A Polaron in a Quantum Dot Quantum Well

The polaron effect in a quantum dot quantum well (QDQW)system is investigated by using the perturbation method. Both the bound electron states outside and inside the shell well are taken into account . Numerical calculation on the CdS/HgS QDQW shows that the phonon correction to the electron ground state energy is quite significant and cannot be neglected.     

Photoluminescence of tetrahedral quantum-dot quantum wells

Taking into account the tetrahedral shape of a quantum-dot quantum well (QDQW) when describing excitonic states, phonon modes, and the exciton-phonon interaction in the structure, we obtain within a nonadiabatic approach a quantitative interpretation of the photoluminescence spectrum of a single CdS/HgS/CdS QDQW. We find that the exciton ground state in a tetrahedral QDQW is bright, in contrast to the dark ground state for a spherical QDQW. The position of the phonon peaks in the photoluminescence spectrum is attributed to interface optical phonons. We also show that the experimental value of the Huang-Rhys parameter can be obtained only within the nonadiabatic theory of phonon-assisted transitions.     

量子点量子阱中的三阶非线性光学特性的研究

利用紧致密度矩阵近似方法，研究了一个特殊量子点量子阱中的三阶非线性光学特性(三次谐波产生)，得到了量子点量子阱系统的三次谐波产生系数的解析表达式，而且考虑了量子点量子阱系统中的两种电子束缚态-壳层阱内与阱外两种束缚态。对CdS/HgS构成的典型的量子点量子阱进行了数值计算，得到了10^-15(m／v)^2量级的三次谐波产生系数，并且绘出了三次谐波产生系数作为量子点量子阱的尺寸和泵浦光子能量的函数曲线，最后对曲线的特征及其形成的原因进行了解析。     

圆柱状量子点量子导线复合系统的激子能量和电子概率分布

建立了圆柱状量子点量子导线复合系统中激子满足的方程，用微扰论求出激子能量.以CdS/HgS/CdS/HgS/CdS圆柱状量子点量子导线复合系统为例，研究了系统中电子的概率分布和系统线度对激子能量的影响.结果表明：系统中电子、空穴以及激子的能量均随量子点高度h₀的增大而减小，电子-空穴相互作用对基态激子能量的影响要大于激发态；电子沿径向方向的概率分布呈起伏状，在轴线和表面附近的概率趋于零，而在R/2附近概率最大；在量子点附近电子沿轴向方向的概率分布呈振荡特征 关键词： 量子点 量子导线 激子 能量     

CdSe/HgSe/CdSe量子点量子阱(QDQW)晶粒的光学性质和电子结构

以CdSe纳米晶体为核,用胶体化学的方法,通过化学替代反应,获得了不同阱层或不同垒层的CdSeHgSeCdSe量子点量子阱(QDQW)晶体.紫外可见光吸收谱研究表明,通过调节QDQW中间HgSe阱层的厚度从0.9nm至0,可以调节QDQW颗粒的带隙从1.8变化至2.1eV,实现QDQW纳米晶体的剪裁.光致荧光(PL)谱研究显示,QDQW形成后,CdSeHgSe纳米颗粒表面态得到钝化,显现出发光强度加强的带边荧光峰.利用有效质量近似模型,对QDQW晶粒内部电子的1s—1s态进行了估算,估算结果总体趋势与实验数据相符 关键词： 量子点量子阱晶体 能带剪裁 加强的带边荧光峰     

Parameter-dependent photon echo induced in CdSe/ZnS quantum dot quantum well

The two pulse photon echo (2PPE) phenomena induced by the 1s-1s electronic transition in CdSe/ZnS quantum dot quantum well (QDQW) has been studied by employing semiconductor Bloch equations. The energy eigenvalues and eigenfunctions of electrons and holes have been obtained by solving the stationary Schrödinger equation under effective-mass approximation. The Coulomb interaction, which changes with the size variation of QDQW, has been calculated and analyzed as a perturbation. The variations of the electric transition dipole moment and the energy interval with the changing of the size and structure of the QDQW have also been obtained. It has been shown from the numerical calculation results that the efficiency of 2PPE can be controlled by the variation of the size and structure of the QDQW and the mechanism has been explained in terms of the quantum size confined effect (QSCE) theory.     

