Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows

Wurtzite (w) and zincblende (zb) InN films have been grown on (011) SrTiO₃ (STO) substrates by metal-organic chemical vapor deposition, the epitaxial relationships and optical properties are characterized by X-ray diffraction (XRD), absorption and photoluminescence (PL). Based on XRD θ–2θ and Φ scanning results, the epitaxial relationships between (w- and zb-) InN films and STO substrates are determined, that is, (0001)[1120] _w-InN//(011)[100]_STO and (100)[011]_zb-InN//(011)[100]_STO(100)[011]_{\mathit{zb}\mbox{-}\mathrm{InN}}//(011)[100]_{\mathrm{STO}}. Compared with the w-InN films, the zb-InN films exhibit a red shift in absorption edge and PL spectra, and a much narrower and stronger PL spectrum, implying a better optical quality of zb-InN films. The structure transition is supposed to be due to the difference in atom and bond areal density between the crystal plane of w-InN(0001) and zb-InN(100).     

Tunable THz metamaterials based on an array of paraelectric SrTiO<Subscript>3</Subscript> rods

This work presents theoretical and experimental investigations of a tunable metamaterial which exhibits negative permeability in the THz frequency range. The tunability is obtained by temperature changes, and the sample consists of an array of high-permittivity SrTiO₃ (STO) rods micromachined by a femtosecond laser. Structures exhibiting a negative permeability on multiple frequency bands are also investigated and a proper choice of the dimensions of the pattern allows us to achieve a substantial broadening of the frequency band with negative μ.     

First comparison of electric field induced second harmonic of near-infrared femtosecond laser pulses in reflection and transmission generated from Si/SiO<Subscript>2</Subscript> interfaces of a silicon membrane

For the first time electric field induced second harmonic (EFISH) generation of femtosecond (fs) laser pulses (λ=800 nm, τ=75±5 fs, rep. rate=80 MHz, E _pulse≤10 nJ) is observed in transmission through a thin free-standing silicon (Si) membrane of 10-μm thickness and compared to the well-known EFISH results in reflection by use of the z-scan technique. EFISH in reflection and transmission unequivocally originate from the front and rear Si/SiO₂ interfaces, respectively, with SiO₂ being the natural oxide on the Si surfaces. Frequency conversion is enhanced by photoinduced electric fields across the Si/SiO₂ interfaces caused by charge-carrier injection from Si into the oxide. The z-scan results and time-dependent measurements allow comparison of the EFISH signal amplitudes and time constants detected in transmission and reflection, demonstrating the need for further investigation.     

Spectroscopy study of air plasma induced by IR CO2 laser pulses

A spectroscopic study of ambient air plasma, initially at room temperature and pressures ranging from 32 to 101 kPa, produced by high-power transverse excitation atmospheric (TEA) CO₂ laser (λ=9.621 and 10.591 μm; τ _FWHM≈64 ns; power densities ranging from 0.29 to 6.31 GW cm⁻²) has been carried out in an attempt to clarify the processes involved in laser-induced breakdown (LIB) air plasma. The strong emission observed in the plasma region is mainly due to electronic relaxation of excited N, O and ionic fragments N⁺. The medium-weak emission is due to excited species O⁺, N²⁺, O²⁺, C, C⁺, C²⁺, H, Ar and molecular band systems of N ₂⁺(_{2}^{+}( B ²\varSigma _u⁺^{2}\varSigma _{\mathrm{u}}^{+} –X ²\varSigma _g⁺)^{2}\varSigma _{\mathrm{g}}^{+}) , N₂(C³ Π _u–B³ Π _g), N ₂⁺(_{2}^{+}( D² Π _g–A² Π _u) and OH(A² Σ ⁺–X² Π). Excitation temperatures of 23400±700 K and 26600±1400 K were estimated by means of N⁺ and O⁺ ionic lines, respectively. Electron number densities of the order of (0.5–2.4)×10¹⁷ cm⁻³ and (0.6–7.5)×10¹⁷ cm⁻³ were deduced from the Stark broadening of several ionic N⁺ and O⁺ lines, respectively. Estimates of vibrational and rotational temperatures of N ₂⁺_{2}^{+} electronically excited species are reported. The characteristics of the spectral emission intensities from different species have been investigated as functions of the air pressure and laser irradiance. Optical breakdown threshold intensities in air at 10.591 μm have been measured.     

