Ab initio calculation of the deformation potentials for intervalley phonons in silicon

The fully self-consistent first-principles calculations of electron scattering from short-wavelength phonons between lower valleys in the conduction band of a silicon crystal are carried out for the first time. The calculations of the lattice constant, the electron and phonon spectra, and the scattering probabilities are performed in the framework of a unified approach within the electron density functional theory. The theory contains no phenomenological assumptions regarding the relative position of minima in the conduction band, effective masses of carriers, interatomic forces, and scattering probabilities. The electron-phonon coupling constants (deformation potentials) for symmetry-allowed f and g transitions are calculated. The calculated constants lie in the range of values measured in different experiments involving intervalley transitions in silicon.     

Vibrational modes and infrared absorption of interstitial oxygen in silicon

A quasi-linear Si₂O molecule model (QLMM) is suggested from an analysis of the configuration and the interactions of an isolated oxygen atom with its neighbor silicon atoms. The vibrational modes are assigned and the infrared absorption spectra are calculated in detail with the model. The theoretical results are in reasonably good agreement with reported experimental values. This agreement shows that for the analysis of the vibrational modes of the interstitial oxygen atom in silicon crystals it is not necessary to consider the coupling of the molecule with the rest of the lattice. The interaction of the oxygen atom with its six second-nearest silicon atoms only causes the level separation of the ₂ mode and the formation of the fine structure.     

GaN中与C和O有关的杂质能级第一性原理计算

用局域密度泛函线性丸盒轨道大型超原胞方法(32个原子),对纯纤锌矿结构的GaN用调节计算参数(如原子球与“空球”的占空比)在自洽条件下使Eg的计算值(323eV)接近实验值(35eV).然后以原子替代方式自洽计算杂质能级在Eg中的相对位置.模拟计算了六角结构GaN中自然缺陷以及与C和O有关的杂质能级位置,包括其复合物.计算结果表明,单个缺陷如镓空位VGa、氮空位VN、氧代替氮ON、炭代替氮CN、炭代替镓CGa等与已有的计算结果基本一致.计算结果表明杂质复合物会导致单个杂质能级位置的相对变化.计算了CNON,CGaCN,CNOV和CGaVGa,其中CNON分别具有深受主与浅施主的特征,是导致GaN黄光的一种可能的结构. 关键词： GaN 杂质能级 电子结构     

Ab initio calculation of the Hoyle state

The Hoyle state plays a crucial role in the helium burning of stars heavier than our Sun and in the production of carbon and other elements necessary for life. This excited state of the carbon-12 nucleus was postulated by Hoyle as a necessary ingredient for the fusion of three alpha particles to produce carbon at stellar temperatures. Although the Hoyle state was seen experimentally more than a half century ago nuclear theorists have not yet uncovered the nature of this state from first principles. In this Letter we report the first ab initio calculation of the low-lying states of carbon-12 using supercomputer lattice simulations and a theoretical framework known as effective field theory. In addition to the ground state and excited spin-2 state, we find a resonance at -85(3) MeV with all of the properties of the Hoyle state and in agreement with the experimentally observed energy.     

Ab initio calculation of the superconducting transition temperature

The superconducting transition temperature is calculated for a series of representative metals from a selfconsistent LMTO-bandstructure calculation. We carefully avoid any uncontrolled approximations apart from the use of a local exchange-correlation potential and the rigid-ion approximation for the electron-phonon interaction, Our results for V, Nb, Ta, Mo, W, Pd, Pt, Pb clearly indicate that these popular approximations are incapable of reproducing the observed transition temperatures.     

Ab initio calculation of phonons in semiconductor surfaces

The plane-wave pseudopotential approach to the density-functional theory together with the slab supercell method has been applied to determine the structural and dynamical properties of semiconductor surfaces. We compare the atomic equilibrium geometry and the phonon dispersion curves for the (110) surfaces of several III-V-compounds and investigate their hydrogen covered surfaces. Moreover, we discuss the systems Si(111):H-(1×1) and Si(111):Ga-(√3×√3)R30°. Our results are in good agreement with all available experimental data.     

Ab initio calculation of transition dipole moments for transitions between valence states in oxygen molecules

Results of ab initio calculations of potential-energy curves for 20 singlet and 20 triplet valence states of oxygen with configuration interaction taken into account in the 6-31G basis are presented. Transition dipole moments of triplet-triplet (1³Π_g ← B ³Σ _u ^? , 1³Π_g ← A ³Σ _u ⁺ , 1³Π_g ← A′ ³Δ_u, B ³Σ _u ^? ← X ³Σ _g ^? , 2³Π_u ← 1³Π _g, 2³Σ _g ^? ← B ³Σ _u ^? , 1³Π_u ← X ³Σ _g ^? , 2³Π_u ← X ³Σ _g ^? , 2³Π _g ← A′³Δ_u, 3³Π_g ← A′ ³Δ _u, 2³Δ_u ← 2³Π_g, 3³Π_g ← B ³Σ _u ^? , and 2³Π_g ← A ³Σ _u ⁺ ) and singlet-singlet (2¹Σ _g ⁺ ← 2¹Π_u, 2¹Π_u ← 1¹Π ^g, ¹Π_u ← 2¹Δ_g, 1¹Π_g ← c ¹Σ _u ^? , ¹Π_u ← b ¹Σ _g ⁺ , 1¹Δ _u ← a ¹Δ_g, 2¹Π_u ← a ¹Δ_g, 2¹Δ_g ← 1¹Δ_u, ¹Π _u ← a ¹Δ _g, 1¹Π_u ← b ¹Σ _g ⁺ , 2¹Π_g ← 1¹Π_u, 2¹Π _g ← c ¹Σ _u ^? , 1¹Δ _u ← 1¹Π _g, f′Σ _u ⁺ ← b ¹Σ _g ⁺ , 2¹Σ _g ⁺ ← f ′¹Σ _u ⁺ , 3¹Π_g ← 1¹Δ_u) radiative transitions are calculated as functions of internuclear separation. The possibility of observing these transitions under experimental conditions is discussed.     