Surface and interface optical phonon modes and electron-phonon interaction in a multi-shell spherical system

Within the framework of the dielectric continuum model, interface optical(IO) and surface optical(SO) phonon modes and the Fr?hlich electron-IO (SO) phonon interaction Hamiltonian in a multi-shell spherical system were derived and studied. Numerical calculation on CdS/HgS/H₂O and CdS/HgS/CdS/H₂O spherical systems have been performed. Results reveal that there are two IO modes and one SO mode for the CdS/HgS/H₂O system, one SO mode and four IO modes whose frequencies approach the IO phonon frequencies of the single CdS/HgS heterostructure with the increasing of the quantum number l for CdS/HgS/CdS/H₂O. It also showed that smaller l and SO phonon compared with IO phonon, have more significant contribution to the electron-IO (SO) phonon interaction. Received 16 October 2001 and Received in final form 23 January 2002 Published online 25 June 2002     

Ground state of excitons in quantum-dot quantum-well nanoparticles： stochastic variational method

Within the framework of effective mass approximation, the ground state of excitons confined in spherical core-shell quantum-dot quantum-well (QDQW) nanoparticles is solved by using the stochastic variational method, in which the finite band offset and the heavy (light) hole exciton states are considered. The calculated 1s_e－1s_h transition energies for the chosen CdS/HgS/CdS QDQW samples are in good agreement with the experimental measurements. Moreover, some previous theoretical results are improved.     

Well width‐dependent electron Raman scattering in ZnS/CdSe cylindrical quantum dot quantum well

Electron Raman scattering (ERS) is investigated in ZnS/CdSe cylindrical quantum dot quantum well (QDQW). The differential cross section (DCS) is calculated as a function of the scattering frequency and the sizes of QDQW. Single parabolic conduction and valence bands are assumed. Different scattering configurations are discussed and the selection rules for the processes are also studied. Singularities in the spectrum are found and interpreted. The ERS studied here can be used to provide direct information about the electron band structure of these systems. Copyright © 2008 John Wiley & Sons, Ltd.     

Pressure-induced threshold optical pump intensity in a CdTe/ZnTe quantum dot

Pressure-induced binding energies of an exciton and a biexciton are studied taking into account the geometrical confinement effect in a CdTe/ZnTe quantum dot. Coulomb interaction energy is obtained using Hartree potential. The energy eigenvalue and wave functions of exciton and the biexciton are obtained using the self-consistent technique. The effective mass approximation and BenDaniel-Duke boundary conditions are used in the self-consistent calculations. The pressure-induced nonlinear optical absorption coefficients for the heavy hole exciton and the biexciton as a function of incident photon energy for CdTe/ZnTe quantum dot are investigated. The optical gain coefficient with the injection current density, in the presence of various hydrostatic pressure values, is studied in a CdTe/ZnTe spherical quantum dot. The pressure-induced threshold optical pump intensity with the dot radius is investigated. The results show that the pressure-induced electronic and optical properties strongly depend on the spatial confinement effect.     

Bound polaron in a spherical quantum dot under an electric field

A variational approach is used to study the ground state of a bound polaron in a spherical quantum dot under an external electric field. The binding energy of the hydrogenic impurity state is calculated by taking the interaction of an electron with both the confined longitudinal optical phonons and the surface optical phonons into account. The interaction between impurity and longitudinal optical phonons has also been considered to obtain the binding energy of a bound polaron. It shows that the polaron effects give significant corrections to the binding energy and its Stark energy shift. The external electric field increases the phonon contributions to the binding energy.     

Spectrum of an electron in a superlattice along a cylindrical quantum wire

The quasi-one-dimensional superlattice of two contacting semiconductor materials along a cylindrical quantum wire (using the example of CdS/HgS) is investigated. It is shown that the energy center of the electron is an alternation of allowed and forbidden bands. The dispersion law for different values of the period of the potential and the radius of the quantum wire is investigated. A transition to the Kronig-Penney model is obtained. The effective masses of the electrons of different bands are found. Chernovits State University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 96–103, February, 1998.     

Surface enhanced Raman scattering by CdS quantum dots

Surface enhanced Raman scattering is studied in nanostructures with CdS quantum dots formed using the Langmuir-Blodgett technology. Features due to quantum dot longitudinal optical phonons are observed in the Raman spectra of both free CdS quantum dots and such dots distributed in an organic matrix. The surface enhanced Raman scattering by nanostructures with CdS quantum dots covered by an Ag cluster film is observed experimentally. Applying Ag clusters onto the nanostructure surfaces results in a sharp (40-fold) increase in the intensity of Raman scattering by optical phonons in the quantum dots. It is shown that the dependence of surface enhanced Raman scattering on the excitation energy is resonant with a maximum at the energy corresponding to the maximum absorption coefficient of Ag clusters.     

On the binding energies of excitons in polar quantum well structures in a weak electric field

The binding energies of excitons in quantum well structures subjected to an applied uniform electric field by taking into account the exciton longitudinal optical phonon interaction is calculated. The binding energies and corresponding Stark shifts for Ⅲ-Ⅴ and Ⅱ-Ⅵ compound semiconductor quantum well structures have been numerically computed. The results for GaAs/A1GaAs and ZnCdSe/ZnSe quantum wells are given and discussed. Theoretical results show that the exciton-phonon coupling reduces both the exciton binding energies and the Stark shifts by screening the Coulomb interaction. This effect is observable experimentally and cannot be neglected.     

