Optical spin injection and spin lifetime in Ge heterostructures

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin polarizations and to resolve the spin dynamics of holes and electrons. The circular polarization degree of the direct gap photoluminescence exceeds the theoretical bulk limit, yielding ～37% and ～85% for transitions with heavy and light holes states, respectively. The spin lifetime of holes at the top of the valence band is estimated to be ～0.5 ps and it is governed by transitions between light and heavy hole states. Electrons at the bottom of the conduction band, on the other hand, have a spin lifetime that exceeds 5?ns below 150?K. Theoretical analysis of the spin relaxation indicates that phonon-induced intervalley scattering dictates the spin lifetime of electrons.     

Theoretical aspects of dynamic nuclear polarization in the solid state - the solid effect

Dynamic nuclear polarization has gained high popularity in recent years, due to advances in the experimental aspects of this methodology for increasing the NMR and MRI signals of relevant chemical and biological compounds. The DNP mechanism relies on the microwave (MW) irradiation induced polarization transfer from unpaired electrons to the nuclei in a sample. In this publication we present nuclear polarization enhancements of model systems in the solid state at high magnetic fields. These results were obtained by numerical calculations based on the spin density operator formalism. Here we restrict ourselves to samples with low electron concentrations, where the dipolar electron-electron interactions can be ignored. Thus the DNP enhancement of the polarizations of the nuclei close to the electrons is described by the Solid Effect mechanism. Our numerical results demonstrate the dependence of the polarization enhancement on the MW irradiation power and frequency, the hyperfine and nuclear dipole-dipole spin interactions, and the relaxation parameters of the system. The largest spin system considered in this study contains one electron and eight nuclei. In particular, we discuss the influence of the nuclear concentration and relaxation on the polarization of the core nuclei, which are coupled to an electron, and are responsible for the transfer of polarization to the bulk nuclei in the sample via spin diffusion.     

Negative circular polarization of InP QD luminescence: Mechanism of formation and main regularities

The spectrum and kinetics of the circular polarization of InP quantum dot (QD) photoluminescence have been experimentally investigated under different conditions of optical excitation and at different bias voltages applied to the sample. It is established that, at a bias of about ?0.1 V, the degree of photoluminescence polarization is negative and reaches ?50% in limiting cases. It is concluded that the negative polarization is formed in QDs containing one recident electron per dot and is mainly caused by the optical orientation of the electron spin. It is shown that all experimentally observed regularities are well described in the framework of the model assuming the energy relaxation of photogenerated electron-hole pairs accompanied by the electron- hole spin flip-flop process.     

Effect of electron-electron interaction on spin relaxation of charge carriers in semiconductors

An analysis of spin dynamics is presented for semiconductor systems without inversion symmetry that exhibit spin splitting. It is shown that electron-electron interaction reduces the rate of the Dyakonov-Perel (precession) mechanism of spin relaxation both via spin mixing in the momentum space and via the Hartree-Fock exchange interaction in spin-polarized electron gas. The change in the Hartree-Fock contribution with increasing nonequilibrium spin polarization is analyzed. Theoretical predictions are compared with experimental results on spin dynamics in GaAs/AlGaAs-based quantum-well structures. The effect of electron-electron collisions is examined not only for two-dimensional electron gas in a quantum well, but also for electron gas in a bulk semiconductor and a quantum wire.     

Spin relaxation by transient monopolar and bipolar optical orientation

We have used two-color time-resolved spectroscopy to measure the relaxation of electron spin polarizations in a bulk semiconductor. The circularly polarized pump beam induces a polarization either by direct excitation from the valence band, or by free-carrier (Drude) absorption when tuned to an energy below the band gap. We find that the spin relaxation time, measured with picosecond time resolution by resonant induced Faraday rotation in both cases, increases in the presence of photogenerated holes. In the case of the material chosen, n-InSb, the increase was from 14 to 38 ps.     

Spin orientation of electrons by unpolarized light pulses in low-symmetry quantum wells

The spin dynamics of electrons in low-symmetry quantum wells (QWs) under conditions of interband excitation by ultrashort unpolarized light pulses is investigated. It is shown that after the transmission, spin polarization appears in the system after a time comparable with the electron momentum relaxation time for an electron pulse and then vanishes. The microscopic theory of spin orientation of electrons by optical pulses carrying zero angular momentum is developed for asymmetric QWs grown from semiconductors with the zinc blende lattice along the [110] crystallographic direction. Pumping with unpolarized light in such structures in the normal incidence geometry induces a spin in the QW plane along the [1[`1]0][1\bar 10] axis.     

