双激子和浸润层泄漏以及俄歇俘获对量子点Rabi振荡衰减的影响

研究了脉冲激光激发下半导体量子点激子Rabi振荡中多能级过程引起的退相干特性.运用多能级粒子数运动方程组，分别计算和分析了三种多能级过程(双激子、浸润层泄漏以及俄歇俘获过程)对量子点中Rabi振荡衰减的影响.分析表明，双激子的影响在激发脉冲的脉宽较长时(>5ps)可以忽略；浸润层的泄漏虽然使得激子基态上粒子数振荡的振幅随着激发场的增强而减小，但是同时也导致了振荡平均值的减小；分析和讨论了两种俄歇俘获方式对激子振荡和复合发光的影响. 关键词： Rabi振荡 半导体量子点 退相干 俄歇俘获     

量子点腔非谐振耦合系统纯退相干的特性及应用

采用非相干泵浦、受激辐射和纯退相干的量子主方程研究了量子点腔耦合系统,得出腔与量子点发射光谱解析解.理论分析显示,在非谐振耦合系统中纯退相干能使腔发射谱产生明显的移位效应,从而可以解释"非谐振耦合腔有效发射"效应.为了进一步研究纯退相干在量子点腔耦合系统上的应用,引入了系统有效耦合率和单光子源效率,并通过比较有效耦合率...     

量子点腔非谐振耦合系统纯退相干的特性及应用

采用非相干泵浦、受激辐射和纯退相干的量子主方程研究了量子点腔耦合系统,得出腔与量子点发射光谱解析解.理论分析显示,在非谐振耦合系统中纯退相干能使腔发射谱产生明显的移位效应,从而可以解释“非谐振耦合腔有效发射”效应.为了进一步研究纯退相干在量子点腔耦合系统上的应用,引入了系统有效耦合率和单光子源效率,并通过比较有效耦合率与腔耗散定义出好腔与坏腔机制.选取两组依据实验数据作为参量,在共振与失谐时研究了纯退相干对系统有效耦合率和单光子源效率的影响.结果表明:纯退相干可提高失谐系统有效耦合率与单光子源效率,从而可能使坏腔转变为好腔|两组参量中有较大耦合效率一组在一定范围内满足好腔机制,其单光子源效率明显优于另一组.在非谐振耦合系统比较了好腔机制与坏腔机制的激光,好腔机制是实现单量子点激光的必要条件|由于非谐振耦合系统Fano因子无最大值出现,从而该系统可能无激光阈值.     

混沌微扰导致的量子退相干

研究了无限深势阱内两个粒子的耦合导致的量子退相干和量子行为趋近于经典混沌运动的过程．当一个粒子的质量减小时,它对另外一个粒子经典混沌扩散的影响逐渐减小．强混沌机理使得轻粒子的作用类似于噪声,从而有效得抑制另外一个粒子的量子相干性．轻粒子的退相干效应随着有效普朗克常数的减小逐渐增强．在这个过程中,另外一个粒子的量子扩散从动力学局域化行为逐渐过渡到经典极限．当有效普朗克常数足够小时。它的量子扩散与经典混沌扩散相符合．该粒子的线性墒随时间演化迅速趋近于饱和值,并且饱和值随着有效普朗克常数减小以指数函数形式从零趋近于l.     

半导体量子点中极化子的跃迁能量

研究了半导体量子点中极化子的激发态性质。采用Huybrechts线性组合算符和幺正变换方法,计算了量子点中极化子的振动频率、基态能量、第一激发态能量、由第一激发态向基态的跃迁能量和跃迁频率。分别讨论了电子-LO声子在强弱两种耦合情况下极化子的跃迁能量和跃迁频率。数值计算结果表明,跃迁能量ΔE和跃迁频率ω均随量子点有效受限长度l₀的增加而减少,且随电子-声子耦合强度α的增加而减少。     

微型光学偶极阱中单原子相干操控Rabi振荡的实现及其应用

文章综述了Rabi振荡的基本原理以及微型光学偶极阱中单原子相干操控Rabi振荡的研究进展,同时介绍了其在单光子源、量子寄存器、量子计算等方面的应用,并简要介绍了作者所在小组在微型光学偶极阱中单原子操控方面的实验进展.     

