离子束溅射制备Nb2O5光学薄膜的特性研究

研究了离子束溅射(IBS)制备的Nb₂O₅薄膜的光学特性、应力、薄膜微结构等特性,系统地分析了辅助离子源的离子束能量和离子束流对薄膜特性的影响.结果显示,在辅助离子源不同参数情况下,折射率在波长550 nm处为2.310—2.276,应力值为-281—-152 MPa.在合适的工艺参数下,消光系数可小于10^-4,薄膜具有很好的表面平整度.与用离子辅助沉积(IAD)制备的薄膜相比,IBS制备的薄膜具有更好的光学特性和薄膜微结构. 关键词： 2O₅薄膜')" href="#">Nb₂O₅薄膜 离子束溅射 光学特性 应力     

磁控溅射制备Y2O3-TiO2薄膜形貌的研究

室温下采用射频磁控溅射法,在硅衬底上制备了Y₂O₃-TiO₂氧化物复合薄膜.利用XRD(X-ray diffraction)和AFM( atomic force microscopy)分析观察了退火前后样品的物相、形貌等变化,讨论了致密薄膜的生长机理.实验发现,溅射功率越大,薄膜的平整度和致密度越好.对热处理前后样品的结晶结构和表面形貌的分析结果显示,在本实验参数范围内,随着溅射功率的增大,更多的Y₂O_{3关键词： 2}O₃-TiO₂薄膜')" href="#">Y₂O₃-TiO₂薄膜 表面形貌 原子力显微镜 磁控溅射     

蓝宝石基片上制备大面积Tl2Ba2CaCu2O8超导薄膜

在2英寸双面蓝宝石基片上采用CeO₂作为缓冲层制备了高质量Tl₂Ba₂CaCu₂O₈(Tl-2212)超导薄膜.以金属铈作为溅射靶材,采用射频磁控反应溅射法生长了c轴织构的CeO₂缓冲薄膜,并研究了不同生长条件对于CeO₂缓冲层的晶体结构及表面形貌的影响.超导薄膜采用直流磁控溅射和后热处理的方法制备.扫描电子显微镜(SEM)图像显示,超     

Ta2O5-PMMA复合栅绝缘层对OFETs性能的影响

选用五氧化二钽（Ta₂O₅）-聚甲基丙烯酸甲酯（PMMA）复合材料作为栅绝缘层制备了并五苯有机场效应晶体管（OFETs）。通过在Ta₂O₅表面旋涂一层PMMA可以降低栅绝缘层的表面粗糙度,增大其场效应晶体管的迁移率。研究了厚度在20~60 nm范围内的PMMA对复合绝缘层表面形貌、粗糙度以及器件电学性能的影响。结果表明,当PMMA厚度为40 nm时,器件的电学性能最佳。与单一的Ta₂O₅栅绝缘层器件相比,其场效迁移率由4.2×10^-2 cm²/（V·s）提高到0.31 cm²/（V·s）;栅电压增加到-20 V时,开关电流比由2.9×10²增大到2.9×10⁵。     

Al/ZnO:Al薄膜结构的荧光增强效应

利用物理气相沉积设备制备了Al/ZnO:Al薄膜样品,研究了该薄膜结构的发光特性。结果表明,在ZnO:Al薄膜表面镀一层Al岛薄膜可以增强其带边荧光,同时在475 nm附近产生蓝光峰。通过在Al岛薄膜和ZnO:Al薄膜之间引入一层5 nm的Ta₂O₅绝缘层可以使ZnO:Al薄膜的带边荧光和蓝光显著增强,并随着Ta₂O₅绝缘层厚度的增大而减弱。通过对Al/ZnO:Al样品进行退火处理可以使带边荧光和蓝光峰分别增强9倍和83倍。基于局域表面等离子体共振理论,计算了Al/ZnO:Al纳米结构的光学散射和吸收截面曲线。实验结果与理论计算相一致。     

In2O3/SnO2薄膜的制备及光谱反射性能研究

开展了在伪装网基布上镀In₂O₃/SnO₂薄膜的性能研究,系统分析了薄膜厚度对其光谱反射性能的影响;总结了薄膜厚度对In₂O₃/SnO₂薄膜表面形貌、光谱反射辐射性能的影响规律,为In₂O₃/SnO₂薄膜的红外伪装应用奠定了基础理论和实验依据. 关键词： 2O₃/SnO₂薄膜')" href="#">In₂O₃/SnO₂薄膜 红外反射特性 红外发射率 可见光—近红外透过率     