自旋极化有机电致发光器件中单线态与三线态激子的形成及调控

由于有机半导体（OSC）材料自旋弛豫时间长、自旋扩散长度大,OSC自旋器件逐渐成为研究热点.对于有机电致发光器件（OLED）,通过自旋极化电极调控单线态和三线态激子比率是提高其效率的有效方法.本文从漂移扩散方程和载流子浓度连续性方程出发,结合朗之万定律建立了一个自旋注入、输运、复合的理论模型.计算了OSC中的极化电子、空穴浓度,得出了单线态和三线态激子的比率.分析了电场强度、自旋相关界面电导、电极和OSC电导率匹配和电极极化率等因素的影响.计算结果表明：两电极注入反向极化的载流子并提高载流子自旋极化率,有     

A possible origin of room temperature ferromagnetism in Indium-Tin oxide thin film: Surface spin polarization and ferromagnetism

Room temperature ferromagnetism in both transition-metals doped and undoped semiconductor thin films and nanostructures challenges our understanding of the magnetism in solids. In this report, we performed the magnetic measurement and Andreev reflection spectroscopy study on undoped Indium-Tin oxide (ITO) thin films and bulk samples. The magnetic measurement results of thin films show that the total magnetization/cm² is thickness independent. Prominent ferromagnetism signal was also discovered in bulk samples. Spin polarized electron transports were probed on ITO thin film/superconductor interface and bulk samples surface/superconductor interface. Based on the magnetic measurement results and spin polarization measurement data, we propose that the ferromagnetism in this material originates from the surface spin polarization and this surface polarization may also explain the room temperature ferromagnetism discovered in other undoped oxide semiconductor thin films and nanostructures.     

Field-induced negative differential spin lifetime in silicon

We show that the electric-field-induced thermal asymmetry between the electron and lattice systems in pure silicon substantially impacts the identity of the dominant spin relaxation mechanism. Comparison of empirical results from long-distance spin transport devices with detailed Monte?Carlo simulations confirms a strong spin depolarization beyond what is expected from the standard Elliott-Yafet theory even at low temperatures. The enhanced spin-flip mechanism is attributed to phonon emission processes during which electrons are scattered between conduction band valleys that reside on different crystal axes. This leads to anomalous behavior, where (beyond a critical field) reduction of the transit time between spin-injector and spin-detector is accompanied by a counterintuitive reduction in spin polarization and an apparent negative spin lifetime.     

Polarization and readout of coupled single spins in diamond

We study the coupling of a single nitrogen-vacancy center in diamond to a nearby single nitrogen defect at room temperature. The magnetic dipolar coupling leads to a splitting in the electron spin resonance frequency of the nitrogen-vacancy center, allowing readout of the state of a single nitrogen electron spin. At magnetic fields where the spin splitting of the two centers is the same, we observe a strong polarization of the nitrogen electron spin. The amount of polarization can be controlled by the optical excitation power. We combine the polarization and the readout in time-resolved pump-probe measurements to determine the spin relaxation time of a single nitrogen electron spin. Finally, we discuss indications for hyperfine-induced polarization of the nitrogen nuclear spin.     

Spintronics: electron spin coherence,entanglement, and transport

The prospect of building spintronic devices in which electron spins store and transport information has attracted strong attention in recent years. Here we present some of our representative theoretical results on three fundamental aspects of spintronics: spin coherence, spin entanglement, and spin transport. In particular, we discuss our detailed quantitative theory for spin relaxation and coherence in electronic materials, resolving in the process a long-standing puzzle of why spin relaxation is extremely fast in Al (compared with other simple metals). In the study of spin entanglement, we consider two electrons in a coupled GaAs double-quantum-dot structure and explore the Hilbert space of the double dot. The specific goal is to critically assess the quantitative aspects of the proposed spin-based quantum dot quantum computer architecture. Finally, we discuss our theory of spin-polarized transport across a semiconductor/metal interface. In particular, we study Andreev reflection, which enables us to quantify the degree of carrier spin polarization and the strength of interfacial scattering.     

Room Temperature High-Field Spin Dynamics of NV Defects in Sintered Diamonds

Sintered oriented nanodiamond arrays with the extremely high concentrations of the nitrogen-vacancy (NV) centers (up to 10³ ppm) were investigated by the W-band (94 GHz) electron spin echo electron paramagnetic resonance techniques. The NV centers were fabricated by the high-pressure high-temperature sintering of detonation nanodiamonds (DND) without the post or prior irradiation of the samples. The processes of polarization and recovery of the equilibrium population of the spin sublevels by optical and microwave pulses have been examined at room temperature in high magnetic fields corresponding to the fine-structure transitions for the NV defects at 94 GHz (3,250–3,450 mT). A long spin coherence time of 1.6 μs and spin–lattice relaxation time of 1.7 ms were measured. The results were compared with those obtained on the NV centers fabricated by the irradiation and subsequent annealing of the commercially available bulk diamonds. It was shown that the relaxation characteristics of the NV defects were similar in the both types of the samples despite the extremely high concentrations of NV defects and isolated nitrogen donors in the sintered DND.     

