Effect of surface modification on dielectric and magnetic properties of metal powder/polymer nanocomposites

Metal nanopowder (Co and Fe)/polymer composites, both with and without surface modification by behenic acid, were fabricated and their dielectric and magnetic properties were measured at 1 GHz to study the effect of surface modification on the electromagnetic properties. The relative permittivity and the real part of the permeability of the composites with surface modified powders were higher than those with unmodified powders. Related dielectric losses remained at almost the same level, but magnetic losses were somewhat increased. The increase of relative permittivity could result from the increased volume fraction of interphase with a slightly higher relative permittivity at the particle/polymer interface than that of the bulk polymer. The increase in the real part of the permeability may be caused by suppression of the induced demagnetizing field due to suppression of eddy currents by a better particle distribution and a decrease in effective agglomerate size because of the surface modification.     

Effect of dopant and DC bias potential on dielectric properties of polyvinyl alcohol (PVA)/PbTiO3 - composite films

Composite films of Polyvinyl alcohol (PVA) mixed with Lead Titante Oxide (PbTiO₃) were prepared. Dopant incorporated and DC bias induced electrical parameters were disclosed with respect to pure PVA film. The results demonstrate dielectric polarization is not only directly proportional to PbTiO₃% of dopant but also external DC bias potential at 30 °C based on Maxwell Wagner theory. Hence these properties highly applicable as super-capacitor film and humidity sensor applications.     

A first principle calculation of electronic and dielectric properties of electrically gated low-buckled mono and bilayer silicene

The structural, electronic and dielectric properties of mono and bilayer buckled silicene sheets are investigated using density functional theory. A comparison of stabilities, electronic structure and effect of external electric field are investigated for AA and AB-stacked bilayer silicene. It has been found that there are no excitations of electrons i.e. plasmons at low energies for out-of-plane polarization. While for AB-stacked bilayer silicene 1.48 eV plasmons for in-plane polarization is found, a lower value compared to 2.16 eV plasmons for monolayer silicene. Inter-band transitions and plasmons in both bilayer and monolayer silicene are found relatively at lower energies than graphene. The calculations suggest that the band gap can be opened up and varied over a wide range by applying external electric field for bilayer silicene. In infra-red region imaginary part of dielectric function for AB-stacked buckled bilayer silicene shows a broad structure peak in the range of 75–270 meV compared to a short structure peak at 70 meV for monolayer silicene and no structure peaks for AA-stacked bilayer silicene. On application of external electric field the peaks are found to be blue-shifted in infra-red region. With the help of imaginary part of dielectric function and electron energy loss function effort has been made to understand possible interband transitions in both buckled bilayer silicene and monolayer silicene.     

Study of dielectric and ac impedance properties of Ti doped Mn ferrites

We have reported dielectric and ac impedance properties of Ti doped Mn_1+xFe_2−2xO₄ (0x0.5) ferrites prepared by solid-state reaction method, using dielectric and impedance spectroscopy in the frequency range of 42 Hz–5 MHz, between the temperatures (300K–473K). The dielectric constant and dielectric loss (tan δ) decreases with increasing frequency but these parameters increase with increasing temperature. The dielectric loss tangent curves exhibit dielectric relaxation peaks at high frequencies (3.6 kHz–5 MHz), which are attributed to the coincidence of the frequency of charge hopping between the localized charge states and the external field. The dielectric properties have been explained on the basis of space charge polarization according to Maxwell–Wagner’s two-layer model and the hopping of charge between Fe²⁺ and Fe³⁺ as well as between Mn³⁺ and Mn²⁺ ions at B-sites. The complex impedance analysis has been used to separate grain and grain boundary in studied samples. Two semicircles corresponding to grain and grain boundary have been observed at low temperature, while only one semicircle has been seen at high temperatures. The resistance of grain and grain boundary both increase with Ti⁴⁺ doping.     

Study of dielectric and impedance properties of Mn ferrites

The paper reports on the effect of Al substitution on the structural and electrical properties of bulk ferrite series of basic composition MnFe_2−2xAl_2xO₄ (0.0≤x≤0.5) synthesized using solid state reaction method. XRD analysis confirms that all the samples exhibit single phase cubic spinel structure excluding presence of any secondary phase. The dielectric constant shows a normal behaviour with frequency, whereas the loss tangent exhibits an anomalous behaviour with frequency for all compositions. Variation of dielectric properties and ac conductivity with frequency reveals that the dispersion is due to Maxwell-Wagner type of interfacial polarization in general and hopping of charge between Fe⁺² and Fe⁺³ as well as between Mn⁺² and Mn⁺³ ions at octahedral sites. The complex impedance plane spectra shows the presence of two semicircles up to x=0.2, and only one semicircle for the higher values of x. The analysis of the data shows that the resistive and capacitive properties of the Mn ferrite are mainly due to processes associated with grain and grain boundaries.     