Al2O3薄膜/纳米Ag颗粒复合结构的光吸收谱及增强Raman散射光谱研究

Al₂O₃介质薄膜与纳米Ag颗粒构成的复合结构,被应用于表面增强Raman散射探测实验中,其中Al₂O₃介质薄膜对纳米Ag颗粒的吸收谱及增强Raman散射光谱的影响被特别关注.该复合结构的光学特性表征出纳米Ag颗粒的偶极振荡特性.从光吸收谱中可以看到,其共振吸收谱随Al₂O₃介质薄膜厚度增加而在整个谱域上发生红移,表明纳米Ag颗粒的周围介电常数随Al₂O₃介质薄膜厚度的增加而增大.采用罗丹明6G作为探针原子,6个Raman特征峰的平均增益值作为表征表面增强Raman散射衬底增益程度的量度.实验结果表明,Al₂O₃介质薄膜层的引入提高了纳米Ag颗粒的衬底介电常数,并引起了散射共振的增强,从而使表面增强Raman散射强度提高. 关键词： 纳米Ag薄膜 共振吸收 表面增强Raman散射 介电常数     

溶胶-凝胶法制备Sr2Bi4Ti5O18薄膜及其铁电性能研究

采用溶胶-凝胶法,在氧气氛中和层层晶化的工艺条件下,成功地制备了沉积在Pt/Ti/SiO₂/Si(100)衬底上的铁电性能优良的Sr₂Bi₄Ti₅O₁₈ (SBTi)薄膜,并研究了SBTi薄膜的微结构、表面形貌、铁电性能和疲劳特性.研究表明：薄膜具有单一的层状钙钛矿结构，且为随机取向；薄膜表面光滑，无裂纹，厚度约为725nm；铁电性能测试显示较饱和、方形的电滞回线，当外电场强度为275kV/cm时 关键词： 溶胶-凝胶法 铁电薄膜 2Bi₄Ti₅O₁₈')" href="#">Sr₂Bi₄Ti₅O₁₈     

YBa2Cu3O7-δ/LaAlO3和Tl2Ba2CaCu2O8/LaAlO3高温超导薄膜内的应变对其微波表面电阻影响的研究

YBa₂Cu₃O_7-δ/LaAlO₃ (YBCO/LAO) 超导薄膜是通过热蒸发沉积方法制备的,实验中使用的Tl₂Ba₂CaCu₂O₈/LaAlO₃ (TBCCO/LAO) 超导薄膜是通过直流磁控溅射方法制备的.通过分析两片超导薄膜的XRD谱计算出了两片超导薄膜内的应变,ΔC_{关键词： YBCO/LAO TBCCO/LAO 超导薄膜 应变 表面电阻}     

基于旋涂法和电子束蒸发法制备的V2O5/Ag/V2O5叠层透明导电薄膜

利用溶胶-凝胶技术与电子束蒸镀相结合的方法在常温下制备了叠层V₂O₅/Ag/V₂O₅（VAV）透明导电薄膜,研究了各层薄膜厚度对叠层结构光电特性的影响。用原子力显微镜、紫外-可见光分光光度计、四探针电阻仪及开尔文探针对样品的表面形貌、光电性能及功函数等性质进行了表征。实验结果表明,该薄膜具有良好的光学和电学性质,可见光（380~780 nm）平均透过率达75%,迁移率为16.89 cm²/（V·s）,载流子浓度为－1.043×10²² cm^-3,方块电阻值为15.1 Ω/□,功函数为5.17 eV。该制备方法降低了V₂O₅薄膜的工艺制备难度,为该材料在太阳能电池中的应用创造了良好的前期基础。     

Effects of O2/Ar ratio and annealing temperature on electrical properties of Ta2O5 film prepared by magnetron sputtering

