数实验研究

介绍了“强光一号”加速器中两种结构的自击穿水开关,建立了简化的开关电路模型,并通过估算和Pspice模拟确定了开关的电路参数,包括电极间杂散电容、火花通道电感和火花电阻。研究表明开关导通过程中的流注电容效应可以忽略,放电通道火花电感与电阻选取流注导通时刻的值,且在主放电电流传递过程中保持不变。根据实验结果,阐述了两种开关击穿的不同特点：对于局部电场增强型的球-板电极结构的主开关,可以采用J. C. Martin稍不均匀场水击穿经验公式估算临界场强;而棒-板电极结构的多针开关,适合用J. C. Martin针-板击穿模型的水击穿经验公式估算临界场强,且并联工作的9个多针开关可以同时形成独立的放电通道。     

表层氟化温度对聚乙烯中空间电荷积累的影响

在实验室反应釜中于不同的温度(35 ℃, 55 ℃和70 ℃) 下, 以氟气体积浓度为12.5%的氟/氮混合气对热压制备的聚乙烯(PE) 片状试样(厚约0.8 mm) 进行了相同时间(2 h) 的表层氟化改性. 利用压力波法研究了氟化温度对PE中空间电荷积累的影响. 结果显示, 随着氟化温度的提高直流高压作用下的氟化试样中的空间电荷积累明显减少, 这个70 ℃的氟化试样中几乎没有空间电荷. 衰减全反射红外分析表明, 氟化引起了试样表层化学组成的本质变化及氟化度随氟化温度的明显提高. 接触角测量与表面能计算间接地表明了这些氟化层有显著增大的介电常数. 开路热刺激放电电流测量进一步揭示了这些氟化层 不同的电荷捕获特性, 及随着氟化温度的提高氟化层对化学杂质从半导性电极向PE扩散的增强的阻挡特性, 因此表明氟化层中自由体积的相应减小. 表层自由体积的减小对抑制空间电荷的积累, 比介电常数的增大和电荷陷阱的变化起到更加显著的作用.     

Influence of sub-bandgap illumination on space charge distribution in CdZnTe detector

The space charge accumulation in CdZnTe crystals seriously affects the performance of high-flux pulse detectors.The influence of sub-bandgap illumination on the space charge distribution and device performance in CdZnTe crystals were studied theoretically by Silvaco TCAD software simulation.The sub-bandgap illumination with a wavelength of 890 nm and intensity of 8×10?8 W/cm2 were used in the simulation to explore the space charge distribution and internal electric field distribution in CdZnTe crystals.The simulation results show that the deep level occupation faction is manipulated by the sub-bandgap illumination,thus space charge concentration can be reduced under the bias voltage of 500 V.A flat electric field distribution is obtained,which significantly improves the charge collection efficiency of the CdZnTe detector.Meanwhile,premised on the high resistivity of CdZnTe crystal,the space charge concentration in the crystal can be further reduced with the wavelength of 850 nm and intensity of 1×10?7 W/cm2 illumination.The electric field distribution is flatter and the carrier collection efficiency of the device can be improved more effectively.     

加压去离子水短脉冲击穿特性的初步研究

 液体的介质气泡击穿理论作为研究基础,开展了两种短脉冲下高压强水介质开关的击穿实验,获得了水介质击穿场强及耐压时间与水中压强关系的数据,通过分析比较得出：在脉宽300 ns和1 μs两种脉冲电压作用下,当水中压强逐渐提高时水介质击穿电压和耐压时间均呈上升趋势,压强越高趋势越明显,而且作用脉冲越宽水中压强对于水介质击穿特性的影响越显著。     

加压去离子水短脉冲击穿特性的初步研究

液体的介质气泡击穿理论作为研究基础,开展了两种短脉冲下高压强水介质开关的击穿实验,获得了水介质击穿场强及耐压时间与水中压强关系的数据,通过分析比较得出：在脉宽300 ns和1 μs两种脉冲电压作用下,当水中压强逐渐提高时水介质击穿电压和耐压时间均呈上升趋势,压强越高趋势越明显,而且作用脉冲越宽水中压强对于水介质击穿特性的影响越显著。     

35kV低温绝缘超导电缆绝缘设计研究

主要研究了35k V低温绝缘超导电缆的绝缘特性。首先对低温绝缘材料聚丙烯层压纸PPLP(Polypropylene laminated paper)的绝缘性能进行了绝缘击穿试验研究,得到PPLP工频耐压及雷电冲击耐压的绝缘强度。在此基础上,设计了35k V低温绝缘超导电缆的绝缘,并且制作了模型样品,并对样品绝缘性能进行了局部放电试验及工频耐压试验,验证了设计的绝缘满足国家规定的电缆要求。对超导电缆的实际应用有着重要意义。     

One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

A novel one-dimensional(1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field(RESURF) lateral power device fabricated on silicon on an insulator(SOI) substrate.We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions.Based on the assumption,the lateral PN junction behaves as a linearly graded junction,thus resulting in a reduced surface electric field and high breakdown voltage.Using the proposed model,the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools.The analytical results are shown to be in fair agreement with the numerical results.Finally,a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters.This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device.