正弦平方势与带电粒子的准沟道辐射

在经典力学框架内,描述了带电粒子自发辐射的频谱分布与辐射频率;利用正弦平方势讨论了带电粒子准沟道辐射,指出了准沟道辐射与系统的旋转周期解相联系;分析了系统的相平面特征和准沟道粒子进入混沌的可能途径. In the general case the spectral distribution and the radiation frequency are derived for the spontaneous radiation of charged particles. The quasichanneling radiation is described by using a sine square potential, and point out that the quasichanneling radiation is related directly to the rotation periodic solution; The properties of the phase plane and the possible model approaching to chaos for the system is analyzed.     

正弦平方势与正电子面沟道辐射的一般特征

引入正弦平方势，在经典力学框架内，将面沟道粒子的运动方程化为标准的摆方程，并用Jacobian椭圆函数和椭圆积分解析地给出系统的解和粒子运动周期，导出了正电子面沟道辐射的瞬时辐射强度、平均辐射强度和辐射谱特征.结果表明，沟道辐射频率己进入γ-能区，并指出了利用它作为短波长激光的可能性. 关键词： 沟道辐射 非线性 正弦平方势     

正弦平方势与沟道辐射谱线的自然展宽

指出了非线性效应、多普勒效应、晶格热振动、电子多重散射和偶极效应等对沟道辐射谱线宽度的影响;强调了辐射反作用对谱线宽度的影响是不可避免的。比较了不同的粒子-晶体相互作用势,并从正弦平方势出发,在小振幅近似下讨论了沟道粒子的运动行为;用摄动法求解了系统的特征方程,计算了沟道辐射谱线的自然展宽和频率漂移。最后,以正电子的Si(110)面沟道辐射为例,计算了它的辐射频率。结果表明,对于能量为E=56MeV的正电子,沟道辐射能量E=ω=36.0keV。     

正弦平方势与沟道辐射的谱线展宽

利用曾经提出的正弦平方势解析地处理了非线性效应和偶极效应对沟道谱线宽度的影响, 解释了正电子能量在5 GeV附近的Si (110)面沟道辐射谱特征. The spectral properties of the planar channeling radiation of positron have been investigated by using Sine squared Potential. At positron energy of 5 GeV a sharp line has been explained for the planar channeling radiation in Si(110 ). It is that theoretic results are compatible to the experiments.     

利用透射系数研究周期势的能带结构

利用一维方位势透射系数的递推公式研究了周期势的能带结构,文中考察了能 结构与垒宽、阱宽及位势个数的关系。     

正弦平方势与小振幅近似下的弯晶沟道辐射

在理想情况下和经典力学框架内,引入正弦平方势,把粒子在弯晶中的运动方程化为具有外力矩的摆方程。并对系统的相平面特征进行了数值分析。在小振幅近似下,把粒子运动方程化为具有硬特性的弹簧-振子系统,用Jacobian椭圆函数和椭圆积分解析地给出系统的解和粒子运动周期。讨论了弯晶沟道辐射频率、无量纲偏转角和辐射谱的一般特征。指出利用沟道辐射作为激光的可能性。以正电子在碳单晶中沟道辐射为例进行了具体计算,得到了与其他工作基本一致的结果。     

正弦平方势与掺杂超晶格双稳态系统的全局分叉

掺杂超晶格是对同一材料交替掺入n-型和p-型杂质,形成n-i-p-i-n-i-p-i…一维阵列的周期结构。由于交替掺杂,衬底材料的导带受到周期调制形成一个个十分类似于正弦平方形式的量子阱。引入正弦平方势,在经典力学框架内,把粒子的运动方程化为具有阻尼项和受迫项的广义摆方程。用Jacobian椭圆函数和第一类全椭圆积分找到了无扰动系统的解和粒子振动周期,利用Melnikov方法分析了系统的全局分叉与Smale马蹄变换意义上的混沌行为,给出了系统通过级联分叉进入混沌的临界值。结果表明,对于异宿轨道,当参数满足条件 ＜πsech 时,系统出现了Smale马蹄变换意义上的混沌振荡。对于振荡型周期轨道,当参数满足条件 ＜πsech 时,产生了奇阶振荡型次谐分叉。注意到系统进入混沌的临界条件与它的参数有关,只需适当调节这些参数就可以避免或控制混沌,为光学双稳态器件的设计提供了理论分析。     

介电常数呈正弦平方规律变化的一维光子晶体带结构

一维光子晶体是最简单的一类光子晶体。利用分子束外延生长技术,人们可以把两种折射率(或介电常数)不同的材料交替生长形成多层薄膜结构。由于对称性,人们就把这种多层薄膜材料近似当作一维光子晶体,并研究不同折射率情况下光子晶体的能带特征。假设介电常数呈正弦平方规律变化,光子的运动方程化为熟知的Mathieu方程。根据Bloch定理讨论了系统的能量分布,系统自动呈现出的能带结构,再现了光子晶体的周期性与能带特征。数值分析表明,在参数(δ,ε)平面上系统出现了一系列稳定和不稳定区(禁带)。当参数ε→0时,这些不稳定区退化为一点,给出了禁带中心频率,并用摄动法求解了方程的低阶不稳定区及其禁带宽度。结果表明,一阶和二阶不稳定区(禁带)宽度Δω1,2与介质的参数和入射光子频率有关。适当选择这些参数,可以有效地调节光子晶体的带结构,并按需要得到不同性能的光子晶体。     