Studies of the structural,electronic and dielectric properties of Ca1−xSrxTiO3

The lattice constants, band structure and dielectric properties of Ca_1−xSr_xTiO₃ (0<x<1) (CSTO) have been studies by using the first-principles implemented with the GGA-PBEsol method. The calculation results shows that the lattice constants of CSTO obeys the Vegard model while the energy gap of CSTO shows a decreasing trend with the changing molar fraction x. The real and imaginary parts of the dielectric function and the static dielectric constant of the CSTO, optical permittivity and the static refractive index, are given to support the potential applications of the compounds in the future.     

Influence of Mg doping on the dielectric properties of MgO-doped lithium niobate

The dielectric function of MgO-doped lithium niobate (LN:Mg) has been calculated, which depends on the angular frequency and Mg concentration. On the basis of our experimental data and the defect structure models, the substitution of Li ions by Mg ions will strongly influence the dielectric properties of LN:Mg.     

Effect of polymer relaxation on dielectric spectroscopic study of polymer–ferroelectric liquid crystal composites

Polymethylmethacrylate (PMMA) and ferroelectric liquid crystal (P–FLC) composite films (~ 4 μm) with varying proportions of ferroelectric liquid crystal have been prepared and the dielectric response of the composite films as a function of wide frequency (100 Hz–10 MHz) and temperature (127–40 °C) have been analyzed. The dielectric spectra of such composite systems are considerably modified compared to those of the corresponding pure LC or PMMA materials. The observed paraelectric to ferroelectric transition temperature of the composites is found to be lower (~ 85 °C) compared to that of the pure LC system (~ 98 °C), which makes these composites technologically more significant. The P–FLC composites also exhibit higher relaxation frequency and smaller dielectric strength for the Goldstone mode compared to those of the corresponding pure FLC. Depending on the percentage of the constitute materials, the molecular dynamics of the composite materials changes. Dielectric contributions of both liquid crystal and PMMA matrix forming the composites have been analyzed on the basis of Havriliak and Negami function.     

Automatic measurement for dielectric properties of solid material at 890 GHz

An automatic measurement system has been used to measure the complex dielectric constant of solid materials at 890GHz. This instrument can be used as a two-beam interferometer for determining the refractive index or as a transmitter for measuring the absorption coefficient of dielectric materials at FIR and SMMW frequency. The results for seven low-loss solid materials and the accuracy of the measurement are presented.Project supported by the Fund of the National Sciences of P.R.China.     

Synthesis, microstructure, dielectric and magnetic properties of Cu substituted Ni-Li ferrites

Cu substituted Ni-Li spinel ferrites were prepared by a conventional sol-gel auto-combustion method. The structure, surface morphology, dielectric and magnetic properties were investigated by X-ray diffraction, infrared spectroscopy, scanning electron microscopy, impedance spectroscopy and vibrating sample magnetometer, respectively. X-ray diffraction studies reveal the single phase spinel structure of the ferrites and the crystallite size varies from 23 to 35 nm. Incorporation of Cu in the Ni-Li ferrites increases the grain size. The dielectric parameters such as ε´, ε′′, loss tan δ and ac conductivity (σ_ac) have been measured for the annealed samples in the temperature range from 35 to 200 °C and over the frequency range from 10¹ to 10⁷ Hz. The saturation magnetization and coercivity show a dependence on the composition and microstructure. The values of saturation magnetization vary from 25.6 to 33.6 emu/g with increase in x for samples annealed at 600 °C. The values of the coercivity increase from 170 to 203 Oe with increase in x.     

Mechanical and dielectric properties of SEBS modified by graphite inclusion and composite interface

Tough and flexible dielectrics were prepared using graphite (G), a natural and low-cost resource, as filler in polystyrene-b-(ethylene-co-butylene)-b-polystyrene (SEBS) and maleinized SEBS (SEBS-MA) matrices. The disintegration of graphite in submicron particles was accomplished by the shear forces during the melt processing step and it was highlighted by atomic force microscopy. Simultaneous increase of tensile strain, strength and Young's modulus was noticed for SEBS/G and SEBS-MA/G composites compared to unfilled matrices, this remarkable feature being previously reported only for some nanocomposites. Moreover, an exponential variation of the dielectric permittivity with the volume fraction of G was obtained. Higher reinforcing efficiency and better dielectric properties were observed in SEBS-MA/G composites, compared to the corresponding SEBS/G composites, due to the stronger polymer–filler interface and better dispersion of graphite. This study brings new insights into nanolevel properties of SEBS composites and it opens new perspectives on high performance composites by using graphite instead of expensive graphene and efficient melt mixing process.     

