Effective lagrangian for spontaneously broken N = 2 superconformal symmetry

In a general framework of non-linear realizations for space-time symmetries, we investigate the effective lagrangian for N = 2 superconformal symmetry which is spontaneously broken down to N = 2 super-Poincaré symmetry. For the case in which the dilation multiplet is a massless N = 2 gauge multiplet, we derive a low-energy effective lagrangian which describes the interaction of Nambu-Goldstone particles.     

Effective lagrangian for supersymmetric theories with intermediate breaking scale

We investigate effective lagrangians in supersymmetric models broken spontaneously at an intermediate energy (～ μ ? M_GUT). It is shown to all orders in perturbation theory that the low-energy interactions of light particles are described by an effective lagrangian with explicit but soft supersymmetry breaking of order μ² / M_GUT.     

ΛN and ΣN Interactions from Lattice QCD

We present our recent study on ΛN and ΣN (isospin I = 3/2) interactions by measuring Nambu–Bethe–Salpeter wave functions on the Lattice QCD. The lattice QCD calculation is performed by using the N _f  = 2 + 1 gauge configurations generated by PACS-CS collaboration together with employing an improved method to obtain potentials in lattice QCD simulations. For the ¹ S ₀ channel, the central ΣN (I = 3/2) potential and the central ΛN (¹ S ₀) potential are found to be very similar. For the spin triplet (³ S ₁?³ D ₁) channels, the central ΛN(³ S ₁?³ D ₁) potential is attractive while the central ΣN(I = 3/2, ³ S ₁?³ D ₁) potentials is repulsive. Tensor potentials, on the other hand, are rather weak in both ΛN and ΣN(I = 3/2) systems.     

Preparation and characterization of carbons for the retention of halogens in the condenser vacuum system of a thermonuclear plant

Activated carbons were prepared by air and carbon dioxide activation, from almond tree pruning, with the aim of obtaining carbons that reproduce the textural and mechanical properties of the carbons currently used in the filtering system of the condenser vacuum installation of a Thermonuclear Plant (CNA; Central Nuclear de Almaraz in Caceres, Spain), produced from coconut shell. The variables studied in non-catalytic gasification series with air were the temperature (215-270 °C) and the time (1-16 h) and the influence of the addition of one catalyst (Co) and the time (1-2 h) in catalytic gasification. In the case of activation with CO₂, the influence of the temperature (700-950 °C) and the time (1-8 h) was studied. The resulting carbons were characterized in terms of their BET surface, porosity, and pore size distribution. The N₂ adsorption isotherms at 77 K for both series showed a type I behaviour, typical of microporous materials. The isotherms showed that with both gasificant agents the temperature rise produced an increase in the carbon porosity. With regards to the activation time, a positive effect on the N₂ adsorbed volume on the carbons was observed. The best carbons of each series, as well as the CNA (carbon currently used in the CNA), were characterized by mercury porosimetry and iodine solution adsorption isotherms. The results obtained allowed to state that several of the carbons produced had characteristics similar to the carbon that is target of reproduction (which has S_BET of 741 m² g⁻¹, V_mi of 0.39 cm³ g⁻¹ and a iodine retention capacity of 429.3 mg g⁻¹): carbon C (gasification with CO₂ at 850 °C during 1 h), with S_BET of 523 m² g⁻¹, V_mi of 0.33 cm³ g⁻¹ and a iodine retention capacity of 402.5 mg g⁻¹, and carbon D (gasification with CO₂ at 900 °C during 1 h), whose S_BET is 672 m² g⁻¹, V_mi is 0.28 cm³ g⁻¹ and has a iodine retention capacity of 345.2 mg g⁻¹.     

Effective chiral meson lagrangian with Weinberg and KSFR relations from microscopic four-quark interactions

An effective chiral meson lagrangian is derived from a microscopic quark lagrangian. It contains a partial Higgs mechanism for ϱ-A₁ mass splitting reproducing Weinberg and KSFR relations, and includes quartic derivative “Skyrme” terms and the gauges Wess-Zumino term. The connection to previous approaches deriving the effective lagrangian exclusively from the chiral anomaly including “normal-parity” terms is established.     