The effects of the oxygen-argon ratio on electric properties of Ta2O5 film prepared by radio-frequency magnetron sputtering were investigated.The Ta2O5 partially transforms from the amorphous phase into the crystal phase when annealing temperatures are 800℃ or higher.The lattice constant of Ta2O5 decreases with the increase of the O2/Ar ratio,which indicates that oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies during the deposition process.For the films deposited in working gas mixtures with different O2/Ar ratios and subsequently annealed at 700℃,the effective dielectric constant is increased from 14.7 to 18.4 with the increase of the O2/Ar ratio from 0 to 1.Considering the presence of an SiO2 layer between the film and the silicon substrate,the optimal dielectric constant of Ta2O5 film was estimated to be 31.Oxygen gas in the working gas mixture contributes to reducing the density of oxygen vacancies,and the oxygen vacancy density and leakage current of Ta2O5 film both decrease with the increase of the O2/Ar ratio.The leakage current decreases after annealing treatment and it is minimized at 700℃.However,when the annealing temperature is 800℃ or higher,it increases slightly,which results from the partially crystallized Ta2O5 layer containing defects such as grain boundaries and vacancies.     

Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks

Hf-doped Ta₂O₅ thin films are studied with respect to their composition, dielectric and electrical properties. The incorporation of Hf is performed by sputtering of a 0.7 nm thick Hf layer on top of Ta₂O₅ and subsequent annealing to stimulate diffusion of Hf into Ta₂O₅ and their intermixing. The elemental in-depth distribution of the films is investigated by the time of flight secondary ion mass spectroscopy (ToF-SIMS), which has revealed that Hf and Ta₂O₅ are intermixed throughout the whole thickness. Two sub-layers exist in all the samples - an upper homogeneous Hf-doped Ta₂O₅ sub-layer and a near interfacial region which is a mixture of Ta- and Si-oxides. The X-ray reflectivity (XRR) analysis shows existence of interfacial layer with a thickness of about 1.9-2 nm, irrespectively of the total thickness of the stacks. Metal-oxide-Si structures with Ru and RuO₂ metal electrodes have been prepared and investigated in terms of dielectric constant, effective work function (EWF) and interfacial layer parameters. The influence of post-metallization annealing steps on these parameters was also studied.     

Optical characteristics of amorphous V2O5 thin films colored by an excimer laser

The V₂O₅ films were prepared by an RF sputtering method, and the amorphous films were colored by an UV excimer laser. The crystallinity of the as-grown V₂O₅ film was degenerated greatly by laser irradiation, as determined by X-ray diffraction (XRD) and Raman studies. The transmission and complex refractive index spectra of the V₂O₅ film were affected by variations in the microstructure, including the surface morphology, crystalline structure, and substoichiometry with an oxygen deficiency. Considerable emissions due to oxygen vacancies and band transition of photoluminescence (PL) peaks were observed, and the peaks were significantly changed after laser irradiation. The variations in the optical properties in both films may be attributed to oxygen deficiency induced by laser irradiation.     

射频反应性溅射沉积的Cd2SnO4薄膜物理性质与缺陷特性研究

在Ar+O₂混合气氛中射频反应性溅射Cd-Sn合金靶制备了透明导电Cd₂SnO₄(简称CTO)薄膜。用X射线衍射测量了CTO膜的结构。实验结果表明,这种薄膜的电学和光学性质依赖于混合气体中的氧浓度、衬底温度以及沉积后的热处理。获得的CTO膜最低电阻率为1.74×10^-6Ω·cm,可见光光谱区最高透射率为95％。对于氧浓度为6％、衬底温度为400℃时沉积的CTO膜,经热处理后,其光隙能由热处理前的2.37eV增大为2.6 关键词：     

Enhanced optical properties of Al-doped TiO2 thin films in oxygen or nitrogen atmosphere

Al-doped TiO₂ (TiO₂:Al) films were deposited by simultaneous RF magnetron sputtering of TiO₂ and DC magnetron sputtering of Al. The advantage of this method is that the Al content could be independently controlled. By depositing in a mixed Ar-O₂ or a mixed Ar-N₂ atmosphere, the TiO₂:Al film became more stoichiometric and the nanocrystallinity was enhanced. The nonlinear refractive index of TiO₂:Al film deposited in a pure Ar, a mixed Ar-O₂ or a mixed Ar-N₂ atmosphere was measured by Moiré deflectometry, and was of the order of 10⁻⁸ cm² W⁻¹. For the TiO₂:Al film deposited in a pure Ar atmosphere, the porosity was higher corresponding to the lower transmission. However, the porosity of TiO₂:Al film decreased as the oxygen or nitrogen pressure increased. Especially, as the ratio of O₂ to Ar pressure increased to 0.22, TiO₂:Al film exhibited lower porosity, higher visible transmission, higher linear refractive index, lower stress and lower stress-optical coefficient.     