Noncommutative electromagnetism as a large <Emphasis Type="Italic">N</Emphasis> gauge theory

We map noncommutative (NC) U(1) gauge theory on ℝ _C ^d ×ℝ _NC ²ⁿ to U(N→∞) Yang–Mills theory on ℝ _C ^d , where ℝ _C ^d is a d-dimensional commutative spacetime while ℝ _NC ²ⁿ is a 2n-dimensional NC space. The resulting U(N) Yang–Mills theory on ℝ _C ^d is equivalent to that obtained by the dimensional reduction of (d+2n)-dimensional U(N) Yang–Mills theory onto ℝ _C ^d . We show that the gauge-Higgs system (A _μ ,Φ ^a ) in the U(N→∞) Yang–Mills theory on ℝ _C ^d leads to an emergent geometry in the (d+2n)-dimensional spacetime whose metric was determined by Ward a long time ago. In particular, the 10-dimensional gravity for d=4 and n=3 corresponds to the emergent geometry arising from the 4-dimensional N=4{\mathcal{N}}=4 vector multiplet in the AdS/CFT duality. We further elucidate the emergent gravity by showing that the gauge-Higgs system (A _μ ,Φ ^a ) in half-BPS configurations describes self-dual Einstein gravity.     

Formation of the buffer layer of silicon suboxides SiOx in the Si/SiO2 low-dimensional heterosystem after Si+ ion implantation: Si L2, 3 X-ray emission spectra

Nanosized heterostructures n-Si/SiO₂ with different thicknesses of the oxide film (20, 500 nm) after implantation by Si⁺ ions with energies of 12 and 150 keV have been investigated using Si L _{2, 3} X-ray emission spectroscopy (the Si 3d3s → Si 2p _{1/2, 3/2} electronic transition). The ion-beam modification of the interface has been revealed and studied for the heterostructure with a silicon dioxide thickness of 20 nm. An analysis of the Si L _{2, 3} X-ray emission spectra has demonstrated that the Si⁺ ion implantation leads to the self-ordering of the structure of the initially amorphous SiO₂ film 20 nm thick due to the effect of high doses. A mechanism of ion-beam modification of the insulator-semiconductor interface has been proposed. No substantial transformation of the atomic and electronic structures of the heterostructure with a silicon dioxide thickness of 500 nm has been revealed after the ion implantation.     

Efficient and widely step-tunable terahertz generation with a dual-wavelength CO<Subscript>2</Subscript> laser

Coherent terahertz radiation in a widely step-tunable range of 72.3–2706 μm (0.11–4.15 THz) has been generated in GaAs crystal by difference-frequency generation using one CO₂ laser with dual-wavelength output. The peak power of THz pulse reaches 35 W at the wavelength of 236.3 μm, which corresponds to a pulse energy of 2.1 μJ. An average power of 10 μW has been achieved when working repetitively. This efficient terahertz radiation source is more compact and widely tunable than other THz sources pumped by CO₂ laser.     

Fabrication of atomically smooth SrRuO3 thin films by laser molecular beam epitaxy

High-quality SrRuO₃ (SRO) thin films and SrTiO₃/SRO bilayer were grown epitaxially on SrTiO₃ (STO)(001) substrates by laser molecular beam epitaxy. The results of in situ observation of reflection high-energy electron diffraction and ex situ X-ray diffraction ϑ-2ϑ scan indicate that the SRO thin films have good crystallinity. The measurements of atomic force microscopy and scan tunneling microscopy reveal that the surface of the SRO thin film is atomically smooth. The resistivity of the SRO thin film is 300 μΘ·cm at room temperature. Furthermore, the transmission electron microscopy study shows that the interfaces of STO/SRO and SRO/STO are very clear and no interfacial reaction layer was observed. The experimental results show that the SRO thin film is an excellent electrode material for devices based on perovskite oxide materials. Supported by the National Natural Science Foundation of China (Grant No. 10334070)     