冷绝缘超导电缆绝缘材料测试综述

绝缘材料在液氮中的各种性能将直接影响到冷绝缘高温超导(HTS)超导电缆的质量。对四种绝缘材料:电缆纸、聚丙烯层压纸、聚酰亚胺薄膜和低密度聚乙烯薄膜在常温和低温下的电阻率、介电常数、介质损耗角正切、低温介电强度和局部放电进行实验研究和对比,得到了有价值的数据。     

Studies on optical,mechanical, dielectric properties of bisthiourea nickel bromide NLO single crystal

Bisthiourea nickel bromide (BTNB) single crystal has been grown by solution growth technique at room temperature. The crystal structure and lattice parameters were determined for the grown crystal by single crystal X-ray diffraction studies. Optical constants like band gap, refractive index, reflectance, extinction coefficient and electric susceptibility were determined from UV–vis-NIR spectrum. Nonlinear optical property was discussed to confirm the SHG efficiency of the grown crystal. The mechanical strength of the grown crystal was analyzed using Vickers microhardness tester. The dielectric constant and dielectric loss of bisthiourea nickel bromide are measured in the frequency range of 50 Hz to 5 MHz at different temperatures. The ac conductivity studies were carried out on bisthiourea nickel bromide crystals. In order to investigate the growth mechanism and surface features, etching studies are carried out for the crystal. Photoconductivity studies were carried out on bisthiourea nickel bromide crystals.     

Magnetic,dielectric and optical properties of five-layered Aurivillius phase Bi6Fe2Ti3O18-based ceramics

The structural, magnetic, dielectric and optical properties of Aurivillius Bi₆Fe₂Ti₃O₁₈-based ceramics were investigated in detail. The replacement of Co for Fe/Ti ions obviously varies the grain morphology. Compared with Bi₆Fe₂Ti₃O₁₈ (BFTO) with antiferromagnetic ordering, a spin glass state can be observed in Bi_5.25La_0.75Fe₂Ti₃O₁₈ ceramic, while other samples exhibit the ferromagnetic behavior. The specimen Bi₆Fe₂Ti₂(NbCo)_0.5O₁₈ (BFTNCO) represents the largest remanent magnetization M_r of 0.93emu/g among all the samples, which can be attributed to the combination of a short lattice parameter c and a large lattice distortion as well as more magnetic ions in a unit cell. The room-temperature dc conductivity of BFTNCO is one order magnitude lower than that of BFTO. In addition, the band gaps of Co-doped samples are about 0.2eV smaller than these of Co-free samples. This work provides a promising path forward to tailor the multiferroic and optical properties in five-layered Aurivillius compounds.     

Study of heterogeneous interaction in binary mixtures of 2-methoxyethanol-water using dielectric relaxation spectroscopy

The dielectric relaxation measurements on binary mixtures of 2-methoxyethanol with water have been carried out over entire concentrations and at temperature range of 0 °C to 25 °C using a picosecond time domain reflectometry technique. The complex dielectric permittivity spectra of 2-methoxyethanol/water mixtures were fitted using Havriliak-Negami equation. The static dielectric constant and relaxation time for all concentrations were obtained using least square fit method. The principal relaxation time is small if compared to that of corresponding alcohol/water mixtures this may be due to the hydrogen bonding ether oxygen in the 2-ME-water system. Excess dielectric properties, Kirkwood correlation factor, thermodynamic properties and Bruggeman factor are also determined and the results are interpreted in terms of heterogeneous interactions among the unlike molecules due to hydrogen bonding.     

Frequency and voltage dependence of dielectric properties and electric modulus in Au/PVC + TCNQ/p-Si structure at room temperature

Au/PVC + TCNQ/p-Si structure was fabricated and real and imaginary parts of the dielectric constant (ɛ′, ɛ″), loss tangent (tanδ), and the real and imaginary parts of the electric modulus (M′, M″) and ac conductivity (σ_ac) of this structure have been investigated in wide frequency a range of 1 kHz–5 MHz at room temperature. All of these parameters were found strong function of frequency and voltage especially in the inversion and depletion regions at low frequencies due to interfacial polarization and charges at interface states (N_ss). The decrease in ɛ′ and ɛ″ with increasing frequency indicated that the interfacial dipoles have less time to orient themselves in the direction of the alternate field. While the value of M′ increase with increasing frequency and reach a maximum, M″ shows a peak and the peak position shifts to higher frequency with increasing applied voltage. The ln(σ_ac) vs ln(ω) plot of the structure for 0.5 V has three linear regions (I, II and III) with different slopes which correspond to low, intermediate and high frequency ranges, respectively. Such behavior of ln(σ_ac) vs ln(ω) plot indicated that there are three different conduction mechanisms in the Au/PVC + TCNQ/p-Si structure at room temperature.     