Spin-dependent recombination in GaAsN solid solutions

Room-temperature spin-dependent recombination in a series of GaAs_1?xN_x solid solutions (x = 2.1, 2.7, 3.4%) has been observed as manifested by a more than threefold decrease in intensity of the edge photoluminescence upon switching from circular to linear polarization of the exciting light or upon the application of a transverse magnetic field (～300 G). The interband absorption of the circularly polarized light is accompanied by the spin polarization of conduction electrons, which reaches 35% with an increase in the pumping level. The observed effects are explained in terms of the dynamic polarization of deep paramagnetic centers and the spin-dependent trapping of conduction electrons on these centers. The electron spin relaxation time, as estimated from the dependence of the edge photoluminescence depolarization in the transverse magnetic field (the Hanle effect) on the pumping intensity, is on the order of 1 ns. According to the adopted theory, the electron spin relaxation time in the presence of spin-dependent recombination is determined by a slow spin relaxation of localized electrons. The sign (positive) of the g factor of localized electrons has been experimentally determined from the direction of the magnetic-field-induced rotation of their average spin observed in the three GaAsN crystals studied.     

Spin accumulation in forward-biased MnAs/GaAs Schottky diodes

We describe a new means for all-electrical generation of spin polarization in semiconductors. In contrast with spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe accumulation at the metal-semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemporal Kerr microscopy is used to image the electron spin and the resulting dynamic nuclear polarization that arises from the nonequilibrium carrier polarization.     

Dynamic Nuclear Polarization in III–V Semiconductors

We report on electron spin resonance, nuclear magnetic resonance and Overhauser shift experiments on two of the most commonly used III–V semiconductors, GaAs and InP. Localized electron centers in these semiconductors have extended wavefunctions and exhibit strong electron–nuclear hyperfine coupling with the nuclei in their vicinity. These interactions not only play a critical role in electron and nuclear spin relaxation mechanisms, but also result in transfer of spin polarization from the electron spin system to the nuclear spin system. This transfer of polarization, known as dynamic nuclear polarization (DNP), may result in an enhancement of the nuclear spin polarization by several orders of magnitude under suitable conditions. We determine the critical range of doping concentration and temperature conducive to DNP effects by studying these semiconductors with varying doping concentration in a wide temperature range. We show that the electron spin system in undoped InP exhibits electric current-induced spin polarization. This is consistent with model predictions in zinc-blende semiconductors with strong spin–orbit effects.     

Equilibrium and Nonequilibrium Spin Polarization near Filling Factor 3/2

The spin polarization features of an electron system and the relaxation of nonequilibrium spin excitations near an even-denominator fractional state of 3/2 in a two-dimensional electron system based on the GaAs/AlGaAs heterostructure are experimentally investigated. It is shown that the 3/2 state is a singular point in the filling factor dependence of the spin ordering of the two-dimensional electron system, at which the spin subsystem is rearranged. A giant slowing down of the relaxation of spin excitations to the ground state is revealed in a certain range of filling factors near filling factor 3/2.     

Local spin polarization at surfaces probed by hollow atoms

The relaxation of hollow atoms produced by slow multiply charged ions impinging on surfaces produces characteristic Auger electron spectra. These spectra, which serve as fingerprints of the interaction, can be used to probe local spin ordering at surfaces by relating changes in the intensities of different spin states to local spin polarization at the surface. The area from which the electrons are captured is of the order of a few Angstrom(2), only. The potential of the method is illustrated by He(2+) and N(6+) ions interacting with a ferromagnetic Ni(110) crystal. From the Auger spectra we determine a spin polarization of approximately 90% at room temperature.     

Nondiffusive spin dynamics in a two-dimensional electron gas

We describe measurements of spin dynamics in the two-dimensional electron gas in GaAs/GaAlAs quantum wells. Optical techniques, including transient spin-grating spectroscopy, are used to probe the relaxation rates of spin polarization waves in the wave vector range from zero to 6x10(4) cm-1. We find that the spin polarization lifetime is maximal at a nonzero wave vector, in contrast with expectations based on ordinary spin diffusion, but in quantitative agreement with recent theories that treat diffusion in the presence of spin-orbit coupling.     

Spin polarization of semiconductor carriers by reflection off a ferromagnet

We present a theory of generation or alteration of the electron spin coherence and population in an n-doped semiconductor by reflection at the interface with a ferromagnet. The dependence of the spin reflection on the Schottky barrier height and the doping concentration in the semiconductor was computed for a generic model. The theory provides an explanation for the spontaneous electron spin coherence and nuclear polarization in the semiconductor interfaced with a ferromagnet and associated phenomena recently observed by time-resolved Faraday rotation experiments. The study also points to an alternative approach to spintronics different from spin injection.