Measurement of the quadratic Zeeman shift of Rb hyperfine sublevels using stimulated Raman transitions

We demonstrate a technique for directly measuring the quadratic Zeeman shift using stimulated Raman transitions. The quadratic Zeeman shift has been measured yielding Δν=1296.8±3.3 Hz/G² for magnetically insensitive sublevels (5S_1/2,F=2,m_F=0→5S_1/2,F=3,m_F=0) of ⁸⁵Rb by compensating the magnetic field and cancelling the ac Stark shift. We also measured the cancellation ratio of the differential ac Stark shift due to the imbalanced Raman beams by using two pairs of Raman beams (σ⁺, σ⁺) and it is 1:3.67 when the one-photon detuning is 1.5 GHz in the experiment.     

Infrared and Zeeman effect measurements of ferromagnetically coupled Nd ions in weakly doped LiYF4 crystals

Crystal-field infrared active excitations and photoluminescence of Nd³⁺ ions in weakly doped LiYF₄ have confirmed that the concentration dependent satellite lines accompanying the Nd³⁺ crystal-field optical transitions are due to four ferromagnetically coupled pairs of Nd³⁺ ions in undistorted Y³⁺ sites with the exchange energies J₁=0.9, J₂=1.6, J₃=3.1 and J₄=4.5 cm⁻¹, respectively. A linear Zeeman splitting of the Nd³⁺ ion ⁴F_3/2→⁴I_9/2 transition is observed and the g-factors (g_∥=0.2±0.1; g_⊥=0.97±0.01) associated with the ⁴F_3/2 lowest level are determined.     

High surface area thermally stabilized porous iron oxide/silica nanocomposites via a formamide modified sol-gel process

Iron oxide/silica (Fe:Si as 1:10 atomic ratio) composite materials have been prepared by calcination for 3 h at different temperatures (400-900 °C) of xerogel precursor obtained via a formamide modified sol-gel process. The process involved TEOS and iron(III) nitrate, nitric acid and formamide. Genesis of the composite materials from the xerogel precursor has been investigated by TGA, DSC, FTIR, XRD, SEM and EDX. Results indicated that all the calcined composites are mainly composed of amorphous iron oxide dispersed as finely divided particles in amorphous silica matrixes. Nitrogen adsorption/desorption isotherms revealed a reversible type I of isotherms indicative of microporosity. However, high S_BET surface area and microsporosity were observed for the calcined composite materials (e.g. S_BET = 625 m² g⁻¹, and S_αs = 556 m² g⁻¹ for the composite calcined at 400 °C). Formation of the porous texture was discussed in terms of the action of formamide, which enhanced strengthening of the silica gel network during evaporation of the more volatile components within the composite body during the drying process.     

The effect of interface states, excess capacitance and series resistance in the Al/SiO2/p-Si Schottky diodes

The current-voltage (I-V) characteristics of Al/SiO₂/p-Si metal-insulator-semiconductor (MIS) Schottky diodes were measured at room temperature. In addition the capacitance-voltage (C-V) and conductance-voltage (G-V) measurements are studied at frequency range of 10 kHz-1 MHz. The higher value of ideality factor of 3.25 was attributed to the presence of an interfacial insulator layer between metal and semiconductor and the high density of interface states localized at Si/SiO₂ interface. The density of interface states (N_ss) distribution profile as a function of (E_ss − E_v) was extracted from the forward bias I-V measurements by taking into account the bias dependence of the effective barrier height (Φ_e) at room temperature for the Schottky diode on the order of ≅4 × 10¹³ eV⁻¹ cm⁻²_. These high values of N_ss were responsible for the non-ideal behaviour of I-V and C-V characteristics. Frequency dispersion in C-V and G-V can be interpreted only in terms of interface states. The N_ss can follow the ac signal especially at low frequencies and yield an excess capacitance. Experimental results show that the I-V, C-V and G-V characteristics of SD are affected not only in N_ss but also in series resistance (R_s), and the location of N_ss and R_s has a significant on electrical characteristics of Schottky diodes.     

Einstein's gravity from a first order lagrangian in an embedding space

We formulate a first order action principle in a higher dimensional space M_N in which we embed spacetime. The action I is essentially an “area” of a four-dimensional spacetime V₄ weighted with a matter density ω in M_N. For a suitably chosen ω we obtain on V₄ a set of worldlines. It is shown that these worldlines are geodesics of V₄, provided that V₄ is a solution to our variational procedure. Then it follows that our spacetime satisfies the Einstein equations for dust - apart from an additional term with zero covariant divergence. (This extra term was shown in a previous paper to be exactly zero at least in the case of the cosmological dust model.) Thus we establish a remarkable connection of the extrinsic spacetime theory with the intrinsic general relativity. This step appears to be important for quantum gravity.     