磁场引起的近藤单态退相干机制

磁场作为一个环境能够诱导近藤单态的退相干。我们采用格林函数方法,计算磁场下量子点耦合Aharonov-Bohm环系统的退相干特性,数值结果显示磁场引起的近藤单态的退相干是一个突然的过程。     

纯消相干对量子点-微腔激射性质的影响

应用量子主方程理论研究量子点-微腔耦合系统的激射性质.分别探索了不同类型的微腔耦合系统("好的系统"、"中等系统")在外加泵浦场的作用下表现出的激射现象.分析比较了失谐大小及环境纯消相干对这两种微腔耦合系统的内部特性(光场分布、腔内光子数等)产生的影响.数值仿真表明:对于"好的系统",在失谐量不大的情况下,引入适当的纯消相干有利于提高耦合系统的激射性能;对于"中等系统",由于失谐条件下光子在腔内集聚困难,因而很难达到激射,但是通过引入适量的纯消相干可以对腔内光场分布和光子数产生剧烈调制作用.该结果对于研究单量子点激光器,以及探索光与物质相互作用等方面具有指导作用.     

计及激子-双激子相干下半导体单量子点中的空间光孤子对

考虑激子-双激子的相干效应, 解析地研究了半导体单量子点中探测光和信号光的吸收特性和非线性传播特性.结果发现, 在线性条件下, 单量子点中出现电磁感应透明现象; 进一步分析可得, 电磁感应透明所呈现的是单窗口或双窗口或光学增益均可通过调节控制光强加以控制.在非线性条件下, 弱信号光诱导弱探测光产生两个分量, 这两个分量在系统中所激发的自克尔和交叉克尔 非线性效应与系统的衍射效应相平衡从而形成稳定的亮-亮, 亮-暗, 暗-暗等空间光孤子对. 关键词： 半导体量子点 电磁感应透明 空间光孤子对     

库仑势对抛物量子点量子比特消相干的影响

采用Pekar类型的变分方法,在电子与体纵光学声子强耦合的条件下,计算得出了抛物量子点中电子的基态能量和第一激发态能量及其相应的本征波函数.量子点中这样的二能级体系可以作为一个量子比特.由于声子的自发辐射,造成量子比特的消相干,讨论了消相干时间与库仑结合参数,耦合强度,受限长度,色散系数的变化关系. 关键词： 量子点 量子比特 量子信息 消相干     

Wetting Layer Effect on Optical Gain of Strained CdTe/ZnTe Pyramidal Quantum Dots

The optical properties of strained CdTe/ZnTe pyramidal quantum dots （QDs） are investigated as a function of the wetting layer thickness using an eight-band strain-dependent k.p Hamiltonian. The ground-state subband energies in the conduction and valence bands rapidly decreases with the increasing wetting layer thickness. This is attributed to the reduction of subband energies in both the conduction and the valence bands due to the strain effect. The optical gain peak on the shorter wavelength side decreases with the increasing wetting layer thickness. On the other hand, the gain peak on the longer wavelength side is nearly independent of the wetting layer thickness. The decrease in the gain peak on the shorter wavelength side is related to the decrease in matrix elements corresponding to transitions between higher subbands such as （3, 4） and （4, 3）.     

Extremely Low Density InAs Quantum Dots with No Wetting Layer

Extremely low density InAs quantum dots （QDs） are grown by molecular beam droplet epitaxy. The gallium deposition amount is optimized to saturate exactly the excess arsenic atoms present on the GaAs substrate surface during growth, and low density InAs/GaAs QDs （4× 10^6 cm^-2） are formed by depositing 0.65 monolayers （MLs） of indium. This is much less than the critical deposition thickness （1.7 ML）, which is necessary to form InAs/GaAs QDs with the conventional Stranski-Krastanov growth mode. The narrow photoluminescence linewidth of about 24 meV is insensitive to cryostat temperatures from IO K to 250K. All measurements indicate that there is no wetting layer connecting the QDs.     

On Exciton Decoherence in Quantum Dots

The effects resulting due to dressing of an exciton with phonons are analyzed as the source of unavoidable decoherence of orbital degrees of freedom in quantum dots. The dressing with longitudinal optical phonons results in energetic shift of order of a few meV even of the ground state of exciton in a state-of-the-art InAs/GaAs dot and the mediating role of longitudinal acoustical phonons is essential in this process. The characteristic time needed for dressing of the exciton with optical phonons is of a picosecond order. That time can be regarded as the lower limit for decoherence for optically driven quantum gates employing self-assembled quantum dot structures.     