Thermodynamical universality of the Lovelock black holes

The necessary and sufficient condition for the thermodynamical universality of the static spherically symmetric Lovelock black hole is that it is the Nth order pure Lovelock Λ-vacuum solution. By universality we mean the thermodynamical parameters: temperature and entropy always bear the same relation to the horizon radius for d = 2N + 1, 2N + 2 dimensions for all N which is the degree of the Lovelock polynomial. For instance, the entropy always goes in terms of the horizon radius as r _h and r _h ², respectively for the odd and even dimensions. Not only that the universality uniquely identifies the pure Lovelock black hole with Λ, it is the characterizing property of this class of black holes.     

A tunable green alkaline-earth silicon-oxynitride solid solution (Ca1? x Sr x )Si2O2N2:Eu2+ and its application in LED

A series of (Ca_1−x−y Sr _x )Si₂O₂N₂:yEu²⁺ (x=0.0–0.97, y=0.03) phosphors were synthesized by high-temperature solid-state reaction. The XRD patterns confirm the formation of a solid solution of (Ca_1−x−y Sr _x )Si₂O₂N₂:yEu²⁺. An intense tunable green light is observed with the increasing ratio of Sr/Ca. With an increase in x, the excitation and emission spectra show a redshift and blueshift, respectively, due to large centroid shift and small Stokes shift. The temperature dependent luminescence is also investigated in the temperature range of 77–450 K. The Huang–Rhys factor and the thermal-quenching temperature are determined. Intense green LEDs were successfully fabricated based on the (Ca_1−x−y Sr _x )Si₂O₂N₂:yEu²⁺ phosphor and near-ultraviolet (∼395 nm) GaN/blue (460 nm) InGaN chips. All the results indicate that the solid solution (Ca_1−x−y Sr _x )Si₂O₂N₂:yEu²⁺ is a promising phosphor applicable to near-UV and blue LEDs for solid-state lighting.     

Growth of partially strain-relaxed Si1-yCy epilayers on (100)Si

1-y C_y epilayers were grown by MBE on (100) Si single-crystal substrates either directly on a dislocation-free or on a highly dislocated Si buffer layer. The orientation of the epilayers and their strain status were measured by double-crystal X-ray diffraction. Cross sections were prepared for TEM investigations. Epitaxial layers of about 130 nm thickness and carbon contents up to [%at.]1.38 grown on top of dislocation-free 1-μm-thick Si buffer layers were fully strained. In TEM bright field images, no dislocations were found. In order to introduce a high dislocation density in the Si buffer layer, the native oxide on the substrate was only partially removed prior to growing the Si buffer. A Si_1-yC_y film grown on top of that highly dislocated buffer layer showed a partial stress relaxation (a_∥=5.429 Å<a_si=5.431 Å). The large FWHM of transverse rocking scans through the Bragg reflection corresponding to the epilayer indicates a high defect density. TEM cross-section micrographs showed an extension of threading dislocations from the Si buffer layer into the Si_1-yC_y layer. Received: 22 April 1998/Accepted: 22 April 1998     

Impurity distribution and electrical characteristics of boron-doped Si1−x Ge x /Si p +/N heterojunction diodes produced using pulsed UV-laser-induced epitaxy and Gas-immersion laser doping

A two-step pulsed UV-laser process which independently controls the metallurgical and electrical junction depth of a Si_1–x Ge _x /Si heterojunction diode has been implemented. Pulsed Laser-Induced Epitaxy (PLIE) combined with Gas-immersion Laser Doping (GILD) are used to fabricate boron-doped heteroepitaxial p ⁺/N Si_1–x Ge _x /Si layers and diodes. Borontrifluoride is used as the gaseous dopant source in the GILD process step. Boron incorporation and activation are investigated as a function of laser energy fluence and the number of laser pulses using SIMS and Halleffect measurements. The dose of incorporated dopant is on the order of 10¹³ cm^–2 per pulse. The B profiles obtained are flat except for a peak at the interface resulting from segregation effects. The B and Ge distributions are compared with shifts in the turn-on voltage of p ⁺/N Si_1–x /Si heterojunction diodes produced by the process. The GILD/PLIE process is spatially selective with the resulting diodes fabricated being quasiplanar. Hole mobilities in the heavily doped Si_1–x Ge _x films are found to be slightly lower than in comparable Si films.Presently at the Oregon Graduate Institute, Beaverton, OR 97006, USA     