Effective meson lagrangian with chiral and heavy quark symmetries from quark flavor dynamics

By bosonization of an extended NJL model we derive an effective meson theory which describes the interplay between chiral symmetry and heavy quark dynamics. This effective theory is worked out in the low-energy regime using the gradient expansion. The resulting effective lagrangian describes strong and weak interactions of heavy B and D mesons with pseudoscalar Goldstone bosons and light vector and axial-vector mesons. Heavy meson weak decay constants, coupling constants and the Isgur-Wise function are predicted in terms of the model parameters partially fixed from the light quark sector. Explicit SU(3)_F symmetry breaking effects are estimated and, if possible, confronted with experiment.     

Orientation of199mHg by optical pumping detected by γ-radiation anisotropy

^199mHg was produced and mass separated at the ISOLDE facility (CERN). Nuclear orientation achieved by optical pumping via the resonance line 6s ^{2 1} S ₀→6s6p ³ P ₁,λ=2537Å was monitored by means of the anisotropy of theγ-radiation emitted in the cascade^199mHg(I=13/2⁺) $${}^{199m}Hg(I = 13/2^ + )\xrightarrow[{M4}]{}{}^{199*}Hg(I = 5/2^ - )\xrightarrow[{E2}]{}{}^{199}Hg(I = 1/2^ - ).$$ ^199*Hg(I=5/2^?)¹⁹⁹Hg(I=1/2^?). Maximum anisotropies of 35% (2,8%) were found in the M4 (E2) transition. A Zeeman scanning of the³ P ₁ state yielded the positions ofF=13/2 and theF=15/2 hfs components relative to the reference isotope²⁰⁴Hg at 15.13 (15) GHz and ?2.86 (15) GHz respectively. Isotopic shift and the quadrupole interaction constant were deduced from these values using the knownA factor.δv ^199m/2O4=v ^2O4?v ^199m=12.20 (16) GHzB=?0.86 (25) GHz. From theB factor the spectroscopic quadrupolment was calculated asQ _s =1.54 (44) barn.     

Current conduction mechanism in Al/p-Si Schottky barrier diodes with native insulator layer at low temperatures

The forward bias current-voltage (I-V) characteristics of Al/p-Si (MS) Schottky diodes with native insulator layer were measured in the temperature range of 80-300 K. The obtained zero bias barrier height Φ_B0(I-V), ideality factor (n) and series resistance (R_s) determined by using thermionic emission (TE) mechanism show strong temperature dependence. There is a linear correlation between the Φ_B0(I-V) and n because of the inhomogeneties in the barrier heights (BHs). Calculated values from temperature dependent I-V data reveal an unusual behaviour such that the Φ_B0 decreases, as the n and R_s values are increasing with decreasing absolute temperature, and these changes are more pronounced especially at low temperatures. Such temperature dependence of BH is contradictory with the reported negative temperature coefficient of the barrier height. In order to explain this behaviour we have reported a modification in the expression reverse saturation current I_o including the n and the tunnelling factor (αΧ^1/2δ) estimated to be 15.5. Therefore, corrected effective barrier height Φ_bef.(I-V) versus temperature has a negative temperature coefficients (α = −2.66 × 10⁻⁴ eV/K) and it is in good agreement with negative temperature coefficients (α = −4.73 × 10⁻⁴ eV/K) of Si band gap. In addition, the temperature dependent energy distribution of interface states density N_ss profiles was obtained from the forward bias I-V measurements by taking into account the bias dependence of the Φ_e and n. The forward bias I-V characteristics confirm that the distribution of N_ss, R_s and interfacial insulator layer are important parameters that the current conduction mechanism of MS Schottky diodes.     

Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures

The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (Al/Si₃N₄/p-Si) Schottky barrier diodes (SBDs) were measured in the temperature range of 80-300 K. By using the thermionic emission (TE) theory, the zero-bias barrier height Φ_B0 calculated from I-V characteristics was found to increase with increasing temperature. Such temperature dependence is an obvious disagreement with the negative temperature coefficient of the barrier height calculated from C-V characteristics. Also, the ideality factor decreases with increasing temperature, and especially the activation energy plot is nonlinear at low temperatures. Such behaviour is attributed to Schottky barrier inhomogeneties by assuming a Gaussian distribution of barrier heights (BHs) at interface. We attempted to draw a Φ_B0 versus q/2kT plot to obtain evidence of a Gaussian distribution of the BHs, and the values of Φ_Bo = 0.826 eV and α_o = 0.091 V for the mean barrier height and standard deviation at zero-bias, respectively, have been obtained from this plot. Thus, a modified ln(I_o/T²) − q²σ_o²/2(kT)² versus q/kT plot gives Φ_B0 and Richardson constant A^* as 0.820 eV and 30.273 A/cm² K², respectively, without using the temperature coefficient of the barrier height. This value of the Richardson constant 30.273 A/cm² K² is very close to the theoretical value of 32 A/cm² K² for p-type Si. Hence, it has been concluded that the temperature dependence of the forward I-V characteristics of the Al/Si₃N₄/p-Si Schottky barrier diodes can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. In addition, the temperature dependence of energy distribution of interface state density (N_SS) profiles was determined from the forward I-V measurements by taking into account the bias dependence of the effective barrier height and ideality factor.     

Influence of Yb concentration on upconversion luminescence of Ho

Upconversion (UC) emissions at 360 ((⁵F, ³F, ⁵G)₂ → ⁵I₈), 392 (³K₇/⁵G₄ → ⁵I₈), 428 (⁵G₅ → ⁵I₈), 554 (⁵S₂/⁵F₄ → ⁵I₈), 667 (⁵F₅ → ⁵I₈) and 754 (⁵S₂/⁵F₄ → ⁵I₇) nm were obtained in 0.1 mol% Ho³⁺/x mol% Yb³⁺:Y₂O₃ (x = 2, 5, 8, 11, 15) bulk ceramics under infrared (IR) excitation at 976 nm. The intensity of the UC luminescence centered at 554 and 754 nm increased with Yb³⁺ concentration from 2 to 5 mol% and decreased from 5 to 15 mol%, while the UC luminescence centered at 392, 428 and 667 nm increased with Yb³⁺ concentration from 2 to 11 mol%, then started to reduce with Yb³⁺ concentration until 15 mol%. This comes from the competition between the energy back transfer (EBT) process [⁵S₂/⁵F₄(Ho) + ²F_7/2(Yb) → ⁵I₆(Ho) + ²F_5/2(Yb) as well as ⁵F₅(Ho) + ²F_7/2(Yb) → ⁵I₇(Ho) + ²F_5/2(Yb)] and spontaneous radiation process. The intensity of the UC luminescence centered at 360 nm always increases with Yb³⁺ concentration from 2 to 15 mol%. We believe that it may come from the cooperation of energy transfer process from Yb³⁺ ions in the ²F_5/2 state and the cross energy transfer process ⁵S₂/⁵F₄ + ⁵I₆ → (⁵F, ³F, ⁵G)₂ + ⁵I₈.     

Nuclear hyperfine structure in the XΣ state of ZrC

Electronic band systems of zirconium monocarbide, ZrC, in the 16 000-19 000 cm⁻¹ region have been observed following the reaction of laser-ablated Zr atoms with methane under supersonic free-jet conditions. Rotational analyses of high-resolution spectra have shown that the ground state of ZrC is a ³Σ state, with r₀=1.8066 Å and an unexpectedly small spin-spin parameter, λ=0.5139 cm⁻¹. The spectra are dense because of the five naturally occurring isotopes of Zr. Four of these, with mass numbers 90, 92, 94, and 96, have I=0, but the fifth, ⁹¹Zr, present in 11.22% abundance, has I=5/2. Lines of ⁹¹ZrC can be assigned in some of the strongest bands, and are found to display sizeable hyperfine splittings, with widths of up to 0.2 cm⁻¹. Analysis shows that the largest hyperfine effects are in the ground state, where b=−0.03133±0.00015 cm⁻¹ and c=−0.00123±0.00037 cm⁻¹ (3σ error limits). The large Fermi contact parameter, b, indicates that an unpaired Zr 5sσ electron is present, which, taken together with the small value of λ, means that the ground state must be a ³Σ⁺ state, from the electron configuration (Zr 5sσ)¹ (C 2pσ)¹. Internal hyperfine perturbations occur between the F₁ and F₃ electron spin components of the ground state in the range N=2-4, producing extra lines in some of the branches; the perturbations are of the type ΔN=0, ΔJ=±2, and are a second-order effect arising because the F₁ (J=N+1) and F₃ (J=N−1) spin components both interact with the F₂ (J=N) component through ΔN=0, ΔJ=±1 matrix elements of the Fermi contact operator. Second-order perturbations of this type can only occur in states that are very close to case (b) coupling.     

