ZnS/CdSe量子点中线性和三阶非线性光吸收系数研究

在有效质量近似下,利用量子力学的密度矩阵理论,采用无限深势阱模型,从理论上研究了ZnS/CdSe柱型核壳结构量子点中线性和三阶非线性光吸收系数。导出了柱型量子点中线性和三阶非线性光学吸收系数的解析表达式,分析了该系统在不同条件下线性和三阶非线性光吸收系数与入射光频率之间的关系。改变系统的参数,该系统的光吸收系数呈规律性变化。计算结果表明:弛豫时间τ、入射光强I和壳半径R2对系统的吸收系数α有很大的影响,从而为实验上研究核壳结构量子点的非线性光学效应提供了必要的理论依据。     

Linear and Nonlinear Optical Absorptions of a Donor Impurity in Spherical Quantum Dots

An investigation of the optical properties of a hydrogenic donor in spherical parabolic quantum dots has been performed by using the matrix diagonalization method. The optical absorption coefficient between the ground （L = 0） and the first excited state （L = 1） have been examined based on the computed energies and wave functions. The results are presented as a function of the incident photon energy for the different values of the confinement strength. These results show the effects of the quantum size and the impurity on the optical absorption coefficient of a donor impurity quantum dot.     

Coherent Interband and Intersubband Dynamics in Terahertz-Driven GaAs Quantum Wells

We theoretically investigate the optical absorption spectra and charge density by subjecting a GaAs quantum well to both an intense terahertz (THz)-frequency driving field and an optical pulse within the theory of density matrix. In presence of a strong THz field, the optical transitions in quantum well subbands are altered by the THz field. The alteration has a direct impact on the optical absorption and the charge density. The excitonic peak splitting and THz optical sideband in the absorption spectra show up when changing the THz field intensity and/or frequency. The Autler-Towns splitting is a result from the THz nonlinear dynamics of confined excitons. On the other hand, the carrier charge density is created as wave packets formed by coherent superposition of several eigenstates. The charge density exhibitsquantum beats for short pulses and/or wider wells and is modulated by the THz field.     

量子点量子阱中的三阶非线性光学特性的研究

利用紧致密度矩阵近似方法,研究了一个特殊量子点量子阱中的三阶非线性光学特性(三次谐波产生),得到了量子点量子阱系统的三次谐波产生系数的解析表达式,而且考虑了量子点量子阱系统中的两种电子束缚态-壳层阱内与阱外两种束缚态。对CdS/HgS构成的典型的量子点量子阱进行了数值计算,得到了10^-15(m／v)^2量级的三次谐波产生系数,并且绘出了三次谐波产生系数作为量子点量子阱的尺寸和泵浦光子能量的函数曲线,最后对曲线的特征及其形成的原因进行了解析。     

量子限制斯达克效应对三角形量子阱吸光特性的影响

本文通过计算量子力学波动方程以及载流子传输特性,哈密顿量的H能谱图和边界条件等的理论方法来分析量子限制斯达克效应对三角形量子阱体系吸收特性的影响,说明了选择合适的量子阱垒层对于提高三角形量子阱吸光率具有重要的意义。     

PbTe/CdTe量子阱光学性质的研究

PbTe/CdTe量子阱是一类新型异系低维结构材料,实验观察到具有强的室温中红外光致发光现象.建立了理论模型,计算了PbTe/CdTe量子阱的自发辐射率和光学增益.模型中量子阱分立能级的计算采用k·p包络波函数方法和有限深势阱近似,考虑了PbTe能带结构的各项异性和阱层中应变对能级的影响.计算了PbTe/CdTe量子阱自发辐射谱与带间弛豫和注入载流子浓度间的依赖关系,计算结果与实验观察到的光致发光峰相符合.自发辐射谱线峰位随着注入载流子浓度的增加而出现蓝移,当载流子浓度从2×1017cm-3增加到2.8×1018cm-3,基态发射峰从372 meV蓝移到397 meV,而第一激发态发射峰蓝移量为15 meV.上述蓝移现象是由载流子与载流子及载流子与声子间的相互作用引起的.与PbTe体材料相比.PbTe/CdTe量子阱结构具有更高的增益强度(提高近15倍)和更宽的增益区,因而该体系可能是实现室温连续工作的中红外激光器的理想材料.     

量子盘中的三阶非线性光学极化率

利用密度矩阵方法讨论了量子盘中的三阶非线性光学极化率,导出了近共振条件下的三次揩波的解析表达式,并以GaAs量子盘为例进行了具体的计算。结果表明,GaAs量子盘中的三阶非线性光学极化率要比GaAs量子阱的大几十倍。而且,选取适当的参量,可在吸收系数相对较小的情况下获得较大的折射率。     

Morse势阱中的光检波效应

利用量子力学中的密度矩阵算符理论和迭代方法,得到Morse势阱中的光检波系数的解析表达式。并以典型的GaAs/AlGaAs莫尔斯量子阱为例进行数值计算。研究结果表明,较大的光检波系数与系统的非对称性有关,系统的非对称性越大,光检波系数越大。     

氮化物半导体耦合量子阱中非线性光整流特性:压电效应与自发极化效应

考虑了由于压电与自发极化引起的强内电场效应,基于密度矩阵与久期处理方法,理论考察了纤锌矿氮化物半导体耦合量子阱体系的非线性光整流特性。根据已经成功建立的耦合量子阱的内建电场模型,精确求解了体系的电子本征态。以典型的GaN/InxGa1-xN纤锌矿氮化物耦合量子阱为例进行了数值计算,结果发现共振光整流系数达到了10-6m/V的量级(体系的偶极矩阵元大小超过了2nm),这比同样尺寸的单氮化物量子阱的相应值高一个数量级。而且,计算还发现光整流系数对耦合量子阱的结构与掺杂组分呈现非单调的依赖关系,这一特性被归结为体系的强内建电场与量子尺寸效应对载流子受限特性的强烈竞争。计算结果还表明,通过选择小尺寸阱宽与垒宽的耦合量子阱,适当降低掺杂组分,可在氮化物耦合量子阱中获得较强的光整流效应。     