Temperature behaviour of optical properties of Si+-implanted SiO2

Silicon nanocrystals were prepared by Si⁺-ion implantation and subsequent annealing of SiO₂ films thermally grown on a c-Si wafer. Different implantation energies (20-150 keV) and doses - cm ^-2 ) were used in order to achieve flat implantation profiles (through the thickness of about 100 nm) with a peak concentration of Si atoms of 5, 7, 10 and 15 atomic%. The presence of Si nanocrystals was verified by transmission electron microscopy. The samples exhibit strong visible/IR photoluminescence (PL) with decay time of the order of tens of μs at room temperature. The changes of PL in the range 70-300 K can be well explained by the exciton singlet-triplet splitting model. We show that all PL characteristics (efficiency, dynamics, temperature dependence, excitation spectra) of our Si⁺-implanted SiO₂ films bear close resemblance to those of a light-emitting porous Si and therefore we suppose similar PL origin in both materials. Received 1st September 1998 and Received in final form 7 September 1999     

Studying the ω<Emphasis Type="Italic">N</Emphasis> elastic and inelastic cross section with nucleons

We explore the possibility to measure the elastic and inelastic ωN cross section in p+d→d+ω+p _sp and p+A reactions. Our studies indicate that the elastic scattering cross sections can be determined for ω momenta above 1 GeV/c in p+d reactions by gating on high proton spectator momenta whereas the ωN absorption cross section down to low relative ω momenta is most effectively studied in p+A reactions at beam energies 2.0–2.7 GeV. Received: 15 October 1999     

Thermoluminescence experiments to study lattice defects in aluminosilicates

Summary The thermoluminescent emissions of β-eucryptite and β-spodumene have been recordedvs. temperature and wavelength. Arguments are advanced which allow the observed emission to be ascribed to point defects originated by the exchange of Si⁺⁴ and Al⁺³ ions in (Si, Al)O₄ tetrahedra.     

Photoluminescence of Si from Si nanocrystal-doped SiO2/Si multilayered sample

A multilayered Si nanocrystal-doped SiO₂/Si (or Si-nc:SiO₂/Si) sample structure is studied to acquire strong photoluminescence (PL) emission of Si via modulating excess Si concentration. The Si-nc:SiO₂ results from SiO thin film after thermal annealing. The total thickness of SiO layer remains 150 nm, and is partitioned equally into a number of sublayers (N = 3, 5, 10, or 30) by Si interlayers. For each N-layered sample, a maximal PL intensity of Si can be obtained via optimizing the thickness of Si interlayer (or d_Si). This maximal PL intensity varies with N, but the ratio of Si to O is nearly a constant. The brightest sample is found to be that of N = 10 and d_Si = 1 nm, whose PL intensity is ∼5 times that of N = 1 without additional Si doping, and ∼2.5 times that of Si-nc:SiO₂ prepared by co-evaporating of SiO and Si at the same optimized ratio of Si to O. Discussions are made based on PL, TEM, EDX and reflectance measurements.     

Interaction of Muons with H2/H3-Centres in Diamond

We report on transverse field muon spin rotation measurements on a nitrogen-rich type Ia diamond, both before and after the conversion of some of the aggregated nitrogen centres to nitrogen-vacancy complexes known as H2/H3-centres. The prompt fractions f and the spin relaxation rates λ were determined for the diamagnetic (μ_d) and the paramagnetic (Mu_T) states in the temperature range 10–300 K. The production of the nitrogen-vacancy complexes had little effect on the parameters of the Mu_T state for which f and λ remained unchanged at approximately 30% and 4 μs⁻¹, respectively. For the μ_d state, on the other hand, the formation of the H2/H3-centres resulted in an increase of the prompt fraction from 10(2)% to 20(3)%, and (for the first time) the spin relaxation rate showed a non-zero value of 0.020(3) μs⁻¹. These results show evidence of strong μ_d interactions with the nitrogen-vacancy complexes in diamond, and suggest a more complex structure for this state than a bare μ⁺. This revised version was published online in September 2006 with corrections to the Cover Date.     