Ab initio calculation of the dipole moment of cyanamide

The He(I) photoelectron spectra of the isoelectronic series Fe(CO)₂(NO)₂, Co(CO)₃NO and Ni(CO)₄ are reported and interpreted by means of ab initio SCF-MO calculations. For the nitrosyl complexes it is found that ionization potentials calculated assuming Koopmans' theorem are seriously in error due to the considerably greater orbital relaxation accompanying ionization from metal than from NO valence orbitals. When such allowance is made for orbital relaxation by performing restricted Hartree-Fock (RHF) calculations on the ionic states, the experimental spectra are accurately reproduced and the observed similarity of the spectra of all three molecules is explained.     

Ab initio identification of the nitrogen diffusion mechanism in silicon

In this Letter, we present ab initio results identifying a new diffusion path for the nitrogen pair complex in silicon, resulting in an effective diffusivity of 67exp((-2.38 eV/kT) cm2/s. This nudged elastic band result is compared with other nitrogen diffusion paths and mechanisms, and is determined to have unmatched agreement with experimental results. It is also shown that careful consideration of total energy corrections and use of a fully temperature-dependent diffusion prefactor have modest but important effects on the calculation of diffusivity for paired and for interstitial nitrogen.     

Ab initio calculation of double ionization of atoms

The Solov’ev-Vinitsky method was used to perform an ab initio calculation of the triple-differential cross section for the double single-photon photoionization of helium for the case of equal emitted-electron energies. A Gaussian width γ describing angular electron-electron correlations at the total electron energy E taking values in range between 0.1 and 100 eV was obtained for this cross section. The results agree with available experimental data, but they raise a doubt as to whether the well-known Wannier law γ ∝ E ^1/4 is applicable at experimentally accessible energies. The Gaussian width γ was investigated as a function of the total emitted-electron energy for targets that have a strongly asymmetric configuration of the initial state—specifically, a negative atomic-hydrogen ion H^? and heliumin the 1s2s ¹ S and 1s3s ¹ S excited states. It was found that this function, γ(E), had a maximum at low energies. It was also shown that, at low energies, the dependence of the double-differential cross section on the angle between the emitted-electron momenta for the targets indicated above differed substantially from the Gaussian dependence, featuring maxima whose number was equal to the number of radial nodes in the initial state. This opens new possibilities for a qualitative analysis of the electron structure of targets.     

Ab initio study of palladium and silicon carbide

Ab initio methods have been used to investigate the properties of Pd as impurity in bulk SiC at five charged states within the framework of density functional theory using the local spin density approximation. It was found that Pd interstitials and substitutionals have similar energy to their intrinsic counterparts. In addition, Pd substitutes for a vacancy, di-vacancy, and tri-vacancy with similar energies. Pd diffuses through SiC via an interstitial mechanism employing the tetrahedral sites and Pd can substitute for Si and C at positive charged states. Removing electrons (p-type doping) from SiC lowers the formation and migration energies of Pd defects in SiC for most configurations.     

Ab initio pseudopotential calculation of phonon frequencies in lithium

A pseudopotential calculation of the phonon frequencies in lithium has been made using the a priori Goddard-pseudopotential properly modified to include the conduction-band—core exchange. The agreement with the experimental data is satisfactory.     

Ab initio calculation of the intrinsic spin Hall effect in semiconductors

Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs, and AlAs is large [approximately 100(planck/e)(Omega cm)(-1)], showing the possibility of a spin Hall effect beyond the four-band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors. Furthermore, it is found that the spin Hall effect can be strongly manipulated by strains, and that the ac spin Hall conductivity is large in pure as well as doped semiconductors.     

Ab initio calculation of intrinsic point defects in CuInSe2

Preliminary ab initio calculation of different point defects energy and electronic density of states have been performed on the prototype chalcopyrite semiconductor CuInSe₂. The simulation method used is based on the density functional theory within the framework of pseudo-potentials and plane waves basis. The isolated neutral defects considered are: V_Cu, V_In, V_Se, Cu_i, In_i, In_Cu, Cu_In and the complex defects are 2Cu_i+Cu_In, In_Cu+Cu_In and 2V_Cu+In_Cu, some of which being computed for the first time by advanced ab initio techniques. In agreement with previous results, we show that some point defects (such as V_Cu) and pair defects (2V_Cu+In_Cu) have very low formation energies. Some energies of formation were found significantly lower than previous estimations. The comparison of the formation energies with the exchange correlation (LDA or GGA) is discussed. The perturbation induced by the presence of some of these ideal defects on the density of states is also presented.     

Interaction of interstitial nitrogen atoms in Nb: Ab initio calculations

Ab initio calculations of pair nitrogen interstitials interaction in the first 12 coordination shells of a Nb crystal lattice are performed using the Vienna ab initio simulation package (VASP), and chemical and strain-induced contributions are analyzed. It is shown that rapidly decreasing chemical repulsion prevails in the nearest coordination shells, whereas strain-induced (elastic) interaction makes the main contribution in more distant shells.