基于GaAs-AlGaAs非对称耦合量子阱材料的半导体弱光开关

提出了一种基于在GaAs-AlGaAs非对称耦合量子阱材料子带跃迁的量子干涉的半导体弱光开关，分析了驰豫速率γ21对光开关的影响，这种半导体弱光开关是半导体超晶格材料共振隧穿作用导致的子带跃迁的Fano干涉的结果，由于半导体结构与材料可以人为地选择，相干强度可以控制和改变，这种半导体弱光开关比采用原子系统更实用，这也是一种在半导体材料中实现一束光控制另一束光的方法。     

加偏置电场量子阱中的电光效应

利用量子力学中密度矩阵方法研究了加偏置电场的量子阱中电光效应的解析表达式,并以典型的GaAs量子阱为例进行了数值计算.研究结果表明,电光效应随偏置电场的增大和阱宽的减小而增强,通过调节阱宽和偏置电场的强度,在该系统中可以获得一个大的电光效应系数.     

Linear and Nonlinear Optical Properties in Spherical Quantum Dots

We calculate the energy eigenvalues and the sate functions of one-electron Quantum Dot （QD） by using a combination of Quantum Genetic Algorithm （QGA） and Hartre-Fock-Roothaan （HFR） method. The linear and the third-order nonlinear optical absorption coefficients for the 1s-1p, 1p-1d, and 1d-1f transitions are examined as a function of the incident photon energy for three different values of the stoichiometric ratio. The results show that the stoichiometric ratio, impurity, relaxation time, and dot size have great influence on the optical absorption coefficients of QDs.     

非对称耦合量子阱Zn1-xCdxSe/ZnSe的二次谐波产生及其光学各向异性研究

采用反射式二次谐波产生方法对非对称Ⅱ-Ⅵ族耦合量子阱Zn1-xCdxSe/ZnSe的非线性光学特性进行了研究。与衬底相比,非对称量子阱在可见光波段的二次谐波信号增强一个量级以上。测量和比较了室温下量子阱样品与衬底样品的荧光光谱,研究了在入射光和反射光均为p偏振,以及入射光和反射光分别为s偏振和p偏振两种情况下,二次谐波强度随样品旋转方位角的变化关系,可见其有非常明显的二阶非线性一光学各向异性。     

非对称ZnO/ZnMgO双量子阱内量子效率的提高

在c-plane面蓝宝石衬底上生长了ZnO/Zn0.85Mg0.15O非对称双量子阱,其内量子效率相对于对称量子阱有了显著的提高。ZnO/Zn0.85Mg0.15O的10周期对称量子阱和5周期非对称双量子阱都是利用等离子体辅助分子束外延技术制备的。ZnO/Zn0.85Mg0.15O非对称双量子阱的内量子效率提高至对称阱的1.56倍。时间分辨光谱和光致发光谱测试结果证实,在ZnO/Zn0.85Mg0.15O非对称双量子阱中存在从窄阱到宽阱的激子隧穿过程,这是内量子效率提高的主要原因。     

Nonlinear Intersubband Transitions in Square and Graded Quantum Wells Modulated by Intense Laser Field

There has been increasing interest, both exper- imentally and theoretically, in the investigation of low-dimensional semiconductor heterostructures due to their intrinsic physical properties and technological applications in electronic and optoelectronic devices. The studies on quantum heterostructures have opened a new field in fundamental physics, and also offer a wide range of potential applications for optoelectronic devices. By varying the profile of a semiconductor quantum well （QW）, both the subband state energies and their wave functions change, and so do various physical properties depending on them.     

Nonlinear intersubband optical absorption in semiparabolic quantum wells

The linear and third-order nonlinear optical absorptions in semiparabolic quantum wells are studied in detail. Analytic formulas for the linear and third-order nonlinear optical absorption coefficients are obtained using the compact density matrix approach. Based on this model, numerical results are presented for typical GaAs/AlGaAs semiparabolic quantum wells. The results show that the factors of the incident optical intensity and the semiparabolic confinement frequency have great influences on the total optical absorption coefficients.     

Bound States and the Third Harmonic Generation in an Electric Field Biased Semi-parabolic Quantum Well

Within the framework of the compact density matrix approach, the third-harmonic generation (THG) in an electric-field-biased semi-parabolic quantum well (QW) has been deduced and investigated. Via variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field have also been obtained and discussed. Numerical results on typical GaAs material reveal that, electric fields and confined potential frequency of semi-parabolic Q W have obvious influences on the energy levels of electronic states and the THG in the semi-parabolic Q W systems.     

多量子阱光学波导中的模式截止

导出了两种材料构成的多量子阱光波导的模式截止方程，并讨论了Ｓｉ衬底上生长的应变ＧｅｘＳｉ１－ｘ／Ｓｉ多量子阱光波导的模式截止特性。     

正切平方量子阱中三次谐波产生的研究

用量子力学中的密度矩阵算符理论推导出了正切平方量子阱中三次谐波产生的解析表达式,并以典型的GaAs正切平方量子阱为例进行数值计算.计算结果表明,该势阱中的三次谐波系数与势阱深度y0、势阱宽度b和弛豫常数(Π)Γ有关.通过调节V0、b和(Π)Γ可以获得比较大的三次谐波系数,从而为实验研究和实际生产提供必要的理论依据.