Polarization and piezoelectricity in polymer films with artificial void structure

Laminated polymer-film systems with well-defined void structures were prepared from fluoroethylenepropylene (FEP) and polytetrafluoroethylene (PTFE) layers. First the PTFE films were patterned and then fusion-bonded with the FEP films. The laminates were subjected to either corona or contact charging in order to obtain the desired piezoelectricity. The build-up of the “macro-dipoles” in the laminated films was studied by recording the electric hysteresis loops. The resulting electro-mechanical properties were investigated by means of dielectric resonance spectroscopy (DRS) and direct measurements of the stress-strain relationship. Moreover, the thermal stability of the piezoelectric d ₃₃ coefficient was investigated at elevated temperatures and via thermally stimulated discharge (TSD) current measurements in short circuit. For 150 μm thick laminated films, consisting of one 25 μm thick PTFE layer, two 12.5 μm thick FEP layers, and a void of 100 μm height, the critical voltage necessary for the build-up of the “macro-dipoles” in the inner voids was approximately 1400 V, which agrees with the value calculated from the Paschen Law. A quasi-static piezoelectric d ₃₃ coefficient up to 300 pC/N was observed after corona charging. The mechanical properties of the film systems are highly anisotropic. At room temperature, the Young’s moduli of the laminated film system are around 0.37 MPa in the thickness direction and 274 MPa in the lateral direction, respectively. Using these values, the theoretical shape anisotropy ratio of the void was calculated, which agrees well with experimental observation. Compared with films that do not exhibit structural regularity, the laminates showed improved thermal stability of the d ₃₃ coefficients. The thermal stability of d ₃₃ can be further improved by pre-aging. E.g., the reduction of the d ₃₃ value in the sample pre-aged at 150°C for 5 h was less than 5% after annealing for 30 h at a temperature of 90°C.     

Solid-state NMR investigations of Si-29 and N-15 enriched silicon nitride

We compare ²⁹Si magic-angle spinning (MAS) nuclear magnetic resonance (NMR) spectra from the two modifications of silicon nitride, α-Si₃N₄ and β-Si₃N₄, with that of a fully (²⁹Si, ¹⁵N)-enriched sample ²⁹Si₃¹⁵N₄, as well as ¹⁵N NMR spectra of Si₃¹⁵N₄ (having ²⁹Si at natural abundance) and ²⁹Si₃¹⁵N₄. We show that the ¹⁵N NMR peak-widths from the latter are dominated by J(²⁹Si–¹⁵N) through-bond interactions, leading to significantly broader NMR signals compared to those of Si₃¹⁵N₄. By fitting calculated ²⁹Si NMR spectra to experimental ones, we obtained an estimated coupling constant J(²⁹Si–¹⁵N) of 20 Hz. We provide ²⁹Si spin-lattice (T₁) relaxation data for the ²⁹Si₃¹⁵N₄ sample and chemical shift anisotropy results for the ²⁹Si site of β-Si₃N₄. Various factors potentially contributing to the ²⁹Si and ¹⁵N NMR peak-widths of the various silicon nitride specimens are discussed. We also provide powder X-ray diffraction (XRD) and mass spectrometry data of the samples.     

Electronic structure of silicon nitride according to ab initio quantum-chemical calculations and experimental data

Charge transfer ΔQ = 0.35e at the Si-N bond in silicon nitride is determined experimentally using photoelectron spectroscopy, and the ionic formula of silicon nitride Si₃^+1.4N₄^−1.05 is derived. The electronic structure of α-Si₃N₄ is studied ab initio using the density functional method. The results of calculations (partial density of states) are compared with experimental data on X-ray emission spectroscopy of amorphous Si₃N₄. The electronic structure of the valence band of amorphous Si₃N₄ is studied using synchrotron radiation at different excitation energies. The electron and hole effective masses m _e ^* ≈ m _h ^* ≈ 0.5m _e are estimated theoretically. The calculated values correspond to experimental results on injection of electrons and holes into silicon nitride.