Structure and energy level of native defects in as-grown and electron-irradiated zinc germanium diphosphide studied by EPR and photo-EPR

The properties of defects in as-grown p-type zinc germanium disphosphide (ZnGeP₂) and the influence of electron irradiation and annealing on the defect behavior were studied by means of electron paramagnetic resonance (EPR) and photo-EPR. Besides the well-known three native defects (V_Zn, V_P, Ge_Zn), an S=1/2 EPR spectrum with an isotropic g=2.0123 and resolved hyperfine splitting from four equivalent I=1/2 neighbors is observed in electron-irradiated ZnGeP₂. This spectrum is tentatively assigned to the isolated Ge vacancy. Photo-EPR and annealing treatments show that the high-energy electron irradiation-induced changes in the EPR intensities of the zinc and phosphorus vacancies are caused by the Fermi level shift towards the conduction band. Annealing of the electron-irradiated samples induces a shift of the Fermi level back to its original position, accompanied by an increase of the EPR signal associated with the V_Zn⁻ and a proportional increase of the EPR signal assigned to the V_P⁰ under illumination (λ<1 eV) as well as generation of a new defect. The results indicate that the EPR spectra originally assigned to the isolated V_Zn⁻ and V_P⁰ are in fact associated defects and the new defect is probably the isolated phosphorus vacancy V_Pi.     

XPS, electric and photoluminescence-based analysis of the GaAs (1 0 0) nitridation

In this paper, nitridation process of GaAs (1 0 0) substrates was studied in-situ using X-ray photoelectron spectroscopy (XPS) and ex-situ by means of electrical method I-V and photoluminescence surface state spectroscopy (PLS³) in order to determine chemical, electrical and electronic properties of the elaborated GaN/GaAs interfaces.The elaborated structures were characterised by I-V analysis. The saturation current I_S, the ideality factor n, the barrier height Φ_Bn and the serial resistance R_S are determined.The elaborated GaN/GaAs structures are also exhibited a high PL intensity at room temperature. From the computer-aided analysis of the power-dependent PL efficiency measurements (PLS³ technique), the value of the interface state density N_SS(E) close to the mid-gap was estimated to be in the range of 2-4 × 10¹¹ eV⁻¹ cm⁻², indicating a good electronic quality of the obtained interfaces.Correlation among chemical, electronic and electrical properties of the GaN/GaAs interface was discussed.     

Measurement of the cation partitionings in FexV3−xS4 (x = 1.0 and 2.0) by powder neutron diffraction

Full profile analyses of powder neutron diffraction data have provided direct measures of the cation partitionings in the ternary sulfides Fe_xV_3−xS₄, x = 1.0 and 2.0. In Fe₂VS₄, the cation sites of type I in the metal-deficient layers are completely populated by iron atoms, giving a structural formula Fe^IFe^IIV^IIS₄. In FeV₂S₄, in contrast to earlier results, the partitioning of the iron atoms is found to be incomplete, the corresponding structural formula being Fe_0.72^IV_0.28^IFe_0.25^IIV_1.75^IIS₄. In both materials, the diffraction data suggest that the distributions of iron and vanadium atoms in the metal-rich layers are non-random. The present structural results are considered in relation to those from earlier experiments on this system.     

Effective lagrangian of mesons and baryons in the strong-coupling expansion of lattice QCD

U(N) and SU(N) lattice QCD are considered. By using a method of the strong-coupling expansion, the effective lagrangian of hadrons is calculated up to the first order in 1/(g²N). For the Susskind lattice fermions, it is shown that chiral symmetry is spontaneously broken and as a result there appears the Nambu-Goldstone boson (pion). The fermion condensation 〈$\text{ψ}\text{ψ}$t>, the masses of hadrons and the pion decay constant are calculated and compared with the results of Monte Carlo (MC) simulations. In the strong-coupling region, our result of the order parameter 〈$\text{ψ}\text{ψ}$〉 coincides very well with that calculated by MC simulations.