氧氩比对SnO2/Ag/SnO2透明导电膜光电性能的影响

在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO₂层,在载玻片衬底上制备出了SnO₂/Ag/SnO₂多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1:14时,所制得的薄膜的光电性质优良指数最大,为1.69×10^-2 Ω^-1;此时,薄膜的电阻率为9.8×10^-5 Ω·cm,方电阻为9.68 Ω/sq,在400~800 nm可见光区的平均光学透射率达85%;并且,在氧氩比为1:14时,利用射频磁控溅射Ag层和直流磁控溅射SnO₂层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85%以上,电阻率为1.22×10^-4 Ωcm,方电阻为12.05 Ω/sq.     

Zn掺杂β-Ga2O3薄膜的制备和特性研究

β-Ga₂O₃是一种宽带隙半导体材料,能带宽度E_g≈5.0eV,在光学和光电子学领域有广泛的应用。用射频磁控溅射方法在Si衬底和远紫外光学石英玻璃衬底制备了本征β-Ga₂O₃薄膜及Zn掺杂β-Ga₂O₃薄膜,用紫外 可见分光光度计、X射线衍射仪、荧光分光光度计对本征β-Ga₂O₃薄膜及Zn掺杂β-Ga₂O₃薄膜的光学透过、光学吸收、结构和光致发光进行了测量,研究了Zn掺杂和热退火对薄膜结构和光学性质的影响。退火后的β-Ga₂O₃薄膜为多晶结构,与本征β-Ga₂O₃薄膜相比,Zn掺杂β-Ga₂O₃薄膜的β-Ga₂O₃(111)衍射峰强度变小,结晶性变差,衍射峰位从35.69°减小至35.66°。退火后的Zn掺杂β-Ga₂O₃薄膜的光学带隙变窄,光学透过降低,光学吸收增强,出现了近边吸收,薄膜的紫外、蓝光及绿光发射增强。表明退火后Zn掺杂β-Ga₂O₃薄膜中的Zn原子被激活充当受主。     

Determination of optical functions of very thin tantalum pentoxide films on platinum substrate by genetic algorithm approach

We study the optical characteristics of tantalum pentoxide films, deposited by reactive sputtering. These films, as many other metal oxide layers, are promising candidates for optical devices in the spectral region where they have no absorption. Besides applications in modern optics, they are also investigated as high-kappa materials for the needs of nano-electronics, i.e. design of dynamic random access memories, etc. Herein, we present results on optical functions of Ta₂O₅ films with physical thickness of ~15 nm. The spectral range of evaluation covers 210–750?nm. We have estimated the Ta₂O₅ optical functions from spectro-photometric data. The Tauc–Lorentz–Urbach parametric model was used in the fitting procedure, which was based on the stochastic genetic algorithm.     

Effect of different annealing methods on ferroelectric properties of 0.95Pb(Sc0.5Ta0.5)O3-0.05PbTiO3 thin films

0.95Pb(Sc_0.5Ta_0.5)O₃-0.05PbTiO₃ thin films were prepared on LaNiO₃/SiO₂/Si substrate by radio frequency magnetron sputtering, and the films were annealed subsequently with repeated many times by two approaches: normal one-step rapid thermal annealing and innovative two-steps rapid thermal annealing. X-ray diffraction demonstrates that all the films were preferred (1 0 0) oriented and an appropriate repeat of annealing process can enhance perovskite phase of the films. Scanning electron microscopy suggests that the films treated by two-steps rapid thermal annealing show crack-free, uniform size grains and dense microstructure. Measurement of remnant polarization and leakage current dependence of electric field confirms that the films treated by two-steps rapid thermal annealing exhibit better ferroelectric properties than the films treated by one-steps rapid thermal annealing. The results reveal that microstructure plays an important role in enhanced ferroelectric properties of the 0.95Pb(Sc_0.5Ta_0.5)O₃-0.05PbTiO₃ thin films.