Quantum-Confined Stark Effect in Ensemble of Colloidal Semiconductor Quantum Dots

The presence of a strong, changing, randomly-oriented, local electric field, which is induced by the photo-ionization that occurs universally in colloidal semiconductor quantum dots （QDs）, makes it difficult to observe the quantum-confined Stark effect in ensemble of colloidal QDs. We propose a way to inhibit such a random electric field, and a clear quantum-confined Stark shift is observed directly in close-packed colloidal QDs. Besides the applications in optical switches and modulators, our experimental results indicate how the oscillator strengths of the optical transitions axe changed under external electric fields.     

High-Frequency EPR and ENDOR Spectroscopy on Semiconductor Quantum Dots

It is shown that high-frequency electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) spectroscopy are excellent tools for the investigation of the electronic properties of semiconductor quantum dots (QDs). The great attractions of these techniques are that, in contrast to optical methods, they allow the identification of the dopants and provide information about the spatial distribution of the electronic wave function. This latter aspect is particularly attractive because it allows for a quantitative measurement of the effect of confinement on the shape and properties of the wave function. In this contribution EPR and ENDOR results are presented on doped ZnO QDs. Shallow donors (SDs), related to interstitial Li and Na and substitutional Al atoms, have been identified in this material by pulsed high-frequency EPR and ENDOR spectroscopy. The shallow character of the wave function of the donors is evidenced by the multitude of ENDOR transitions of the ⁶⁷Zn nuclear spins and by the hyperfine interaction of the ⁷Li, ²³Na and ²⁷Al nuclear spins that are much smaller than for atomic lithium, sodium and aluminium. The EPR signal of an exchange-coupled pair consisting of a shallow donor and a deep Na-related acceptor has been identified in ZnO nanocrystals with radii smaller than 1.5 nm. From ENDOR experiments it is concluded that the deep Na-related acceptor is located at the interface of the ZnO core and the Zn(OH)₂ capping layer, while the shallow donor is in the ZnO core. The spatial distribution of the electronic wave function of a shallow donor in ZnO semiconductor QDs has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine interactions as monitored by ENDOR spectroscopy quantitatively reveal the transition from semiconductor to molecular properties upon reduction of the size of the nanoparticles. In addition, the effect of confinement on the g-factor of SDs in ZnO as well as in CdS QDs is observed. Finally, it is shown that an almost complete dynamic nuclear polarization (DNP) of the ⁶⁷Zn nuclear spins in the core of ZnO QDs and of the ¹H nuclear spins in the Zn(OH)₂ capping layer can be obtained. This DNP is achieved by saturating the EPR transition of SDs present in the QDs with resonant high-frequency microwaves at low temperatures. This nuclear polarization manifests itself as a hole and an antihole in the EPR absorption line of the SD in the QDs and a shift of the hole (antihole). The enhancement of the nuclear polarization opens the possibility to study semiconductor nanostructures with nuclear magnetic resonance techniques.     

腔场QED与量子点系统激子纠缠态的制备及消纠缠研究

利用量子点与单模腔场共振相互作用模型提出了激子Bell类和W类纠缠态的制备方案.借助于超算符方法和态的保真度考察了所制备的激子纠缠态的消相干特性,结果表明:激子Bell类和W态的纠缠特性非常脆弱,在极短的时间里演变为消纠缠态.基于腔场与两量子点共振相互作用模型设计了一个量子交换门.     

基于半导体量子点的片上手性纳米光子器件

手性量子光学在量子信息技术研究领域中受到了广泛的关注,其主要研究光在微纳结构中自旋依赖的手性耦合及传输行为。利用手性光与物质的相互作用可以增强光子与量子发射器的耦合,赋予纳米光子器件新的功能和应用,从而推动手性量子光学在量子信息领域中的大规模应用。主要对基于半导体量子点的片上手性纳米光子器件进行了综述,重点讨论了半导体量子点的光学性质和手性光与物质相互作用的物理机制,在此基础上对近年来应用手性耦合原理实现的多功能手性光子器件进行了总结,并对手性量子光学的未来应用场景进行了展望。     

GaN半导体中InN量子点的结构性质

采用第一性原理模拟计算纤锌矿结构GaN半导体中InN量子点的结构性质。建立64和128个原子的超原胞量子点模型,进行结构优化以获得稳定的吻合实际的系统,并模拟分析电子结构。从态密度空间分布图看到不同轴向的量子势阱形状各异、深度不一,说明量子点的限域效应存在着各向异性的特点。c轴极化方向引起量子点结构带边的弯曲形状与传统的量子阱结构不同,使得电子空穴没有发生空间分离,有利于电子空穴的跃迁几率的提高。