掺杂超晶格量子阱的沟道效应与沟道辐射

分析了超晶格量子阱的沟道效应和沟道辐射,利用正弦平方势描述了掺杂超晶格量子阱沟道粒子的运动行为,并在经典力学框架内,把粒子的运动方程化为摆方程。用Jacobian椭圆函数和椭圆积分解析地给出了系统的解和粒子运动周期,导出了量子阱沟道辐射的辐射强度和辐射能量。结果表明,对于能量为100 MeV左右的电子,辐射能量可达keV量级（X能区）。指出了用量子阱沟道辐射作为X激光或γ激光的可能性。     

掺杂超晶格量子阱的沟道效应与沟道辐射

 分析了超晶格量子阱的沟道效应和沟道辐射,利用正弦平方势描述了掺杂超晶格量子阱沟道粒子的运动行为,并在经典力学框架内,把粒子的运动方程化为摆方程。用Jacobian椭圆函数和椭圆积分解析地给出了系统的解和粒子运动周期,导出了量子阱沟道辐射的辐射强度和辐射能量。结果表明,对于能量为100 MeV左右的电子,辐射能量可达keV量级（X能区）。指出了用量子阱沟道辐射作为X激光或γ激光的可能性。     

并五苯同质异相体中分子间势能与能带计算

采用Born-Mayer-Haggins对势模型，分析了并五苯分子间势能及其相互作用. 用紧束缚模型计算了两种并五苯同质异相体结构的能带宽度. 计算带宽随温度升高减小8%—14%. 关键词： 并五苯 同质异相体 分子间势能 能带计算     

The complex band structure for armchair graphene nanoribbons

Using a tight binding transfer matrix method,we calculate the complex band structure of armchair graphene nanoribbons.The real part of the complex band structure calculated by the transfer matrix method fits well with the bulk band structure calculated by a Hermitian matrix.The complex band structure gives extra information on carrier’s decay behaviour.The imaginary loop connects the conduction and valence band,and can profoundly affect the characteristics of nanoscale electronic device made with graphene nanoribbons.In this work,the complex band structure calculation includes not only the first nearest neighbour interaction,but also the effects of edge bond relaxation and the third nearest neighbour interaction.The band gap is classified into three classes.Due to the edge bond relaxation and the third nearest neighbour interaction term,it opens a band gap for N=3M 1.The band gap is almost unchanged for N=3M + 1,but decreased for N=3M.The maximum imaginary wave vector length provides additional information about the electrical characteristics of graphene nanoribbons,and is also classified into three classes.     

Diffraction effects in guided photonic band gap structure

The concept of the photonic band gap (PBG) structures stems from ideas of Yablonovitch. The idea is to design components so that they affect the properties of photons, in much the same way that ordinary semiconductor crystals affect the properties of electrons. In fact, the PBG structures forbid propagation of photons for a particular range of energy. They can be used to realise optical filters with large stop band and sharp transmission resonance. In the guided PBG structures, the existence of diffractive effects in the vertical dimension could limit the quality factor of such filters. In this paper, we have investigated the origin of diffraction losses in one-dimensional guided PGB structures using 2D and 3D numerical tools. We propose an analytical approach based on Bragg diffraction relation to explain these losses phenomenon. From this approach, the influence of some design parameters on the electromagnetic behaviour and the spectral response of PBG resonators will be explained.     

The bulk band structure and inner potential of layered In4Se3

The layered In₄Se₃ system does have a bulk band structure (i.e. discernable and significant band dispersion) perpendicular to the cleavage plane. Band widths (the extent of dispersion) of 300 meV or more are observed, for In-p and Se-p weighted bands within the valence region, and is indicative of a bulk band structure. Two-dimensionality of state is clearly not conserved, and there must exist interactions between layers sufficient to support a bulk band structure.     

Search target band gap with inverse band structure approach for complex superlattices

Because it is too difficult to pick out the needed structures from the vast possible configurations, complex superlattices have not been studied well for a long time. In this paper, an inverse band structure (IBS) approach which combined genetic algorithm search method with an empirical spds* tight-binding energy band calculation to address this problem is presented. Needed direct energy band gaps of Ga(Al)As complex superlattices are found by using this approach. It can be found that the band gap value can be same for different superlattice structures, but other properties of these complex superlattices could be different.     

The effects of indium segregation on the valence band structure and optical gain of GaInAs/GaAs quantum wells

The effects of indium segregation on the valence band structures and the optical gain in GaInAs/GaAs quantum wells are theoretically investigated using 4×4 Luttinger–Kohn Hamiltonian matrix. The method for the band structure calculation is based on the finite difference method, then the optical gain is calculated using the density matrix approach. For segregation coefficient R less than 0.7, indium segregation has little influence on optical gain, but for segregation coefficient R more than 0.7, it has a significant influence on optical gain, the gain spectra can be blue-shifted with the increase of segregation coefficient R, and the peak gains are decreased as segregation coefficient R increases, which is mainly due to the reduction of the carrier population inversion.