Interface Optical Phonon Modes and Frohlich Electron-Phonon Interaction Hamiltonian in a Multi-shell Spherical Nanoheterosystem

Under dielectric continuum approximation, interface optical (IO) phonon modes and the Frohlich electron-IO phonon interaction Hamiltonian in a multi-shell spherical nanoheterosystem were derived and studied. Numericalcalculations on three-layer and four-layer CdS/HgS spherical nanoheterosystems have been performed. Results revealthat there are four IO phonon modes for the three-layer system and six IO phonon modes for the four-layer system.On each interface, there are two IO phonon modes, the frequency of one is between WTO,CdS and WLO,CdS, and that ofthe other is between WTO,HgS and WLO,HgS. With the increasing of quantum number l, the frequency of each IO modeapproaches one of the two frequency values of the single CdS/HgS heterostructure, and the potential for each IO modeis more and more localized at a certain interface, furthermore, the coupling between the electron-lO phonons becomes weaker.     

Photoluminescence quantum and surface states of excitons in ZnSe and CdS nanoclusters

The optical spectra of quantum dots (QDs) of CdS and ZnSe grown in borosilicate glass by the sol-gel method are obtained and analyzed. It is found that at concentrations of the two semiconductors x<0.06% the emission spectra are due to annihilation of free (internal) excitons in quantum states. The mean size of the quantum dots for a given concentration of ZnSe and CdS is calculated and found to be in good agreement with the X-ray data, and the exciton binding energy is calculated with allowance for the dielectric mismatch between the semiconductor and matrix. It is proposed that this mismatch may be the cause giving rise to the exciton percolation level that is observed in QD arrays for both systems at x>0.06%. The emission from the surface level of CdS QDs in the region ~2.7 eV, formed by the outer atoms with dangling bonds, is observed for the first time, as is the emission band from surface localized states. The relation between the position of the maximum of this band and the energy of the 1S state of the free exciton is established. It is shown that the properties of surface localized states are largely similar to the analogous properties of localized states of 3D (amorphous semiconductors, substitutional solid solutions of substitution) and 2D (quantum wells and superlattices) structures.     

ZnSe/ZnS抛物量子阱中激子的极化子效应(英文)

采用推广的LLP方法研究了ZnSe/ZnS抛物量子阱中激子的极化子效应。考虑电子和空穴与LO声子的相互作用,得到了激子基态能量和结合能随阱宽的变化关系。结果表明,阱宽较小时,能量随着阱宽的增大而急剧减小;阱宽较大时,能量减小的比较缓慢。和我们以前的工作对比,我们发现ZnSe/ZnS抛物量子阱对激子的束缚强于GaAs/Ga1-xAlxAs抛物量子阱。     

Size-dependent electronic and optical properties of an exciton in CdSe/CdS/CdSe/CdS multilayer spherical quantum dot

The electronic and optical properties of a single exciton in a CdSe/CdS/CdSe/CdS quantum dot is studied by using effective mass approximation with parabolic confinement. The Coloumbic interaction between electron and hole is included by Hartree potential. A self-consistent technique is used to calculate the energy eigenvalue and wavefunction of exciton. Based on this approximation we investigate the effect of core size, shell thickness, well width on exciton binding energy, absorption spectra, and oscillator strength. The results provide the tuning possibility of electronic and optical properties of multilayer quantum dot with layer thickness.     

High-temperature all-optical intersubband quantum well Terahertz switch

In this article an asymmetric intersubband quantum well structure as a high temperature terahertz (THz) optical switch is proposed. In our proposed structure the incoming low power energy photon (THz control signal) causes an optical switching. In this structure we introduce an optical terahertz switch based on coherent population trapping (CPT) phenomena. In the presence of electromagnetic THz field, quantum interference between the terahertz control field and short-wavelength probe field under appropriate condition, the medium becomes transparent (zero absorption) for the probe field. So the absorption and refraction characteristic of optical probe field can be modified with THz radiation. Therefore this idea is suitable for all – optical terahertz switching.     

Characteristics of degenerated four wave mixing in ZnS/CdSe/ZnS quantum dot quantum well with multi-shell structure

The wave functions and eigenenergies of electrons in ZnS/CdSe/ZnS cylindrical quantum dot quantum well (QDQW) have been calculated by solving a three-dimensional nonlinear Schrödinger equation, in the framework of the effective-mass envelope-function theory. The third-order susceptibilities of the degenerated four waves mixing (DFWM) have been calculated theoretically by means of compact density matrix. The third-order susceptibilities as the function of the shell radius R₂, R₃ have been analyzed. The results show that the magnitude of nonlinear susceptibility is increased with the increasing of well radius. The resonance frequency of the photon have a shift when R₂ or R₃ is increasing and the relation between nonlinear susceptibility and relaxation time has also been studied.