Effect of substrate bias voltage on the structure, electric and dielectric properties of TiO2 thin films by DC magnetron sputtering

Titanium dioxide (TiO₂) films have been deposited on glass and p-silicon (1 0 0) substrates by DC magnetron sputtering technique to investigate their structural, electrical and optical properties. The surface composition of the TiO₂ films has been analyzed by X-ray photoelectron spectroscopy. The TiO₂ films formed on unbiased substrates were amorphous. Application of negative bias voltage to the substrate transformed the amorphous TiO₂ into polycrystalline as confirmed by Raman spectroscopic studies. Thin film capacitors with configuration of Al/TiO₂/p-Si have been fabricated. The leakage current density of unbiased films was 1 × 10⁻⁶ A/cm² at a gate bias voltage of 1.5 V and it was decreased to 1.41 × 10⁻⁷ A/cm² with the increase of substrate bias voltage to −150 V owing to the increase in thickness of interfacial layer of SiO₂. Dielectric properties and AC electrical conductivity of the films were studied at various frequencies for unbiased and biased at −150 V. The capacitance at 1 MHz for unbiased films was 2.42 × 10⁻¹⁰ F and it increased to 5.8 × 10⁻¹⁰ F in the films formed at substrate bias voltage of −150 V. Dielectric constant of TiO₂ films were calculated from capacitance–voltage measurements at 1 MHz frequency. The dielectric constant of unbiased films was 6.2 while those formed at −150 V it increased to 19. The optical band gap of the films decreased from 3.50 to 3.42 eV with the increase of substrate bias voltage from 0 to −150 V.     

Enhanced ferroelectric,piezoelectric and dielectric properties of (1-x)CaBi2Nb2O9-xBaZr0.2Ti0.8O3 high-temperature piezoelectric composite ceramics

Among Aurivillius layer-structured materials, CaBi₂Nb₂O₉ is a best potential candidate for ultrahigh-temperature applications because of its highest Curie temperature of about 940 °C. In this paper, (1-x)CaBi₂Nb₂O₉-xBaZr_0.2Ti_0.8O₃ composite ceramics were prepared by conventional solid-state sintering method. The dielectric results show that the introduction of BaZr_0.2Ti_0.8O₃ not only increases the permittivity of the material, but also reduces its dielectric loss. The optimum electrical properties were obtained in the x = 0.01 sample with piezoelectric coefficient (d₃₃) of 15.1 pC/N and high ferroelectric remnant polarization (P_r) of 9.9 μC/cm². Furthermore, the composite samples show good thermal depoling performance, the d₃₃ of the x = 0.01 sample is 13.8 pC/N, which is about 91% of the initial value after depoling at 800 °C. Therefore, (1-x)CaBi₂Nb₂O₉-xBaZr_0.2Ti_0.8O₃ is one of the candidates for high temperature piezoelectric materials.     

Magnetic, dielectric and thermal stability of Ni-Zn ferrite-epoxy composite thin films for electronic applications

The fabrication of flexible epoxy thin film composites was investigated in this study. Neat epoxy with a resin-to-hardener ratio of 100:32 exhibits higher tensile properties and thermal stability than neat epoxy with a resin-to-hardener ratio of 100:45. In addition, the thermal stability of epoxy composites decreased as the NiZn ferrite content in the epoxy was increased. This result could be caused by the catalytic effect of ferrite. Vibration sample magnetometer results revealed the ferrimagnetic behavior of the ferrite-filled epoxy composites. The degree of saturation magnetization of the epoxy composites increased with the addition of NiZn ferrite nanoparticles. Dielectric tests were performed at room temperature and at frequencies ranging from 10⁴ Hz to 10⁶ Hz. These findings indicate that the dielectric constant and the dielectric loss are dependent on the filler concentration and test frequency.     

Physical, electrical and dielectric properties of Ca-substituted strontium hexaferrite (SrFe12O19) nanoparticles synthesized by co-precipitation method

Calcium substituted strontium hexaferrite Ca_xSr_1−xFe₁₂O₁₉ (x=0.0−0.6) nanoparticles are synthesized by chemical co-precipitation method. The synthesized samples are characterized by Fourier Transform Infrared (FTIR), X-ray diffraction (XRD), Scanning Electron Microscopy, Transmission Electron Microscopy, DC electrical resistivity and dielectric measurements. FTIR data of uncalcined sample shows that nitrate ions are present which disappeared on calcination at 920 °C. The XRD data shows that a single hexagonal magnetoplumbite phase is formed in samples in which the calcium content, x, is ≤0.20. However, a nonmagnetic phase (α-Fe₂O₃) in addition to the hexagonal phase is also present in samples with x>0.20. The average crystallite size is found between 17 and 29 nm. The DC electrical resistivity increases with increase of calcium content up to level of x=0.2 but decreased on further addition of calcium. The enhanced resistivity of the calcium doped material has potential applications in microwave devices. The variations of dielectric constant and dielectric loss angle are explained on the basis of Maxwell-Wagner and Koops models.